Energy, Power and Power Management

Transcription

NEW IN THIS ISSUE
Developing a BLDC
motor-control system?
Turn to page 11 now to see the
new Circuit Centre feature!
Component Focus: pages 3-6
ON Semiconductor’s LC823450 audio-processing
SoC helps to reduce development costs
Design Notes: pages 7-9
How does a MOSFET turn on? And the key
parameters to evaluate when choosing an LDO
Circuit Centre: pages 11-15
The best components for a new brushless DC
motor design
Application Spotlight: pages 16-24
New VIPer0P AC-DC converter consumes almost
zero power when in Stand-by mode
Application Spotlight on
Energy, Power and
Power Management
Technical View: pages 26-27
How the use of higher-cost SiC power
components can reduce total system costs
NEWS
IN
BRIEF
INTRODUCTION
STAR
Industry’s lowest-power ARM Cortex-A5-based MPU features
high-grade security capabilities
MikroElektronika signs
distribution agreement with
Future Electronics
MikroElektronika, which manufactures a
range of development tools and compilers
for microcontrollers, has announced a
distribution agreement with Future
Electronics. Its Click boards support a wide
variety of sensors, communication standards
and user interfaces, allowing engineers to
easily make design prototypes, while linking
multiple boards with the mikroBUS™
interface standard. Tools are available for the
PIC® and dsPIC® series from Microchip, the
AVR® range from Atmel, the PSoC® devices
from Cypress Semiconductor and the
STM32 line from STMicroelectronics.
‘With Future Electronics as our partner,
the availability of our products will increase
significantly,’ said Tiziano Galizia,
MikroElektronika’s Head of Sales.
ON Semiconductor to acquire
Fairchild Semiconductor
ON Semiconductor and Fairchild
Semiconductor International Inc have
announced that they have entered into a
definitive agreement for ON Semiconductor
to acquire Fairchild in an all-cash transaction
valued at approximately $2.4bn. The
acquisition creates a leader in the power
semiconductor market with combined
revenue of approximately $5bn, diversified
across multiple markets with a strategic focus
on automotive, industrial and smartphone
end markets.
Future Electronics is a franchised
distributor worldwide for both companies.
‘Better demand management
needed’ in electronics supply
chain, Future Electronics
conference is told
OEMs need to improve the way they manage
their demand for electronic components if
they are to handle the risks inherent in an
increasingly complex supply chain, Alberto
Della Chiesa, Vice-President for Supply
Chain Solutions at STMicroelectronics told a
conference hosted by Future Electronics in
Leipzig on 12 November.
Some 150 customers of Future Electronics
from all over Europe attended the conference,
which was dedicated to the theme of
‘Supply Chain Innovation’. It also included
visits to Future Electronics’ EMEA Distribution
Centre (EMEA DC), one of Europe’s largest
stores of electronic components, and to the
largest DHL logistics hub in the world, on
the site of Leipzig airport.
©Copyright 2016 Future Electronics Ltd. All trademarks contained herein are the
property of their respective owners. Applications for product samples, badge
boards, demonstration boards, Future Electronics’ boards and other advertised
materials from Future Electronics are offered subject to qualification.
160101:
2
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info@my-ftm.com
PRODUCT
ATMEL
Atmel has launched a new series of
secure Atmel | SMART ARM® Cortex®-A5based microprocessors which offer lower
power consumption than any other MPU
in its class.
Welcome to the first issue in 2016 of FTM,
the technology magazine for customers of
Future Electronics.
The special theme of this issue is ‘Power and Power Management’, a topic of
interest to anyone designing an electronics system. In the Application Spotlight
section of the magazine in particular, pages 16-24, readers will find a selection of
the newest and best parts for power systems.
Many of these parts address system designers’
need to reduce the amount of power that their
products consume, both in normal operation
and when idle. Across every sector of the
electronics industry, the requirements of energyefficiency legislation are becoming more stringent.
This is nowhere more so than in the field of
motor drives: driven by regulations such as the
European Commission’s Energy-related
Products (ErP) directive, manufacturers of
electric motors are having to equip their
products with the ability to match their speed
and power output to the load, providing for a
huge reduction in average power consumption.
For many OEMs, the best way to meet the
requirements of the ErP directive is to replace
legacy fixed-speed motors with a new Variable
Speed Drive (VSD) design. The Circuit Centre
section on pages 11-15 is dedicated to
components that are ideal for use in VSDs.
This includes Intelligent Power Modules
(IPMs) such as the ON Semiconductor device
on page 15: IPMs provide a quick and simple
means to implement a motor-drive’s inverter,
and they also save board space when
compared to discrete inverter circuits.
The push for greater power efficiency is also
fuelling growing interest in Silicon Carbide (SiC)
components: SiC devices achieve lower power
losses than silicon-based equivalents, can
switch faster and can operate at higher
temperatures. In terms of performance and
efficiency, then, SiC is far better than silicon as a
material for high-voltage power components.
The problem with SiC is its cost – but there
might be good news on the horizon for
designers who want to use SiC components
but who are concerned about the impact on
their budget. As the market for electric and
plug-in hybrid electric vehicles undergoes rapid
growth, SiC components will be used in the
vehicle’s traction power system and in fast
chargers This promises to drive up sales
volumes and therefore to reduce unit prices.
This could have a knock-on effect on the
general electronics market, allowing a far wider
range of high-voltage applications to benefit
from the efficiency and performance of SiC
MOSFETs, diodes and power modules. The
BSM180D12P3C007, a SiC power module from
ROHM Semiconductor featured on page 18, is
an excellent example of the latest generation of
SiC power components now available to the
electronics industry.
Whether your interest is in SiC MOSFETs,
IPMs or other new components, FTM presents
you with an interesting selection of new parts.
Enjoy reading!
Paul Donaldson
Vertical Markets Director, Future Electronics (EMEA)
EMAIL INFO@My-FTM.COM FOR SAMPLES AND DATASHEETS
The new SAMA5D2 MPUs draw less than
200µA in Retention mode with context
preserved and have a fast 30µs wake-up time.
In the devices’ new Back-up mode, in which
the DDR memory continues to refresh itself, the
current is just 50µA.
The SAMA5D2 series provides for a high
level of system integration, with the addition of
a complete audio sub-system and built-in
Payment Card Industry (PCI)-level security in
miniature Ball Grid Array (BGA) packages with
196, 256 or 289 pins.
The series is ideal for applications requiring
an entry-level MPU and an extended industrial
ambient temperature range of -40°C to 105°C.
The new devices also provide an excellent
upgrade option for designers currently using
ARM926-based MPUs, and who require higher
performance, low-power operation, higher
security, DDR3 support and a smaller footprint, as
well as access to audio and USB functionality
and Atmel’s patented SleepWalking™ technology.
The robust security system in the new SAMA5D2
MPUs includes the ARM® TrustZone® technology,
along with secure boot, hardware cryptography,
RSA/ECC capability, on-the-fly encryption/
decryption on DDR and QSPI memories, tamper
resistance, memory scrambling, independent
watchdog, temperature, voltage and frequency
monitoring and a unique ID in each device.
Featuring an ARM NEON™ engine, the new
SAMA5D2 series’ ARM Cortex-A5 core runs at
an operating frequency of 500MHz, providing
throughput of 785DMIPS. Its memory system
includes a configurable 16- or 32-bit DDR
interface controller, 16-bit External Bus
Interface (EBI), QSPI Flash interface, ROM with
secure and non-secure boot solution,
128kbytes of SRAM, plus 128kbytes of L2
cache configurable as an SRAM extension.
The user interface system for the SAMA5D2
includes a 24-bit TFT LCD controller, multiple
I2S and SSC/TDM channels, a stereo Class D
amplifier and digital microphone support.
ENERGY
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INDUSTRIAL
LIGHTING
MEDICAL
AUTOMOTIVE SECURITY
CONSUMER TELECOMMS
APPLICATIONS
Industrial IoT equipment
Wearable devices
Point-of-sale terminals
FEATURES
• Floating point unit
• Dual CAN-FD controller
• 10/100 Ethernet MAC with IEEE 1588
• Two Hi-speed USB ports
• One 12-bit image sensor controller with
Raw Bayer support
• Free Linux distribution
• 40 peripheral drivers encoded in C
160102:
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WORKING PARTNER CCMOS’ CCS811: page 4
FREE
BOARDS
STAR
PRODUCT
The SAMA5D2 Xplained Ultra is a fast prototyping and
evaluation platform for the SAMA5D2 series of MPUs.
The board includes an ATSAMA5D27-CU MPU and
eMMC and DDR3 memories, as well as a rich set of
connectivity options.
Orderable Part Number: ATSAMA5D2-XULT
Apply now at my-boardclub.com
Fast-track board request code: FTM61A
Atmel’s SAMA5D2: ARM Cortex-A5 core runs at 500MHz
Ultra low-power op amps ideal for conditioning PIR
sensor signals
STMICROELECTRONICS
The operational amplifiers in
STMicroelectronics’ new TSU10x series
draw an extremely low current, enabling
designers to optimise their power
budget and extend battery lifetime.
The TSU101, TSU102 and TSU104 provide
accurate signal conditioning of high-impedance
sensors; the TSU104 is particularly well suited
for use with Passive Infra-Red (PIR) presencedetection sensors.
A PIR sensor may be used in a batterypowered system to detect the presence of a
person in its field of vision. It is commonly
used in security systems, automatic doors and
automatic light controls.
The TSU104, which integrates four op-amps
inside a single package and offers 8kHz of
gain bandwidth, can amplify and filter the small
signal generated by a PIR sensor.
Its tiny 3mm x 3mm package helps to keep
the system’s board footprint to a minimum,
and thus helps OEMs to reduce bill-of-materials
and manufacturing costs.
Featuring a no-load current of 580nA per
channel, the TSU10x op amps draw less
current than is supplied by the typical selfdischarge current of a lithium-ion battery.
ST’s STM32L486xx: page 4
WORKING PARTNER NXP’s PCAL6524: page 5
ENERGY
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INDUSTRIAL
LIGHTING
MEDICAL
AUTOMOTIVE SECURITY
CONSUMER TELECOMMS
APPLICATIONS
Ultra-violet and photo-sensors
Electrochemical and gas sensors
PIR sensors
Battery-current sensing
Medical instrumentation
FEATURES
• 5pA maximum input bias current at 25°C
• Operating-voltage range: 1.5V to 5.5V
• Unity gain stable
• Rail-to-rail input and output
• 2kV ESD rating according to human body
model
• Operating temperature range:
-40°C to 85°C
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TSU10x op amp: 580nA no-load current per channel
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3
COMPONENT
FOCUS
COMPONENT
Digital gas sensor offers low
power consumption
CAMBRIDGE CMOS SENSORS
Cambridge CMOS Sensors (CCS) has
launched the CCS811, the first digital
product in its family of ultra-low-power
miniature gas sensors.
The CCS811 integrates a metal-oxide gas
sensor with a microcontroller sub-system, an
ADC and an I2C interface in a single package.
Providing an easy-to-use digital measurement
of ambient gas concentrations, the CCS811
may be used for indoor air-quality monitoring
when embedded in wearables, connectedhome devices, HVAC systems and
smartphones.
