ASDAM 2014 Sunday 19 October 2014 Monday 20

ASDAM 2014 Sunday 19 October 2014 Monday 20

ASDAM 2014
10th International Conference on Advanced
Semiconductor Devices and Microsystems
th
Sunday 19 October 2014
15:00
20:00
Registration
19:00
22:00
Welcome Party
th
Monday 20 October 2014
th
Tuesday 21 October 2014
th
Wednesday 22 October 2014
8:00
9:00
Registration
9:00
9:20
Introduction &
Welcome
9:20
10:00
Invited Talk 1
9:00
9:40
Invited Talk 4
9:00
9:40
Invited Talk 7
10:00
11:00
Sensors &
Microsystems 1
9:40
11:00
GaN Based Structures
& Devices 3
9:40
11:00
Solar cells
11:00
11:20
Coffee Break
11:00
11:20
Coffee Break
11:00
11:20
Coffee Break
11:20
12:00
Invited Talk 2
11:20
12:00
Invited Talk 5
12:00
13:00
Organic electronics
12:00
13:00
Advanced Devices
11:20
13:00
Photovoltaics – LED’s
13:00
14:00
Lunch
13:00
14:00
Lunch
13:00
14:00
Lunch
14:00
14:50
Poster Session 1
Technology &
Devices
14:00
14:50
Poster Session 2
Characterization &
Sensors
14:00
15:40
SMArt System
Co-design - Special
session of
7 FP project SMAC
15:00
15:40
Invited Talk 3
15:00
15:40
Invited Talk 6
15:40
Closing Address
15:40
16:40
GaN Based
Structures & Devices
1
15:40
16:40
Sensors &
Microsystems 2
16:40
17:00
Coffee Break
16:40
17:00
Coffee Break
17:00
19:00
GaN Based
Structures & Devices
2
17:00
19:00
Characterization &
Modeling
19:30
Dinner & Wine
Testing
19:30
Conference Dinner
Monday 20th October 2014
Invited Talk 1
9:20 - 10:00
Functional Materials for MEMS Fabrication at C2MI’s Microsystems
Integration Lab
Luc Ouellet
Sensors & Microsystems 1
10:00 - 10:20 Energy Harvesting Using Thermoelectric Microgenerators: A Critical Analysis
G. Wachutka
10:20 - 10:40 Influence of temperature on the sensitivity of the AlGaN/GaN C-HEMT-based
piezoelectric pressure sensor
J. Dzuba, G. Vanko, I. Ryger, M. Vallo, V. Kutis, T. Lalinsky
10:40 - 11:00 Temperature sensor on flexible substrate patterned by laser ablation
M. D. Dankoco , E. Benevent, E. Bergeret, L. Gallais, M. Bendahan
Invited Talk 2
11:20 - 12:00 Organic semiconductor based electronics
M. Weis
Organic Electronics
12:00 - 12:20 Analysis on carrier trapping mechanism in organic devices by charge
modulation spectroscopy and nonlinear optical polarization
E. Lim
12:20 - 12:40 Probing and Modelling of Carrier Transport in Organic Devices by Optical
Second Harmonic Generation
M. Iwamoto, T. Manaka, D. Taguchi
12:40 - 13:00 Technology of conductive polymer PEDOT:PSS films
J. Nevrela, M. Micjan, M. Novota, S. Flickyngerova, J. Kovac Jr, M. Pavuk, P.
Juhasz, J. Jakabovic, M. Weis
Poster Session 1 Technology & Devices
1.1.
SiC graphene FET with polydimethylglutarimide as a gate dielectric layer
J. Nahlik, Z. Soban, J. Voves, V. Jurka, P. Vasek
1.2.
Electrical characterization of diamond films deposited in nitrogen and oxygen
containing gas mixture
M. Mikolasek, M. Vojs, M. Varga, O. Babchenko, T. Izak, M. Marton, A. Kromka, L.
Harmatha
1.3.
