2014 - EOS/ESD Association, Inc.

IEW
International Electrostatic
Discharge Workshop
The International ESD Workshop will host its 8th edition in 2014
and will be held for the first time in the breathtaking setting of
the French Alps. This great event is characterized by a friendly,
interactive atmosphere and provides a wonderful environment
for envisioning, developing, and sharing ESD design and test
technology for present and future semiconductor applications.
Special focus topics for the 2014 IEW include “Automotive EOS/
ESD” and “Foundry Support and CAD for ESD”, but a number
of other key topics (such as technology innovation in the ESD
field, System-Level ESD events, EOS, ESD test methods) will
also be featured and discussed.
Experience the unique interactive
program of the IEW Workshop.
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•
•
•
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Listen to experts
Share your ideas
Give your inputs
Ask questions
Network with high-level ESD experts
from industry
Learn in an informal, interactive, and
constructive atmosphere.
A highly rewarding experience!
May 19-22, 2014
Grand Hôtel de Paris, Villard de Lans, France
EOS/ESD Association Inc. 7900 Turin Rd., Bldg. 3 Rome, NY 13440-2069, USA
PH +1-315-339-6937 • Fax +1-315-339-6793 Email: info@esda.org • www.esda.org
Management Committee:
Management Committee Chair:
Alan Righter, Analog Devices
Technical Program Chair:
Lorenzo Cerati, STMicroelectronics
Program, Registration,
and Publications Chair:
Pascal Salome, Serma Technologies
Seminar Chair:
Markus Mergens, QPX
Invited Speaker Chair:
Dimitri Linten, imec
Discussion Groups Chair:
Matthew Hogan, Mentor Graphics
Keynote Speaker Chair:
Harald Gossner, Intel Mobile Communications
Special Interest Groups Chair:
Wolfgang Stadler, Intel Mobile Communications
Audio/Visual Chairs:
Alexandre Dray, STMicroelectronics
Michael Mayerhofer, Infineon Technologies
Publicity Chair:
Bart Keppens, Sofics
US:
James W. Miller, Freescale Semiconductor
Europe:
Harald Gossner, Intel Mobile Communications
Dimitri Linten, imec
Philippe Galy, STMicroelectronics
Asia:
Joshua Yoo, Core Insight
US University:
Juin J. Liou, University of Central Florida
Europe University:
Marise Bafleur, LAAS
Asia University:
Steve Voldman, Dr. Steven H. Voldman, LLC
Industry Council Advisor:
Charvaka Duvvury
ESDA IEW Business Unit Manager:
Alan Righter, Analog Devices
ESDA HQ Director of Operations:
Lisa Pimpinella
ESDA Education Business Unit Manager:
Ginger Hansel, Dangelmayer Associates
Technical Program Committee
Gianluca Boselli, Texas Instruments
Victor Cao, GlobalFoundries
Yiqun Cao, Infineon Technologies
Michael Chaine, Micron Technology
Leonardo Di Biccari, STMicroelectronics
James Di Sarro, IBM
Kai Esmark, Infineon Technologies
Evan Grund, Grund Technical Solutions
Michael Khazhinsky, Silicon Labs
Hans Kunz, Texas Instruments
Timothy Maloney, Intel
Mototsugu Okushima, Renesas
Dionyz Pogany, University Vienna
Akram Salman, Texas Instruments
Theo Smedes, NXP Semiconductors
Howard Tang, UMC
David Tremouilles, LAAS-CNRS
Johan Van der Borght, Sofics
Vladislav Vashchenko, Maxim Integrated Products
Heinrich Wolf, Fraunhofer IZM
Eugene Worley, Qualcomm
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Keynote
This year’s IEW will present a keynote speaker from one of the world’s leading institutions for particle physics, the
European Organization for Nuclear Research (CERN), located two hours north of Grenoble at the border between
France and Switzerland. The recent discovery of the Higgs-Boson at CERN’s Large Hadron Collider (LHC) resulted in
the 2013 Nobel Prize in Physics for the theoretical physicists predicting this particle which can explain the mass of all
matter. However, this would not have been possible without the extensive use of silicon devices in the huge detectors.
They analyze the particle reaction making use of the particular interaction of high energy particles with semiconductors. It is our pleasure to welcome a speaker from the detector experiment ‘Compact Muon Solenoid’ (CMS) giving
us insight into this exciting field.
Keynote
Compact Muon Solenoid (CMS)
Dr Marcello Mannelli, Senior Research Physicist at CERN-PH
Department
Abstract: The CMS apparatus at the LHC collider (CERN,
Geneva, Switzerland) investigates particle physics phenomena at the high-energy frontier. The discovery of a
Higgs-Boson in 2012 is one of the highlights in a wealth of
results obtained from precision measurements of known
particles and searches for the yet unknown. CMS uses
200 m² of monocrystalline silicon diode detectors segmented in strips and 66 million channels of silicon diode
detectors readout in small pixels to measure precisely the
tracks of about one thousand particles originating in proton-proton collisions every 25 nanoseconds. An overview
of the experiment’s physics goals and of these detectors
will be given.
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Presenter Biography: Dr Marcello Mannelli received a
PhD in Elementary Particle Physics from Yale University
in 1998. In the summer of that year he came to CERN to
work on the OPAL experiment at LEP. Over the next decade he contributed to the searches for the Higgs Boson,
and played a leading role in the precision Electro-Weak
physics program at LEP. Since 1996 his focus has been
on the CMS experiment at the LHC. Here he was a leading proponent of the innovative all-silicon tracker for the
CMS experiment, and then went on to hold a number of
project responsibilities for the construction and commissioning of the CMS Tracker. Since the start of LHC operation, he has participated in the analysis effort leading to
the discovery of the Higgs Boson in the summer of 2012,
and its subsequent characterization. At the same time, he
is also involved in the preparation of the program of upgrades to the CMS experiment, aimed at making effective
use of the substantial increase in the capabilities of the
LHC accelerator, foreseen for the early 2020’s.
Invited Talks
Invited Talk 1
Invited Talk 2
Abstract: In 3D IC technology thinned chips are stacked and
interconnected using through Si vias (TSVs) and micro-bumps.
This technology brings new reliability challenges. The failure
mechanisms are not mainly caused by electrical stress, as was
the case for conventional ICs, but thermal, mechanical and
thermo-mechanical issues play an increasing role. This not only
demands for a screening of processing and material choices,
but also for new functional, reliability and failure analysis test
methods and methodologies. In this talk, an overview of reliability challenges for the 3D IC via-first technology will be given.
This includes Cu-TSV related problems such as barrier and
liner integrity, electromigration and Cu pumping, TSV impact on
back-end- and front-end-of-line reliability and devices, keep-outzones, ESD, chip thinning and stacking related issues, microbump reliability, and chip-package interaction (CPI).
Abstract: Most of the IC design houses do not have their
own Fab to produce the integrated circuits and so they have
to choose a foundry partner who provides technology data as
well as libraries, simulation & verification files and documentation. The amount of offered material varies depending on foundry
and technology, in some cases the information is limited, especially for the new technologies. Not knowing each detail of the
technology requires additional support by the foundry experts in
particular when doing HV designs. This support is a key factor
for a successful project, and finally it is a win-win situation for
both customer and foundry once the product is on the road. To
provide a support flow from the very beginning of a project till
qualification is a must for analogue HV mixed mode circuits at
least for automotive products. This flow should include a review
of the system the IC is built in, an ESD/HV concept definition
including a pre selection of the IO cells, proposal of mandatory
documents the customer should use and simulation/verification
hints. Depending on the foundry services also backend support
as assembly, testing, ESD/LU testing and qualification is provided. Based on the type of project the required assistance might
differ. A research company will be in need of other support than
a design house developing a product for a particular solution.
3D IC Reliability Challenges: New Failure Mechanisms
Demanding for New Test Methods
Ingrid De Wolf, imec
Presenter Biography: Ingrid De Wolf (IEEE senior member)
received the MS degree in Physics and the PhD in Sciences,
Physics, both from the “Katholieke Universiteit Leuven”, Belgium.
From 1989 on she joined the Reliability group of imec in Belgium.