Its highly integrated design makes system
implementation easy and helps to reduce billof-materials costs. The internal MCU performs
the processor operations required to generate
measurements of equivalent CO2 levels or to
trigger Volatile Organic Compound (VOC)
indicators without intervention by the host
system’s processor.
The CCS811 can be used to detect ethanol
(alcohol) and hazardous gases such as carbon
monoxide and a wide range of VOCs. Its
unique micro-hotplate sensing technology
greatly reduces power consumption when
compared to traditional metal-oxide gas
sensors, as it provides for very fast cycle and
measurement times.
The CCS811 is available in a 2.7mm x
4.0mm LGA package.
STMicroelectronics has reduced the
power required to operate a
sophisticated 32-bit microcontroller to
a new low level with the introduction of
its STM32L4 series of MCUs.
The first two microcontrollers in the series, the
STM32L476 and STM32L486, feature an
80MHz ARM® Cortex®-M4 core with DSP and
floating-point unit. This low-power core is
combined in the STM32L4 devices with the ST
ART Accelerator™, which provides for zero-wait
execution of instructions from Flash.
This combination of low-power technologies
enables the devices to achieve up to
100DMIPS while drawing just 100µA/MHz. Up
to 1Mbyte of dual-bank Flash and 128kbytes
of SRAM support sophisticated applications
and read-while-write capability.
The ultra-low power consumption of these
new MCUs has been verified in independent
testing against the standard EEMBC™
ULPBench® benchmark: in tests comparing
the efficiency of various ultra-low-power
microcontrollers, the STM32L476 and
STM32L486 scored 123, the best in the industry.
4
INDUSTRIAL
LIGHTING
MEDICAL
AUTOMOTIVE SECURITY
CONSUMER TELECOMMS
APPLICATIONS
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Smart home devices
Smart office devices
NXP SEMICONDUCTORS
FEATURES
• <1.2mW average power consumption
during active sensor measurement
<6µW power consumption in Idle mode
Rated for >5 year lifetime
•
•
160104:
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FREE
BOARDS
The CCS_EVK04_DEV consists of a CCS811 sensor
daughter board with I2C interface and an I2C-to-USB
bridge board to enable connection to a computer.
Windows®-based software is available for sensor
measurements and for logging results.
Orderable Part Number: CCS_EVK04_DEV
CCS811: detects ethanol and hazardous gases
Other low-power technologies implemented by
ST in the STM32L4 microcontrollers include:
• dynamic voltage scaling to balance power
consumption with processing demand
• the FlexPowerControl architecture
• seven power-management modes with submode options. These include Stop, Standby, and Shut-down modes, in which current
is as low as 30nA
• Batch acquisition mode for efficient data
exchange with communication peripherals
while in low-power mode
The STM32L476 and STM32L486 also feature
three 12-bit ADCs operating at up to
5Msamples/s. Hardware oversampling enables
the devices to achieve an upscaled 16-bit
resolution.
NXP’s PCAL6524: page 5
WORKING PARTNER ST’s TSU10x: page 3
Level-shifting I/O expander supports ultra-lowvoltage operation
ST’s TSU10x: page 3
WORKING PARTNER Atmel’s SAMA5D2: page 3
32-bit MCUs combine performance and
ultra-low energy use
STMICROELECTRONICS
ENERGY
ENERGY
INDUSTRIAL
LIGHTING
MEDICAL
AUTOMOTIVE SECURITY
CONSUMER TELECOMMS
APPLICATIONS
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Internet of Things devices
Industrial equipment
Medical equipment
Consumer products
FEATURES
• Two 12-bit DACs
• Voltage-reference buffer
• Two ultra-low-power comparators
• Two op amps
• 256-bit AES hardware cryptographic
co-processor
• Internal RC clock source accurate to ±1%
• Digital filter for sigma-delta modulator
• 2 ultra-low-power timers
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FREE
BOARDS
The STM32L4 Discovery Kit combines an STM32L476
MCU with an LCD screen, LEDs, audio DAC,
microphone, gyroscope and compass, joystick and
connectivity features. It includes an embedded ammeter
which measures the MCU’s power consumption in lowpower modes.
Orderable Part Number: STM32L476G-DISCO
FOLLOW US NOW – SEARCH FTM BOARD CLUB ON
FOCUS
The PCAL6524 is a 24-bit generalpurpose I/O expander which provides
remote I/O expansion suitable for most
microcontrollers, via a Fast-mode Plus
(Fm+) I2C bus interface. Its ultra-lowvoltage interface allows for direct
connection to an MCU operating at a
voltage as low as 0.8V.
I/O expanders provide a simple solution when
additional I/Os are needed while keeping
interconnections to a minimum. This is useful,
for example, in battery-powered mobile
applications for interfacing an MCU to sensors,
push buttons and a keypad.
In addition to providing a flexible set of GPIOs,
the PCAL6524’s built-in level-shifting capability
simplifies interconnection of a processor
running at one voltage level to I/O devices
operating at a different voltage level.
The PCAL6524 operates from two supply
voltages: one provides the supply voltage for
the interface at the master side (for example, to
an MCU), and the other provides the supply for
core circuits.
The PCAL6524 conforms to the Fm+ I2C bus
specification at speeds up to 1MHz, and
implements Agile I/O features such as:
• programmable output-drive strength
• latchable inputs
• programmable pull-up/pull-down resistors
• maskable interrupt
• interrupt status register
• programmable open-drain or push-pull
outputs
The device’s outputs can sink 25mA to directly
drive LEDs.
WORKING PARTNER ST’s STM32L486xx: page 4
ENERGY
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INDUSTRIAL
LIGHTING
MEDICAL
AUTOMOTIVE SECURITY
CONSUMER TELECOMMS
APPLICATIONS
Companion device to a microcontroller
FEATURES
• 2µA stand-by current at 3.3V
• Internal power-on reset
• 5.5V-tolerant I/O ports and 3.6V-tolerant
I2C bus pins
• Noise filter on inputs
• 2kV ESD protection according to the
human body model
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Advanced audio-processing SoC saves
space and power
ON SEMICONDUCTOR
ON Semiconductor has released its
latest high-resolution audio-processing
System-on-Chip (SoC), which enables
designers to reduce the
size and prolong the
battery run-time of
mobile devices, wearable
accessories and voice
recorders.
design and keep development costs to a
minimum. These samples include advanced
functions such as noise cancellation, and SLive (Low-frequency Intelligence Virtual
Excitation) for enhanced playback of low
frequencies.
With 1.6Mbytes of on-chip SRAM, the new
LC823450 has ample memory for audio
processing and application tasks without
needing a companion memory chip. Designers
can also take advantage of a number of
integrated audio peripherals, such as an ADC,
a phase-locked loop and a Class D amplifier.
In addition, industry-standard interfaces such
as SPI, I2C, SDCard and UART enable product
designers to provide for connectivity to other
system functions.
The LC823450 is available in two package
styles: a 5.5mm x 5.3mm chip-scale package,
and a TQFP measuring 14mm x 14mm.
ENERGY
The new LC823450 is based
on a highly efficient ARM®
Cortex®-M3 processor core
and ON Semiconductor’s
32-bit/192kHz audioprocessing engine. The
audio engine implements
MP3 encoding and decoding
and wireless-audio support
in hardware, which both
boosts performance and
reduces power usage.
In addition, a large
selection of royalty- and
licence-free DSP code
samples are available, which
help to accelerate software
INDUSTRIAL
LIGHTING
MEDICAL
AUTOMOTIVE SECURITY
CONSUMER TELECOMMS
APPLICATIONS
• Digital voice recorders
• Wireless headsets
• Other portable audio devices
• High-resolution audio players
FEATURES
• I S interface
• DSP code for FLAC codec
• Hi-Speed USB2.0 device/host interface
• Oscillation controller to dynamically
2
change clock frequency
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LC823450: encodes/decodes MP3 files in hardware
5
P•I
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COMPONENT
DESIGN
FOCUS
NOTE
SECTION
Board-to-board connectors absorb large
mounting misalignments
HIROSE
The FX22 series of floating board-toboard connectors from Hirose can
absorb mounting misalignment when
used in applications in which multiple
connectors are found on the same
board.
The FX22 connector range consists of
low-profile headers and receptacles
which provide a co-planar board-toboard connection. The header has a
unique floating structure embedded
inside the housing. This allows
movement in the x and z directions of
up to ±0.6mm, absorbing mounting
misalignments and reducing the risk
of mounting failure.
Large mating guides on each side
of the connector also allow for an
alignment movement of ±1.2mm in
the x and z directions to simplify the
mating operation and to prevent
incorrect insertion.
The receptacle features double beam contacts.
Each beam requires a different contact force to
ensure dissimilar vibration characteristics and
different resonant frequencies, helping to
minimise contact damage and providing for
high vibration resistance. Furthermore, the first
beam contact has a self-cleaning function which
removes dust from the contact path of the
second beam contact, thus improving reliability.
The popular, high-speed FX18 series boardto-board connectors may be combined with
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INDUSTRIAL
LIGHTING
MEDICAL
AUTOMOTIVE SECURITY
CONSUMER TELECOMMS
APPLICATIONS
Broadcast equipment
Smart meters
Medical devices
Base transmitter stations
Measuring instruments
Projectors
FEATURES
Contact sizes: 40, 50, 60, 80
0.7A current rating
0.5mm pitch
50V rating
50 mating cycles
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Hirose’s FX22: first beam contact has a self-cleaning function
C&K COMPONENTS
C&K has introduced the KSC range of
tactile dome-contact switches, which
are suitable for use in applications
requiring a lifetime
rating of as many as
5 million cycles.
6
ENERGY
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Robust, IP67-rated switches can
withstand 5 million button presses
The switches developed
by C&K are the KSC201
J/G LFS, the KSC401
J/G 50SH LFS, the
KSC701 J/G LFS and the
KSC1001 J/G LFS.
These parts give
designers a choice of
colours, dome sizes and
dome styles.
All provide positive
tactile feedback to the
user, and are IP67-rated
for protection against
moisture and other
environmental hazards.
the floating FX22 connectors on the same
board. In addition, the FX20 series can be
combined with the FX22 to provide a vertical or
parallel connection.
The switches are suitable for surface mounting,
and offer J-bend or gullwing-type terminations.
The termination material determines the
operating temperature rating. Switches with
silver terminations are rated for operation at
temperatures between -40°C and 85°C. With
gold terminations, this range is extended to
cover -55°C to 125°C.
ENERGY
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INDUSTRIAL
LIGHTING
MEDICAL
AUTOMOTIVE SECURITY
CONSUMER TELECOMMS
APPLICATIONS
Automotive devices
Industrial electronics equipment
Network infrastructure
Computing equipment
A guide to the key performance parameters of LDOs
INTERSIL
A Low Dropout regulator (LDO) is generally thought of as a
simple and inexpensive way to regulate and control an output
voltage which is produced from a higher input-voltage supply.
However, cost and simplicity are not the only reasons for their
widespread use. In fact, today’s systems are getting more
complex, noise-sensitive and power-hungry. The widespread
use of switching power supplies at all power levels means
that designers must spend more time avoiding noise-coupling
and interference, while improving system efficiency, so cost
and simplicity cannot be the only factors affecting power
component choices.
For most applications, a datasheet’s specifications of basic parameters
are clear and easy to understand. Unfortunately, datasheets do not list
the parameters for every possible circuit condition. Therefore, to make
the best use of an LDO, it is necessary to understand the key
performance parameters and their impact on any given load. Designers
will need to determine whether the LDO is suitable for a specific load by
closely analysing the prevailing circuit conditions.
