RF2483 - RFMD.com

Transcription

RF2483 - RFMD.com

RF2483
RF2483Low
Noise DualBand Quadrature Modulator with AGC
LOW NOISE DUAL-BAND QUADRATURE
MODULATOR WITH AGC






RF OUT LB
GC
Mode
Control
&
Biasing
VCC2 2
*
15 GC DEC
Power
Control
14 VREF

ISIG P 3
13 QSIG P
ISIG N 4
12 QSIG N
+45°
-45°
EN 5
Applications
TDMA/GSM/EDGE Handsets
GSM/EDGE Handsets
W-CDMA Handsets
TDMA-Based Wireless Applications
Wireless Local Loop
Base Stations
GND2
VCC3 1
*

16
+45°
-45°
11 BAND SEL
6
7
8
9
10
GND1

17
LO HB

18
GND LO

19
LO LB

Dual-Band Operation 700
MHz to 2700MHz
-156dBm/Hz noise at
20MHz offset
+19dBm OIP3
+6dBm OP1dB
35dB Gain Control Range
Single 2.7V to 3.3V Supply
20
VCC1

*
RF OUT HB
Features
GND3
Package Style: QFN, 20-Pin, 4mmx4mm
*
*
Represents "GND".
Functional Block Diagram
Product Description
The RF2483 is a dual-band direct I/Q to RF modulator designed for handset applications where multiple modes of operation are required. ‘The
device provides common differential I/Q inputs and a common AGC amplifier. Independent single-ended LO inputs and single-ended high and low
band RF outputs are provided. The device achieves a very low out-of-band
noise density of -156dBm/Hz minimizing RF filtering. Operating from a
single 2.7V supply, the device is assembled in a 4mm x 4mm, 20-pin,
QFN package.
Ordering Information
RF2483SQ
RF2483SR
RF2483TR7
RF2483TR13
RF2483PCK-410
Sample Bag with 25 Pieces
7" Sample Reel with 100 Pieces
7" Reel with 750 Pieces
13" Reel with 2500 Pieces
2400MHz PCBA with 5-piece Sample Bag
Optimum Technology Matching® Applied
GaAs HBT
GaAs MESFET
InGaP HBT
SiGe BiCMOS
Si BiCMOS
SiGe HBT
GaAs pHEMT
Si CMOS
Si BJT
GaN HEMT
RF MICRO DEVICES®, RFMD®, Optimum Technology Matching®, Enabling Wireless Connectivity™, PowerStar®, POLARIS™ TOTAL RADIO™ and UltimateBlue™ are trademarks of RFMD, LLC. BLUETOOTH is a trademark owned by Bluetooth SIG, Inc., U.S.A. and licensed for use by RFMD. All other trade names, trademarks and registered trademarks are the property of their respective owners. ©2006, RF Micro Devices, Inc.
DS110505
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com.
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RF2483
Absolute Maximum Ratings
Parameter
Rating
Supply Voltage
Unit
-0.5 to 3.6
V
Storage Temperature
-40 to +150
°C
Operating Ambient Temperature
-40 to +85
°C
Input Voltage, any pin
-0.5 to 3.6
V
+10
dBm
Input Power, any pin
Caution! ESD sensitive device.
Exceeding any one or a combination of the Absolute Maximum Rating conditions may
cause permanent damage to the device. Extended application of Absolute Maximum
Rating conditions to the device may reduce device reliability. Specified typical performance or functional operation of the device under Absolute Maximum Rating conditions is not implied.
The information in this publication is believed to be accurate and reliable. However, no
responsibility is assumed by RF Micro Devices, Inc. ("RFMD") for its use, nor for any
infringement of patents, or other rights of third parties, resulting from its use. No
license is granted by implication or otherwise under any patent or patent rights of
RFMD. RFMD reserves the right to change component circuitry, recommended application circuitry and specifications at any time without prior notice.
RFMD Green: RoHS compliant per EU Directive 2002/95/EC, halogen free
per IEC 61249-2-21, < 1000ppm each of antimony trioxide in polymeric
materials and red phosphorus as a flame retardant, and <2% antimony in
solder.
Parameter
Specification
Min.
Typ.
Max.
Unit
Condition
Operating Range
Supply Voltage*
2.7
3.3
V
Temperature Range*
-40
+85
°C
High Band Frequency Range*
1700
2700
MHz
Bandsel =2.7V
Low Band Frequency Range*
700
1000
MHz
Bandsel =0V
110
mA
GC =2.0V, VCC =2.7V, EN =2.7V, Bandsel =2.7V,
DC Parameters
High Band Supply Current
65
85
IQ =1.2VDC, TA =25oC
Low Band Supply Current
65
85
110
mA
GC =2.0V, VCC =2.7V, EN =2.7V, Bandsel =0V,
IQ =1.2VDC, TA =25oC
Sleep Current
<1.0
10
A
EN=0V
Logic Levels
Input Logic Low
0
0.5
V
Input Logic High
1.4
VCC
V
Logic Pins Input Current*
A
<1.0
LO Input Port
High Band Frequency Range*
1700
2700
MHz
Bandsel=2.7V
Low Band Frequency Range*
700
1000
MHz
Bandsel=0V
High Band LO Input Power*
-3
0
6
dBm
Bandsel=2.7V
LO Band LO Input Power*
-3
0
6
dBm
Bandsel=0V
Input Impedance*
50