She worked in the field of reliability physics of semiconductor devices, with special attention for mechanical stress aspects and
failure analysis. From beginning 1999 on, she heads the group
REMO, where research is focused on reliability, e-test and modelling of 3D technology, BEOL, MEMS, and packaging, including
‘chip-package interaction’. She authored or co-authored in these
fields several book chapters and more than 320 publications.
She is part time professor at the Metals and Applied Materials
engineering department of the KU Leuven.
ESD / Latch-up / EOS Support Through Foundry Business
in HV Technologies
Wolfgang Reinprecht, Austria Microsystems
Presenter Biography: Wolfgang Reinprecht is Principal Engineer ESD/EOS at amsAG and responsible for development of
ESD protection circuits, libraries and rules in 0.35 and 0.18 µm
HV technologies. He supports design engineers to ensure ESD,
over voltage and Latch-up robust products. He finished his education in communication engineering and electronics in 1985 in
Graz. From 1986 to 1996 he joined AMS as Design & Layout engineer and was responsible for analogue IP block development.
1997 he founded Mikro-Elektronik Design Service GmbH and
led the development of IP-blocks, libraries, ESD protections and
check tools for various technologies. In 2006 he joined the ESD/
EMC group at amsAG (austriamicrosystems). Since 2010 he is
participating in standardization meetings and working groups related to ESD, EOS and Latch-up topics.
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Invited Talk 3
Invited Talk 4
Abstract: To have the chance to get the “big picture” I want to
talk about three important topics: OEM requirements, boardnet and impact to semiconductor. In the first step I want to
give an understanding what motivation OEMs have to do a
permanent change of their requirements. This will include (beside increase of functionality) the change within existing functions and topologies. Permanent reduction of powerlosses,
less weight and less size are three of the side effects. The
boardnet as connection between all electrical components
has an important role. Any change has impact to the body
control module (BCM) and the semiconductors as well. Relay
replacement and new voltage domains within the vehicle are
examples for this. From semiconductor point of view the main
challenges are high currents and transient voltages. Additional miniaturization leads to high power densities and improved
diagnosis capability. Additionally reliability has to increase.
Abstract: This presentation is focused on ESD challenges
for the Fully Depleted SOI (FDSOI) Ultra Thin Body and Box
(UTBB) advanced CMOS technology nodes. After an introduction on the FDSOI technology provided by ST, the ESD
protection strategy particularities in this technology will be discussed. Principally, performance of elementary devices will
be discussed for the hybrid bulk solution. Afterward, the ESD
strategy robustness will be elaborated.
Change of Electrical Requirements in Automotive
Application
Andreas Kucher, Infineon Technologies
Presenter Biography: Andreas Kucher finished his master
study in Telematics at Graz University of Technology in 1997.
During his more than 15 years of experience in R&D and Marketing Andreas has worked as an analogue designer, project
manager, concept and application engineer. Currently his position is Technical Lead for body applications in automotive.
He is Principal at Infineon Technologies. Outside Infineon he
likes to ride motorcycles and play hockey.
ESD Challenges for FDSOI UTBB Advanced CMOS
Technologies
Philippe Galy, STMicrolectronics
Presenter Biography: Philippe Galy is Senior Expert in micro & nano-electronics at STMicrolectronics R&D, Crolles
France since 2005. He proposed a full CDM protection strategy validated by silicon proof. Moreover, its main R&D topics
are on SCR, T2, BIMOS transistor, Beta-structure and other
innovative devices. Moreover, he proposes several new ESD
compact devices with associated trigger circuits for ESD network. He leads several groups in IP infrastructure team for
R&D focused from transistor level to the SOC level for robust
IP integration. He is serving in the TPC or as a reviewer for
many symposia and for TED/SSE. Prior to that, he was a professor at an engineer school for 10 years. He has authored
or co-authored several publications, books and patents. He
holds a Ph.D. and H.D.R. (academic research supervisor).
Monday Evening Talk
GRENOBLICIMES
Photography book by DiVertiCimes
On the borders of Chartreuse, Vercors and
Belledonne, the city of Grenoble stretches out
over several valleys, surrounded by mountains.
When leaving the city to climb the mountains
above, one is immediately moved by the contrast between the urban areas and the wild spaces, between the city’s
architecture and nature’s generosity.
On some winter days, unique local weather conditions
cause a vast sea of clouds to form over the metropolis and to shroud the foothills, filling every crack, every gap. Above the sea, the sun asserts itself, revealing a separate world of rare beauty – bathing the emerging mountain tops, the
pastures and the villages in its light. This book is an account of the passage to this other world, so close to Grenoble. More than an illustrated report, the DiVertiCimes collective offers a contemplative and artistic approach. They
play with light, wait for the ideal weather conditions and create original compositions to present the mountains, as
well as the city seen from the mountains, in a new way. This book is meant to prolong this adventure and to share
these unique moments with all those who are in love with Grenoble and its surroundings, forever or for a day.
Contrary to the solitary approach of most photographers, that of DiVertiCimes is a collective one: six mountaineering photographers or photographing mountaineers who take much pleasure in spending time together, in watching
the flight of a butterfly, in feeling a gentle wind, in sharing a good saucisson and some red wine. Six photographers
deeply moved by the passing of time and saddened by each minute of lost light. Six photographers who are very
playful sometimes, when they position a figure on a mountain top for instance or use umbrellas, as shepherds once
did. When back down in the valley, the adventure goes on. The photographs belong to the group and not to the individual any more – as part of some kind of spiritual phalanstery.
Seminars
Seminar Chair: Markus Mergens, QPX
The six seminars this year address important topics for the changing industry with respect to ESD protection design. The
focus on the first seminar day is on system-level ESD, automotive EMC/ESD as well as a comprehensive study on EOS
customer returns. The second day of seminars concentrates on GaN ESD concepts including LEDs, the newly proposed
ESDA/JEDEC CDM standard, and an overview on the ESD offering from TowerJazz.
Seminar 1
System Level On-Chip ESD Protection
Vladislav Vashchenko, Maxim Integrated Products
Abstract: A significant paradigm shift in systems and analog IC
design has been initiated by the new market demands over the
last decade. Integration of emerging technologies, increase in
data rate, rapid evolution of the portable and mobile devices,
lower power consumption and operating voltages, dramatic increase of electronic content in automotive products with 0ppm
failure rate target and substantial progress in medical applications have created the demand for on-chip protection against
system level ESD and surge stresses. This has impacted ESD
specification for analog ICs, has changed understanding of the
system standards and test methodologies, that now applied to
the component level, as well as has initiated an intensive R&D
for a broad range of aspects from new high current capable
ESD on-chip devices up to advanced Si TVS components with
extremely low parasitic capacitance and precise waveforms.
Thus, a new on-chip system level protection ESD design culture has emerged and is evolving further. It involves not only
a physical design of the high current capable on-chip devices,
but requires to take into account both high voltage and transient Latch-up phenomena, board and system blocks design
with off-chip components as well as understanding of the correlation factors for the devices, pulse types and test setups.
This trend is ramping up toward creation of a new system-IC
co-design approach. The seminar brings a structural physical
understanding of the major aspects involved in the modern system level on-chip ESD design. The presentation is organized
in five sections that combine (i) introductory material for major
principles and methodologies of the system level ESD design,
(ii) quintessence of ESD and surge test standards and methods both for on-chip and board level with TVS protection; (iii)
describes the essentials of the device and clamp level solutions
for the on-chip system level ESD protection, further extended
toward (iv) the remaining aspects of the IC design, Latch-up
and transient-induced Latch-up and finally concluded by (v)
outlining the chip-system co-design approach.
Presenter Biography: Dr. Vladislav Vashchenko is Director of
ESD group at Maxim Integrated over the last 3 years. His group
is responsible for major ESD development aspects across the
entire $2.5B revenue enterprise. During previous decade he was
leading the ESD group at National Semiconductor Corp. Until
year 2000 he was with reliability department of SRI “Pulsar”.
He received MS, Engineer-Physicist and “Ph.D. in Physics of
Semiconductors” from Moscow Institute of Physics and Technology (1990) followed by “Doctor of Science in Microelectronics”
degree (1997). He is author of 147 U.S. patents and over 100
papers in the field, co-author of books “Physical Limitation of
Semiconductor Devices” (2008), “ESD Design for Analog Circuits” (2010, www.analogesd.com) and “System Level On-Chip
ESD Protection” (in production).