An LDO is comprised of three basic functional elements: a reference
voltage, a pass element and an error amplifier. During normal operation,
the pass element behaves as a voltage-controlled current source. The
pass element is driven by a compensated control signal from the error
amplifier, which senses the output voltage and compares it with the
reference voltage. Each of these functional blocks affects the LDO’s
performance. LDO manufacturers’ datasheets always include
specifications that indicate the performance of these functional elements.
Dropout voltage
Dropout voltage is defined as the difference between the input and
output voltages at the point when a further decrease in input voltage
causes output voltage regulation to fail. In the dropout condition, the
pass element operates in the linear region and behaves like a resistor.
For the modern LDO, the pass element is commonly implemented with
PMOS or NMOS FETs, which can typically achieve a dropout voltage
ranging between 30mV and 500mV. Figure 1 shows the dropout voltage
of the ISL80510 LDO, which uses a PMOS FET as the pass element.
FEATURES (KSC2 series)
• Maximum power:
1VA for silver; 0.2VA for gold
• 32V DC maximum voltage
• 20mV minimum voltage
• Maximum current:
50mA for silver; 10mA for gold
• Minimum current:
•
•
•
•
1mA for silver; 0.1mA for gold
>250V dielectric strength
<100mΩ contact resistance
>10MΩ insulation resistance
<1ms bounce time
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KSC switches: choice of colours, dome sizes and dome styles
Fig. 1: Dropout voltage of Intersil’s ISL80510
Load regulation
Load regulation is defined as the output voltage change for a given load
change. This is typically from no load to full load:
Load regulation indicates the performance of the pass element and the
closed-loop DC gain of the regulator. The higher the closed-loop DC
gain, the better the load regulation.
Line regulation
Line regulation is the output voltage change for a given input voltage
change, as shown in the following equation:
Since line regulation is also dependent on the performance of the pass
element and closed-loop DC gain, dropout operation is often not
included when considering line regulation. Hence, the minimum input
voltage for line regulation must be higher than the dropout voltage.
Power-supply rejection ratio
The Power-Supply Rejection Ratio (PSRR) is an indication of the LDO’s
ability to attenuate fluctuations in the output voltage caused by the input
voltage. While line regulation is only considered at DC, PSRR must be
considered over a wide frequency range:
The PSRR consists of the closed-loop
gain, T(s), and the inverse of the openloop transfer function from input to output
voltage, 1/Gvg, as shown in Figure 2.
While the closed-loop transfer function
dominates at lower frequencies, the openloop transfer function from input to output
voltage dominates at higher frequencies.
Fig. 2: PSRR plotted against frequency
Noise
This parameter normally refers to the noise on the output voltage
generated by the LDO itself, which is an inherent characteristic of the
bandgap voltage reference. Most low-noise LDOs need an additional
filter to prevent noise from entering the closed loop.
Transient response
LDOs are commonly used for point-of-load regulation of digital ICs,
DSPs, FPGAs and low-power CPUs, where the transient behaviour of
the LDO is of high importance.
As in all closed-loop systems, the transient response mainly depends
on the bandwidth of the closed-loop transfer function. To achieve the
best transient response, the closed-loop bandwidth has to be as high as
possible while ensuring sufficient phase margin to maintain stability.
Although an LDO’s conversion
efficiency is lower than that of a
Switch-Mode Power Supply
(SMPS), in many applications the
LDO is to be preferred. In noisesensitive applications, it is difficult
for an SMPS to achieve the
necessary output ripple to meet a
tight noise specification.
Fig. 3: Transient response of the ISL80510
Consequently, it is not uncommon
(2.2VIN, 1.8VOUT)
for an LDO to be added as an
active filter to the output of an
SMPS. This LDO must have high PSRR at the SMPS’ switching
frequency.
LDOs are particularly well suited to applications that require an output
voltage regulated to slightly below the input voltage.
Favourable parameters of ISL80510
For mid- to high-current applications, Intersil’s ISL80510/05 provides
balanced performance across all the important LDO performance
parameters: low dropout, transient performance, voltage accuracy and a
near flat PSRR response across a wide range of frequencies, as shown
in Figure 3.
info@my-ftm.com
160110:
7
DESIGN
NOTE
DESIGN
NOTE
Power MOSFETs: understanding the turn-on process
VISHAy
The question of how to turn on a MOSFET might sound
trivial, since ease of switching is a major advantage of fieldeffect transistors. Since MOSFETs are voltage-driven, many
users assume that they will turn on when a voltage, equal to
or greater than the threshold, is applied to the gate.
However, the question of how to turn on a MOSFET or, at a more basic
level, what is the minimum voltage that should be applied to the gate,
needs reappraisal now that more and more converters are being
controlled digitally. While digital control offers flexibility and functionality,
the DSPs, FPGAs and other programmable devices with which it is
implemented are designed to operate with low supply voltages. It is
necessary to boost the final PWM signal to the level required by the
MOSFET gate.
This is where things can go wrong: many digital designers look at the
gate threshold voltage and assume that, just like a logic function, the
MOSFET will change state as soon as the threshold is crossed. This
assumption, unfortunately, is wrong.
In fact, the gate-source threshold voltage value is not even intended
for use by system designers. It is the gate voltage at which the drain
current crosses the threshold of 250µA. It is also measured under
conditions that do not occur in real-world applications. The truth is that
the threshold voltage is a MOSFET designer’s parameter. It defines the
point at which the device is at the threshold of turning on. In other
words, it is an indication of the beginning of the process, and is nowhere
near the end of it.
Certainly, the gate voltage should be held below the threshold in the
off state to minimise leakage current. But for the purposes of turning on
the MOSFET, system designers can, and should, ignore the threshold
value entirely.
So what information should the system designer turn to? A MOSFET
datasheet will have a curve which shows the MOSFET turning on with
Fig. 2: The SiR826ADP’s output characteristics
Fig. 4: SiR826ADP’s gate-charge characteristics
Fig. 6: Gate-charge components and timings
More important, the curve showing data with the MOSFET fully on is
called the output characteristics curve, as shown in Figure 2. Here, the
MOSFET’s forward drop is measured as a function of current for different
values of the gate-source voltage. System designers may refer to this
curve when they wish to ensure that the gate voltage is sufficient.
As Figure 2 shows, for each gate voltage at which an on-resistance
value is guaranteed, there is a range in which the drain-source voltage
drop maintains strict linearity with current, beginning from zero. For lower
values of gate voltage, as the current is increased the curve loses its
linearity, goes through a knee, and flattens out.
A closer view of the output characteristics for gate voltages between
2.5V and 3.6V is shown in Figure 3. MOSFET users usually think of this
When confronted with the output characteristics, designers tend to
demand to know the on-resistance at their particular operating
conditions. Typically it will be at a combination of the gate-source
voltage and the drain-source current when the curve has strayed from
the straight and narrow into the grey area.
In fact, the real key to turning on the MOSFET is provided by the gatecharge curve shown in Figure 4. While this curve is routinely provided in
every MOSFET’s
datasheet, its
implications are not
always understood by
designers. In addition,
recent developments in
MOSFET technology,
such as trench and
shielded gates and
charge-compensating
superjunction
structures, demand a
fresh appraisal of this
information.
Fig. 5: Simplified inductive turn-on circuit
To start with, the term
‘gate charge’ itself is somewhat misleading. The linearised and
segmented curve does not look like the charging voltage of any
capacitor, no matter how non-linear its value. In reality the gate-charge
curve represents a superposition of two capacitors which are not in
parallel, have different values, and carry different voltages.
In the literature, the effective capacitance, Ciss, as seen from the gate
terminal is defined as the sum of the gate-source capacitance and the
gate-drain capacitance.
While this is a convenient entity to measure and specify in the
datasheet, it is worth noting that gate charge is not a physical
capacitance. It would be a misconception to imagine that the MOSFET
is turned on by simply applying a voltage to ‘the gate capacitance Ciss’.
Before turn-on, the gate-source capacitance is uncharged, but the gatedrain capacitance has a negative voltage/charge which needs to be
removed. Both capacitors are non-linear; their values can vary widely
with respect to applied voltage. The switching characteristics, therefore,
are dependent more on their stored charges rather than the capacitance
value at any given voltage.
Since the two component capacitances that make up gate
capacitance are physically different and are charged to different voltages,
the turn-on process also has two stages. The exact sequence is
different for inductive and resistive loads; in most applications, however,
the load is heavily inductive and can be described using the circuit model
shown in Figure 5.
The timing diagram is shown in Figure 6:
Fig. 3: Detailed view of the SiR826ADP’s output characteristics
Fig. 1: The SiR826ADP’s transfer characteristics
increasing gate voltage: the transfer characteristics. This is illustrated for
Vishay’s SiR826ADP MOSFET in Figure 1.
The transfer characteristics, however, are most useful as a measure of
current variation with respect to temperature and applied gate voltage.
8
as the linear mode. However, device designers refer to the grey area as
the current saturation region: for the given gate voltage, the current that
can be produced has reached its saturation limit.
Any increase in applied drain-source voltage will be sustained with
only a slight increase in the current, whereas even a slight change in
current can lead to a relatively large increase in the drain-source voltage.
For higher gate voltages, when the MOSFET has been fully turned on,
any operating point will be located in the area shaded in green to the
left, marked as the resistive (or ohmic) region.
T0 – T1: gate-source capacitance is charged from zero to the threshold
voltage. There is no change in the drain-source voltage or current.
T1 – T2: current begins to rise in the device as the gate voltage rises
from its threshold value to the plateau voltage. Drain-source current rises
from 0A to the full load current, but there is no change in drain-source
voltage. The charge associated with it is the integral of the gate-source
voltage from 0V to the plateau voltage, and is specified in datasheets as
‘Qgs’.
T2 – T3: the flat region between T2 and T3 is also known as the Miller
plateau. Before turn-on, the gate-drain capacitance is charged to the
supply voltage and holds it until the current has peaked at T2. Between
T2 and T3, the negative charge is converted to the positive charge
corresponding to the plateau voltage. This is also seen as a fall of the
drain voltage from the input voltage to near zero. The charge associated
with this is approximately the integral of the gate-drain capacitance from
zero to the input voltage, and is specified in datasheets as ‘Qgd’.
T3 – T4: as the gate voltage rises from the plateau voltage to the gatesource voltage, there is very little change in the drain-source voltage or
current. The effective on-resistance, however, reduces marginally with
the rising gate voltage. At some voltage above the plateau voltage,
MOSFET manufacturers feel confident enough to guarantee an upper
limit to the effective on-resistance.
In the real world, then, turning on a MOSFET is not an event but a
process. It is not a question of applying a voltage as an input at the gate
which will toggle the output from high to low on-resistance. It is the two
charges, Qgs and Qgd, injected into the device through the gate pin,
which do the job.
The gate voltage will rise above the threshold and plateau values in
the process, but that is a by-product of the turn-on process.
In addition, the speed with which a modern power MOSFET turns on
or off is not a simple function of Qgs or Qgd. A detailed study of both the
gate-charge curve and capacitance characteristics is necessary to
compare switching speeds, especially for superjunction MOSFETs.
