IMEC`S INTEGRATED SILICON PHOTONICS PLATFORM

IMEC`S INTEGRATED SILICON PHOTONICS PLATFORM

IMEC’S INTEGRATED SI-PHOTONICS PLATFORM (ISIPP50G)
Imec offers an integrated silicon photonics (iSiPP50G) platform targeting the telecom, datacom and medical diagnostics industries.
The iSiPP50G platform co-integrates a wide variety of passive and active components, enabling competitive photonic integrated
circuits for short reach optical interconnects. Regular multiproject wafer (MPW) runs are available at fixed tape-in dates, enabling cost
competitive access by sharing mask, process and engineering costs. Ease of access is enabled through an extensive process design kit
(PDK). In addition, technology customization options are available through dedicated wafer fabrication services, which include full-size
reticles, delivery of full wafers, and access to specialty modules enabling advanced functionality.
ISIPP50G
The platform enables cost-effective silicon photonic ICs for:
O High-performance optical transceivers (50Gb/s and beyond) for
datacom, telecom and access networks
O Optical sensing (gas, pressure, strain) and read-out ICs
O Biomolecule detection, drug development, point-of-care diagnostics
The iSiPP50G platform co-integrates a wide variety of passive and active
components to support a wide range of optical transceiver architectures
at data rates of 25Gb/s or 50Gb/s. The offered integrated components
include low-loss waveguides, efficient vertical grating or broadband edge
couplers, high-speed silicon electro-optic modulators, high-speed germanium-silicon electro-absorption modulators and high-speed germanium
waveguide photo-detectors. iSiPP50G offers state-of-the-art performance, design flexibility and superior CD and thickness control. It is a fixed
process technology (130nm) with a validated device library.
ISIPP50G DESIGN KIT
To enable users access, imec provides an extensive iSiPP50G process design
kit (PDK). This kit includes process documentation, library performance,
layout guidelines for custom, design and verification rules. The PDK is
available upon signature of imec’s Silicon Photonics Design Kit License
Agreement (DKLA).
ISIPP50G MPW ACCESS
iSiPP50G is a fixed process technology with a validated device library. To
lower the cost for access, MPW runs are available at fixed tape-in dates,
allowing to share mask, process and engineering costs. Users in the USA
can contact MOSIS for accessing the iSiPP50G technology for R&D and
prototyping. Outside the USA, users can contact Europractice-IC for access.
Modules
Description
Enabled devices
3 silicon patterning
steps
3 etch depths in 220nm Strip/rib waveguides,
Si: 70nm, 160n; 220nm
various passive optical
(193 nm litho)
devices, silicon taper
Gate oxide and PolySilicon layer
1 etch depth: full poly
etch (160nm) (193nm
litho)
Advanced grating
couplers, poly-Si waveguide
Ion implantation in Si
6 implants levels: 3x ntype and 3x p-type
Si carrier depletion,
injection and accumulatin devices, Ge
Photodectors, doped
Si resistors, ...
Ge module
100% Ge(Si) RPCVD se- Ge Photodectors
lective epitaxial growth Ge(Si) EA modulator
& 2x implants levels
Silicide tungsten
contact module
Ohmic contacts to
doped silicon
Standard CMOS contacts plugs, Tungsten
heater
Two-level metal interconnect
Cu-based two-level
metallization
Standard CMOS
interconnects
Aluminum passivation
Aluminium finish
metallization
Standard CMOS
interconnects
Deep trench
Deep trench to expose Edge couplers
edge coupler facets