Seminar 2
EMC/ESD Design and Characterization for Automotive Applications
Patrice Besse, Freescale Semiconductor
Abstract: In embedded systems, ESD is considered as an electromagnetic disturbance and it is part of a global electromagnetic compatibility (EMC) specification. EMC tests are mainly
performed in powered mode and functional performance of the
system is evaluated during and after the stress. In this case,
different levels of functionality are required including operating
modes, levels of stress and functions. Integration of system functions into IC has brought ESD / EMC system level requirements
to the IC level, including functionality performances. Global pins
of ICs, directly tied to connectors, are particularly exposed during
system level stress. This seminar will discuss the common and
specific ESD/EMC system requirements we need to take into
account at the IC level. During this seminar, debug and characterization methods to evaluate functional performances of ICs
during ESD/EMC system level stress will be detailed.
Presenter Biography: Dr Patrice Besse received the Master
in electronics in 1999 and then he completed his post master
of Electromagnetic Compatibility at Blaise Pascal University,
France in 2000. In January 2004, he received the Ph.D. degree in
Electronics at the University of Paul Sabatier, Toulouse, France.
In 2004, he joined the Analog and Sensor design division of
Freescale where he is in charge of ESD/EMI protection strategy
for Automotive and industrial applications. Patrice focuses on
ESD protection and design optimization to pass ESD/EMC
automotive standards at both IC and system level. He is author
or co-author of 22 patents and 25 papers in the field of ESD,
EMC and reliability. He received the best paper award at EMC
compo 2011.
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Seminar 3
EOS - A Big Challenge in Today‘s Handling of Customer Rejects
Gerold Schrittesser, Infineon Technologies
Abstract: Handling of customer rejects has become more and more
challenging over the years in view of EOS. Unlike ten years ago
today most customers are asking for an EOS statement containing
a conclusive and comprehensive explanation of the failure scenario
that has finally resulted in an “EOS-like” damage and this EOS statement has to be discussed on much higher technical level. On the
other hand still today there is not much awareness on the customer
side that most “EOS-like” failure signatures do not allow a comprehensive conclusion to the origin of EOS and so the final root cause
cannot be evaluated without customer’s support. But in order to be
prepared to conduct a successful root cause analysis together with
customer the supplier is committed to build up an EOS knowledge
base for both internal and external needs. The seminar should deliver insight in today‘s handling of customer rejects in terms of EOS
and all the background that is necessary to be successful in that important topic – complemented with a few demonstrative examples.
Presenter Biography: In March 1985, Gerold Schrittesser received
the masters degree in electrical engineering (with the minor in electro-biomedical engineering and electronics) from the technical university in Graz, Austria. From 1985 to 1995 he was with Siemens AG
in Villach, Austria and worked on analog circuit development with
focus on ADC converter. In 1996 he joined the automotive power
design group as a design engineer and project manager for automotive power ICs. In 1999 he changed to Infineon for another 2 years
of circuit design and project management. In 2001 he took over the
responsibility for EOS knowledge platform in the automotive quality department with the key aspects EOS knowledge base buildup,
customer support and internal coordination in view of EOS topics.
Seminar 4
GaN Electronics and Optoelectronics from ESD Perspective
Dionyz Pogany, Vienna University of Technology
Abstract: Due to wide energy band gap, heterostructure tunability and
excellent transport properties, III-nitride semiconductors are promising for opto-electronic, RF, power switching and digital applications.
The seminar will start with reviewing the material aspects of III-nitrides
and basic designs of heterostructure field effect transistors (HFETs)
emphasizing the role of polarization-induced charges and surfaces in
channel doping. Potential ESD issues will be linked with the reliability
and breakdown behavior. Different parasitic effects like dynamic onresistance, reliability issues like reverse-bias degradation and breakdown mechanisms will be reviewed. For reducing the gate leakage
current and achieving normally-off operation of power GaN HFETs,
complex gate stacks including oxide insulators are introduced. Thus,
gate oxide reliability and threshold voltage instabilities will be discussed. Finally, ESD issues in GaN LEDs and some on-chip protection concepts in GaN-technologies will be reviewed.
Presenter Biography: Dionyz Pogany received his “Diploma Engineer” degree in Solid State Engineering from Slovak Technical University in Bratislava, Slovakia in 1987 and PhD degree in microelectronics
from INSA de Lyon, France in 1994. Since 1995 he has been with the
Institute for Solid State Electronics in Vienna University of Technology
where he leads a research team and has been an Associate Professor since 2003. He has been working on Si and III-V device reliability
physics, fluctuation phenomena in devices and nanostructures, defect and interface state characterization, GaN HFET electronics and
technology, ESD phenomena, self-heating effects, breakdown mechanisms and non-linear transport in ESD protection and Si and GaN
power devices, thermal analysis and development of optical methods
for device and failure analysis. He published over 100 journal papers
and numerous papers on conferences.
8
Seminar 5
The Proposed New ESDA/JEDEC Joint CDM Standard:
Considerations, Investigations and Improvements
Alan Righter, Analog Devices
Abstract: A draft of the new ESDA/JEDEC Joint CDM Standard
(JS-002) has been completed and is in review by the standards
bodies. This seminar describes the current field-induced CDM
testing measurement practice in the industry, differences in the
ESDA and JEDEC methods, and describes the issues and improvements from operational, theoretical, measurement, and
instrumentation work which have spurred the development of a
single CDM test platform for the new standard. Future investigations will also be described.
Presenter Biography: Alan Righter is the ESDA Co-chair
(along with JEDEC Co-chair Terry Welsher) of the ESDA/JEDEC
Standard Joint Working Group (JWG), responsible for development of the new Joint CDM standard. He has worked at Analog
Devices, Wilmington, MA since 1997 and currently is a Senior
Staff ESD Engineer responsible for ESD robustness of foundry
manufactured products and active in customer ESD support.
Alan earned a PhD from the University of New Mexico in 1996
and previously worked at Sandia National Laboratories in Albuquerque, NM from 1984-1997. He is currently active on the ESD
Association Board of Directors and is also the ESDA Secretary.
Seminar 6
Foundry ESD Offering
Efraim Aharoni, TowerJazz
Abstract: Integrated circuits foundries supply, beyond manufacturing and process technology, also a variety of support items,
particularly for the design of ESD protection. This seminar provides a comprehensive overview of the ESD ‘tool-box’ offered by
the foundry. It covers a wide spectrum of topics, from the effective ESD team in the organization and ESD/LU-related qualification methodology, to ESD guidelines to designers, required characterization, and verification tools. Special emphasis is put on
the Process Design Kit ESD elements like parameterized cells,
design rules, models, and protection schemes required for safe
design for ESD and short time to market. In addition, the implementation of Programmable Electronic Rule Check (PERC) for
ESD is described. The goal of the seminar is to introduce to designers the essential ESD design aids provided by the foundry.
Examples are given for miscellaneous technology flavors including Power Management, and different ESD protection concepts
based on either snapback devices or RC Rail Clamp.
Presenter Biography: Efraim Aharoni received the B.Sc.
degree in Physics in 1989 and the Ph.D degree in Physics in
1994 from the Technion, Israel Institute of Technology. His
research in the Technion was focused on High Temperature
Superconducting devices. In 1993 he joined TowerJazz. Efraim
worked in TowerJazz in a variety of fields, in both engineering and
management, in development as well as production. Amongst his
engineering roles: process, device, yield, director R&D CMOS,
and director of reliability. In the past few years, he has led the
ESD and Latch-up activities in the company. This involves the
development of new ESD devices and protection concepts,
creating libraries of ESD devices in PDK, PERC, and customer
support. He works closely with the TowerJazz Design Center,
device engineers, PDK group, customers, and production lines,
in TowerJazz sites worldwide. In addition, he is a member of the
Electrical Engineering department in the Kinneret College and
lectures on a variety of courses.