160111:
info@my-ftm.com
9
CIRCUIT
CENTRE
BLDC Motor Control
Interest in implementing Brushless DC (BLDC) motors is
growing fast as OEMs respond to the worldwide effort to
save energy and resources by adopting efficient,
electronically commutated motor types.
BLDC motors are one of the most popular choices of new
motor technology. Typically up to 10% more power-efficient
than common AC motors, BLDC motors are also smaller and
lighter, and offer long lifetimes because they have no brushes
to wear out. Sophisticated commutation schemes also
enable them to rotate at high speed: designers commonly
achieve speeds of 20,000rpm using BLDC technology.
While BLDC motors can be implemented with a wide
range of power ratings, they all share common elements:
• a control block using either a dedicated ASSP, a
microcontroller or a DSP
• a power block using MOSFET or IGBT switching devices
• communication, which can be achieved in various ways,
including dedicated fieldbuses and Ethernet
In addition, sensorless control is possible, but many
designers will choose to use a position sensor, as well as
isolation barriers where appropriate.
Future Electronics’ suppliers have partnered with us to
offer their best-in-class parts to fit these functional blocks,
featured in this new Circuit Centre section. We hope you
enjoy this new section of FTM, and that over time it
becomes a useful library of good ideas for you to implement
in your designs.
Colin Weaving
Technology Director, Future Electronics (EMEA)
Recommended Parts
n POWER SUPPLY
Fairchild: FAN7930
Fairchild: FAN6605
STMicroelectronics: L6699
STMicroelectronics: STSR2P
n OPTOCOUPLER
Everlight: EL071
Everlight: ELS511/611
Fairchild: FOD8314
Fairchild: HCPL2731M
n GATE DRIVER
Atmel: ATA6831C
Fairchild: FOD3150
Intersil: HIP2103/4
Intersil: ISL8003X
Vishay: VOW3120
n MCU
Atmel: ATmega168PB
Atmel: ATSAM E70
Microchip: DSPIC30F6010
NXP: LPC1518JBD100
STMicroelectronics: STM32F100C6T6B
n TEMP SENSOR
Atmel: AT30TS75A
NXP Semiconductors: PCT2075
Microchip: MCP9808
ON Semiconductor: NCT75
n HALL/MAGNETIC SENSOR
Crocus: CTSR500
Diodes: AH49
Diodes: AH182P
n PHY
Microchip: KSZ8091
n IPM
Fairchild: FSB50260SF
Littelfuse: MG06100S-BN4MM
ON Semiconductor: STK5C4U332J-E
STMicroelectronics: STGIB15CH60TS-L(E)
STMicroelectronics: STGIF10CH60TS-L(E)
Vishay: CPV362M4FPbF
n POWER FETs
Fairchild: FCP220N80
STMicroelectronics: STB15N80KS
STMicroelectronics: STW21N150K5
STMicroelectronics: STW12N150K5
n DISCRETE IGBTs
Fairchild: FSBB20CH60
Microsemi: APT25GR120BSCD10
DIODES
ON Semiconductor: MBR40250
STMicroelectronics: STTH12R06
CAN Transceiver
Microchip: MCP2551
NXP Semiconductors: TJA1057GTK
ON Semiconductor: NCV7341
Development Tools
Future/NXP Semiconductors: FSB1500
STMicroelectronics: P-NUCLEO-IHM001
World’s first 1,500V MOSFETs for safer, greener power
A new family of power MOSFETs from STMicroelectronics, the MDmesh™ K5 devices, are the first in the world to combine
the benefits of superjunction technology with a very high drain-to-source breakdown voltage of 1,500V.
MOSFET
160112:
info@my-ftm.com
STMICROELECTRONICS
ST’s improved superjunction
technology offers new high
levels of performance, including
the lowest on-resistance as a
factor of area, the lowest gate
charge, and the industry's best
Figure of Merit (FoM).
The first two members of the MDmesh K5 family are:
• the STW12N150K5, with a maximum drain-to-source current of 7A
and gate charge as low as 47nC
• the 14A STW21N150K5, offering on-resistance as low as 0.9Ω
The devices are ideal for electronically commutated motors and all
popular power-supply topologies, including standard, quasi-resonant
and active-clamp flyback converters, and
LLC half-bridge converters.
• 4V gate-source threshold voltage
For more information
• Withstands up to 50V/ns transients
e-mail info@my-ftm.com
• Junction-temperature range:
-55°C to 150°C
160113:
11
CIRCUIT
CIRCUIT
CENTRE
Temperature sensor achieves Hall-effect sensors provide stable
and accurate position data
accuracy of ±1°C
The AH49 from Diodes Incorporated is a series of small,
The PCT2075 from NXP Semiconductors is a temperatureto-digital converter which is accurate to ±1°C over a range
of -25°C to 100°C.
TEMP
SENSOR
NXP SEMICONDUCTORS
The device can be configured to work as a thermal watchdog, since it
includes an open-drain output which becomes active when the
temperature exceeds programmed limits.
The PCT2075 can be configured for different operating modes. It can
be set in Normal mode to periodically monitor the ambient temperature,
or in Shut-down mode to minimise power consumption.
• Pin-for-pin replacement
for LM75 series
• Operating temperature
range: -55°C to 125°C
• <1µA supply current in
Shut-down mode
versatile linear Hall-effect sensors which are available in
SOT23, SC59 and TO92 packages, and with various levels of
magnetic-field sensitivity.
HALL
SENSOR
DIODES INCORPORATED
The output voltage midpoint is at half of the supply voltage and varies in
proportion to the polarity and strength of the magnetic field about this
midpoint. This makes the
AH49 series ideal for use as
position sensors in
electronically commutated
motors such as brushless DC
motors.
• Low-noise output
• Integrated precision
resistors for high
temperature stability and
accuracy
• Low-power operation:
3.5mA current at 5V supply
160116:
160114:
Half-bridge driver enables
smooth control of DC motors
Highly integrated Ethernet PHy includes
on-chip low-noise 1.2V regulator
Atmel’s ATA6831C is a fully-protected triple half-bridge
driver which enables a microcontroller to control a motor in
automotive and industrial applications.
Microchip’s KSZ8091 is a 10/100 Ethernet physical-layer
transceiver (PHY), suitable for transmitting and receiving
data over standard CAT-5 unshielded twisted pair cable.
ATMEL
GATE
DRIVER
Each of the three highside and three low-side
drivers, internally
connected to form three
half-bridges, can drive
currents up to 1.0A. Able
to support PWM
frequencies up to 25kHz,
the ATA6831C can
smoothly control two DC
motors or a single
brushless DC motor.
• Supply voltage up to 40V
• 0.8Ω on-resistance
• 1.0A maximum output
current
FREE
BOARDS
Orderable Part Number: ATA6831-DK
160115:
Operating at 300MHz, the high-performance SAM E70 ARM®
Cortex®-M7 processor-based MCU scores a 1500 CoreMark.
MCU
ATMEL
With up to 2Mbytes of Flash and 384kbytes of SRAM, the device offers
tightly linked peripherals which manage events without the intervention of
the CPU. The SAM E70 series is pin-compatible with the SAM4E series.
• One Ethernet MAC (GMAC) 10/100
Mbps in MII mode and RMII with
dedicated DMA
• Two master Controller Area Networks
(MCAN) with Flexible Data Rate (CAN-FD)
• Two 4-channel 16-bit PWMs with
comple-mentary outputs
• Four 3-channel 16-bit timers/counters
• Hi-speed USB host and device with onchip high-speed PHy
• Dual 12-bit ADCs and dual 12-bit DACs
FREE
Bridge drivers deliver long
battery life and high reliability
Intersil’s HIP2103 and HIP2104 half-bridge drivers
significantly extend the battery run-time and overall product
life of multi-cell lithium-ion battery-powered devices
operating from a supply voltage between 5V and 50V.
INTERSIL
GATE
DRIVER
Featuring the industry’s lowest Sleep-mode current and a bridge phase
node pin which eliminates any kickback voltage, these half-bridge driver
devices are ideal for power tools, home automation products and
portable medical
equipment in which
battery life, longevity and
high reliability are required.
• 60V maximum bootstrap
supply voltage
• 5µA quiescent current
• Integrated bootstrap
FET (emulates the boot
diode)
FREE
BOARDS
BOARDS
See Board of the Month on page 25
Orderable Part Number: ATSAME70-XPLD
160118:
Orderable Part Number: HIP2103-4DEMO1Z
160119:
MICROCHIP
A highly-integrated PHy, the KSZ8091 uses on-chip termination resistors
for the differential pairs, integrates a low-noise regulator to supply the
1.2V core, and offers a flexible, digital I/O interface. The KSZ8091 also
provides diagnostic features to facilitate system bring-up and debugging
in production testing and in product deployment.
• Energy Efficient Ethernet (EEE) support
• Wake-On-LAN (WOL) support with
either magic packet, link status
change, or robust custom-packet
detection
• Power-down and power-saving modes
FREE
BOARDS
PC-controlled application board
12
PHY
300MHz MCU includes multiple
connectivity and analogue features
CENTRE
Orderable Part Number: KSZ8091RNA-EVAL
160117:
160120:
info@my-ftm.com
13
CIRCUIT
32-bit MCU comes with motorcontrol firmware and an on-chip QEI
NXP Semiconductors’ LPC1518 microcontroller provides the
features and functions needed to quickly and easily
implement a high-precision motor-control system.
MCU
NXP SEMICONDUCTORS
Based on the ARM® Cortex®-M3 processor, the LPC1518 has two 12-bit,
12-channel, 2Msamples/s ADCs and an on-chip quadrature encoder
interface to enable highly accurate control of both sensored and
sensorless motors. Four flexible state-configurable timer/PWM blocks
provide up to 28 PWM channels.
NXP also offers efficient motor-control firmware, easy-to-use GUI-based
tuning tools, and two new motor-control solution
kits for the LPC1500 series of MCUs.
• Up to 128kbytes of Flash
• 20kbytes of SRAM
• CAN interface
• Real-time clock
FREE
BOARDS
Orderable Part Number: FSB1500
New logic gate optocoupler offers
high data rate needed in industrial
applications
Everlight Electronics’ EL071L is a single-channel logic gate
optocoupler offering a data transmission rate of 15Mbits/s.
OPTO
EVERLIGHT
The EL071L consists of an infrared emitting diode optically coupled to a
CMOS detector IC, and is ideal for isolating circuit elements in motor
drives and other industrial applications.
The optocoupler is housed in an 8-pin 4.88mm x 5.85mm x 3.18mm
SOP package.
• 3.3V and 5V CMOS
compatibility
• 10kV/µs minimum
common-mode transient
immunity
• 3,750Vrms isolation
voltage between input
and output
• Guaranteed
performance from
-40°C to 110°C
160121:
160123:
Complete development kit for a
BLDC motor-control circuit
Space-saving optocouplers
provide 5,000V isolation
STMicroelectronics has released an STM32 motor-control kit
based on an X-NUCLEO-IHM07M1 three-phase driver board
and a NUCLEO-F302R8 32-bit microcontroller board.
Everlight has announced the introduction of two new
single-channel optocouplers intended for use in industrial
applications.
IGBT
STMICROELECTRONICS
The P-NUCLEO-IHM001 platform provides a complete control solution
for a low-voltage, three-phase brushless DC motor. The circuit uses an
L6230 driver, a member of the STSPIN family,
and an STM32F302R8 microcontroller.