*=Not tested in production
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DS110505
RF2483
Specification
Min.
Typ.
Max.
Parameter
Unit
Condition
VCC =2.7V, EN=2.7V, Bandsel=2.7V, FLO=1900MHz,
PLO=0dBm, LO HB and RF OUT HB ports are matched
to 50. IQ=800mVP-P at 100kHz 1.2VDC. Input IQ signals driven differentially and in quadrature from a
50 source impedance. TA =25oC
I/Q Modulator High Band
(1700MHz to 2200MHz)
Baseband Input Voltage*
1.15
Baseband Input Level
1.2
1.25
0.8
Baseband Input Impedance*
Input Bandwidth*
50
Sideband Suppression
Carrier Suppression
V
Common mode voltage
VPP
Measured differentially
5.5
k
150
MHz
Measured at 100kHz
I/Q source impedance 50
30
43
dBc
GC=2.0V, no I/Q adjustment
30
43
dBc
30
42
dBc
30
40
dBc
30
37
dBc
30
35
dBc
20
23
dBc
20
22
dBc
40
47
dBc
GC=2.0V
40
47
dBc
GC=1.5V
40
54
dBc
GC=1.0V
40
46
dBc
GC=0.5V
3rd Harmonic of Modulation
Suppression at FLO-3x100kHz
Baseband Inputs DC Current Drain*
100
A
Baseband Inputs AC Current Drain*
100
APP
VCC =2.7V, EN=2.7V, Bandsel=0V, FLO=900MHz,
PLO=0dBm, LO LB and RF OUT LB ports are matched
I/Q Modulator Low Band
(700MHz to 1000MHz)
1.15
Input Bandwidth*
Carrier Suppression
1.2
0.8
50
1.25
V
Common mode voltage
VPP
5.5
k
150
MHz
Measured at 100kHz
30
41
dBc
30
43
dBc
30
42
dBc
30
40
dBc
35
48
dBc
35
45
dBc
30
40
dBc
25
33
dBc
DS110505
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RF2483
Specification
Min.
Typ.
Max.
Parameter
Unit
Condition
I/Q Modulator Low Band, cont.
40
57
dBc
GC=2.0V
40
57
dBc
GC=1.5V
40
60
dBc
GC=1.0V
40
52
dBc
GC=0.5V
100
A
100
APP
to 50. Input IQ signals driven differentially and in
quadrature from a 50 source impedance. TA =25oC
Variable Gain Amplifiers High
Band (1700MHz to 2200MHz)
Gain Control Voltage Range
0
Gain Control Range
32
35
Gain Control Slope
26
29
Gain Control Input Impedance*
2.0
33
10
Output Power
-3
0.4
V
dB
dB/V
Difference between output power at GC=2.0V and
GC=0.5V
Calculated GC=1.0V and 1.5V
k
3
dBm
GC=2.0V, IQ=800mVP-P at 100kHz
-8
-5
-2
dBm
-24
-20
-16
dBm
-35
-30
-38
Output Noise at FLO+20MHz*
dBm
-155
dBm/Hz
-156.7
dBm/Hz
Output P1dB*
+6
dBm
IQ at 100kHz
Output IP3*
+20
dBm
GC=2.0V. Extrapolated from IM3 with two baseband
tones at 90kHz applied differentially, in quadrature, at
both I and Q inputs, each tone 400mVP-P.
Intermodulation IM3 tone at
FLO+70kHz and FLO+130kHz
relative to tone at FLO+90kHz
GC=2.0V, IQ=0mVP-P
Two baseband tones at 90kHz and 110kHz applied
differentially, in quadrature, at both I and Q inputs,
each tone 400mVP-P.
40
50
dBc
GC=2.0V
40
50
dBc
GC=1.5V
40
50
dBc
GC=1.0V
40
47
dBc
GC=0.5V
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DS110505
RF2483
Specification
Min.
Typ.
Max.
Parameter
Unit
VCC =2.7V, EN=2.7V, Bandsel=0V, FLO=900MHz,
PLO=0dBm, LO LB and RF OUT LB ports are matched
to 50. Input IQ 1.2Vdc, signals driven differentially
and in quadrature from a 50 source impedance.
TA =25oC
Variable Gain Amplifiers Low
Band (700MHz to 1000MHz)
0
Gain Control Range
32
36
Gain Control Slope
26
29.5
2.0
V
dB
33
10
Output Power
Condition
dB/V
0.5V
Calculated using output power at GC=1.0V and 1.5V
k
-3
0.8
3
dB
-7.5
-4.5
-1.5
dB
-24
-21
-16
dB
-41
-35
-33
dB
-156.4
dBm/Hz
-157.2
dBm/Hz
GC=2.0V, IQ=0mVP-P
Output P1dB*
+6
dBm
IQ at 100kHz
Output IP3*
+19
dBm
tones at 90kHz and 110kHz applied differentially, in
quadrature, at both I and Q inputs, each tone 400mVPP.
Intermodulation IM3 tone at
FLO+70kHz and FLO+130kHz
relative to tone at FLO+90kHz
Two baseband tones at 90kHz and 110kHz applied at
40
50
dBc
GC=2.0V
40
50
dBc
GC=1.5V
40
50
dBc
GC=1.0V
40
50
dBc
GC=0.5V
DS110505
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RF2483
Specification
Min.
Typ.
Max.
Parameter
Unit
Condition
(2400MHz)
1.15
1.2
1.25
0.8
V
Common mode voltage
VPP
5.5
k
Input Bandwidth*
50
150
MHz
30
34
dBc
30
37
dBc
38
43
dBc
40
47
dBc
30
38
dBc
30
38
dBc
22
32
dBc
16
22
dBc
Carrier Suppression
Measured at 100kHz
50
58
dBc
GC=2.0V
50
58
dBc
GC=1.5V
50
59
dBc
GC=1.0V
50
62
dBc
GC=0.5V
100
A
100
APP
to 50. Input IQ signals driven differentially and in
quadrature from a 50 source impedance. TA =25oC
Band (2400MHz)
0
Gain Control Range
32
35
Gain Control Slope
26
29
Output Power
2.0
V
dB
33
10
dB/V
GC=0.5V
k
-3
0.4
3
dB
-10
-7
-3
dB
-22
-18
-14
dB
-39
-35
-30
dB
-155
dBm/Hz
-156.7
dBm/Hz
GC=2.0V, IQ=0mVP-P
Output P1dB*
+6
dBm
IQ at 100kHz
Output IP3*
+20
dBm
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DS110505
RF2483
Specification
Min.
Typ.
Max.
Parameter
Unit
Condition
PLO=0dBm, LO HB and RFOUT HB ports are matched
to 50 IQ=800mVP-P at 100KhZ 1.2VDC. Input IQ signals driven differentally and in quadrature from a 50
source impedance. TA =25°C
(2700MHz)
1.2
V
Common mode voltage
Baseband Input Level*
0.8
VPP
5.5
k
Input Bandwidth*
150
MHz
Sideband Suppression*
34
dBc
37
dBc
43
dBc
47
dBc
Carrier Suppression*
Measured at 100kHz
38
dBc
38
dBc
32
dBc
22
dBc
Suppression at FLO-3x100kHz*
58
dBc
GC=2.0V
58
dBc
GC=1.5V
59
dBc
GC=1.0V
dBc
GC=0.5V
62
Baseband Input DC Current Drain*
100
A
Baseband Input AC Current Drain*
100
APP
PLO=0dBm, LO HB and RFOUT HB ports are matched
to 50 IQ=800mVP-P at 100KhZ 1.2VDC. Input IQ signals driven differentally and in quadrature from a 50