Discussion/Special Interest Groups
Discussion Group Chairman: Matthew Hogan, Mentor Graphics matthew_hogan@mentor.com
Special Interest Group Chairman: Wolfgang Stadler, Intel Mobile Communications wolfgang.stadler@intel.com
The evening discussion groups are an integral part of the workshop, with parallel sessions being offered each evening. Each group has
one or more moderators with extensive expertise on the topic, to help guide and inspire the discussion. The success of these sessions
depends on your active participation. We encourage you to bring along data, ideas and other items of interest to share. Contacting session moderators with questions, comments or suggestions prior to the event is also encouraged. As the workshop approaches, please
check the IEW web site for updates from the group moderators. Interested in forming a new Special Interest Groups (SIGs), focused
on one compelling topic of mutual interest? Please contact Wolfgang Stadler, wolfgang.stadler@intel.com for SIG creation details.
SIG A.1
DG A.3
The special interest group on ESD technology and EDA parameters addresses the standardization of ESD technology parameter
extraction and their representation to facilitate the communication between ESD designers at the product side and technologists especially at foundries. Having a comprehensive and comparable set of ESD parameters in place allows speeding up the
design process and ramp-up. This is a win-win for foundries, IP
vendors and IC design. A group of ESD specialists from foundry
technology and IP / product design have been working on an
ESDA White Paper covering this topic which has been published
in January 2014. The most relevant aspects of the paper will be
presented. Beyond this the idea will be debated whether to proceed with a similar paper describing the standard data useful for
interaction between IP vendor and IC design.
Latch-up qualification according to JEDEC JESD 78D is mandatory
for almost all products. However, today’s complex products often require an enormous effort to set-up a reliable Latch-up stress program,
and there is an increasing uncertainty how Latch-up qualification
should be conducted today to be compliant to the current standard
and in parallel consider the stress limits in the specific application.
Only to mention a few, coverage of possible Latch-up sensitive
states during the Latch-up stress is under discussion, as well as the
practical application of maximum stress voltages (MSV), and current
and voltage trigger limits in the test plan. Another question which
causes general confusion is how over voltage tolerance should be
accounted for in a Latch-up test. And, are the comparably slow Latchup pulses necessarily worst-case Latch-up trigger pulses or do we
need faster stress transients, at least for special pins? Come to our
Latch-up discussion group, bring your own experiences, problems,
and solutions and join our discussion on the most important Latch-up
topics! Let the experts of the Latch-up standardization bodies know
how future Latch-up standards should be defined to simplify Latchup testing without sacrificing real-world relevance.
ESD Technology and EDA Parameters
Moderator: Harald Gossner, Intel Mobile Communications
harald.gossner@intel.com
DG A.2
IEC Standards for EMC Testing
Moderator: Agha Jahanzeb, Texas Instruments Inc.
zeb@ti.com
In addition to the commonly used system level ESD immunity
test which is based on the IEC 61000-4-2 specification, there
are a number of other IEC 61000-4-x specifications that are
also needed as a part of conforming to standard system EMC
requirements in many applications and customer needs. These
include IEC 61000-4-3, 4-4, 4-5, and 4-6 corresponding respectively to the immunity tests for ‘radiated EM field’, ‘electrical fast transient (EFT)’, ‘surge’, and ‘conducted disturbance
from RF’. This discussion group will start by briefly introducing
these other system stress tests and draw parallels to the well
known ESD test. The audience will be engaged in the discussion by getting their experience and feedback. Finally, we will
discuss the degree of relevance to ESD engineers and future
involvement.
Latch-up Testing Today
Moderator: Wolfgang Stadler, Intel Mobile Communications
wolfgang.stadler@intel.com
DG B.1
Electrical Over Stress at IC and System Levels –
which Definition and Events are Related?
Moderators: Jean-Luc Lefebvre, Presto Engineering,
jean-luc.lefebvre@presto-eng.com; Christoph Thienel,
Bosch, christoph.thienel@de.bosch.com; Terry Welsher,
Dangelmayer Associates, terry@dangelmayer.com
For many years now, industry and standards associations
have focused on reducing IC and System degradation due to
ESD. Degradation classified as, or due to Electrical Overstress
(EOS) represents greater costs at all levels of the industry.
This discussion group explores a number of areas. First, how
to define EOS? Is it by using its literal meaning? If yes, what
does ‘Over’ means? What does Electrical Stress (ES) means?
Which type or category of ES event may belong to this EOS
definition? What are the root causes of these ES events? If not,
what is the best approach of such definition? Failure analysis
results? ES events? Root cause events? Are some root cause
events already known besides ESD events? Second, how far
is the EOS definition at the IC level from the Electro-Magnetic
Compatibility (EMC) definition at system level? Does EOS include conductive and field ES and root cause events? Third,
how to deal with EOS and EMC events at IC and System levels
to reduce failures and degradation?
9
DG B.2
Upcoming ESD Issues
Moderator: Charvaka Duvvury, cduvvury@gmail.com
Is component level IC protection against ESD becoming a serious challenge due to the seemingly never-ending advances
in scaling of silicon technologies? How much is the specific
impact from the upcoming technologies such as FinFETs, 3D
ICs, and GaN? Further, are the new developments for complex
high speed circuits along with the effects from system on chip
(SoC) applications making things worse? Add to that, the trend
for high pin count IC package development reducing achievable ESD levels as well as making standard test methods more
complex. Do they all need an increased attention from the ESD
designer? This discussion group will consider the impact of
these developments on the “ESD Design Window.” In addition
to the necessary component level ESD protection for safe handling at the IC production areas, is the system level ESD protection becoming even more critical because of the high speed
demands of USB3 and HDMI interfaces? During the discussion
group we will together attempt to bring into focus these technology and performance issues to understand the needed perspective for future research and innovation. The survival of the
next generation of electronics industry might very well depend
on this proactive attention!
DG B.3
Can IP (IO) Validation Guarantee Future IC Products’
ESD Immunity?
Moderators: Fabrice Blanc, ARM, fabrice.blanc@arm.com;
Peter de Jong, Synopsys, peter.deJong@synopsys.com
How often are you wondering about an IP ESD and Latch-up
(LU) immunity for its integration in your products? Or how often
have you been doubtful about the pre and post silicon validation of an IP, or unsure about the best practices for your own IP
ESD & LU validation?
What are the various ESD & LU pre silicon validation methods?
• Details required in check reports?
• Data to enable the checks by the IP user?
What are the various ESD & LU silicon test constraints and
requirements? What evidences and assumptions should be detailed in the qualification report?
• Based on worst case IP implementation? (Regarding metal
stacks, abutments, single/multi-rows,...)
• What are pass/fail criteria for sufficient failure detection
sensitivity?
IC product ESD & LU tests are well covered in test standards
but this is not fully applicable or sufficiently detailed for IP level
testing. So this is a forum to collect some common practices
and requirements and possibly see whether a dedicated standard practice document could help.
10
DG C.1
EOS in Automotive Applications
Moderator: Christoph Thienel, Bosch
christoph.thienel@de.bosch.com
In recent years, discussions about Electrical Overstress (EOS)
have gained renewed interest. Damage of semiconductors in
the automotive industry and in automotive applications is causing a lot of disturbance and pain. Car manufacturers are complaining to suppliers, but the real root causes are out of suppliers´ responsibility in the areas of automotive assembly lines
and outside garages. The damage is caused by violation of the
semiconductor´s specification. What are the real root causes
of EOS? What happened before violation of the specification
limit? What are the situations of semiconductor operation if the
electronics is destroyed? Which aspects of the whole car are
relevant for the damage? Which clusters of root causes do we
know? Are there differences between damaging situations in
the automotive and consumer industry? If so, what are reasons for it? What is the impact of the applications themselves?
Are there damages by applications? What is our imagination
and understanding of EOS in general? Is there sufficient experience with EOS in the automotive area? What is the role of
ESD? Is ESD also able to damage semiconductors with EOS?
Would more ESD protection help against EOS? Let us discuss these topics and spread our questions and experiences
amongst each other.
