MEMS hands-on access fab.

Hands-on Access for Fabrication Facility
Kentaro Totsu
Micro system integration center(μSIC), Tohoku University
totsu@mems.mech.tohoku.ac.jp
April, 2014
Requirement for MEMS R&D
- Development of design, process and evaluation
in individual cases > No standard !
- Expensive facility (clean room) and equipment
- Trained engineer
- Much know-how
Barrier
- Human network
prototype
Facility
Much time and cost
idea
Human
resource
Know-how
>> Open-access facility reduces the barrier for device
prototyping and manufacturing.
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Hands-on access fab., an open access facility at Tohoku Univ.
試作コインランドリ
The “Hands-on access fab.” is an open access facility that companies can
easily access and utilize for their prototyping or small volume production. The
fab. is shared with other users and managed with best efforts.
The fab. will not make contract development like MEMS foundry.
Companies which have not own facility can dispatch their people to operate
equipments by themselves.
The fab. is equipped with 4 and 6 inch facilities for semiconductor and MEMS.
Companies pay fee depending on usage. The users can make investment
small, because they are able to achieve prototyping of a device at appropriate
cost. As a result, the users can reduce the risk in development, and can bridge
R&D stage to manufacture stage more smoothly.
Companies can access accumulated know-how
at Tohoku University.
Skilled engineer staffs coach the user.
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Aobayama campus, Tohoku Univ.
Hands-on-access fab. Nishizawa
Center (4 and 6 inch MEMS and
semiconductor)
Micro-nano Center
(20mm, 2inch for MEMS and LSI)
MEMS lab. (20mm
for MEMS)
Tohoku University
MNOIC, AIST
(8 and 12 inch for MEMS)
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Jun-ichi Nishizawa Memorial Research Center
東北大学西澤潤一記念研究センター
Main building (utility)
Main building
(research)
Hands-on-access fab. 試作コインランドリ
User: over 150 companies
Sendai MEMS showroom
2nd building
Main building (office)
Total area：8,976m2
Historical museum of technology
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Layout of the Hands-on access fab.
(2nd floor of the Research Center)
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Cleaning, drying
Draft chamber
Draft chamber
Brush scrubber
Spin dryer
HF/HNO3/H2SO4/HCl etc.
Organic solvent,
resist removing
Zenkyo
post polishing
SEMITOOL PSC101
CO2 critical point
dryer
Inert oven
Vacuum oven
Spin dryer
SCFluids CPD1100
Yamato DN63H
Yamato DP-31
Toho Kasei
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Photolithography
Pattern generator
Laser writer
Spin coater
Spin coater
NSK TZ-310
For emulsion / Cr mask
making, up to 7inch
Heidelberg instruments
DWL2000CE
Mikasa 1H-DXII etc.
Actes ASC-4000
Coater/developer
Hot plate
Clean oven
Curing furnace
Yamato DE62
Yamato DN43H
For polyimide
Canon CDS-630
For positive resist
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Photolithography
Stepper
Double-side aligner
x2
Canon FPA1550M4W
g-line, 0.65µm、4inch
Single-side aligner
EB lithography
Suss Microtech
MA6/BA6
Canon PLA-501-FA
Raith 50
30nm, up to 3inch
Draft chamber
UV curing
Spray developer
EB lithography
For development
Ushio UMA-802
Actes ADE-3000S
-8 inch, vacuum/mechanical
chuck
Elionix ELS-G125S
Max130keV, 4nm, up to 6”
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Oxidation, diffusion, ion implantation, annealing
Oxidation/diffusion
furnace
Middle-current ion
implanter
High-current ion
implanter
Annealing
TEL XL-7
Nissin ion NH-20SR
Max. 180keV, 0.6mA
Sumitomo eaton nova NV-10
Max. 80keV, 6mA
AG Associates AG4100
1000OC
Metal diffusion furnace
Koyo lindberg Model270
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Deposition (CVD, sputtering, evaporation, etc)
LP-CVD
Thermal CVD
PE-CVD
PE-CVD
Kokusai
SiN, Poly-Si, NSG
Kokusai
Epi-Poly Si, 1200OC
Sumitomo MPX-CVD
SiN, SiO2
Sumitomo MPX-CVD
TEOS SiO2
PE-CVD
Sputtering
Sputtering
Sputtering
JPEL VDS-5600
SiN, SiO2
Anelva SPF-730
5inch target x 3
Shibaura CFS-4ESII x 2
3inch target x 3
Shibaura !-Miller
3inch target x 4
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Deposition (CVD, sputtering, evaporation, etc)
W-CVD
EB evaporation
Automatic sol-gel
deposition
Applied materials
Precision 5000
Anelva EVC-1501
Technofine PZ-604
MOCVD
Wacom Doctor-T
PZT, up to 8inch
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Etching
Si Deep-RIE
x4
Dry etcher
Dry etcher
Al RIE
Sumitomo MUC-21
Anelva DEA-506
For SiN, SiO2 etching
Anelva L-507DL
For Si etching
Shibaura HIRRIE-100
RIE
ECR etcher
Asher
Ar ion milling
Ulvac RIH-1515Z
Anelva ECR6001
3 inch GaAs
Branson IPC4000
13.56MHz, 600W
NS, Hakuto 20IBE-C
Cl2、BCl3、SF6、CF4、CHF3、Ar、O2、N2
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Bonding, packaging, imprinting etc.