Radiation Hardness of 4H-SiC Structures
A. Kosa, J. Benkovska, L. Stuchlikova, D. Buc, F. Dubecky, L. Harmatha
1.4.
Electrical properties of semi-insulating GaAs irradiated with 5 MeV electrons
P. Bohacek, B. Zatko, A. Sagatova, P. Hybler, M. Sekacova
1.5.
M/SI-GaAs/M diode: Role of the metal contact in electrical transport, particle and photon detection
F. Dubecky, B. Zatko, G. Vanko, M. Dubecky, P. Hubik, J. Oswald, D. Kindl, E.
Gombia, M. Micusik, J. Kovac, A. Sagatova, V. Necas
1.6.
Transition from amorphous silicon to silicon nitride in thin films deposited by
PECVD technology from silane diluted with nitrogen
P. Sutta, P. Calta, J. Mullerova, M. Netrvalova, J. Savkova, V. Vavrunkova
1.7.
Development issue in mushroom-like profile fabrication in EBL double step
exposure method
K. Indykiewicz, B. Paszkiewicz, R. Paszkiewicz
1.8.
Electron irradiation effects on the characteristics of GaAs detectors
A. Sagatova, B. Zatko, K. Sedlackova, P. Hybler, V. Necas
1.9.
Analysis of detection properties of particle detectors based on 4H-SiC high
quality epitaxial layer
B. Zatko, F. Dubecky, K. Sedlackova, A. Sagatova, L. Ryc, P. Bohacek, M.
Sekacova, V. Necas
1.10.
Determination of elastic properties of surface layers and coatings
M. Sevcik, M. Husak
1.11.
Precise etching of AlGaN/GaN HEMT structures with Cl2/BCl3/Ar plasma
J. Gryglewicz, R. Paszkiewicz, W. Macherzynski, M. Wosko
1.12.
Application of real time in-situ interferometry for the observation of GaN/Si
MOVPE growth process
T. Szymanski, M. Wosko, B. Paszkiewicz, R. Paszkiewicz
1.13.
Different buffer aproaches for AlGaN/GaN heterostructures epitaxy on Si(111)
substrates
M. Wosko, B. Paszkiewicz, T. Szymanski, R. Paszkiewicz
1.14.
III-nitride nano-LEDs for single photon lithography
St. Trellenkamp, M. Mikulics, Y. C. Arango, A. Winden, R. Adam, J. Moers, M.
Marso, D. Grutzmacher, H. Hardtdegen
1.15.
Electromagnetic energy absorption potential in the GHz frequency range of
SiC films prepared by PECVD technology
J. Huran
1.16.
Ferroelectric polymer films for flexible memory devices
M. Micjan, J. Nevrela, M. Novota, S. Flickyngerova, P. Juhasz, J. Uhrik, J.
Jakabovic, M. Weis
1.17.
New phenyl-based organic semiconductor material for electronic devices
M. Novota, M. Micjan, J. Nevrela, S. Flickyngerova, P. Juhasz, R. Misicak, M.
Putala, J. Jakabovic, M. Weis
1.18
Novel Double-Level-Gate Technology
A. Fox, M. Mikulics, H. Hardtdegen, St. Trellenkamp, Y. C. Arango, D.
Grutzmacher, Z. Sofer, D. Gregusova, J. Novak, P. Kordos , M. Marso
Invited Talk 3
15:00 - 15:40 Novel GaN-based transistors using polarization engineering
A. Vescan
GaN Based Structures & Devices 1
15:40 - 16:00 Design of GaN Trig-Gate HEMTs
M. Alsharef, R. Granzner, E. Ture1, R. Quay, J. Racko, J. Breza, and F. Schwierz
16:00- 16:20 Modeling and characterization of power InAlN/GaN HEMTs supported by 3-D
electrothermal simulation
M. Molnar, D. Donoval, A. Chvala, J. Marek, P. Pribytny
16:20 - 16:40 AlN/GaN/AlN double heterostructures with thin AlN top barriers
Ch. Zervos, A. Bairamis, A. Adikimenakis, A. Kostopoulos, M. Kayampaki, K.