DG C.2
The Joint ESDA/JEDEC CDM Standard and Future
Roadmap of CDM
Moderator: Alan Righter, Analog Devices
Alan.Righter@analog.com
The in-process joint ESDA/JEDEC CDM Standard (JS-002) is
a big step in the harmonization toward a single unified Charged
Device Model (CDM) testing standard worldwide. It provides
a more accurate and focused description of what is required
in field-induced CDM metrology and calibration, as well as its
platform hardware limitations. How will the new standard affect
your testing of devices, including very small and very large devices? Improvements still need to be made to accurately measure the true CDM waveform at high frequencies. For example,
how will improvements such as better hardware implementation of a true 1 ohm discharge resistor, adding cable-based
impedance in the discharge path, or improving the field plate
dielectric material make a difference in measurements? Also,
developments in Contact Charged Device Model (CCDM) and
Capacitively Coupled TLP (CC-TLP) point toward more accurate high frequency waveform acquisition. What is their potential to complement or replace more widespread field based
CDM methods? Other standards bodies; the Automotive Electronics Council (AEC), Japan Electronics and Information Technology Industries Association (JEITA), and International Electrotechnical Commission (IEC) have their own CDM standards
or standard proposals. What are the outstanding roadblocks
to unification? Please join us in what promises to be a thought
provoking conversation.
Technical Sessions
Chairman: Lorenzo Cerati, STMicroelectronics
This year’s IEW technical program consists of three sessions, where peer-reviewed poster presentations are discussed together
with the authors and interested colleagues. The presentations are all preceded by a set of brief podium “teaser” introduction
given by each author in the session. These teasers encourage the workshop participants to visit all posters in the setup area and
discuss their ideas and key topics with the authors and each other.
A wide variety of ESD subjects will be covered: the first session mainly addresses System-Level ESD issues and characterization techniques; the second session features posters dealing with long-time EOS and system level ESD stresses, and the third
session features new trends in ESD testing along with the most advanced technological aspects of ESD protection development.
Technical Session A: System-Level ESD
A.1 System Efficient ESD Design (SEED) Including
2kΩ/330pF RC Gun Module
Jean-Philippe Laine, Patrice Besse, Alain Salles, Freescale
Semiconductor
SEED methodology implies 100ns TLP information for a safe
system level ESD design. Real case with 2k/330pF gun discharge module model show limits of this practice. This paper
will present a specific failure mechanism from this gun model
and new approach for SEED
A.2 Net ESD Characterization by SEED-Style Pin Modeling
Benjamin Orr, Pratik Maheshwari, David Pommerenke, Missouri University of Science and Technology; Harald Gossner,
Intel Mobile Communications
Using SEED-style high voltage SPICE modeling techniques, a
MIPI interface consisting of three differential pairs is developed
for studies in ESD injection. By modeling both the driver and receivers of each end of the net, as well as the transmission lines
between them, predictions can be made about the direction of
injected ESD currents.
A.3 Transient System-Level ESD Modeling of an Automotive Voltage Regulator
Rémi Bèges, Fabrice Caignet, Nicolas Nolhier, LAAS CNRS
A voltage regulator model for transient system level ESD simulation, including core description, has been developed with the
aim to reproduce the electrical behavior and RESET function
during an ESD. Main trends in soft-failure robustness are predictable. This complete model of the component is described
and validated by injecting various ESD stresses.
A.4 Rationalization of ESD System-Level Stress Characterization of Integrated Circuits
A. Salles, P. Besse, J-P. Laine, O. De Barros, J-L Charlet,
Freescale Semiconductor
In this paper, we intend to share our experience on ESD Gun
testing using various setups. Based on tests results, we will
propose time saving solutions to identify weaknesses against
the whole ESD system level setup that can be required for an
Analog IC.
A.5 The ‘Other’ IEC Immunity Tests and a Methodology to
Model and Improve System Performance
Agha Jahanzeb, Rajen Murugan, Jie Chen, Bart Basile, Chris
Barr, Mekre Mesganaw, Neil Zhang, Texas Instruments
In addition to the commonly used system level ESD immunity
test which is based upon the IEC 61000-4-2 specification, there
are a number of other IEC 61000-4-x specifications that are
also needed as a part of conforming to standard electromagnetic compatibility or EMC requirements. It is the objective of
this communication to provide an overview of these ‘other’ IEC
tests and discuss techniques of improving the system performance. These methods of protection from these other transient
system-level stresses may be similar or different to what are
used for the system-level ESD.
A.6 Introduction to Fast Transient Characterization
Dietmar Walther, Hans-Juergen Rothermel, Torsten Brandes,
Texas Instruments Deutschland GmbH; Michael Zwerg,
Texas Instruments
An introduction to fast transient characterization (FTC) is provided. The FTC is based on equipment from Langer EMV and
allows powered-up analysis of a device during direct stressing
of pins using fast transient pulses. Good correlation has been
found between the FTC method and the system level ESD/EFT
performance of a device.
A.7 Novel 3D Back-to-Back Diodes ESD Protection
B.Courivaud, IPDIA, CNRS-LAAS, Université de Toulouse;
N.Nolhier, M.Bafleur, F.Caignet, CNRS-LAAS, Université de
Toulouse; G.Ferru, IPDIA
A 3D technology is used to design ESD protection devices.
Based on back-to-back diodes, these devices are dedicated
to first stage, external ESD protection. These devices should
be more than robust as existing two dimensional structures regarding ESD stress for a significant area reduction. The specific trench configuration should improve cumulative ESD stress
robustness.
A.8 Failure Analysis Challenges for 3D Stacked ICs
Ingrid De Wolf, imec, KU Leuven; Alain Phommahaxay, Wang
Teng, Dimitri Linten, imec; Stefano Guerrieri, Micron Technology
This paper discusses some common and new techniques that
offer very promising applications for failure analysis (FA) of 3D
stacked ICs. Applications include but are not limited to: the location of opens and shorts, barrier breakdown and void detection in TSVs, and failure analysis of a Kelvin structure.
11
Technical Session B: EOS & Characterization
B.1 Non-EOS Root Causes of EOS Damage
Alan Righter, Ed Wolfe, Jean-Jacques Hajjar, Analog Devices
Failure signatures resembling damage from direct electrical overstress (EOS) events may not always have their root
cause from an EOS transient. The authors describe examples
from packaging and test escapes where the failures had a root
cause from another source. Containment or root cause resolution in each case is described.
B.2 Transient Latch-up (TLU) Investigations on 12V-Supplied Microcontroller in 0.45μm Technology
Andy Noiret, Alexander Schaab, Daniel Jäcksch, Micronas
During the qualification of an automotive MCU in 0.45μm technology, several cases of EOS have been found. The strong
correlation between the hot switching of an uncharged capacitor on one internally regulated 5V-supply pin and the silicon
damages observed indicates a TLU mechanism. This was confirmed with TLP pulses on powered ICs.
B.3 Characterization Methodology to Evaluate ESD Clamp
Robustness Against EOS
Jorge Loayza STMicroelectronics, Ampère; Nicolas Guitard,
Blaise Jacquier, Alexandre Dray, Philippe Galy,
STMicroelectronics; Bruno Allard, Luong Viêt Phung, Ampère
Pre-defined EOS representative waveforms are selected. A
methodology is then proposed for characterizing the behavior
of protection clamps in these conditions. The objective is
to characterize safe-operating area with respect to EOS
conditions. Failures of clamps are crucial information for design
improvements under targeted EOS specifications.
B.4 Wunsch-Bell Based Area Estimation Beyond ESD Stress
Michael Mayerhofer, Filippo Magrini, Yiqun Cao
Infineon Technologies
ESD as a pulsed stress condition is just one of a manifold number
of pulses in the automotive industry which can harm integrated
circuit products. We demonstrate here a methodology where
we use standard 100 ns TLP measurements for ESD estimation
combined with Wunsch-bell know how to estimate the minimum
area for a dedicated pulsed stress, typically longer than in the
ESD case. We demonstrate an ISO7637-2 pulse stress and the
application of this advanced method.
B.5 100ns-10ms TLP for Investigation of EOS Issues
Shuang Zhao, Theo Smedes, NXP Semiconductors
As part of the investigation of EOS issues from customer returns, TLP measurements with several pulse widths, from
100ns to 1500ns, have been carried out, and comparable failure signatures have been created that were comparable to
those of the customer returned samples. Qualitative correlation
can be seen between ESD/EOS failure and the pulse width of
TLP measurements. In addition TLP-like measurements with
millisecond current pulse have been done. Power-to-Failure vs.