The X-NUCLEO-IHM07M1 board is ready to
support various control schemes, including
closed-loop control, field-oriented
commutation or six-step control, in either
sensorless or sensor mode.
• Operating-voltage range: 8V-48V DC
• 2.8A peak output current
• Three-phase motor with maximum speed
of 19krpm
FREE
BOARDS
Orderable Part Number: P-NUCLEO-IHM001
14
CIRCUIT
CENTRE
160122:
OPTO
CENTRE
Miniature DC-DC buck converters
provide 3A continuous output
3A IPM implements complete
inverter stage in a single package
The new ISL8003x devices from Intersil are DC-DC buck
regulators, producing up to 3A of continuous output current
from a 2.7V to 5.5V supply. They offer up to 95% peak efficiency.
The STK5C4U332J-E is an Intelligent Power Module (IPM)
from ON Semiconductor intended for use as an inverter in
motor-drive systems.
INTERSIL
GATE
DRIVER
IPM
The 2mm x 2mm ISL80030, ISL80030A,
ISL80031 and ISL80031A, which are pincompatible with each other, all include
high-side PMOS and low-side NMOS
MOSFETs which have very low onresistance. As well as reducing the need
for external components, this also helps
to limit power losses.
• Typically run without cooling fans or
heat-sinks, resulting in improved
system reliability
• 35µA quiescent current
• Internal soft-start and soft-stop
FREE
ON SEMICONDUCTOR
Highly integrated and housed in a single DIP module, it implements a
complete inverter stage from a high-voltage DC input to a three-phase
IGBT output with a maximum continuous output current of ±3A. It offers
under-voltage protection, and internal boost diodes are provided for
high-side gate boost driving.
All the control-input and status-output signals from the
STK5C4U332J-E are at a low voltage compatible with microcontrollers.
• Externally accessible embedded thermistor
for substrate temperature measurement
• Built-in cross-conduction prevention
• 150°C maximum junction temperature
• 2,000Vrms isolation voltage
FREE
BOARDS
BOARDS
Orderable Part Number: ISL8003xDEMO1Z
160125:
Orderable Part Number: STK5C4U332JGEVB
160126:
EVERLIGHT
The 1Mbit/s ELS511 and 10Mbits/s ELS611 are housed in a small
6-pin SOP package measuring 6.8mm x 4.6mm. The devices help users
to save PCB space, and are ideal when implementing a size-reduction
design.
The ELS511 optocouplers consist of an infrared emitting diode,
optically coupled to a high speed photodetector transistor. A separate
connection for the photodiode bias
and output-transistor collector
increases the speed by several orders
of magnitude compared to
conventional phototransistor couplers
by reducing the base-collector
capacitance of the input transistor.
• 5,000Vrms isolation voltage between
input and output
• Guaranteed performance from
0°C to 70°C
-55°C to 100°C
160127:
160124:
15
APPLICATION
SPOTLIGHT
E N E R G y,
Wall-plug AC-DC power supplies comply with
new tighter efficiency regulations
CUI INC
CUI Inc., has announced a new line of
wall-plug AC-DC power supplies for the
US, Japanese and European markets.
The SWI6, SWI12, SWI18 and SWI24, which
have either North American or European input
blades, meet the stringent average-efficiency
and no-load power requirements mandated by
the US Department of Energy in its new level
VI standard. The aim of this standard is to
markedly lower the amount of power
consumed when the end application is not in
use or is no longer connected to the system.
Any manufacturer seeking to market an endproduct with an external adapter in the US
must comply with these new provisions by 10
February 2016.
The 6W, 12W, 18W and 24W SWI wall-plug
adapters all feature a wide universal inputvoltage range of 90-264V AC and are available
in single output voltages of 5V, 5.9V, 9V, 12V,
15V or 24V. All models meet the Level VI
standard’s no-load power-consumption
requirement of <0.1W.
Models with input blades for North American
and Japanese applications offer UL/cUL and
PSE safety approvals, while models with
European input blades come with the CE mark.
All models also satisfy the requirements of the
FCC Part 15 Class B standard for EMI/EMC.
ENERGY
INDUSTRIAL
LIGHTING
MEDICAL
AUTOMOTIVE SECURITY
CONSUMER TELECOMMS
APPLICATIONS
•
•
•
Consumer devices
Portable products
FEATURES
•
•
•
•
•
•
300,000 hours’ MTBF
±5% typical regulation
Over-voltage protection
Over-current protection
Short-circuit protection
0.25mA maximum leakage current
160128:
info@my-ftm.com
CUI’s SWI series: supplied with North American or European input blades
Light-load algorithm improves efficiency of DC-DC
buck converters
DIODES INCORPORATED
Two new synchronous DC-DC buck
converters introduced by Diodes
Incorporated offer highly efficient
operation at both full and light loads.
The 1.5A AP65101 and 2A
AP65201 achieve efficiency of
up to 97% at their maximum
continuous current. They
benefit from a low quiescent
supply current and integrated
high- and low-side switches
with low on-resistance, which
helps to reduce conduction
losses.
At the same time, the new
AP65x01 devices offer
excellent efficiency at low
loads because of an
automatic light-load algorithm,
which is triggered when the
inductor’s peak current falls
below a pre-set threshold.
16
The AP65101 and AP65201 buck converters
are intended for low-voltage regulation,
especially in distributed power architectures.
They operate from an input-voltage range of
4.5 to 16V, producing an adjustable output
voltage in a range from 0.8V up to 80% of the
input voltage.
The converters’ high level of integration and
minimal need for external components
combined with the small footprint of the
TSOT26 package provide valuable cost and
board-space savings. Current-mode operation
enables fast transient response and easy loop
stabilisation.
The device’s Enable pin has a high voltage
tolerance of up to 6V.
ENERGY
•
•
•
•
•
•
•
•
•
•
•
INDUSTRIAL
LIGHTING
MEDICAL
AUTOMOTIVE SECURITY
CONSUMER TELECOMMS
APPLICATIONS
Point-of-load power supplies
Consumer electronics devices
Set-top boxes
Coffee machines
Access points and gateways
Modems
FEATURES
500kHz switching frequency
Over-current limit
Over-voltage protection
Under-voltage lock-out
Thermal shut-down protection
160129:
info@my-ftm.com
POWER
&
POWER
MANAGEMENT
New chip clamps down on vampire power in
appliances, lighting and industrial equipment
STMICROELECTRONICS
The phenomenon of ‘vampire power’ –
the energy used by equipment which is
standing idle – could be about to end
thanks to the latest power-supply chip
from STMicroelectronics.
The new VIPer0P AC-DC power converter from
ST can drive down stand-by power consumption
to 5mW while fed by a 230V AC supply. This is
rounded to zero according to the IEC 62301
standard for household and office appliances.
The converter is also the first in the world to
provide a smart way of managing the wake-up
function. In the VIPer0P, ST has introduced a
patented smart-management capability not
offered by any other converter in the market:
because it is able to provide stand-by power
for the host microcontroller while in Idle mode,
the system may be woken via the main
appliance’s user interface, such as a
touchscreen or remote control. This means that
there is no need for a dedicated high-voltage
mechanical switch to take the appliance out of
Stand-by mode.
If a switch is used to control stand-by operation,
Idle power can be reduced even more, to
4mW. Switching can be performed at Safety
Extra-Low Voltage (SELV) levels, eliminating the
need for bulky high-voltage components.
VIPer0P may be configured as a flyback,
buck, or buck-boost switched-mode power
supply. It integrates an avalanche-rugged
power MOSFET with a breakdown voltage of
800V, giving designers a high safety margin for
superior reliability.
Other features include integrated highvoltage start-up circuitry, and a sense-FET for
energy-efficient current sensing. In addition,
VIPer0P’s self-supply design simplifies
transformer selection by eliminating the need
for an auxiliary winding.
ENERGY
•
•
•
•
•
INDUSTRIAL
LIGHTING
MEDICAL
AUTOMOTIVE SECURITY
CONSUMER TELECOMMS
APPLICATIONS
Home appliances
Home automation
Lighting
Consumer devices
FEATURES
• Current-mode PWM controller
• Over-current protection
• Jittered switching frequency reduces EMI
filter cost
• Embedded error amplifier with 1.2V
reference
• Pulse-skip protection to prevent flux
•
runaway
Embedded thermal shut-down
160130:
info@my-ftm.com
FREE
BOARDS
This evaluation kit demonstrates a 7W dual-output
(7V/-5V) flyback converter with a non-isolated topology,
based on the VIPer0P off-line converter IC.
Orderable Part Number: STEVAL-ISA174V1
ST’s VIPer0P: supports flyback, buck and buck-boost topologies
Efficient 600V MOSFETs reduce
effects of gate loop inductance
VISHAy
Vishay Intertechnology has extended its 600V E series of power MOSFETs with
new devices housed in its compact PowerPAK® 8mm x 8mm package, providing a
space-saving alternative to conventional TO-220 and TO-263 solutions.
The new Vishay Siliconix SiHH2xxN60E parts feature a large drain terminal for low thermal
resistance. In addition, the construction of the PowerPAK® 8x8 package allows one of the source
pins to be arranged as a dedicated Kelvin source connection which separates the gate-drive
return path from the main current-carrying source terminals.
This prevents the voltage drop in the high-current path attributable to gate loop inductance from
reducing the gate-drive voltage applied to the MOSFET. This in turn leads to faster switching and
better noise immunity in high-performance power-supply designs.
Based on Vishay's latest energy-efficient E series superjunction technology, the SiHHxxN60E
devices offer low on-resistance and gate charge. These values result in extremely low conduction
and switching losses, helping reduce energy consumption in power factor correction circuits,
flyback converters, and two-switch forward converters. They are designed to withstand high
energy pulses in the avalanche and commutation modes.
Part Number
Drain-source
Voltage (V)
Gate-source
Voltage (V)
Drain Current
(A) at 25°C
Maximum On- Typical Gate
resistance (Ω) Charge (nC) at
at 10V
10V
Typical Gate
Capacitance
(pF)
SiHH26N60E
600
±30
25
0.135
77
2815
SiHH21N60E
600
±30
20
0.176
55
2015
SiHH14N60E
600
±30
16
0.228
41
1416
SiHH11N60E
600
±30
11
0.339
31
1076
ENERGY
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INDUSTRIAL
LIGHTING
MEDICAL
AUTOMOTIVE SECURITY
CONSUMER TELECOMMS
APPLICATIONS
Server and telecoms power supplies
HID and fluorescent lighting ballasts
Power adaptors
Motor drives
Solar PV inverters
Induction heating
Welding equipment
FEATURES (SiHH26N60E)
• 353mJ maximum pulse avalanche energy
• 0.48°C/W junction-to-case thermal
resistance
-55°C to 150°C
160131:
info@my-ftm.com
AP65x01: valuable cost and board-space savings
17
APPLICATION
SPOTLIGHT
Highly efficient DC-DC converter steps
down 5V rails to supply points-of-load
INTERSIL
Intersil has released a highly integrated
synchronous buck regulator which
steps down 5V rails to Point-of-Load
(PoL) inputs as low as 0.6V, suitable for
FPGAs, DSPs and microprocessors.