Polisher
Polisher
Wafer bonder
Dicer
BN technology
Bni62
BN technology
Bni52
Suss Microtech
SB6e
Disco DAD522, DAD2H/6T
Wire bonder
Reflow furnace
Laser marker
Sand bluster
West Bond
Al, Au
Shinko FB-260H/TE
GSI WM-II
Shinto
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Bonding, packaging, imprinting etc.
Wafer aligner
Wafer bonder
Epoxy injection
chamber
UV imprinting
EVG Smart View
EVG 520
EVG 520
Toshiba machine ST50
Thermal imprinting
Excimer lamp cleaner
Electroplating
Origin electric
Reprina-T50A
Dernaechste
EXC-1201-DN
Yamamoto
Cu, Ni, Sn, Au
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Measurement
Wafer dust counter
Film thickness
measurement
Topcon WM-3
Nanometric
NanoSpec 3000
Depth measurement
4-terminal probe
Union Hisomet
Surface profiler
Surface profiler
Dektak 8
Tenchor AlphaStep 500
Spreading resistance
measurement
Wafer prober
Solid State Measurements
SSM150
Accretech EM-20A
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Measurement
Laser/white light
confocal microscope
Digital microscope
SEM
FE-SEM
Lasertec
OPTELICS HYBRID L3-SD
Keyence and Kunoh
Hitachi S3700N
Max. 12 inch, EDX
Hitachi S5000
X-ray micro CT
Ultrasonic microscope
IR microscope
TOF-SIMS
Comscan techno
ScanXmate D160TS110
Insight IS350
Olympus, Hamamatsu
CAMECA TOF-SIMS IV
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Measurement
Ellipsometry
Ellipsometry
AFM
Photonic Lattice SE-101
ULVAC
Digital Instruments
Dimension3100
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How to use Hands-on access fab.
1. Consultation
2. Send application to the Univ.
3. Use facility at Hands-on access fab.
4. Receive bill from the Univ.
5. Payment
Fees
Facility (CR, office, etc.) usage fee : JPY 700 /h*
Technical assistant fee :
JPY 5,565 /h (3,150/h)*
Equipment usage fee :
max. JPY 10,000 /h
Materials cost
* Nanotechnology platform users
If a company uses the Hands-on-access fab for a week, the average
payment will be JPY100,000. At the end of each month, the university
calculates the fee for one-month usage of each company. Then in the
middle of next month, the university sends a bill to each company.
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Users
700
600
Tohoku Univ. users
Company users
Users / month
500
400
300
200
100
0
4 5 6 7 8 9 10 11 12 1 2 3 4 5 6 7 8 9 10 11 12 1 2 3 4 5 6 7 8 9 10 11 12 1 2 3 4 5 6 7 8 9 10 11 12 1 2 3
2010
2011
2012
2013
2014
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Users list (~150 companies)
Niigata
Institute
of Niigata
Pref.
Hyogo
Sumitomo
Precision
Products
Yamamoto
Electric Works
Univ. of Hyogo
Osaka
Kyoto
Tecdia
Kyocera
Sumitomo
Electric
Industry
Panasonic
Tottori
Tottori Univ.