Time-to-Failure relation is plotted for both submicron and millisecond TLP results, and fitted by power law respectively for
the two different time frames. Good agreement with the Dwyer
model has been obtained.
12
B.6 Thin Metal Interconnections Maximum Current Density Definition for ESD Events
Leonardo Di Biccari, Fiorella Pozzobon, Giansalvo Pizzo,
Andrea Boroni, Lorenzo Cerati, Antonio Andreini,
STMicroelectronics
The technological scaling is posing more and more stringent
constraints on metal interconnection design, especially for advanced smart power technologies, due to the very limited number of available metal levels combined to severe electromigration and System-level ESD requirements. A novel methodology
to correctly define and validate the maximum current density
for metal interconnections is presented.
B.7 Over Voltage Stress (OVS) Test Method Applied on an IC
Alain Kamdem, Jean-Luc Lefebvre, Presto Engineering;
Fanny Berthet, Patrick Martin, Normandie Universite
The electronic industry effort to reduce ESD failure rates has
let rise another type of EOS failure, different from ESD, named
OVS. Based on that, Presto Engineering starts a consortium
called SESAMES with the aim of deepening the understanding
of failure mechanisms, ageing and components physical limits
caused by OVS.
B.8 Test of Zener Diode Under Bi-Exponential Pulsed EOS
Feiyi Zhu, François Fouquet, Blaise Ravelo, Moncef Kadi
IRSEEM
This paper is devoted to the characterization of Zener diode under pulsed bi-exponential electrical overstress (EOS). Experimental tests were conducted for analyzing the diode behavior
and the corresponding electrical degradation. Observation on
experimental results illustrate the I(V) characteristic modification during the transient EOS time.
Technical Session C: ESD Testing & ESD Protection Development
C.1 Low-Cost Unselected Pin Capacitance Suppression
for Matrix-Type HBM Testers
Sander Sluiter, Theo Smedes, NXP Semiconductors
A low-parasitic option for “matrix” type HBM testers has been
designed and verified. The results are very promising. However, there are also some concerns. These need to be verified
in a follow-up project.
C.6 Stacked Power Clamp Design Challenges
Alain Loiseau, Robert Gauthier, Ephrem Gebreselasie, Lin
Lin, Andreas D. Stricker, IBM
When a power supply voltage exceeds the voltage rating of
the available power clamps, a common approach is to stack
multiple devices. This paper reviews some common problems
that can lead to degraded reliability with stacked ESD devices.
C.2 Proposal for Statistical Approach to CDM Testing for
High Pin-Count Devices
Agha Jahanzeb, Texas Instruments; Charvaka Duvvury
CDM stress time of high pin-count devices can be excessively
long - about an hour and a half for a 1000-pin device at a single
voltage. This time quickly adds up to several hours for a few
voltage levels with multiple samples required at each level.
This stress time can be shortened without sacrificing the quality of test by using a statistical method of sampling.
C.7 Unusual Latch-up Phenomenon and a Novel Solution
Without an Additional Cost
Teruo Suzuki, Fujitsu Semiconductor; Mitsuhiro Tomita,
Hiroshi Ikeda, Akiruno Technology Center
Unusual Latch-up phenomenon in the microcomputer with a
built-in flash memory was found. The root cause was found with
TCAD simulation and the Latch-up mechanism was explained.
A novel solution without an additional cost was offered. After
applying the solution, the Latch-up immunity was improved dramatically.
C.3 Comparison Analysis for ESD Failure Between Glass
Cleaning Process and Component-Level CDM Test for
CMOS Image Sensor Product
Han-Gu Kim, Chang-Su Kim, Kyoung-Sik Lim, Geon-Sik Cho,
Samsung Electronics
Comparison analysis for Electrostatic Discharge (ESD) failure
between glass cleaning process and component-level Charged
Device Model (CDM) test for CMOS image sensor product is
presented in this paper. The ESD failure mechanism for glass
cleaning process after assembly is analyzed and the failure location is found by SEM analysis. It is confirmed that the failure
points by ESD failure samples both glass cleaning process and
CDM test are the same.
C.4 Preliminary 3D TCAD Results on Ultra-Compact
BIMOS Merged SCR with Current Injector for ESD Protection in Bulk and FDSOI Advanced CMOS Technology
Philippe Galy, Johan Bourgeat, STMicroelectronics
BIMOS transistor is widely used as dynamic and static ESD
protection for advanced CMOS technology. Today, it appears
there is a drastic reduction of the Vt1 load for new technology
node. To address this new challenge a novel BIMOS merged
SCR with PNP current injector is introduced to reduce the triggering voltage of the protection and also to reduce the Vhold.
Moreover, to avoid the LU constraint it is possible to adjust
Vhold by topology parameter.
C.5 Overview of Point to Point ESD Protection Application
in CMOS 28nm bulk/FDSOI Technology
Johan Bourgeat, Nicolas Guitard, Jean Jimenez, Boris Heitz,
Philippe Galy, STMicroelectronics
Point to Point ESD protection has already been presented as
a good and very efficient solution in self-protected IO in 1.8V
This paper presents an extended application of this protection
applied to specific IO or IO configuration. The power device,
in bulk/hybrid area, is the same and simply the Bimos trigger
circuit is adjusted to reach specific needs in deep CMOS technology. 3D TCAD simulations have been realized but only measurements are presented.
C.8 ESD Protection of 700V NLDMOS in a 0.35μm Bulk
CMOS Process
Lutz Steinbeck, X-FAB Dresden GmbH & Co. KG; Angela
Konrad, Lars Bergmann, X-FAB Semiconductor Foundries
The ESD properties of 700V NLDMOS in a 0.35μm bulk CMOS
process were investigated by means of TLP measurements.
Options for improving ESD self-protection level and protectability by a parallel clamp and potential ESD protection devices are
discussed.
Call for Open Posters
In parallel to our reviewed poster sessions, all
workshop participants are allowed to present open
posters to discuss the latest developments in their
work. Use this opportunity to discuss new results
with your peers before they are in publishable
form. Note that the open posters will not be published by the IEW organization in any form. Therefore, discussing your open poster does not impact
later publication in any way.
Please indicate on the registration form your intention to bring a poster and send your draft by April
30, 2014, to the TPC Chair Lorenzo CERATI at
lorenzo.cerati@st.com. Updates and late submissions are possible until the start of the workshop.
For more details on posters at the IEW, see the
open-posters section of the IEW website: http://
www.esda.org/IEW.htm.
13
Monday, May 19, 2014 REGISTRATION AND CHECK-IN
12:00 PM-6:00 PM
Registration: Pick up badges and handouts.
12:00 PM-10:00 PM
Hôtel check-in: Get room assignment & room key.