Tsagaraki, G. Konstantidis, A. Georgakilas
GaN Based Structures & Devices 2
17:00 - 17:20 Impact of off-state stress on electrical parameters of AlGaN/GaN HEMTs
P. Benko, M. Florovic, J. Kovac, P. Kordos, L. Harmatha
17:20 - 17:40 Impact of the buffer structure on trapping characteristics of normally-off pGaN/AlGaN/GaN HEMTs for power switching applications
M. Tapajna, L. Valik, P. Kotara, R. Zhytnytska, F. Brunner, O. Hilt, E. B. Treidel, J.
Wuerfl, J. Kuzmik
17:40 - 18:00 Investigation of defects in GaN HFET structures by electroluminescence
J. Priesol, A. Satka, L. Sladek, D. Donoval
18:00 - 18:20 Different polarities of InN (0001) heterostructures on Si (111) substrates
A. Bairamis, A. Adikimenakis, A.O. Ajagunna, Th. Kehagias, G.P. Dimitrakopulos,
J. Kioseoglou, Ph. Komninou, J. Kuzmik, A. Georgakilas
18:20 -18:40 Gate leakage reduction of AlGaN/GaN MOSHFET with HfO2 prepared by ALD
R. Stoklas, D. Gregusova, M. Blaho, K. Cico, K. Frohlich, J. Novak, P. Kordos
18:40 - 19:00 GaN HEMTs on Si Substrate with High Cutoff Frequency
W. Jatal, K. Tonisch, U. Baumann, F. Schwierz, J. Pezoldt
Tuesday 21th October 2014
Invited Talk 4
9:00 - 9:40
GaN transistor instabilities and reliability
M. Uren
GaN Based Structures & Devices 3
9:40 - 10:00
Time Resolved EBIC Study of InAlN/GaN HFETs
A. Satka et al.
10:00 - 10:20 Analysis of Time Dependent Current Collapse in AlGaN/GaN HEMTs
R. Maeta, H. Tokuda, M. Kuzuhara
10:20 - 10:40 Modelling and Optimization of GaN Capped HEMTs
S. Faramehr, P. Igic, K. Kalna
10:40 - 11:00 Influence of geometry on switching transients of InAlN/GaN HEMT.
J. Marek, A. Satka, D. Donoval, M. Molnar, J. Priesol, A. Chvala
Invited Talk 5
11:20 - 12:00
Energy efficient computing with tunnel FETs
A. Ionescu
Advanced Devices
12:00 - 12:20 Simulative Study on Quantum Modelling for Submicrometer Highly-strained
In0.8Ga0.2As/AlAs Double Barrier Resonant Tunnelling Diode
W. M. Jubadi, M. A. Zawawi, M. Missous
12:20 - 12:40 A Novel Area-Efficient Large-Periphery FD-SOI MOS Device Architecture for
the Higher Powers and Efficiency
A. H. Tarakji
12:40 - 13:00 Statistical Analysis of Active and Passive RF Devices
M. Pak, A. E. Yarimbiyik, G. Dundar, F. Fernandez
Poster Session 2 Characterization & Sensors
2.1.
Electrical transport characteristics of (Mo/Au)/AlGaN/GaN/Si Schottky diodes
as a function of temperature
H. Mosbahi
2.2.
Model of Coupled Defect Level Recombination with Participation of
Multiphonons
J. Racko, R. Granzner, P. Benko, M. Mikolášek, L. Harmatha, M. Kittler,
F. Schwierz and J. Breza
2.3.
Defects in Schottky Diodes Based on AlGaN/GaN Heterostructures
L. Stuchlikova, A. Kosa, J. Benkovska, P. Benko, L. Harmatha, J. Kovac, D.
Donoval
2.4.