source impedance. TA =25°C
Band (2700MHz)
Gain Control Voltage Range*
0
2.0
V
Gain Control Range*
35
dB
Gain Control Slope*
29
dB/V
10
k
Output Power*
0.4
dB
-7
dB
-18
dB
Output Noise at FLO + 20MHz*
GC=0.5V
-35
dB
-155
dBm/Hz
-156.7
dBm/Hz
Output P1dB*
+6
dBm
IQ at 100kHz
GC=2.0V, IQ=0mVP-P
Output IP3*
+20
dBm
both I and Q inputs, each tone 400mVP-P
DS110505
7 of 34
RF2483
Mode Truth Table
8 of 34
Mode
ENABLE
BAND SEL
Condition
Sleep
0
X
I/Q and GC inputs go open circuit through the
use of a FET switch in sleep mode
High Band Mode
1
1
LO input LO HB
RF output = RF OUT HB
Low Band Mode
1
0
LO input LO LB
RF output = RF OUT LB
DS110505
RF2483
Pin Names and Descriptions
Pin
1
Function
VCC3
Description
Interface Schematic
Supply for RF output circuits.
VCC3
RF Output
Amplifier
2
VCC2
Supply for modulator and biasing circuits.
VCC2
VCC2
Modulator and
VGA
3
4
ISIG P
ISIG N
In phase I channel positive baseband input port. Best performance is
achieved when the ISIGP and ISIGN are driven differentially. The recommended CW differential drive level (VISIGP -VISIGN) is 800mVP-P.
This input should be DC-biased at 1.2V±0.05V. The common-mode DC
coltage on the ISIGP and ISIGN input signals is used to bias the modulator.
In sleep mode an internal FET switch is opened, the input goes high impedance and the modulator is de-biased. The input impedance is typically
5.5k at low frequencies and at higher frequencies can be modeled as
50 in series with 12pF to ground.
Phase or amplitude errors between the ISIGP and ISIGN signals may result
in the even order distortion of the modulation in the output spectrum.
DC offsets between the ISIGP and ISIGN signals will result in increased carrier leakage. Small DC offsets may be deliberately applied between the
ISIGP/ISIGN and QSIGP/QSIGN inputs to cancel out LO leakage. The optimum corrective DC offsets will change with mode, frequency and gain control.
Common-mode noise on the ISIGP and ISGN should be kept low as it may
degrade the noise performance of the modulator.
Phase offsets may be applied between the I and Q channels to improve the
sideband suppression performance.
In phase I channel negative baseband input port. See ISIGP.
V CC2
50 
12 pF
V CC2
50 
12 pF
5
ENABLE
6
VCC1
Enables power to the device.
CMOS input.
Logic 1 (1.4V to VCC)=Enabled.
Logic 0 (0V to 0.5V)=Powered Down.
Supply for the LO buffers and quadrature network.
The sideband suppression is a function of the VCC1 voltage. The inclusion
of R3 (39) lowers the voltage on VCC1 by around 400mV and results an
improvement in sideband suppression but around a 0.2dB increase in
noise at 20MHz offset.
V
C C 2
VCC1
LO Quadrature
Generator and
Buffers
GND1
DS110505
9 of 34
RF2483
Pin
7
Function
LOLB
8
GND LO
9
LOHB
10
11
GND1
BAND SEL
12
QSIG N
Description
Interface Schematic
Local oscillator input low band.
LO LB
This input is biased internally at around 1.6V when the chip is in low band
mode and 0V when the chip is in high band mode or powered down. The
LO signal typically needs to be AC coupled.
The noise performance, carrier suppression at low output powers and sideband suppression are all a function of LO power.
The optimum LO power is between 0dBm and 3dBm.
G N D LO
The device will work with LO powers as low as -20dBm however this is at
the expense of higher noise performance at high output powers and poorer
sideband suppression.
Ground return for the local oscillator input signals.
See pins 7 and 9.
The GND LO pin is effectively the complementary LO input for both the high
band and low band LO signals. It has significant amounts of LO signal flowing through it. This pin is brought out as an independent ground to enable
the PCB board designer to isolate the LO return from the RF outputs
ground and the general chip ground.
It is recommended that this ground is kept isolated from the die flag
ground. Any connections between the GND LO and any other ground
should be made through a ground plane.
Local oscillator input high band.
LO H B
This input is biased internally at around 1.6V when the chip is in high band
mode and 0V when the chip is in low band mode or powered down. The LO
HB signal typically needs to be AC coupled.
The noise performance, carrier suppression at low output powers and sideband suppression are all a function of LO power.
The optimum LO power is between 0dBm and 3dBm.
G N D LO
The device will work with LO powers as low as -20dBm however this is at
the expense of higher noise performance at high output powers and poorer
sideband suppression.
Ground for LO buffers.
See pin 6.
Band select input to define active mode.
CMOS input.
Logic 1 (1.4V to VCC)=High band mode.
Logic 2 (0V to 0.5V)=Low band mode.
Quadrature channel negative baseband input port. See QSIGP.
V
C C 2
V CC2
50 
12 pF
10 of 34
DS110505
RF2483
Pin
13
14
15
16
Function
QSIG P
VREF
GC DEC
GC
Description
Interface Schematic
Quadrature Q channel positive baseband input port.
Best performance is achieved when the ISIGP and ISIGN are driven differentially. The recommended CW differential drive level (VQSIGP -VQSIGN) is
800mVP-P.
This input should be DC-biased at 1.2V±0.05V. The common-mode DC