Yamagata
Chino
Mitsumi
Yamagata Univ.
Yamagata Research
Institute Of
Technology
Tsuruoka NTC
Akita
Ahiko Fine Tech Akita Epson
Toyama
Hokuriku
Electric
Industry
Hokkaido
Kyosemi
Fine Crystal
Gunma
Taiyo Yuden
Shin-Etsu
Aomori
Aomori Pref. Industrial
Technology Research Center
Iwate
Iwate Univ.
Lightom
Ricoh Optical
FTC Corporation
Miyagi
Mems Core
Kuramoto
Advantest
Furukawa NDK
ICR
Smart Solar
Technofine
MG
Ricoh
RIKEN
Abelieve
Fukushima
EMC Semiconductor
Munekata
AGC Electronics
Fukuoka
Kyusyu Univ.
Nakatani Sangyo
Pacal Technologies Japan
Mitsumaru
Photonic Lattice
Dexerials
Tohoku Univ.
Nihon Univ.
Maruwa Quartz
Fukushima Sanken
Tochigi
Keihin
Ibaraiki
JAEA
Ricoh Printing Systems JAXA
Shiga
EUVL
Ritsumeikan
Chiba
Maruzen
Univ.
Toray Research
Furukawa Electric Petrochemical
Center
Shizuoka
TDK
Seiko Instruments
Hamamatsu
Youtec
Mie
Photonics
Toho
Saitama
Wacom
AZ Electronic
Kagawa
Nagano
Engineering
Nippon
Signal
Materials
Aoi Electronics
Seiko Epson
Tokyo
Namiki Precision
Yokogawa Electric
Nagano Keiki Shizuoka Univ.
Takion
Jewel
Nanox Japan
Infinity Storage Media Univ. of Tokyo
Oji Holdings
Aichi
CKD
BN Technology
BEANS Laboratory
Konica Minolta
NGK
Yuka Industries
Rion
Adamant
Nagoya Institute
MD Innovations
ASET
of Technology
Singapore
Kanagawa
Suss Micro Tech
Toshiba
Institute of
NTT-AT
M.T.C
Keio Univ.
Microelectronics (IME)
Tokyo Polytechnic
NLT Technologies
Fujitsu Laboratories
Univ.
Kyodo International
JVC Kenwood
NICT
Overseas
Korea
Samsung
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User cases
• Single process (deposition, etching, etc.)
• Total process (sensor, semiconductor, etc.)
• Evaluation (observation, measurement, etc.)
• Equipment manufacture’s demo
• Training
Si anisotropic wet etching
Si deep reactive ion etching
Epi Poly-Si over 20µm-thick
Small scallops
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Device prototyping
•
•
•
•
•
•
•
•
•
•
•
•
Acceleration sensor
Pressure sensor
Si microphone
Magnetic sensor
Gas sensor
Photo diode
Solar cell
Quartz device
Piezoelectric device
Micromirror device
Microfluidic device
Radiation sensor(already commercialized)
etc.
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Income
1000
Income ( x10,000 JPY) / month
900
800
Tohoku Univ. users
700
Companies
600
500
400
300
200
100
0
4 5 6 7 8 9 10 11 12 1 2 3 4 5 6 7 8 9 10 11 12 1 2 3 4 5 6 7 8 9 10 11 12 1 2 3 4 5 6 7 8 9 10 11 12 1 2 3
2010
2011
2012
2013
2014
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Revenue and expenditure (FY2013)
Total : JPY 246 M
Revenue
Expenditure
Travel
3M
Facility
maintenance
7M
Users fee
89M
FIRST project
116M
Nanotechnology
platform project
41M
The
others
28M
Facility usage
15M
Equipment
maintenance
20M
Personnel
52M
New equipment
43M
Expendables
Air conditioning
35M
heating, lighting
39M
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Activity
Providing the fab. service
Installation, modification and maintenance
Development of system including software
Booking system, information sharing, safety course
Process development
Fundamental technology (CVD, photolithography, etching, etc.)