50G TRAVELING-WAVE MACH-ZEHNDER MODULATOR (typical performance values)
Parameter
Typ.Value
Unit
Comments
Operation Wavelength
nm
GHz
GHz
dB
V
dB
O-band designs also available
at 0V bias
at -1V bias
(0.1GHz - 50GHz) at 0V bias
Electro-Optic Bandwidth (S21)
f3dB
RF Return Loss (S11)
Modulation efficiency
Optical Insertion Loss
Vπ
IL
1550
22
27
<-12
~11
-2.5
Dynamic Extinction Ratio
dER
2.2
dB
Not including bias induced loss
at 56Gb/s (2.5Vpp, quadrature bias point)
2.5V pp drive voltage (single-ended)
Phase-Shifter Length
Termination Resistance
L
RT
1.5
26
mm
Ohm
Doped Si resistor
S21
50Gb/s, 2.5Vpp
50G GESI ELECTRO-ABSORPTION MODULATOR (typical performance values)
Parameter
Typ.Value
Unit
Comments
Operation Wavelength
nm
GHz
GHz
dB
L-band version also available
at -1V bias
at -2V bias
50Gb/s, 1560nm
2.0Vpp drive voltage (single-ended)
at -1V bias
at -1V bias
Optical Insertion Loss
IL
~1560
>50
>50
-4.2
Dynamic Extinction Ratio
dER
3.0
dB
Diode Capacitance
Diode Series Resistance
Device Length
Cj
Rs
L
14
220
40
fF
Ohm
um
Electro-Optic Bandwidth (S21)
f3dB
Microscope image
50Gb/s, 2.0Vpp
Microscope image
50Gb/s, 2.0Vpp
50G SI RING MODULATOR (typical performance values)
Parameter
Typ.Value
Unit
Comments
Operation Wavelegnth
Quality Factor
nm
Q
Electro-Optic Bandwidth (S21)
f3dB
Static Transmitter Penalty
Diode Capacitance
Diode Series Resistance
Ring Radius
TP
Cj
Rs
R
~1550
2000-3500
~35
~47
10-11
20-30
~70
5
O-band version also available (40Gb/s)
Low Q - Medium Q
Medium Q (0V bias)
Low Q (0V bias)
Medium Q - Low Q (1.5Vpp drive swing)
GHz
GHz
dB
fF
Ohm
um
Opto-Electrical Bandwidth
C-band Responsivity
O-band Responsivity
Dark Current
f3dB
Id
Unit
Comments
GHz
A/W
A/W
nA
C-band
Type.Value
Unit
Comments
>25GHz
~1.0
~0.94
<50
GHz
A/W
A/W
nA
C-band
Statistics
Id
Parameter (type 2)
Typ.Value
>50GHz
~0.88
~0.85
<50
25Gb/s
f3dB
50Gb/s
Parameter (type 1)
Opto-Electrical Bandwidth
C-band Responsivity
O-band Responsivity
Dark Current
TEM image
50G GE PHOTODETECTOR (typical performance values)
Typ.Value
Unit
Comments
<2.0
<3.0
<1.0
<1.5
<4.5
dB/cm
dB/cm
dB/cm
dB/cm
nm
450nm wide
380nm wide
650nm wide
580nm wide
Fiber Grating Couplers
Type.Value
Unit
Comments
Insertion Loss
I dB Bandwidth
Peak-λ within-wafer control
2.5
29
<4
dB
nm
nm
C-band*, TE, SMF
C-band*, TE
Fiber Edge Couplers
Typ.Value
Unit
Comments
Insertion Loss
I dB Bandwidth
Polarization dependent loss
<2
>100
<0.5
dB
nm
dB
C-band*, Lensed Fiber
C-band*
C-band*
3σ
1σ
Edge Coupler
Single Mode Waveguides
Strip Waveguide C-band
Strip Waveguide O-band
Rib Waveguide C-band
Rib Waveguide O-band
Thickness Control
Grating Coupler
PASSIVES (typical performance values)
* O-band versions available in PDK
MOREINFORMATION
INFORMATION
MORE
kenneth.francken@imec.be
T +32 16 28 34 55
MPW Access:
Amit Khanna: epsiphot@imec.be
T +32 468 33 29 05
www.europractice-ic.com
MPW Access (USA):
Russ Pina: imec-sip@mosis.com
T +1 310 448 87 40
www.mosis.com
imec
Kapeldreef 75
3001 Leuven
Belgium
www.imec.be
DISCLAIMER. This information is provided ‘AS IS’, without any representation or warranty.
Imec is a registered trademark for the activities of imec International (a legal entity set up under Belgian law as a “stichting van openbaar nut”), imec Belgium (IMEC vzw, supported by the Flemish Government), imec the
Netherlands (Stichting IMEC Nederland, part of Holst Centre which is supported by the Dutch Government), imec Taiwan (IMEC Taiwan Co.), imec China (IMEC Microelectronics Shanghai Co. Ltd.), imec India (IMEC India
Private Limited) and imec USA (IMEC Inc).