voltage on the QSIGP and QSIGN input signals is used to bias the modulator. In sleep mode an internal FET switch is opened, the input goes high
impedance and the modulator is de-biased. The input impedance is typically 5.5k at low frequencies and at higher frequencies can be modeled
as 50 in series with 12pF to ground.
Phase or amplitude errors between the QSIGP and QSIGN signals which
may result in an increase in the even order distortion of the modulation in
the output spectrum.
DC offsets between the QSIGP and QSIGN signals will result in an
increased carrier leakage. Small DC offsets may be deliberately applied
between the ISIGP/ISIGN and QSIGP/QSIGN inputs to cancel out the LO
leakage. The optimum corrective DC offsets will change with mode, frequency and gain control.
Common-mode noise on the QSIGP and QSIGN should be kept low as it
may degrade the noise performance of the modulator.
Phase offsets may be applied between the I and Q channels to improve the
sideband suppression performance.
Voltage reference decouple with an external 10nF capacitor to ground.
The voltage on this pin is typically 1.67V when the chip is enabled. The
voltage is 0V when the chip is powered down.
The purpose of this decoupling capacitor is to filter out low frequency noise
(20MHz) on the gain control lines.
Poor positioning of the VREF decoupling capacitor can cause a degradation in LO leakage.
A voltage of around 2.5V on this pin indicates that the die flag under the
chip is not grounded and the chip is not biased correctly.
Voltage reference decouple with an external 1nF decoupling capacitor to
ground.
The voltage on this pin is a function of gain control (GC) voltage when the
chip is enabled. The voltage is 0V when the chip is powered down.
The purpose of this decoupling capacitor is to filter out low frequency noise
(20MHz) on the gain control lines. The size of the capacitor on the GC DEC
line will effect the settling time response to a change in gain control voltage. A 1nF capacitor equates to around 200ns settling time and a 0.5nF
capacitor equates to a 100ns settling time. There is a trade-off between
settling time and noise contributions by the gain control circuitry as gain
control is applied.
Poor positioning of the VREF decoupling capacitor can cause a degradation in LO leakage.
Gain control voltage. Maximum output power at 2.0V. Minimum output
power at 0V. When the chip is enabled the input impedance is 10k referenced to 1.7VDC. When the chip is powered down a FET switch is opened
and the input goes high impedance.
V CC2
50 
12 pF
4 k
V CC2
+
4 k
V CC2
+
-
V CC2
4 k
10 k
-
1.7 V +
17
RF OUT LB
18
GND2
DS110505
RF low band output. Open collector output.
The output should be biased at VCC through an inductor that can be used
to form part of an output matching circuit.
In our proposed applications circuit some power is dissipated in R6 (130)
which appears as a de-Qing resistor in parallel with the output inductor L4.
If R6 is eliminated and the RFOUT LB pin is re-matched to 50 it is possible to get approximately 5dB extra power out of the device in low band
mode.
Ground for RF output sections.
11 of 34
RF2483
Pin
19
Function
RF OUT HB
20
Die
Flag
GND3
GND4
Description
Interface Schematic
RF high band output. Open collector output.
The output should be biased at VCC through an inductor that can be used
to form part of an output matching circuit.
In our proposed applications circuit some power is dissipated in R4 (180)
which appears as a de-Qing resistor in parallel with the output inductor L3.
If R4 is eliminated and the RFOUT HB pin is re-matched to 50 it is possible to get approximately 3dB extra power out of the device in high band
mode.
Ground for RF output sections.
Ground for modulator, variable gain amplifier and substrate.
Package Drawing
-A-
0.10 C A
4.00 SQ.
0.05 C
0.90
0.85
2 PLCS
2.00 TYP
0.10 C B
0.70
0.65
0.05
0.00
2 PLCS
12°
MAX
0.10 C B
2 PLCS
-B-
SEATING
PLANE
1.87 TYP
-C-
3.75 SQ.
0.10 C A
Dimensions in mm.
2 PLCS
0.10 M C A B
NOTES:
1. Shaded lead is Pin 1.
2 Dimension applies to plated terminal:
to be measured between 0.20 mm and 0.25 mm
from terminal end.
0.60
0.24
TYP
0.30
0.18
2
PIN 1
ID
0.20 R
2.25
SQ.
1.95
0.75
0.50
TYP
0.50
12 of 34
DS110505
RF2483
Application Notes
The baseband inputs must be driven with balanced differential signals. We suggest amplitude and phase matching <0.5dB
and <0.5°. Phase or gain imbalances between the complementary input signals will cause additional distortion including
some second order baseband distortion.
The common-mode voltage on the baseband inputs should be well controlled at 1.2V. We suggest that the common-mode DC
voltage be 1.2V+0.05V. The common-mode DC voltage is used to bias the modulator; hence, deviations from 1.2V will result
in changes in the current consumption, noise and intermodulation performance.
The chip is designed to be driven with a single-ended LO signal.
The GC DEC and VREF output pins should be decoupled to ground. We recommend a 10nF capacitor on VREF, and a 1nF
capacitor on GC DEC. The purpose of this capacitor is to filter out low frequency noise (20MHz) in the gain control lines, which