New materials installation
Evaluation
Training
On the job training
Practical training program organized
by MEMS Park Consortium (3 months)
Training program for semiconductor
industry in Tohoku region
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Thermal CVD for Epi Poly-Si
Power supply: 150kHz, 100kW
4” x 8 or 6” x 4
Rotatable SiC susceptor
Max. temp. :1100OC
Source gas: SiH2Cl2
Doping gas: PH3(5%)
Carrier gas: H2
Cleaning gas: HCl
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Epi Poly-Si deposition
Thermal oxidation
SiO2 1µm
Si
Poly-Si CVD, 800oC
Poly-Si 100nm
Epipoly-Si CVD
Epi Poly-Si
1000oC
SiH2Cl2: 200 sccm
PH3(5%): 10 sccm
H2
: 15 SLM
Columnar Epi Poly-Si
O
1000 C
Random
Small
Poly-Si
Grains
O
800 C
Si
SiO2
Deposition rate :45 μm / 60min = 0.75µm / min
Stress : 40MPa, compressive
Resistivity : 0.002 Ω・cm
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Si DeepRIE process development
5μm 10μm 20μm
50μm
100μm
Si etching rate: 2.5μm/min
Si/SiO2 selectivity: 310
Small scallop
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MEMS Training Program
•
Originally started as a part of METI program in 2007 and operated by MEMS
Park Consortium since 2008
•
Comprehensive training program containing planning,
design, fabrication, testing, report for MEMS R&D
•
Practical training and lecture-based training
•
The fee is approx. JPY 1M.
Ex. Capacitive 3-axis accelerometer
10 ~ 20 d
30 ~ 60 d
~ 10 d
3d
Planning,
design
Fabrication
Testing
Presentation,
report
(4 inch process)
Participants:
RICOH, MEMS CORE, PENTAX, ADVANTEST, ALPS ELECTRIC, NIPPON DENPA,
SYSTEC INOUE, YAMAHA, TOPPAN, KONICA MINOLTA, SEKISUI, MURATA, FUJI
MACHINE, DENSO, AHIKO, YAMAMOTO ELECTRIC WORKS, JAXA
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Product manufacturing
•
•
Product manufacturing by company user is available since June 2013.
The purpose of this production is
We prove University’s R&D result as a product in the market and society.
Result or problem through production accelerates University’s R&D and
education.
<Requirement>
• The device should be developed under University’s cooperation, and should be
continuously developed at the fab.
• Occupied area and time should be less than 5% of total capacity.
• A report to University is required every 6 months.
• Maximum period for one type of device production is 3 years.
<Note>
• University states exemption from responsibility.
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R&D cycle model with product manufacturing
New market
Product
Employment
manufacturing
Social demands
Needs
Technological
support
Prototyping
R&D
cycle
Know-hows
Students
Journal papers
Education,
Research
Problems
New subjects
(Reliability, etc.)
Industry is the school of learning.
産業は学問の道場なり
(Dr. Kotaro Honda,
former President of Tohoku Univ.)
Other subjects
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Challenge
Since starting of the Hands-on-access fab in April 2010, we re-start and modify
old equipment, and install new equipment. Many company users have already
accessed the fab. This result reveals that the hands-on system (open-access
facility) is accepted by companies. We try to find out a sustainable model by
making efforts to increase the number of uses. The fab continues supporting
company to accelerate commercialization.
•
•
•
•
•
Build up sustainable system
Support new business, companies
Develop and keep skillful engineers
Improve and maintain quality of equipment
Accumulate practical know-how
Hands-on-access fab, a part of your home facility
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Acknowledgement
Equipment installation, operation, process development at the Hands-on-access
fabrication facility are supported by following projects;
2010-2013
“Funding Program for World-Leading Innovative R&D on Science and Technology (FIRST
Program)” of the Japan Society for the Promotion of Science (JSPS), initiated by the Council
for Science and Technology Policy (CSTP).
2012“Nanotechnology Platform” of the Ministry of Education, Culture, Sports, Science and
Technology (MEXT).
2011-2012
“Innovation Center Establishment Assistance Program (corporate demonstration/evaluation
facility development program)” of the Ministry of Economy, Trade and Industry (METI).
Hands-on-access fab. facility received “METI Minister Award 2013
for Industry-Academia-Government Collaboration Contribution”
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