Schedule
Monday, May 19, 2014
1:30 PM-2:50 PM
Seminar 1
System Level On-Chip ESD Protection
Vladislav Vashchenko, Maxim Integrated Products
2:50 PM-3:05 PM
3:05 PM-4:25 PM
4:25 PM-4:40 PM
4:40 PM-6:00 PM
6:00 PM-7:00 PM
7:00 PM-8:30 PM
Break
Seminar 2
EMC/ESD Design and Characterization for Automotive Applications
Patrice Besse, Freescale Semiconductor
Break
Seminar 3
EOS-A Big Challenge in Today‘s Handling of Customer Rejects
Gerold Schrittesser, Infineon Technologies
Dinner
Evening Talk: GRENOBLICIMES
Tuesday, May 20, 2014
8:00 AM-8:10 AM
Welcome - Technical Program Introduction
8:10 AM-9:05 AM
Keynote: Compact Muon Solenoid (CMS)
9:05 AM-9:50 AM
Invited Talk 1: 3D IC Reliability Challenges: New Failure Mechanisms Demanding
9:50 AM-10:10 AM
10:10 AM-10:55 AM
for New Test Methods Ingrid De Wolf, imec
Break
Technical Session A:
A.1 System Efficient ESD Design (SEED) including 2kΩ/330pF RC Gun Module
Jean-Philippe Laine, Patrice Besse, Alain Salles, Freescale Semiconductor
A.2 Net ESD Characterization by SEED-Style Pin Modeling
Benjamin Orr, Pratik Maheshwari, David Pommerenke, Missouri University of Science and Technology; Harald Gossner,
Intel Mobile Communications
A.3 Transient System-Level ESD Modeling of an Automotive Voltage Regulator
Rémi Bèges, Fabrice Caignet, Nicolas Nolhier, LAAS CNRS
A.4 Rationalization of ESD System-Level Stress Characterization of Integrated Circuits
A. Salles, P. Besse, J-P. Laine, O. De Barros, J-L Charlet, Freescale Semiconductor
A.5 The ‘Other’ IEC Immunity Tests and a Methodology to Model and Improve System Performance
Agha Jahanzeb, Rajen Murugan, Jie Chen, Bart Basile, Chris Barr, Mekre Mesganaw, Neil Zhang, Texas Instruments
A.6 Introduction to Fast Transient Characterization
Dietmar Walther, Hans-Juergen Rothermel, Torsten Brandes, Michael Zwerg, Texas Instruments
A.7 Novel 3D Back-to-Back Diodes ESD Protection
B.Courivaud, IPDIA, CNRS-LAAS, Université de Toulouse; N.Nolhier, M.Bafleur, F.Caignet, CNRS-LAAS,
Université de Toulouse; G.Ferru IPDIA
A.8 Failure Analysis Challenges for 3D Stacked ICs
Ingrid De Wolf, imec, KU Leuven; Alain Phommahaxay, Wang Teng, Dimitri Linten, imec; Stefano Guerrieri, Micron Technology
14
Tuesday, May 20, 2014 - continued
10:55 AM-12:15 PM
12:15 PM-1:20 PM
1:20 PM-1:30 PM
1:30 PM-1:35 PM
1:35 PM-2:20 PM
Poster Discussion Session A
Lunch
Open Time
Announcements
Invited Talk 2: ESD/Latch-Up/EOS Support Through Foundry Business in HV
Technologies
Wolfgang Reinprecht, Austria Microsystems
2:20 PM-3:05 PM
Invited Talk 3: Change of Electrical Requirements in Automotive Application
Andreas Kucher, Infineon Technologies
3:05 PM-3:20 PM
3:20 PM-4:05 PM
Break
Technical Session B:
4:05 PM-5:25 PM
5:25 PM-6:25 PM
6:25 PM-7:25 PM
7:25 PM-8:25PM
B.1 Non-EOS Root Causes of EOS Damage
Alan Righter, Ed Wolfe, Jean-Jacques Hajjar, Analog Devices
B.2 Transient Latch-up (TLU) Investigations on 12V-Supplied Microcontroller in 0.45μm Technology
Andy Noiret, Alexander Schaab, Daniel Jäcksch, Micronas
B.3 Characterization Methodology to Evaluate ESD Clamp Robustness Against EOS
Jorge Loayza, STMicroelectronics, Ampère; Nicolas Guitard, Blaise Jacquier, Alexandre Dray, Philippe Galy,
STMicroelectronics; Bruno Allard, Luong Viêt Phung, Ampère
B.4 Wunsch-Bell Based Area Estimation Beyond ESD Stress
Michael Mayerhofer, Filippo Magrini, Yiqun Cao, Infineon Technologies
B.5 100ns-10ms TLP for Investigation of EOS Issues
Shuang Zhao, Theo Smedes, NXP Semiconductors
B.6 Thin Metal Interconnections Maximum Current Density Definition for ESD Events
Leonardo Di Biccari, Fiorella Pozzobon, Giansalvo Pizzo, Andrea Boroni,Lorenzo Cerati, Antonio Andreini, STMicroelectronics
B.7 Over Voltage Stress (OVS) Test Method Applied on an IC
Alain Kamdem, Jean-Luc Lefebvre, Presto Engineering; Fanny Berthet, Patrick Martin, Normandie Universite
B.8 Test of Zener Diode Under Bi-Exponential Pulsed EOS
Feiyi Zhu, François Fouquet, Blaise Ravelo, Moncef Kadi, IRSEEM
Poster Discussion Session B
Discussion/Special Interest Group Session A: Parallel Groups
SIG A.1 - ESD Technology and EDA Parameters
DG A.2 - IEC Standards for EMC Testing
DG A.3 - Latch-up Testing Today
Dinner
Discussion/Special Interest Group Session B: Parallel Groups
DG B.1 - Electrical Over Stress at IC and System Levels – which Definition and Events
are Related?
DG B.2 - Upcoming ESD Issues
DG B.3 - Can IP (IO) Validation Guarantee Future IC Products’ ESD Immunity?
Wednesday, May 21, 2014
8:00 AM-8:05 AM
Announcements
8:05 AM-8:20 AM
8:20 AM-8:35 AM
Reports on DG/SIG Session A
Reports on DG/SIG Session B
8:35 AM-9:55 AM
9:55 AM-10:10 AM
10:10 AM-10:25 AM
Seminar 4
GaN Electronics and Optoelectronics from ESD Perspective.
Dionyz Pogany, Vienna University of Technology
Group Picture
Break
15
Wednesday, May 21, 2014 continued
10:25 AM-11:45 AM
11:45 AM-12:45 PM
12:45 PM-5:00 PM
5:00 PM-6:00 PM
6:00 PM-7:00 PM
7:00 PM-8:20 PM
Seminar 5
The Proposed New ESDA/JEDEC Joint CDM Standard: Considerations, Investigations and Improvements
Alan Righter, Analog Devices
Lunch
Free Time
Discussion/Special Interest Group Session C: Parallel Groups
DG C.1 - EOS in Automotive Applications
DG C.2 - The Joint ESDA/JEDEC CDM Standard and Future Roadmap of CDM
Dinner
Seminar 6
Foundry ESD Offering
Efraim Aharoni, TowerJazz
Thursday, May 22, 2014
16
8:00 AM-8:05 AM
Announcements
8:05 AM-8:20 AM
Reports on DG/SIG Sessions C
8:20 AM-8:35 AM
Industry Council Report
8:35 AM-9:20 AM
Invited Talk 4: ESD Challenges for FDSOI UTBB Advanced CMOS Technologies
Philippe Galy, STMicrolectronics
9:20 AM-9:40 AM
9:40 AM-10:25 AM
Break
Technical Session C:
C.1 Low-Cost Unselected Pin Capacitance Suppression for Matrix-Type HBM Testers
Sander Sluiter, Theo Smedes, NXP Semiconductors
C.2 Proposal for Statistical Approach to CDM Testing for High Pin-Count Devices
Agha Jahanzeb, Texas Instruments; Charvaka Duvvury
C.3 Comparison Analysis for ESD Failure Between Glass Cleaning Process and Component-Level
CDM Test for CMOS Image Sensor Product
Han-Gu Kim, Chang-Su Kim, Kyoung-Sik Lim, Geon-Sik Cho, Samsung Electronics
C.4 Preliminary 3D TCAD Results on Ultra-Compact BIMOS Merged SCR with Current Injector for
ESD Protection in Bulk and FDSOI Advanced CMOS Technology
Philippe Galy, Johan Bourgeat, STMicroelectronics
C.5 Overview of Point to Point ESD Protection Application in CMOS 28nm Bulk/FDSOI Technology
Johan Bourgeat, Nicolas Guitard, Jean Jimenez, Boris Heitz, Philippe Galy, STMicroelectronics
C.6 Stacked Power Clamp Design Challenges
Alain Loiseau, Robert Gauthier, Ephrem Gebreselasie, Lin Lin, Andreas D. Stricker, IBM
C.7 Unusual Latch-up Phenomenon and a Novel Solution Without an Additional Cost
Teruo Suzuki, Mitsuhiro Tomita, Hiroshi Ikeda, Akiruno Technology Center
C.8 ESD Protection of 700V NLDMOS in a 0.35μm Bulk CMOS Process
Lutz Steinbeck, X-FAB Dresden GmbH & Co. KG; Angela Konrad, Lars Bergmann, X-FAB Semiconductor Foundries
10:25 AM-10:35 AM
2015 Announcements and Closing
10:35 AM-11:55 AM
Poster Discussion Session C
By 11:30 AM
11:55 AM-1:00 PM
Hôtel Check-Out
Lunch
Travel Arrangements & Accommodations
IEW ACCOMMODATIONS:
The Grand Hôtel de Paris is a legend within the Vercors Natural Park. The hôtel, more than a century
old, is the oldest and most impressive in the Vercors. The adventure began in 1894 and 6 generations later, the story continues. The traditional restaurant offers high quality, authentic and generous
cuisine; The chef innovates with his vision of traditional French dishes.