may cause noise on the RF signal. The capacitor on the GC DEC line will effect the settling time response to a change in power
control voltage. A 1nF capacitor equates to around a 200ns settling time, and a 0.5nF capacitor equates to a 100ns settling
time. There is a trade-off between settling time and phase noise as you start to apply gain control.
The ground lines for the LO sections, GNDLO and GND1, are brought out of the chip independently from the ground to the RF
and modulator sections. This isolates the LO signals from the RF output sections.
The GND LO pin is effectively the complementary LO input for both the high band and low band LO signals. It has significant
amounts of LO signal flowing through it. This is brought out as an independent ground to try to enable the PCB board designer
to isolate the LO return from the RF output sections and general chip ground.
The RF output ports of the RF2483 consist of open collector architecture and require pull up inductors to the supply voltage.
This, in conjunction with a DC blocking capacitor provides a simple, broadband L-match network as shown in the schematic
diagram. A shunt resistor is included to control the Q of the matching network and set the modulator output power. In this case,
both outputs were designed to provide 0dBm.
An alternate output match containing a third harmonic trap was evaluated. This circuit uses a tapped-C matching network,
whereby the shunt C provides a low impedance path near the third harmonic frequency. Although an additional component is
required, the benefit of suppressing the third harmonic distortion may improve overall system intermodulation. This network
has been shown to provide better than 20dB of improved suppression in high-band mode.
VCC
C4
100 pF
L3
2.2 nH
R4
180 
C11
2 pF
J4
RFOUT HB
C12
1 pF
C15
6 pF
L4
10 nH
R6
130 
J8
RFOUT LB
C13
2 pF
C6
100 pF
VCC
Figure 1. Alternate RF output match with third-harmonic suppression.
DS110505
13 of 34
RF2483
High Band LOHB (S11) and RFHB (S22) Parameters
(VCC =2.7V, VGC =2.0V, Band Sel=2.7V, EN=2.7V, T=+25°C)
Freq. (MHz)
S11 MAG
S11 ANG
S22 MAG
S22 ANG
1700
0.478
-110.8
0.903
-55.0
-56.2
1750
0.469
-112.4
0.901
1800
0.465
-115.1
0.902
-57.2
1850
0.472
-117.2
0.902
-58.0
1900
0.476
-117.6
0.904
-59.0
1950
0.465
-118.4
0.905
-59.6
2000
0.457
-120.8
0.906
-60.3
2050
0.452
-122.6
0.909
-60.9
2100
0.464
-123.0
0.916
-61.9
2150
0.453
-123.4
0.914
-64.0
2200
0.442
-125.4
0.879
-64.5
Low Band LOLB (S11) and RFLB (S22) Parameters
(VCC =2.7V, VGC =2.0V, Band Sel=0V, EN=2.7V, T=+25°C
)
14 of 34
Freq. (MHz)
S11 MAG
S11 ANG
S22 MAG
S22 ANG
700
0.468
-63.2
0.92
-9.9
750
0.452
-67.6
0.915
-11.3
800
0.437
-72.1
0.913
-12.6
850
0.425
-76.6
0.908
-14.0
900
0.414
-81.2
0.905
-15.6
950
0.407
-85.6
0.901
-17.1
1000
0.402
-89.8
0.898
-18.8
DS110505
RF2483
Evaluation Board Schematic
(700MHz to 1000MHz Low Band)
(1700MHz to 2200MHz High Band)
J4
RF OUT HB
J8
RF OUT LB
C13*
DNI
C12*
DNI
C15
1.5 pF
C6
100 pF
R6
180 
VCC
C11
1 pF
C4
100 pF
L4
12 nH
R4
220 
R5
100 
P1
VCC
GC
P1-1
C10
1 nF
L3
3.3 nH
2
P1-3
*
VCC
20
*
C8
1 nF
19
18
17
16
1
J1
I+
*
15
2
14
3
13
C9
1 nF
CON3
C14
10 nF
P2
J7
Q-
J2
I-
4
12
J6
Q+
EN
5
11
BAND SEL
*
6
7
8
9
10
EN
GC
GND
+ C1
1 uF
BAND SEL
3
CON3
+ C2
1 uF
R2
1M
1
2
P2-3
GND
3
Represents "GND".
P2-1
VCC
1
R1
1M
*
2483400A
C7
1 nF
Note: Parts with * following the reference designator
should not be populated on the evaluation board.
R3
0
L1
6.8 nH
C5
10 pF
C3
100 pF
L2
3.3 nH
J3
LO LB
J5
LO HB
VCC
DS110505
15 of 34
RF2483
(2400MHz - High Band Tune Only)
J4
RF OUT HB
J8
RF OUT LB
C13
NC
C12
NC
C15
1.5 pF
R6
180 Ω
C11
1.2 pF
C4
100 pF
VCC
L4
12 nH
R4
220 Ω
VCC
C6
100 pF
R5
100 Ω
P1
GC
P1-1
C10
1 nF
L3
1.8 nH
2
P1-3
*
C8
1 nF
*
20
19
18
17
16
1
J1
I+
*
15
2
14
3
13
CON3
C9
1 nF
P2-1
J7
Q-
4
12
J6
Q+
EN
5
11
BAND SEL
6
7
8
9
10
EN
P2-3
GC
1
2
GND
+ C1
1 uF
BAND SEL
3
CON3
+ C2
1 uF
R2
1M
P2
C14
10 nF
J2
I-
*
GND
3
Represents "GND".
VCC
VCC
1
R1
1M
*
2483400-
C7
1 nF
R3
0Ω
L1
6.8 nH
C3
100 pF
L2
3.3 nH
C5
1 pF
C16
100 pF
J3
LO LB
J5
LO HB
VCC
16 of 34
DS110505
RF2483
(2700MHz - High Band Tune Only)
J4
RF OUT HB
J8
RF OUT LB
C13
NC
C12
NC
C15
1.5 pF
R6
180 Ω
C11
1.2 pF
C4
100 pF
VCC
L4
12 nH
R4
220 Ω
VCC
C6
100 pF
R5
100 Ω
P1
GC
P1-1
C10
1 nF
L3
1 nH
2
P1-3
*
C8
1 nF
*
20
19
18
17
16
1
J1
I+
*
15
2
14
3
13
CON3
C9
1 nF
P2-1
J7
Q-
4
12
J6
Q+
EN
5
11
BAND SEL
6
7
8
9
10
EN
P2-3
GC
1
2
GND
+ C1
1 uF
BAND SEL
3
CON3
+ C2
1 uF
R2
1M
P2
C14
10 nF
J2
I-
*
GND
3
Represents "GND".
VCC
VCC
1
R1
1M
*
2483400-
C7
1 nF
R3
0Ω
L1
6.8 nH
C3
100 pF
L2
1.8 nH
C5
1 pF
C16
100 pF
J3
LO LB
J5
LO HB
VCC
DS110505
17 of 34
RF2483
Evaluation Board Build of Materials (BOM)
(700MHz to 1000MHz Low Band)
(1700MHz to 2200MHz High Band)
Description
Reference Designator
PCB, 2483
RES, 1M, 5%, 1/16W, 0402
Manufacturer
Manufacturer’s P/N
DYNAMIC DETAILS CANADA, INC.
RF2483410(B)
U1
RFMD
RF2483SB
R1, R2
PANASONIC INDUSTRIAL CO
ERJ-2GEJ105
ERJ-2GE0R00
RES, 0, 0402
R3
RES, 100, 5%, 1/16W, 0402
R5
ERJ-2GEJ101
RES, 180, 5%, 1/16W, 0402
R6
ERJ-2GEJ181
RES, 220, 5%, 1/16W, 0402
R4
ERJ-2GEJ221
ECJ-0EB1E102K
CAP, 1000pF, 10%, 25V, X7R, 0402
C7, C8, C9, C10