The feature-rich ISL8018 provides up to 8A of
continuous output current from a 2.7V to 5.5V
input supply, while
offering up to 97%
efficiency and higher
integration than
competitive devices.
The 3mm x 4mm
regulator provides an
innovative SyNCIN and
SyNCOUT feature which
connects and
synchronises multiple
regulators at the same
switching frequency in a
master/slave
configuration, using a
phase-shifting time delay.
This prevents On-time overlapping and
reduces average current, ripple and inputcapacitance requirements, which serves to
reduce electro-magnetic emissions and to
improve efficiency.
The ISL8018 also provides for voltage
output margining to be set at ±10% to
compensate for output-voltage drops in
reverse-current conditions. The switching
frequency is programmable in a range from
500kHz to 4MHz, enabling the use of small
passive components for faster transient
response and board-space saving.
E N E R G y,
ENERGY
INDUSTRIAL
LIGHTING
MEDICAL
AUTOMOTIVE SECURITY
CONSUMER TELECOMMS
APPLICATIONS
• Point-of-load modules
• Power supplies for microcontrollers,
processors, FPGAs and DSPs
• DC-DC converter modules
• Portable instruments
• Test and measurement systems
• Li-ion battery-powered devices
FEATURES
• Complete converter occupies less than
97mm footprint
2
• Adjustable current limit
• Start-up with pre-bias output and internal
soft-start
• Peak-current limiting
• Hiccup-mode short-circuit protection
160132:
info@my-ftm.com
FREE
BOARDS
The ISL8018EVAL3Z evaluation board is intended for
point-of-load applications sourcing from 2.7V to 5.5V.
Orderable Part Number: ISL8018EVAL3Z
ISL8018: enables synchronisation of multiple regulators at the same frequency
New SiC power module offers hugely improved
switching performance
ROHM SEMICONDUCTOR
ROHM Semiconductor has introduced a
new 180A Silicon Carbide (SiC) power
module which benefits from the
dramatic reduction in on-resistance
provided by the double-trench structure
of its latest SiC MOSFETs.
concentrated at the base of the gate trench,
lowering the electrical stress on the device
compared to a MOSFET with a conventional
single-trench structure.
ROHM has also expanded its line-up of full
SiC power modules with the new 1,200V/300A
BSM300D12P2E, adding to the 120A/180A
devices already available. The new module is
suitable for large power supplies in industrial
equipment, providing much reduced switching
losses when compared to conventional silicon
IGBT power modules.
The BSM180D12P3C007 module is a
1,200V/180A full SiC power module which
includes third-generation SiC trench MOSFETs.
In the new MOSFETs, on-resistance is cut in
half by comparison with the previous
generation of SiC MOSFETs, which have a
planar structure. Input capacitance in the new
devices is some 35% lower.
As a result, switching losses in the new
BSM180D12P3C007 module are reduced by
42% compared to the ROHM
BSM180D12P2C101 module, which contains
planar MOSFETs.
The new double-trench structure also
enhances the long-term reliability of the new
module, since it diffuses the electric field
•
•
•
•
NXP SEMICONDUCTOR
NXP Semiconductor’s new PCA9410
and PCA9410A are highly efficient 3MHz
step-up (boost) DC-DC converters. They
convert input voltages ranging between
2.5V and 5.25V to a fixed
output voltage of 5.0V.
The output current limit is
500mA.
These 1.2mm x 1.2mm
devices are optimised for
battery-powered applications:
high conversion efficiency of
up to 94% helps to provide
for extended battery life in any
portable product design.
In addition, the devices’
switching frequency of 3MHz
enables the use of a small
inductor with a value of 1µH
or less.
The PCA9410 devices offer
tightly controlled regulation,
LIGHTING
MEDICAL
AUTOMOTIVE SECURITY
Motor drives
Inverters
Power converters
Induction heating equipment
STMicroelectronics’ ST1S15 is an
efficient step-down converter which
provides an output current of up to
500mA from an input voltage ranging
between 2.3V and 5.5V.
case temperature
-40°C to 175°C
• 2,500V AC isolation voltage (1 minute)
• 10mΩ typical on-resistance at an 18V
gate-source voltage, drain current of 180A
and a junction temperature of 25°C
providing output voltage accuracy of ±2% at
nominal and static conditions. Even over the full
current, voltage and temperature range, the
output is accurate to within ±3%.
The PCA9410 totally disconnects the input
from the output when disabled. The
PCA9410A connects the input to the output
when disabled.
6MHz, 500mA step-down converter
offers valuable system space saving
FEATURES (BSM180D12P3C007)
160133:
MANAGEMENT
ENERGY
•
•
•
•
•
•
INDUSTRIAL
LIGHTING
MEDICAL
AUTOMOTIVE SECURITY
CONSUMER TELECOMMS
APPLICATIONS
NFC terminals
FEATURES
Current-mode controller
Soft-start function
Reverse-current protection
Over-current protection
Over-temperature protection
info@my-ftm.com
PCA9410: fixed 5.0V output voltage for use in NFC terminals
CONSUMER TELECOMMS
APPLICATIONS
POWER
160134:
• 180A maximum drain current at a 60°C
SiC power modules: lower electrical stress for long lifetime
18
INDUSTRIAL
&
500mA DC-DC boost converter provides
accurate regulation
STMICROELECTRONICS
ENERGY
POWER
info@my-ftm.com
The converter’s main benefits are its high
efficiency, typically 85%, and the small
footprint of the complete power-conversion
circuit. Thanks to its high 6MHz switching
frequency, the ST1S15 can operate with small
supporting components: an inductor with a
nominal value of 470nH, and an output
capacitor of just 4.7µF. At the same time, the
ST1S15 produces a very fast and accurate
response to load
and line transients.
The converter can
operate in Pulse
Frequency
Modulation mode,
for the highest
efficiency under
light-load conditions,
or PWM mode for
tight regulation and
the best dynamic
performance.
ENERGY
INDUSTRIAL
LIGHTING
MEDICAL
AUTOMOTIVE SECURITY
CONSUMER TELECOMMS
APPLICATIONS
• Power supplies for DSPs and multimedia
•
•
•
•
•
•
•
processor cores
Mobile phones
PDAs
FEATURES
45µA quiescent current
-1.5% typical regulation
10mV output-voltage ripple in PWM mode
Short-circuit protection
Thermal protection
160135:
info@my-ftm.com
ST1S15: very small supporting components for space-saving designs
19
APPLICATION
SPOTLIGHT
E N E R G y,
Automotive buck converter provides adjustable
output voltage
ON SEMICONDUCTOR
The NCV894530 from ON Semiconductor
is a DC-DC buck converter IC intended
for use in automotive driverinformation systems that operate
from a downstream voltage rail.
It implements a synchronousrectification conversion scheme
for high efficiency.
The output voltage is externally
adjustable in a range from 0.9V to
3.3V, and can source up to 1.2A.
The converter runs at a switching
frequency of 2.1MHz, avoiding
interference with the sensitive AM
radio band, and enabling the use of
a small inductor.
The NCV894530 provides various
features expected in automotive
power systems, such as integrated
soft-start, hiccup-mode current limit,
and thermal shut-down protection.
The device can also be synchronised to an
external 2.1MHz clock signal.
The NCV894530 is available in the same
3mm x 3mm 10-pin DFN package as the dual
NCV896530, with a compatible pin-out.
ENERGY
•
•
•
INDUSTRIAL
LIGHTING
MEDICAL
AUTOMOTIVE SECURITY
APPLICATIONS
Automotive audio systems
Automotive infotainment systems
Automotive instrumentation
FEATURES
external clock
AEC-Q100 qualified
160136:
info@my-ftm.com
NCV894530 buck converter: avoids interference with AM radio band
Three new solid-state relays offer current-limit
protection and high isolation
VISHAy
Vishay Intertechnology has introduced
the first three devices in its new VOR
family of hybrid solid-state relays, which
offer noiseless switching and provide
higher reliability and a longer lifetime than
traditional electro-mechanical relays.
The new 1 Form A VOR1142 relays are notable
for their high input-to-output isolation, currentlimit protection and low power consumption.
They are normally-open single-pole, single-throw
switches. Allowing for simple customisation,
the devices feature a modular construction
consisting of a gallium aluminium arsenide
infra-red actuation control, and MOSFETs for
the switch output.
The single-channel relays are offered in three
package options:
• DIP-6: VOR1142A6
• SMD-6: VOR1142B6
• SOP-4: VOR1142M4
Devices in the SMD-6 and
DIP-6 packages have high
isolation voltage rating of
5,300V/1 minute, while
devices in the smaller
SOP-4 package are rated
for 3,750V/1 minute.
Electronically isolated,
the VOR1142 relays offer
clean, bounce-free
switching over an ambient
temperature range of -40°C
to 100°C.
The devices are VDE and UL certified to meet
the reinforced insulation requirements of most
applications.
ENERGY
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•
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•
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•
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•
•
INDUSTRIAL
LIGHTING
MEDICAL
CONSUMER TELECOMMS
APPLICATIONS
Telecoms power supplies
Metering equipment
Security equipment
Instrumentation
Industrial controls
Battery-management systems
Automatic measurement equipment
FEATURES
22Ω on-resistance
140mA load current
400V load voltage
0.25mA turn-on current
High surge capability
160137:
info@my-ftm.com
VOR family: high input-to-output isolation
20
AUTOMOTIVE SECURITY
&
POWER
MANAGEMENT
Synchronous rectification controller
ideal for LLC resonant converters
A low-power mode reduces the current
through the converter in light-load and no-load
conditions to a typical 50µA.
STMICROELECTRONICS
CONSUMER TELECOMMS
• Input voltage range: 2.7V to 5.5V
• 1mA quiescent current (no switching)
• Short-circuit protection
• Internal MOSFETs
• Automatically synchronises with an
•
POWER
The SRK2001 from STMicroelectronics is
a power controller which implements a
control scheme specifically intended for
secondary-side synchronous
rectification in LLC resonant converters.
It provides two high-current gate-drive outputs,
each capable of driving one or more N-channel
power MOSFETs. Each gate driver is controlled
separately, and an interlock logic circuit
prevents the two synchronous rectifier MOSFETs
from conducting simultaneously. When used to
implement synchronous rectification in LLC
resonant converters, the SRK2001 requires
very few external components.
The control scheme in this IC provides for
each synchronous rectifier to be switched on
as the corresponding half-winding starts
conducting, and switched off as its current falls
to zero. The innovative turn-on logic with
adaptive masking time, and the adaptive turnoff logic, have the effect of prolonging the time
during which the MOSFETs are conducting:
this eliminates the need for a circuit to
compensate for parasitic inductance.
ENERGY
•
•
•
•
INDUSTRIAL
LIGHTING
MEDICAL
AUTOMOTIVE SECURITY
CONSUMER TELECOMMS
APPLICATIONS
AC-DC adapters
High-end flat-panel TVs
Servers
FEATURES
• Operating-voltage range: 4.5V to 32V
• High voltage drain-to-source Kelvin
•
•
•
sensing for each MOSFET
Up to 500kHz switching frequency
35ns total delay at turn-off
Protection against current reversal
160138:
info@my-ftm.com
FREE
BOARDS
The STEVAL-ISA170V1 is a 150W converter tailored to a
typical specification for an all-in-one computer power
supply or a high-power adapter. This highly efficient
power supply complies with the Energy Star eligibility
criteria for adapters and computers.