DLTS Study of Electrically Active Defects in Triple Quantum Well
InGaAsN/GaAs Heterostructures
J. Jakus, L. Stuchlikova, A. Kosa, L. Harmatha, J. Kovac, B. Ściana, W.
Dawidowski, D. Radziewicz, D. Pucicki, M. Tłaczała
2.5
Degradation process in AlGaN/GaN HEMTs under high drain-bias off-state
stress
M. Florovic, J. Kovac, P. Benko, P. Kordos, J. Skriniarova, D. Donoval, T. Lalinsky,
G. Vanko
2.6.
Characterization of Gas Sensor with Polyaniline Film
J. Kroutil, A. Laposa, J. Nahlik, A. Boura, M. Husak
2.7.
Simulation of Distributed MOEMS for Smart Environments
V. Shakhnov, L. Zinchenko, I. Kosolapov
2.8.
Quality Water Analyzer
M. Husak, A. Laposa, P. Kulha, P. Nepras
2.9.
Translator with Magnetic Levitation
F. Puci, M. Husak
2.10.
Precise beat frequency evaluation circuit for multi-oscillators QCM gas
detectors
A. Boura, J. Kroutil
2.11.
Low and high frequency capacitance of insulator/AlGaN/GaN heterostructure
J. Osvald
2.12.
Energy harvesting in 3D
V. Janicek
2.13.
Calculation of accurate channel spacing of an Arrayed Waveguide Grating
optical multiplexer/demultiplexer
E. Hodzic, D. Seyringer, F. Uherek, J. Chovan, A. Kuzma
2.14.
Design of Low Losse 1x64 Y- branch Splitter Having Symmetric Splitting
Ratio
C. Burtscher, D. Seyringer, F. Uherek, J. Chovan, A. Kuzma
2.15.
Methods for lifetime characterization of concentric circuit boards
J. Formanek, J. Jakovenko
2.16.
Analysis of Interfering Signals in Structures of Integrated Circuits
J. Novak, J. Foit
2.17.
Modeling of geometrically scalable integrated finger diodes
V. Kosel, F. Roger, K. Molnar, W. Posch, E. Seebacher
2.18
Special-purpose oscillators
J. Foit, M. Husak
Invited Talk 6
15:00 - 15:40 The characterization and use of nanostructured films in sensing applications
O. N. De Oliveira Jr.
Sensors & Microsystems 2
15:40 - 16:00 Sensitivity and long term stability of -Fe2O3 and CoFe2O4 nanoparticle gas
sensors for NO2, CO and acetone sensing - a comparative study
S. Luby, M. Jergel, M. Benkovicova, P. Siffalovic, J. Ivanco, K. Vegso, E. Majkova,
R. Rella, M. G. Manera, S. Capone
16:00 - 16:20 Complex measurement of human physiology using a miniature wireless
sensors
E. Vavrinsky, D. Moskalova, J. Mihalov, M. Donoval, M. Daricek, V. Stopjakova
16:20 - 16:40 Using of laser ablation technique in the processing technology of GaN/SiC
based MEMS for extreme conditions
J. Zehetner, G. Vanko, P. Choleva, J. Dzuba, I. Ryger, T. Lalinsky
Characterization & Modeling
17:00 - 17:20 AlGaN/GaN micromembranes with diamond coating for high electron mobility
transistors operated at high temperatures
G. Vanko, M. Vojs, P. Choleva, M. Marton, I. Ryger, J. Dzuba, T. Lalinsky
17:20 - 17:40 Modelling Heating Effects due to Current Crowding in ZnO Nanowires with
End-Bonded Metal Contacts
O. Kryvchenkova, K. Kalna, R. J. Cobley
17:40 - 18:00 Material and electrical properties of N-polar (GaN)/InN surfaces.