CAP, 1pF, +/-0.25pF, 50V, C0G, 0402
C11
ECJ-0EC1H010C
CAP, 1.5pF, +/-0.25pF, 50V, C0G, 0402
C15
ECJ-0EC1H1R5C
CAP, 10000pF, 10%, 16V, X7R, 0402
C14
ECJ-0EB1C103K
CAP, 10pF, +/-0.5pF, 50V, C0G, 0402
C5
ECJ-0EC1H100D
CAP, 100pF, 5%, 50V, C0G, 0402
C3, C4, C6
ECJ-0EC1H101J
CAP, 1uF, 20%, 25V, TANT-A
C1, C2
AVX Corporation
TAJA105M025R
IND, 3.3nH, +/-0.3nH, M/L, 0402
L2, L3
Taiyo Yuden (USA), Inc.
LG HK10053N3S-T
IND, 6.8nH, 5%, M/L, 0402
L1
LG HK10056N8J-T
LG HK100512NJ-T
IND, 12nH, 5%, M/L, 0402
L4
NOT POPULATED ITEM-1 FOR PCBA BOM
C12*, C13*
CONN, HDR, ST, PLRZD, 3-PIN, 0.100"
P1, P2
ITW Pancon
MPSS100-3-C
CONN, SMA END LNCH, MINI, RND, 0.062"
J1, J2, J3, J4, J5, J6, J7, J8
JOHNSON COMPONENTS, INC.
142-0711-821
DUMMY PART
Notes:
1. Parts with * following the Reference Designator should not be populated on PCBA.
2. RFMD devices (DUT) may require baking per IPC/JEDEC J-STD-020 for a minimum of 24 hours at 125 +5/-0 deg C. Assembly must take place within 12 hours of bake completion.
3. Manufacturers' P/Ns are subject to change by the manufacturers following the issue of this document and are thereby
included for reference only. Contact RFMD Corporate Engineering Materials with questions regarding specific Manufacturers' P/Ns.
18 of 34
DS110505
RF2483
Evaluation Board Assembly Layout
(Board Size 2.0” x 2.0”)
Board Thickness 0.062”, Board Material FR-4, Multi-Layer
DS110505
Top
Inner 1
Inner 2
Back
19 of 34
RF2483
20 of 34
DS110505
RF2483
Typical Performance: 1700MHz to 2200MHz Application Circuit
High Band Modulator Performance versus Frequency
High Band Modulator Performance versus LO Power
LO=0dBm, VCC=2.7V, GC=2V, IQ=100kHz 800mVP-P
LO=1900MHz, VCC=2.7V, GC=2V, IQ=100kHz 800mVP-P
0.0
0.0
0.0
0.0
Carrier Suppression
-20.0
-30.0
-30.0
-40.0
-50.0
-60.0
1700.0
1800.0
1900.0
2000.0
Frequency (MHz)
Output Power
-20.0
-30.0
-40.0
-40.0
-40.0
-50.0
-50.0
-50.0
-60.0
-10.0
-60.0
-8.0
-6.0
-4.0
-2.0
0.0
LO Power (dBm)
2.0
4.0
6.0
8.0
High Band Output Power versus Baseband Signal Level
High Band Output Noise 20MHz Offset versus LO Power
VCC=2.7V, LO=1900MHz 0dBm, IQ=100kHz 1.2VDC
VCC=2.7V, LO=1900MHz, GC=2V
-152.0
-20.0
-30.0
-60.0
2200.0
2100.0
-10.0
Sideband Suppression (dBc)
3rd Harmonic (dBc)
Output Power
-20.0
-10.0
Output Power (dBm)
Carrier Suppression (dBc)
-10.0
3rd Harmonic (dBc)
-10.0
Output Power (dBm)
Carrier Suppression
20.0
1.0
10.0
0.0
Output Noise 20MHz Offset,
I&Q = 800mVpp 1.2Vdc
I&Q = 0 mVpp 1.2Vdc
-1.0
Output Power
-155.0
-2.0
-156.0
-3.0
-157.0
-4.0
Output Power (dBm)
-154.0
0.0
-10.0
Output Power (dBm)
Output Noise (dBm/Hz)
-153.0
-20.0
-30.0
-40.0
-50.0
GC = 2.0V
-60.0
GC = 1.5V
GC = 1.0V
-70.0
-10.0
-8.0
-6.0
-4.0
-2.0
0.0
2.0
4.0
6.0
GC = 0.5V
-80.0
-5.0
-158.0
10.0
8.0
100.0
VCC=2.7V, LO=0dBm, IQ=900kHz and 1100kHz at 1.2VDC
30.00
5.0
-130.0
0.0
20.00
I&Q = 0mVpp 1.2Vdc
-5.0
-145.0
-10.0
-150.0
-15.0
-155.0
-20.0
-160.0
-25.0
10.00
OIP3 (dBm)
Output Power
I&Q=800mVpp 1.2Vdc
Output Power (dBm)
-140.0
10000.0
High Band Output IP3 versus Gain Control
High Band Output Noise 20MHz Offset versus Gain Control
-135.0
1000.0
Baseband Signal Level (mVpp)
LO Power (dBm)
0.00
-10.00
1700MHz
1800MHz
-20.00
1900MHz
-30.0
-165.0
-35.0
-170.0
0.0
DS110505
0.5
1.0
1.5
Gain Control (V)
2.0
2.5
2000MHz
-30.00
0.0
0.5
1.0
Gain Control (V)
1.5
2.0
2.5
21 of 34
RF2483
High Band Output Power versus Gain Control
LO=1900MHz 0dBm, IQ=100kHz 800mVP-P 1.2VDC
5.0
0.00
0.0
-5.00
-5.0
-10.00
-10.0
Output Power (dBm)
Output Power (dBm)
5.00
-15.00
-20.00
-25.00
-15.0
-20.0
-25.0
Vcc = 2.7V
-30.00
-30.0
Temp = -40°C, Vcc=2.7V
Vcc = 3.0V
-35.00
Temp = +25 °C, Vcc=2.7V
-35.0
Vcc = 3.3V
-40.00
Temp = +85 °C, Vcc=2.7V
-40.0
0.0
0.5
1.0
1.5
Gain Control (V)
2.0
2.5
0.0
0.5
1.0
1.5
2.0
High Band Carrier Suppression versus Gain Control
VCC=2.7V, LO=0dBm, IQ=100kHz 800mVP-P 1.2VDC
5.0
0.0
1700MHz
0.0
1800MHz
-10.0
1900MHz
-5.0
2000MHz
-10.0
Output Power (dBm)
2.5
Gain Control (V)
-15.0
-20.0
-25.0
-20.0
-30.0
-40.0
1700MHz
-30.0
1800MHz
-50.0
1900MHz
-35.0
2000MHz
-40.0
-60.0
0.0
0.5
1.0
1.5
Gain Control (V)
2.0
2.5
0.0
High Band Sideband Suppression versus Gain Control
0.5
1.0
1.5
Gain Control (V)
2.0
2.5
High Band Modulation's 3rd Harmonic versus Gain Control
0.0
0.0
1700MHz
3rd Harmonic of Modulation Suppression (dBc)
1800MHz
-10.0
1900MHz
2000MHz
-20.0
-30.0
-40.0
-50.0
-60.0
1700MHz
1800MHz
1900MHz
-20.0
2000MHz
-30.0
-40.0
-50.0
-60.0
0.0
0.5
1.0
1.5
Gain Control (V)
22 of 34
-10.0
2.0
2.5
0.0
0.5
1.0
1.5
Gain Control (V)
2.0
2.5
DS110505
RF2483
0.0
0.0
Temp = +25 °C, Vcc=2.7V
Temp = +25 °C, Vcc=2.7V
-10.0
Temp = +85 °C, Vcc=2.7V
Temp = +85 °C, Vcc=2.7V
-10.0
-20.0
-30.0
-40.0
-50.0
-20.0
-30.0
-40.0
-50.0
-60.0
-60.0
0.0
0.5
1.0
1.5
Gain Control (V)
2.0
2.5
0.0
1.5
2.0
2.5
0.00
Vcc=2.7V
Vcc=2.7V
Vcc=3.0V
Vcc=3.0V
-10.00
-10.00
Vcc=3.3V
Vcc=3.3V
1.0
Gain Control (V)
0.00
-20.00
-30.00
-40.00
-50.00
-20.00
-30.00
-40.00
-50.00
-60.00
-60.00
0.0
0.5
1.0
1.5
Gain Control (V)
2.0
2.5
0.0
0.5
1.0
1.5
Gain Control (V)
2.0
2.5
High Band Output IP3 versus Gain Control
LO=1900MHz 0dBm, IQ=100kHz 800mVp-p 1.2VDC
LO=1900MHz 0dBm, IQ=900kHz and 1100kHz at 1.2VDC
0.00
25.0
Vcc=3.0V
Vcc=3.0V
-10.00
Vcc=2.7V
20.0