Orderable Part Number: STEVAL-ISA170V1
SRK2001: two high-current gate-drive outputs
New external power supplies eliminate power risks in
home healthcare equipment
SL POWER
SL Power Electronics has introduced
its newest family of medical-grade
external power supplies, the 60W ME60
series for home healthcare equipment.
The new ME60 models meet the requirements
of the IEC 60601-1-2 Fourth edition EMC
standard. They are also approved to AAMI
ES/CSA C22.2/EN/IEC 60601-1, third edition
with two Means Of Patient Protection
(MOPP).
As well as achieving full medical
certification, the ME60 external power
supplies also address the need for high
efficiency, complying with the new US
Department of Energy’s level VI
efficiency standard.
These new models are specifically
designed for next-generation home
healthcare devices such as surgical and
patient-monitoring equipment, and
therapeutic electro-medical devices,
which require a high level of EMC, EMI
and AC-input performance.
The feature-rich power supplies use highquality electrolytic capacitors, which provide
for a product life of more than seven years. In
addition, the ME60 series power supplies are
characterised by low common-mode noise, and
high levels of ESD (to IEC 61000-4-2, level 4
standard: 8kV/15kV) and surge protection (to
IEC 61000-4-5, level 4 standard).
The ME series offers a mean time between
failure of longer than 250,000 hours. In
addition, with many input connection types
(IEC 60320 C14, C8 or C18 grounded or
ungrounded cord set) these models can be
used anywhere in the world.
Housed in an impact-resistant IP22-rated
polycarbonate enclosure, the desktop models
offer regulated output power with low ripple,
no-load power consumption of less than
0.21W, and short-circuit and thermal
protection.
The power supplies comply with the
EN55011/CISPR11, FCC Part 15.109 Class B
standard for conducted and radiated emissions
with a 6dB and 3dB margin respectively.
ENERGY
•
INDUSTRIAL
LIGHTING
MEDICAL
AUTOMOTIVE SECURITY
CONSUMER TELECOMMS
APPLICATIONS
Medical equipment
FEATURES
• Input-voltage range: 90V to 264V AC
• Operating-temperature range:
0°C to 50°C
• Three-year warranty
160139:
info@my-ftm.com
SL Power ME60: multiple input connection options
21
APPLICATION
SPOTLIGHT
E N E R G y,
Automotive designers benefit from higher power
density with new dual MOSFETs
ENERGY
LIGHTING
MEDICAL
AUTOMOTIVE SECURITY
CONSUMER TELECOMMS
APPLICATIONS
• Engine and transmission controllers
• Braking solenoid and motor drives
• Space-constrained automotive switching
NXP Semiconductors has extended its
portfolio of automotive power
MOSFETs in the LFPAK56D package,
which has a Power-SO8 footprint.
The new BUKxK line of devices increases
power density by fitting two MOSFETs into a
single, robust package without impairing
performance. In fact, the new dual MOSFETs
are fully AEC-Q101-qualified for operation at
temperatures up to 175°C.
Designers using the LFPAK56D products
can reduce the footprint-per-MOSFET-channel
by 77% compared to DPAK devices, and by
56% compared to single LFPAK56 devices.
The new dual MOSFET packages are available
with maximum voltage ratings of 30V, 40V, 60V
and 100V.
The LFPAK56D package’s copper clip
design eliminates the need for wire bonds.
INDUSTRIAL
applications
FEATURES
• High maximum drain-current ratings
• Low package resistance and inductance
• Low thermal resistance
• Footprint compatible with other Power•
•
S08 packages
Excellent tolerance of high transient
currents
100% avalanche tested
160140:
info@my-ftm.com
NXP dual-MOSFET package: operates at up to 175°C
&
POWER
MANAGEMENT
Efficient external AC-DC power supply complies with
new level VI standard
SL POWER
NXP SEMICONDUCTOR
POWER
SL Power Electronics’ new TE60 series
is a 60W external power supply which
complies with the US Department of
Energy’s new level VI efficiency standard.
The TE60’s high-performance design makes it
an ideal solution for use with handheld test and
measurement equipment and
industrial devices, in which low
noise and rugged performance
are required. It is available in
models with an output voltage of
5V, 12V, 15V, 18V, 24V or 48V.
The TE60 series also offers
strong EMC performance,
meeting the requirements of the
industrial-grade EN61000-4-X
standard, which protects end-use
equipment from harsh electrical
environments. Moreover, the TE60
series uses high-quality
electrolytic capacitors, providing
for a product life of longer than
seven years.
Low common-mode noise, level 4 ESD
protection (compliant with IEC 61000-4-2:
8kV/15kV) and surge protection (compliant with
IEC 61000-4-5: 1kV differential mode/4kV
common mode) help to ensure the highest
overall performance.
The TE60 power supplies offer regulated
output power with low ripple, no-load power
consumption of less than 0.21W, and shortcircuit and thermal protections. They meet the
requirements of the EN55011/CISPR11, FCC
Part 15.109 Class B standard for conducted
and radiated emissions with a 6dB and 3dB
margin respectively.
The TE60 features convenient IEC 60320
C14 grounded or C8 ungrounded inputconnector options which can accept input line
cords with any appropriate plug configuration.
ENERGY
•
•
INDUSTRIAL
LIGHTING
MEDICAL
AUTOMOTIVE SECURITY
CONSUMER TELECOMMS
APPLICATIONS
Test and measurement equipment
FEATURES
• Input-voltage range: 90-264V AC
• Three-year warranty
• Approved to EN/IEC/UL 60950-1,
2nd Edition, Am. 2
• <1s turn-on time at 115V AC
• >20ms hold-up time
• ±5.0% total regulation
-20°C to 50°C
160142:
info@my-ftm.com
SL Power’s TE60 series: no-load power consumption below 0.21W
Easy-to-configure controllers
simplify digital power conversion
STMICROELECTRONICS
The STNRG digital-controller family
from STMicroelectronics provides an
easy way for designers to implement
an efficient digital power-conversion
system with enhanced safety features
and generous provision of diagnostic
information.
160141:
22
info@my-ftm.com
The rugged STNRG ICs contain ST’s unique
State Machine Event Driven (SMED) highresolution PWM generator, together with an
8-bit supervisory controller core. The SMED
circuitry is a proven method for implementing
high-performance digital control in STLUX ICs
for LED lighting.
The STNRG parts also include a 32kbyte
EEPROM, 6kbyte RAM, an ADC, op amp, I2C
port and general-purpose I/Os.
Configuring the SMED calls for no specialist
software expertise, unlike the usual DSP- or
microcontroller-based approaches to digital
power control.
ENERGY
•
•
•
•
INDUSTRIAL
LIGHTING
MEDICAL
AUTOMOTIVE SECURITY
CONSUMER TELECOMMS
APPLICATIONS
High-end industrial applications
Solar-power converters
Electric-vehicle charging stations
Industrial switched-mode power supplies
FEATURES
The SMED can be triggered from the internal
timer or by an external event such as peak
current, over-current or zero crossing.
This enables a peak-current detecting buck
converter, with constant off-time set by the
timer, to operate without intervention by the core
processor. A simple proportional-integral loop
executed in the core sets the peak-current
value for output regulation.
The STNRG family is comprised of the
STNRG288A with four SMED-controlled
outputs, the STNRG328A with five SMED
outputs, and the STNRG388A with six SMED
outputs. Designers have the option to connect
two SMED cells together to generate dual
gate-drive signals with inserted dead time for
half-bridge configurations.
WORKING PARTNER ST’s STD16N60M2: page 24
• Four analogue comparators
• <50ns propagation delay
• Internal 96MHz PLL
• System, auxiliary and basic timers
• Multiple low-power modes
• UART interface
• I C master/slave interface
• Operating-temperature range:
2
-40°C to 105°C
160143:
info@my-ftm.com
FREE
BOARDS
The EVLSTNRG-170W evaluation board is intended for
evaluating the STNRG388A digital controller in off-line
power-conversion applications. The board implements a
PFC stage followed by a resonant LLC stage, supplying a
load of up to 170W.
Orderable Part Number: EVLSTNRG-170W
23
APPLICATION
SPOTLIGHT
New power MOSFETs get close to
perfect switching performance
STMICROELECTRONICS
STMicroelectronics has extended its
popular MDmesh™ M2 series of
N-channel power MOSFETs with the
introduction of a new family of devices
which offer the industry’s highest
power efficiency, especially under
light-load conditions.
Ideal for both hard- and soft-switching
topologies, including resonant topologies such
as LLC, the new devices offer extremely low
switching losses, especially under light-load
conditions.
In addition to the very low gate charge
found in all MDmesh M2 devices, the M2 EP
devices also feature up to a 20% reduction in
BOARDS
turn-off energy, thus reducing by the same
percentage the turn-off switching losses in
hard-switching converters. This reduction in
the low-current range boosts efficiency under
light-load conditions, where efficiency
reuglations are becoming increasingly
demanding.
The enhanced shape of the turn-off
waveforms leads to higher efficiency and lower
noise in resonant converters, allowing more
energy to be stored and re-used, rather than
dissipated as heat, cycle by cycle.
WORKING PARTNER ST’s STNRGxxxA: page 23
With these new devices, designers can create
switching power-conversion circuits which are
lighter and more compact, while more easily
meeting increasingly stringent energy-efficiency
targets.
The new 600V MDmesh M2 EP devices
combine ST’s proven strip layout with a new
improved vertical structure and an optimised
diffusion process to produce performance
close to that of the ideal switch: they combine
very low on-resistance and the lowest known
turn-off switching losses.
The MDmesh M2 EP MOSFETs are tailored
for very high-frequency converters switching at
higher than 150kHz.
•
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•
•
•
•
•
•
Vishay Intertechnology has introduced a
new series of ENYCAP™ hybrid energystorage capacitors with low 2.5mm
profiles which feature industry-high
energy density of 13Ws/g.
The Vishay BCcomponents
196 HVC ENyCAP series is
available in versions with up
to six cells and capacitance
values from 4F to 90F.
Stacked through-hole,
surface-mount flat and layflat configurations feature
pins, tabs, and connectors.
Voltage ratings start at 1.4V
for a single-cell configuration,
and also include 2.8V, 4.2V,
5.6V, 7.0V and 8.4V versions
(with multiple cells).
Its unique technology,
which requires no cell
balancing, provides soft
charging characteristics.
24
LIGHTING
The low leakage current after 24 hours is in a
range from 0.03mA to 0.5mA.
For technical evaluation, Vishay provides a
complete development kit. This demonstrates a
complete 20V/1A buck DC-DC and back-up
regulator with integrated ENyCAP charger,
charge-current monitor, integrated timer and
deep-discharge load-switch protection.
The devices offer a useful life of 1,000 hours
at 85°C.
MEDICAL
AUTOMOTIVE SECURITY
Board with multiple connection options
supports latest Atmel SAM x70 MCUs
The Atmel® | SMART™ SAM E70 Xplained
evaluation kit is ideal for evaluating and
prototyping with the Atmel SAM S70 and
SAM E70 microcontrollers, which are
based on the ARM® Cortex®-M7
processor core.
Servers
Laptops
Telecoms equipment
Consumer devices
FEATURES
Extremely low gate charge
Excellent output-capacitance profile
100% avalanche-tested
Zener-protected
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ATSAME70Q21 MCU, which is housed in a
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The ATSAME70Q21 with a floating point unit
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• One Reset and one unassigned push
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component count to a minimum.