K. Cico, A. Adikimenakis, M. Micusik, A. Georgakilas, J. Kuzmik
18:00 - 18:20 Templates for highly ordered SiGe-QD arrays for single photon detection
J. Moers, N. P. Stepina, St. Trellenkamp, D. Grutzmacher
18:20 - 18:40 Application of TCAD in a Development of a Fully Complementary Vertical
PNP IC Technology for High Performance Analog Applications
R. Spetik, S. Kapsia, J. Pjencak
18:40 - 19:00 Total internal reflection ellipsometry in the investigation of phenomena at
surfaces and interfaces for biosensing
J. Chlpik, K. Bombarova, J. Cirak
Wendesday 22th October 2014
Invited Talk 7
09:00 - 09:40 Photonic and plasmonic structures for applications in solar cells
M. Zeman
Solar cells
09:40 - 10:00 Spectral Analysis of InxGa1-xN/GaN Quantum Well Structures for III-nitride
based Solar Cells
D. O’Mahony, P. J. Parbrook, B. Corbett, J. Kovac, J. Kovac jr., M. Florovic, A.
Vincze
10:00 - 10:20 Determination of defect states in P3HT material for solar cell application
P. Juhasz, L. Stuchlikova, M. Micjan, L. Harmatha, J. Jakabovic, M. Weis
10:20 - 10:40 Opto-electrical approaches to make high efficiency ultra-thin crystalline
silicon solar cells
A. Ingenito, O. Isabella , M. Zeman
10:40 - 11:00 Planar waveguide based structures for integrated optics on PDMS
D. Jandura, D. Pudis
Photovoltaics - LED's
11:20 - 11:40 Influence of Geometry on the Directionality of Light Emission of Nano-rod
Array Vertical Light Emitting Diodes
S.A. Fox, S. Lis, S.E.J. O'Kane, D.W.E. Allsopp, J. Sarma
11:40 - 12:00 Investigation of Optical Stability Issues with Embedded Semiconductor
Quantum Dots used as Colour Conversion Material in LED Lighting
Applications
D. Schmidmayr, J. Zehetner
12:00 - 12:20 InGaN nano LEDs for energy saving optoelectronics
M. Marso, H. Hardtdegen, A. Winden, Y. C. Arango, Z. Sofer, D. Grutzmacher, M.
Mikulics
12:20 - 12:40 Detailed optical and electrical characterisation of green – orange InGaN/GaN
LEDs grown by MOVPE
K. Cavanagh, C. Liu, T. Martin, M. A. Hopkins, S. Sivaraya, D. W. E. Allsopp
12:40 - 13:00 LEDs with polydimethylsiloxane 2D PhC membrane in the surface
D. Pudis, L. Suslik, P. Gaso, S. Slabeyciusova, J. Kovac, P. Hronec, R. Nolte, P.
Schaaf
SMArt System Co-design - Special session of 7 FP project SMAC
14:00 - 14:20 Homogenous Simulation: the Effective Integration Solution for Smart
Systems
F. Fummi, M. Lora, D. Trachanis, J. V. Hese, S. Vinco
14:20 - 14:40 Advanced methodology for fast 3-D TCAD electrothermal simulation of power
devices
A. Chvala, D. Donoval, J. Marek, P. Pribytny, M. Molnar
14:40 - 15:00 A MEMS Design Methodology for Model-Order Reduction, based on Highorder Parametric Elements
A. Sanginario, G. Schropfer, S. Zerbini, M. Ekwinska, R. Houlihan, D. Demarchi
15:00 - 15:20 Design and simulation of an integrated optical CMOS heart rate sensor
D. He, S. P. Morgan, D. Trachanis, J. V. Hese, D. Drogoudis, F. Fummi, F.
Stefanni, V. Guarnieri, B. R. H. Gill
15:20 - 15:40 Simulation Methodology for 3-D TCAD Electrophysical and Optical Analysis
of Solar Cell
P. Pribytny, A. Chvala, M. Molnar, D. Donoval, J. Marek, M. Mikolasek
Closing Address 15:40