Vcc=2.7V
15.0
Vcc=3.3V
Vcc=3.3V
10.0
-20.00
Output IP3 (dBm)
0.5
-30.00
5.0
0.0
-5.0
-10.0
-40.00
-15.0
-20.0
-50.00
-25.0
-60.00
-30.0
0.0
DS110505
0.5
1.0
1.5
Gain Control (V)
2.0
2.5
0.0
0.5
1.0
1.5
Gain Control (V)
2.0
2.5
23 of 34
RF2483
Low Band Modulator Performance versus Frequency
Low Band Modulator Performance versus LO Power
0.00
0.00
0.00
Carrier Suppression
Output Power
-20.00
-20.00
-40.00
-50.00
-50.00
-50.00
-60.00
-60.00
-60.00
-70.00
1200.0
-70.00
-40.00
-50.00
-60.00
1100.0
-20.00
Output Power
-40.00
-40.00
900.0
1000.0
Frequency (MHz)
-20.00
-30.00
-30.00
800.0
-30.00
-30.00
-70.00
700.0
-70.00
-10.0
-8.0
-6.0
2.0
4.0
6.0
8.0
20.0
1.0
10.0
0.0
0.0
I&Q = 0 mVpp 1.2Vdc
-1.0
-155.00
-2.0
-156.00
-3.0
Output Power (dBm)
-10.0
Output Power
I&Q=800mVpp 1.2Vdc
Output Power (dBm)
-2.0
0.0
LO Power (dBm)
VCC=2.7V, LO=900MHz, IQ=100kHz 1.2VDC
-154.00
-4.0
Low Band Output Power versus Baseband Signal Level
Low Band Output Noise 20MHz Offset versus LO Power
-152.00
-153.00
-10.00
Output Power (dBm)
Output Power (dBm)
Carrier Suppression
-10.00
-10.00
3rd Harmonic (dBc)
-10.00
3rd Harmonic (dBc)
0.00
-20.0
-30.0
-40.0
-50.0
GC = 2.0V
-60.0
-4.0
-157.00
GC = 1.5V
GC = 1.0V
-70.0
GC = 0.5V
-80.0
-5.0
-158.00
-10.0
-8.0
-6.0
-4.0
-2.0
0.0
LO Power (dBm)
2.0
4.0
6.0
10.0
8.0
VCC=2.7V, LO=0dBm, IQ=900kHz and 1100kHz at 1.2VDC
VCC=2.7V, LO=900MHz 0dBm
30.00
5.0
-130.0
700MHz
0.0
20.00
-5.0
10.00
800MHz
900MHz
I&Q = 0 mVpp 1.2Vdc
-145.0
-10.0
-150.0
-15.0
-155.0
-20.0
-160.0
-25.0
-165.0
-30.0
OIP3 (dBm)
1000MHz
Output Power
I&Q=800mVpp 1.2Vdc
Output Power (dBm)
-140.0
10000.0
Low Band Output IP3 versus Gain Control
Low Band Output Noise at 20MHz Offset versus GC
-135.0
100.0
1000.0
Baseband Signal Level (mVpp)
0.00
-10.00
-20.00
-30.00
-35.0
-170.0
0.0
24 of 34
0.5
1.0
1.5
Gain Control (V)
2.0
2.5
-40.00
0.0
0.5
1.0
1.5
2.0
2.5
Gain Control (V)
DS110505
RF2483
Low Band Output Power versus Gain Control
5.00
5.00
0.00
0.00
-5.00
-5.00
-10.00
Output Power (dBm)
Output Power (dBm)
-10.00
-15.00
-20.00
-25.00
-15.00
-20.00
-25.00
-30.00
-30.00
-35.00
-35.00
Vcc=2.7V
Temp = +25 °C, Vcc=2.7V
Vcc=3.0V
-40.00
-40.00
Temp = +85 °C, Vcc=2.7V
Vcc=3.3V
-45.00
-45.00
0.0
0.5
1.0
1.5
Gain Control (V)
2.0
0.0
2.5
0.5
1.0
1.5
Gain Control (V)
2.0
2.5
Low Band Carrier Suppression versus Gain Control
0.0
5.0
700MHz
0.0
800MHz
-10.0
900MHz
1000MHz
Output Power (dBm)
-5.0
-10.0
-15.0
-20.0
-25.0
-20.0
-30.0
-40.0
-30.0
700MHz
-35.0
-50.0
800MHz
900MHz
-40.0
1000MHz
-60.0
-45.0
0.0
0.5
1.0
1.5
Gain Control (V)
2.0
0.0
2.5
1.0
1.5
2.0
2.5
Gain Control (V)
Low Band Modulation's 3rd Harmonic versus Gain Control
Low Band Sideband Suppression versus Gain Control
0.0
0.5
0.0
700MHz
700MHz
900MHz
1000MHz
800MHz
-10.0
800MHz
-10.0
-20.0
-30.0
-40.0
-50.0
900MHz
1000MHz
-20.0
-30.0
-40.0
-50.0
-60.0
-70.0
-60.0
-80.0
0.0
DS110505
0.5
1.0
1.5
Gain Control (V)
2.0
2.5
0.0
0.5
1.0
1.5
Gain Control (V)
2.0
2.5
25 of 34
RF2483
Low Band Sideband Supperssion versus Gain Control
0.00
0.00
Temp = +25 °C, Vcc=2.7V
-10.00
-10.00
Temp = +25 °C, Vcc=2.7V
Temp = +85 °C, Vcc=2.7V
-20.00
-30.00
-40.00
Temp = +85 °C, Vcc=2.7V
-20.00
-30.00
-40.00
-50.00
-50.00
-60.00
-60.00
-70.00
0.0
0.5
1.0
1.5
Gain Control (V)
2.0
2.5
0.0
1.0
1.5
Gain Control (V)
2.0
2.5
Low Band Sideband Suppression versus Gain Control
0.00
0.00
Vcc=2.7V
Vcc=2.7V
Vcc=3.0V
-10.00
Vcc=3.0V
-10.00
Vcc=3.3V
Vcc=3.3V
0.5
-20.00
-30.00
-40.00
-20.00
-30.00
-40.00
-50.00
-50.00
-60.00
-60.00
-70.00
0.0
0.5
1.0
1.5
Gain Control (V)
2.0
2.5
0.0
Low Band Modulation's 3rd Harmonic versus Gain Control
0.5
1.0
Gain Control (V)
1.5
2.0
2.5
Low Band Output IP3 versus Gain Control
LO=900MHz 0dBm, IQ=900kHz and 1100kHz at 1.2VDC
0.00
30.0
Vcc=3.0V
20.0
Vcc=3.3V
-20.00
10.0
OIP3 (dBm)
Vcc=2.7V
-10.00
-30.00
-40.00
0.0
-10.0
-50.00
-20.0
-60.00
-30.0
-70.00
-40.0
Vcc=2.7V
Vcc=3.0V
Vcc=3.3V
0.0
26 of 34
0.5
1.0
1.5
Gain Control (V)
2.0
2.5
0.0
0.5
1.0
1.5
Gain Control (V)
2.0
2.5
DS110505
RF2483
Typical Performance: 700MHz to 1000MHz Application Circuit for Low Band;
1700MHz to 2200MHz Application Circuit for High Band
Low Band Current Consumption versus Gain Control
High Band Current Consumption versus Gain Control
160.00
140.0
140.00
120.0
120.00
100.0
100.00
Current (mA)
Current (mA)
160.0
80.0
60.0
80.00
60.00
40.0
40.00
Temp = +25 °C, Vcc=2.7V
Temp = +25 °C, Vcc=2.7V
Temp = +85 °C, Vcc=2.7V
20.0
20.00
Temp = +85 °C, Vcc=2.7V
0.0
0.00
0.0
0.5
1.0
1.5
Gain Control (V)
2.0
2.5
0.0
1.0
1.5
Gain Control (V)
2.0
160.0
140.0
140.0
120.0
120.0
100.0
100.0
Current (mA)
160.0
80.0
80.0
60.0
60.0
Vcc=2.7V
40.0
Vcc=2.7V
40.0
Vcc=3.0V
Vcc=3.0V
20.0
Vcc=3.3V
20.0
Vcc=3.3V
0.0
0.0
0.0
0.5
1.0
1.5
Gain Control (V)
2.0
0.0
2.5
0.5
1.0
1.5
Gain Control (V)
2.0
0.0
LO LB Port
LO HB Port
RFOUT LB Port
RFOUT HB Port
-5.0
Return Loss (dB)
Return Loss (dB)
-5.0
-10.0
-15.0
-20.0
-25.0
1700.0
2.5
Low Band Return Loss versus Frequency
High Band Return Loss versus Frequency
0.0
DS110505
2.5
Low Band Current Consumption versus Gain Control
Current (mA)
0.5
-10.0
-15.0
-20.0
1750.0
1800.0
1850.0
Frequency (MHz)
1900.0
1950.0
2000.0
-25.0
700.0
750.0
800.0
850.0
Frequency (MHz)
900.0