Located in a three-hectare private park in Villard de Lans, the Grand Hôtel offers access to all the
facilities of a touristic town: ice rink, water park and fitness centre, casino, bowling alley, night club,
cinema, coach station, and shuttle service to the ski slopes. Come and sample the joys of the Vercors
from this charming hôtel.
Exceptional quality bedrooms (standard, superior, junior and family) all have a bath or shower room
with a hair dryer, telephone, satellite TV and free WIFI.
The hôtel SPA has a sauna, Turkish bath, jacuzzi, and a spa pool with massage jets.
Guests and Spouses:
You are welcome to bring a guest to IEW. Accommodations are available for spouses and guests in the
same room for an extra $525 US dollars per person. Guest fees are payable to ESDA. Guests will be
charged for full stay, no partial stay allowed. Attendees must list guests with their initial registration to
allow for room arrangements. For accommodations including children please contact ESDA for more
information.
● Arrangements can be made for those with special dietary or physical requirements. Please send your
requirements with the registration or call 1-315-339-6937.
● Please have lunch before you arrive at the Conference Center on Monday; there is no lunch available
on Monday.
RESPONSIBILITIES OF ATTENDEES:
Please come prepared to participate actively in the discussions and meetings by sharing your experiences, concerns, questions, views, technical information, and test data, as appropriate. Your active
involvement in the formal, as well as in the informal meetings and activities, is the key ingredient for
maximizing the value of the workshop for you and your fellow attendees. Enjoy IEW!
In keeping with the relaxed and informal atmosphere of the Workshop, we ask that attendees not
overtly solicit, promote, or attempt to sell a commercial product or service at the Grand Hôtel de Paris.
On the other hand, we strongly encourage making business acquaintances and arranging meetings to
be held after the workshop.
Guest Activities:
Leisure activities in the Vercors Natural Park
In the Vercors you will find an exceptional micro-climate which is in a protected environment enjoying
an unequalled variety in terms of landscape as well as animal and plant life. An amazing land of adventure for visitors of all ages. There are many different activities and you certainly will not get bored
here in the Vercors. Hiking (on foot, horseback, bicycle, accompanied by donkeys, etc.), paragliding,
mountain-biking, pot-holing, canyoning: the Vercors offers a unique playground to turn your visit into a
real adventure.
http://en.ghp-vercors.com/loisirs-ete-ghp-vercors.htm
17
ADDRESS:
Grand Hôtel de Paris - 124, Place Chabert 38250 VILLARD DE LANS, France
Tel :(33)-04-769-51006 fax : (33)-04-769-51002 - ghp@ghp-vercors.com
http://www.bestwestern.fr/en/hotel-Villard-De-Lans,Best-Western-Grand-Hotel-De-Paris,93185
Maps: http://tinyurl.com/lzpf5lb
DIRECTIONS:
From Lyon St Exupéry International airport:
Airport shuttle: www.faurevercors.fr/FAUREVERCORS_WEB/UK/Reservation.awp
By Train: http://uk.voyages-sncf.com/en/ to reach first Grenoble station.
Bus from Grenoble station. www.transisere.fr directly to the hôtel.
By Car: 1 hour 30 min. Take D29 toward Chambéry, Grenoble. Merge onto A432 and 3 km after onto the A43 toward
Turin-Milan-Grenoble. 30 km after take exit to merge onto A48 toward Valence-Grenoble. Take exit 14 toward SaintEgreve/Le Fontanil. At the roundabout, take the 4th exit onto D1532. At the roundabout, take the second exit onto Rue
de Villard de Lans/D531. Continue to follow D531 going through 3 roundabouts. Turn left onto Rue Pasteur. Turn left onto
Pl. Pierre Chabert. Hôtel is on the right !
From Geneva Cointrin International airport, Switzerland:
By Car: 2 hours 30 Min. Take E25 toward A1a France. Continue onto A41 to Grenoble. Take exit to merge onto N87
toward Gières, Domaine. 10 km after take exit to merge onto A480 toward Grenoble-centre. Take exit 3a toward Seyssinet-Pariset,Villard de Lans. Keep right toward N532 Seyssinet-Pariset. 2 km after take 2nd exit at the roundabout onto
Boulevard Paul Langevin. At the roundabout, take the second exit onto Rue de Villard de Lans/D531. Continue to follow
D531 going through 3 roundabouts. Turn left onto Rue Pasteur. Turn left onto Pl. Pierre Chabert. Hôtel is on the right !
From Paris CDG (Charles de Gaulle) International airport:
High-Speed Rail (TGV) to Grenoble www.uk.voyages-sncf.com/
en/.
It will take around 3 hours to get to Grenoble, from there you will
have to take the bus to the hôtel.
By car: Paris to Villard de Lans: 6 hours 30 min.
Paris to Lyon (A6) then Lyon to Grenoble (A43) motorways-from
there follow the directions given from Lyon above.
18
International ESD Workshop Registration Form
May 19-22, 2014 Grand Hôtel de Paris, 124, Place Chabert 38250, Villard de Lans, France
Workshop registration includes a room reservation and provided meals
Attendee:
Company:
Address:
City:
State:
)
Phone: (
Address is: (Please check one) Zip:
Country:
Fax: (
E-mail:
home or
office
Please check here if you do not wish to receive mail other than from ESDA
)
Check if, under the Americans with Disabilities Act, you require any auxiliary aids or services.
•Please List Your Guests: Adults (Name)
Guests staying in the room of a registered attendee will be charged $525 US dollars per person. Guest fees are payable to ESDA. Guests
will be charged for full stay, no partial stay allowed. For accomodations including children please contact ESDA for more information.
•Please indicate any special dietary needs.
Arrival: Date
Time
• Departure: Date
Time
Advanced Registration Fees
Cost after April 4, 2014
ESDA Member Non-ESDA Member
$1,655
$1,855
ESDA Member / Non-ESDA Member
$2,055
The registration fee includes full workshop attendance and handout materials, seminar attendance, three nights’ lodging
(Mon-Wed), nine meals (dinner Monday through lunch Thursday), as well as morning and afternoon snacks and drinks.
Students wishing to apply for reduced registration visit http://esda.org/IEW_registration.html. application deadline: April 4, 2014
Cancellation & refund requests will be considered if received in writing no later than April 4th 2014, and are subject to a $50 fee.
Any other approved dispositions will also be assessed a $50 fee.
Register Online at http://esda.org/onlineregistrations.html
Method of Payment
Only U.S. currency, checks drawn on a U.S. bank that is a
member of the U.S. Federal Reserve will be accepted.
Check
Credit Card (check one)
AMEX®
Visa®
MasterCard®
Discover®
Card Number:
Exp. Date:
Total Enclosed $
Make checks payable to: ESD Association
Purchase orders not accepted for registration
Security Code:
Name on Card:
Signature:
Discussion/Special Interest Groups
I am interested in the following discussion/Special Interest group(s)
Choose one from group A
SiG A.1
DG A.2
DG A.3
Choose one from group B
DG B.1
DG B.2
DG B.3
Choose one from group C
DG C.1
DG C.2
Posters
Will you be bringing a poster to the open poster session?
If yes, what is the title of your poster?
Yes
No
Special Interest Groups
1-28-2014
Would you like to form a new SIG?
Yes
No
If yes, what is the proposed topic for your group?
Send this completed form and payment to:
EOS/ESD Association Inc., 7900 Turin Rd., Bldg. 3, Rome, NY 13440-2069
Phone: +1-315-339-6937 p Fax +1-315-339-6793 p info@esda.org p www.esda.org
IEW 2015
International Electrostatic Discharge Workshop
SAVE THE DATE!
May 4-6, 2015
Granlibakken Conference Center & Lodge,
Lake Tahoe, CA
EOS/ESD Association Inc. 7900 Turin Rd., Bldg. 3 Rome, NY 13440-2069, USA
PH +1-315-339-6937 • Fax +1-315-339-6793 Email: info@esda.org • www.esda.org