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frequency, which ranges from 200kHz to
2MHz, gives the designer the flexibility to
optimise the balance between inductor size,
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Both the ISL8117EVAL1Z and ISL8117EVAL2Z
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25
TECHNICAL
TECHNICAL
VIEW
VIEW
How to reduce the total cost of a power circuit with the use of SiC components
By Erich Niklas
Regional Sales Manager (Central Europe), Future Power Solutions
READ THIS ARTICLE TO FIND OUT ABOUT
Silicon Carbide (SiC), a wide bandgap material with markedly
superior characteristics to silicon in high-voltage circuits, has
struggled to gain widespread market acceptance. In some
ways, this is surprising: SiC components – diodes and
MOSFETs – are ideal for high-voltage applications in which
energy efficiency is a critical parameter.
For example, in solar inverters switching losses may be reduced by
more than 30% through the use of SiC MOSFETs. Solar inverters with
both SiC MOSFETs and diodes have been shown to be capable of
achieving overall system efficiency of greater than 99%.
Similar efficiency benefits can be achieved in other applications that
require high blocking voltages in combination with fast, efficient
switching: industrial motor drives, DC power systems in data centres,
power factor correction circuits, and high-frequency DC-DC converters
in industrial, computing and communications power systems. Benefitting
from low switching losses, SiC MOSFETs and diodes can enable
operation at switching frequencies up to four times higher than those
using conventional silicon IGBTs.
So why are SiC components not in widespread use in these
applications? The answer is simple: component cost. An expensive
manufacturing process means that the cost of a SiC MOSFET is far
higher than that of a comparable silicon component. Simply replacing a
silicon MOSFET or IGBT in a conventional power circuit with a SiC
MOSFET normally makes little financial sense.
But this is the wrong way to approach power-system design with SiC
components. In fact, the proper use of SiC components can result in
lower total system costs, despite the relatively high cost of the SiC
components. But if design engineers are to realise cost savings from the
use of SiC technology, they must thoroughly review and modify their
existing circuits, and possibly even abandon an existing design entirely
and start afresh. This article shows why.
The cost contributors in a high-voltage power circuit
The reason the power-system designer should not focus on a simple
cost comparison of silicon and SiC components is that these
components make up only a small proportion of the total system cost. In
fact, the main cost contributors to a high-voltage circuit are:
• Power semiconductors
• Heat-sink
• Transformers
• Inductors
• Capacitors
• PCB
In addition, in some end-product types there might be noticeable costs
associated with transport or handling of the end-product. In these
cases, the weight and size of the power circuit can have a marked
impact on the manufacturer’s costs.
When a circuit is designed from the start with the intention of using
SiC MOSFETs and diodes, savings can be made in every one of the
cost contributors listed above. As a result, design teams that have
designed new power circuits to take full advantage of SiC technology
Fig. 1: Kollmorgen’s SiC inverter prototype has no need for an expensive liquid cooling mechanism
(Source: Kollmorgen)
26
• Why the use of expensive SiC power components can result in
lower system costs
• Examples of design implementations which have realised
performance and cost improvements by replacing silicon IGBTs with
SiC MOSFETs
• The prospects for wider adoption of SiC power components as their
prices fall
are gaining a distinct competitive edge. For example, motor-system
manufacturer Kollmorgen (www.kollmorgen.com) has developed a
prototype of a new SiC-based inverter, as shown in Figure 1, for use in
heavy-duty Hybrid Electric Vehicles (HEVs) such as city buses.
Specified for operation at 750V DC and 400Arms, the SiC version of
the inverter offers the following advantages over the equivalent product
that uses silicon IGBTs:
• 1% superior system efficiency, the equivalent in a typical city bus to an
annual reduction in fuel consumption of between 600 litres and 1,000
litres of diesel fuel
• A much cheaper thermal design using air cooling rather than water
cooling
• Higher-frequency switching, enabling the use of smaller passive
components
According to Lux Research (www.luxresearchinc.com), the savings in
fully Electric Vehicles (EVs) look equally promising. Attempts to extend
the performance of silicon devices in high-voltage applications are hitting
the physical limits of the material’s characteristics. In an August 2014
paper, the research
company found that the use
of Wide Bandgap (WBG)
materials such as SiC offers
economic benefits because
of the large batteries in EVs,
as shown in Figure 2.
‘Efficient power
electronics is key to a
smaller battery size, which
in turn has a positive
cascading impact on wiring,
Fig. 2: The dramatic power efficiency gains offered by SiC
thermal management,
devices will help to slash the cost of electric and hybrid
packaging and weight of
electric vehicles. (Source: Lux Research)
electric vehicles,’ said Pallavi
Madakasira, an analyst at Lux Research and the lead author of the
report titled Silicon vs WBG: Demystifying the Prospects of GaN and SiC
in the Electrified Vehicle Market.
On the Tesla Model S for example, a 20% reduction in power use can
make the battery system $6,000 cheaper – some 8% of the vehicle’s
total cost.
According to Lux Research, a power saving of just 2% makes the use
of SiC diodes essential in EVs, on the assumption that battery costs fall
below $250/kWh. For plug-in HEVs, the threshold for the introduction of
SiC components is a
5% power saving.
To illustrate the way
that SiC components
enable cost savings
across the whole of a
power circuit, let us
study an example, an
application that has
been developed by a
Fig. 3: Architecture of the STMicroelectronics 5kW boost-converter
circuit (Source: STMicroelectronics)
research team at STMicroelectronics. The prototype developed by ST is
a 5kW boost converter, a functional block in a solar inverter, as shown in
Figure 3. The prototype uses the following SiC components:
• The SCT30N120 is a 1,200V SiC N-channel power MOSFET. It is
rated for operation across a junction temperature range of -55°C to
200°C. On-resistance is rated at a typical 80mΩ.
• Two STPSC6H12 1,200V SiC Schottky diodes functioning as a
rectifier.
The system is designed to boost a 400-600V DC input to 800V DC in
continuous-current mode, supporting
an output power of 5kW. The SiC
MOSFET’s maximum junctiontemperature rating is some 25°C
higher than that of a comparable
silicon IGBT, which means that a
smaller heat-sink can be used, as
shown in Figure 4.
The boost inductor is rated for a
maximum 25A current, with low
parasitic capacitance and a 25A
saturation current.
Fig. 4: A SiC MOSFET requires a smaller
STMicroelectronics evaluated
heat-sink than the equivalent Si IGBT
comparable systems at switching
(Source: STMicroelectronics)
frequencies of 25kHz (the limit of a
silicon IGBT’s performance in this application) and 100kHz (with a SiC
MOSFET), to examine the trade-off between cost and performance.
Increasing the switching frequency allows for the use of a smaller
inductor and/or a smaller output capacitor. Technically, given that the
maximum current ripple occurs at Vin=Vout/2, the higher the switching
frequency the lower the inductance required, according to the formula:
Figure 5 shows the reduction in the size and weight of the inductor
achieved by operating at the high 100kHz frequency supported by the
fast SiC components.
Fig. 5: Size and weight comparison of inductor required when switching at 25kHz and 100kHz (Source:
STMicroelectronics)
A summary of the superior performance achieved by the SiC-based
design is shown in Figure 6: with a SiC MOSFET, the system switches
four times faster and offers higher efficiency, and uses smaller and lighter
magnetics and heat-sink.
Even more
interesting,
Ferrite Core Ferrite Core
Heat-sink
ƞ% @
Inductor
Inductor
Parameters
Figure 7’s cost
Rth (°C/W)
5kW
Volume (L) Weight (kg)
comparison
SiC MOSFET
shows that,
98.17
0.78
1.35
0.65
@ 100kHz
even though
IGBT @ 25kHz 98.13
1.45
3.4
0.53
the SiC
Fig. 6: Comparison of performance and component requirements of SiC and
MOSFET is
IGBT-based designs (Source: STMicroelectronics)
nine times
more expensive than a silicon IGBT, the total system cost is lower in a
design that takes full advantage of the SiC MOSFET’s superior
characteristics. This is because the inductor, capacitor and heat-sink are
expensive components. Moreover, the benefits of the reduction in weight
and size provided in a
design based on SiC
components come in
Inductor
58%
45%
addition to the bill-ofCapacitor
15%
9%
materials cost savings.
Heatsink
Another example of
17%
8%
IGBT/SiC MOSFET
the benefits that SiC
4%
32%
components will bring
SiC Diode
6%
6%
to the fast growing EV
Efficiency
98.6%
99.1%
market was presented
Normalised Total
100%
95%
by car manufacturer
Fig. 7: SiC MOSFET v Si IGBT cost comparison for a 5kW
converter design, showing normalised percentage of BoM cost
Toyota at the
contributed by each component type (Source: STMicroelectronics)
Automotive Engineering
Exposition (May 2014, Japan). Toyota estimates that 20% of total
electrical power losses in HEVs are attributable to power
semiconductors. Improving the efficiency of the power semiconductors
directly reduces fuel consumption.
Toyota has set a goal of achieving a 10% improvement in HEV fuel
efficiency: SiC MOSFETs supplied by Microsemi are now playing a role in
its strategy for achieving this goal.
Results from development work carried out by Toyota show that
power losses when using SiC MOSFETs are around 10% of the power
loss suffered by Si IGBTs. In addition, the switching frequency can be
increased by a factor of ten, which enables a reduction in the size of the
power control unit of around 80%.
There is a commercial as well as an engineering benefit to the use of
SiC MOSFETs in HEV power supplies. Toyota presented a cost
comparison for a three-phase 225kW inverter for an electric vehicle
using a 350V battery. Toyota’s current solution uses 84 Si IGBTs. The
goal was to replace these with SiC MOSFETs in order to improve system
performance at a total cost no higher than that of the current design.
The design uses 60 SiC MOSFETs supplied by Microsemi, rated for a
maximum voltage of 700V and with typical on-resistance of 40mΩ. It
reduces the cost of the battery by 6%, and the magnetics by almost
50%, while the passives and other components have almost the same
cost as the IGBT solution. Although the cost of the semiconductors is
three times higher than that of the IGBT design, the total system cost is
5% lower.
And, as Figure 8
shows, the SiC
MOSFET system has a
particularly marked
efficiency advantage
over the IGBT system
at low loads.
4kW Boost Converter
Vin= 600V,
Vout = 800V
IGBT +
SiC MOSFET +
SiC Diode
SiC Diode
fsw = 25kHz
fsw = 75kHz
A fast-changing
market
The examples
Fig. 8: Efficiency comparison in HEV inverter, SiC MOSFET vs Si IGBT
described above
suggest that the
cost/performance battle between SiC MOSFETs and IGBTs is finely
balanced today. As the months go by, however, the balance will continue
to tip further and further in the SiC components’ favour, because of
expected steep falls in the price of SiC MOSFETs. This price drop is due
to increased competition among wafer suppliers and the transition to a
6” wafer fabrication process.
As the basic price of SiC components falls, the benefits to be gained
from designing systems around them become even more attractive. For
manufacturers of solar inverters, as well as many other types of highpower equipment, a tipping point might now have been reached, at
which silicon carbide becomes the favoured material for switching
components.
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Energy, Power and Power Management

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