950.0
1000.0
27 of 34
RF2483
Typical Performance: 2400MHz Application Circuit
High Band Modulator Performance versus Frequency
10
10
0
0
0
0
Output Power
-10
-20
-30
-30
-40
-40
-50
-50
-60
-60
-70
-80
2200
2250
2300
2350
2400
2450
2500
2550
Output Power (dBm)
3rd Harmonic (dBc)
Output Power
-10
Carrier Suppression
-20
-10
Carrier Suppression
-20
-20
3rd Hrmonic of Modulation
-30
-30
-40
-40
-50
-50
-70
-60
-60
-80
2600
-70
3rd Harmonic (dBc)
10
-10
Output Power (dBm)
10
-70
-10
-8
-6
-4
-2
0
2
4
6
8
LO Power (dBm)
Frequency (MHz)
5
5
Vcc=2.7V
0
0
-5
-5
-10
-10
Output Power (dBm)
Output Power (dBm)
Vcc=3.3V
-15
-20
-15
-20
-25
-25
-30
-30
-35
-35
Temp = +25 °C, Vcc=2.7V
Temp = +85 °C, Vcc=2.7V
-40
-40
0
0.5
1
1.5
2
0
2.5
0.5
0
-5
-5
-10
Output Power (dBm)
2
2.5
0
-10
-15
-20
-30
1.5
5
-25
1
Gain Control (V)
Gain Control (V)
2200MHz
2300MHz
2400MHz
2500MHz
2200MHz
2300MHz
2400MHz
2500MHz
2600MHz
-15
-20
-25
-30
-35
2600MHz
-35
-40
-40
-45
0
0.5
1
1.5
Gain Control (V)
28 of 34
2
2.5
0
0.5
1
1.5
2
2.5
Gain Control (V)
DS110505
RF2483
0
-10
2200MHz
2300MHz
2400MHz
2500MHz
0
2600MHz
-20
-30
-40
-50
-10
-20
2200MHz
2300MHz
2400MHz
2500MHz
2600MHz
-30
-40
-50
-60
-70
-60
-80
0
0.5
1
Gain Control (V)
1.5
2
2.5
0
0.5
1
Gain Control (V)
1.5
2
2.5
0
0
Temp = +25 °C, Vcc=2.7V
Temp = +25 °C, Vcc=2.7V
-10
-10
Temp = +85 °C, Vcc=2.7V
Temp = +85 °C, Vcc=2.7V
-20
-30
-20
-30
-40
-40
-50
-50
-60
0
0.5
1
Gain Control (V)
1.5
2
2.5
0
1
1.5
2
2.5
Gain Control (V)
VCC=2.7V, LO=2400MHz 3dBm, IQ=100kHz 800mVP-P 1.2VDC
VCC=2.7V, LO=2400MHz 3dBm, IQ=100kHz 800mVP-P 1.2VDC
0
0.5
0
-5
-10
Vcc=2.7V
Vcc=3.3V
-10
-15
-20
-25
Vcc=2.7V
Vcc=3.3V
-20
-30
-40
-30
-50
-35
-60
-40
0
0.5
1
1.5
Gain Control (V)
DS110505
2
2.5
0
0.5
1
Gain Control (V)
1.5
2
2.5
29 of 34
RF2483
0
-10
Vcc=2.7V
-20
Vcc=3.3V
-30
-40
-50
-60
-70
-80
0
30 of 34
0.5
1
Gain Control (V)
1.5
2
2.5
DS110505
RF2483
5.0
5.0
Vcc=2.7V
0.0
Temp = +25c, Vcc=2.7V
0.0
Vcc=3.3V
Temp = -40c, Vcc=2.7V
-5.0
Output Power (dBm)
Output Power (dBm)
-5.0
-10.0
-15.0
-20.0
-25.0
-15.0
-20.0
-25.0
-30.0
-30.0
-35.0
-35.0
-40.0
-10.0
-40.0
0
0.5
1
1.5
2
2.5
0
0.5
Gain Control (V)
1.5
2
2.5
Gain Control (V)
Vcc=2.7V, LO=0dBm, IQ=100kHz 800mVp-p 1.2VDC
Vcc=2.7v, LO=0dBm, IQ=100kHz 800mVp-p 1.2VDC
0.0
5.0
2500MHz
0.0
2500MHz
-5.0
2600MHz
-5.0
Output Power (dBm)
1
2700MHz
-10.0
-15.0
-20.0
-25.0
-30.0
-35.0
2600MHz
-10.0
2700MHz
-15.0
-20.0
-25.0
-30.0
-35.0
-40.0
-45.0
-40.0
-50.0
0
0.5
1
1.5
2
2.5
Gain Control (V)
0
0.5
1
1.5
2
2.5
Gain Control (V)
Vcc=2.7V, LO= 0dBm, IQ=100kHz 800mVp-p 1.2VDC
0.0
2500MHz
-10.0
2600MHz
2700MHz
-20.0
-30.0
-40.0
-50.0
-60.0
0
0.5
1
1.5
2
2.5
Gain Control (V)
DS110505
31 of 34
RF2483
LO=2700MHz, LO=0dBm, IQ=100kHz 800mVp-p 1.2VDC
LO=2700MHz, LO= 0dBm, IQ=100kHz 800mVp-p 1.2VDC
0.0
Temp = -40c, Vcc=2.7V
-10.0
0.0
-20.0
-30.0
-40.0
-50.0
Temp=-40c, Vcc=2.7V
Temp =+85c, Vcc=2.7V
-10.0
-20.0
-30.0
-40.0
-50.0
-60.0
0
0.5
1
1.5
2
0
2.5
0.5
Gain Control (V)
1.5
2
2.5
Gain Control (V)
LO=2700MHz, LO= 0dBm, IQ=100kHz 800mVp-p 1.2VDC
LO=2700MHz, LO=0dBm, IQ=100kHz 800mVp-p 1.2VDC
0.0
0.0
Vcc=2.7V
Vcc=2.7V
-5.0
1
Vcc=3.3V
-10.0
-15.0
-20.0
-25.0
-30.0
-35.0
-40.0
-10.0
Vcc=3.3V
-20.0
-30.0
-40.0
-50.0
-45.0
-60.0
-50.0
0
0.5
1
1.5
2
0
2.5
0.5
LO=2700MHz, 0dBm, IQ=100kHz 800mVp-p 1.2VDC
120
100
100
Current (mA)
Current(mA)
140
120
80
60
2.5
80
60
Vcc2.7V
40
Temp = -40C, Vcc=2.7V
Vcc=3.0V
Temp = +25C, Vcc=2.7V
20
2
LO=2700MHz, 0dBm, IQ=100kHz 800mVP-P 1.2VDC
160
140
40
1.5
160
1
Gain Control (V)
Gain Control (V)
20
Temp = +85C, Vcc=2.7V
Vcc=3.3V
0
0
0
0.5
1
1.5
Gain Control (V)
32 of 34
2
2.5
0
0.5
1
1.5
2
2.5
Gain Control (V)
DS110505
RF2483
High Band Return Loss versus Frequency
0.0
LO=2700MHz, Vcc=2.7V, GC=2V, IQ=100kHz 800mVp-p
10
10
LO HB port
Output Power(dBm)
Return Loss (dB)
0
-10.0
-15.0
-20.0
-25.0
0
Output Power(dBm)
-10
-10
Carrier Suppresion (dBc)
3rd Harmonic (dBc)
-20
-20
-30
-30
-40
-40
-50
-50
-60
-60
-30.0
3rd Harmonic (dBc)
RFOUT HB Port
-5.0
-35.0
2400
2500
2600
2700
2800
2900
3000
-70
-70
-10
Frequency(MHz)
-8
-6
-4
-2
0
2
4
6
8
LO Power (dBm)
High Band Modulation's 3rd Harmonic versus Gain
Control - LO=2700MHz 0dBm, IQ=100kHz 800mVp-p 1.2VDC
0
-10
Vcc=2.7V
Vcc=3.3V
-20
-30
-40
-50
-60
-70
0
0.5
1
1.5
2
2.5
Gain Control (V)
DS110505
33 of 34
RF2483
RoHS* Banned Material Content
RoHS Compliant:
Yes
Package total weight in grams (g):
0.042
Compliance Date Code:
0522
Bill of Materials Revision:
-
Pb Free Category:
e3
Bill of Materials
Parts Per Million (PPM)
Pb
Cd
Hg
Cr VI
PBB
PBDE
Die
0
0
0
0
0
0
Molding Compound
0
0
0
0
0
0
Lead Frame
0
0
0
0
0
0
Die Attach Epoxy
0
0
0
0
0
0
Wire
0
0
0
0
0
0
Solder Plating
0
0
0
0
0
0
This RoHS banned material content declaration was prepared solely on information, including analytical data,
provided to RFMD by its suppliers, and applies to the Bill of Materials (BOM) revision noted above.
*
DIRECTIVE 2002/95/EC OF THE EUROPEAN PARLIAMENT AND OF THE COUNCIL of 27 January 2003 on the restriction of the use of
certain hazardous substances in electrical and electronic equipment
34 of 34
DS110505

RF2483 - RFMD.com

Transcription

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