CNES/ESA Radiation Effects Final Presentation Days

CNES/ESA Radiation Effects Final Presentation Days
March 9 & 10, 2015
Preliminary Program (Monday, March 09, 2015)
08:30
Registration
09:00
Introduction
09:10
Session : Facilities, Dosimetry and hardenning techniques (Françoise Bezerra)
MIRAGE: a new proton facility for the study of direct ionization in sub-100nm
technologies
A new laser facility at CNES for the study of SEE behavior of electronic devices
BET-C: The new portable Beam Evaluation Tool from CNES.
Shielding optimization: methodology at system level
10:30
Break
10:50
Session : Radiation effects on digital ICs (Robert Ecoffet)
Heavy-Ion and Total Ionizing Dose performance of different memory technologies
(Flash, DDR3, MRAM and SRAM)
Experimental Characterization and Simulation of Electron-induced SEU in 45nm CMOS
Technology
A Calculation Method for Proton Direct Ionization Induced SEU Rate from Experimental
Data: Application to a Commercial 45nm FPGA
Evidence of destructive Single Event Latch-up on various devices using TILU2 test
system
TBC
V. Ferlet-Cavrois
and F. Bezerra
ESA and CNES
Sophie Duzellier
ONERA
Kevin Sanchez
CNES
Françoise Bezerra
CNES
Jean-Charles Thomas TRAD
Frederic Tilhac
HIREX
Anne Samaras
TRAD
Nicolas Sukhaseum
TRAD
Françoise Bezerra
CNES
TBC
TBC
12:30
Lunch
14:00
Session: Radiation effects on optoelectronics (Mathieu Boutillier-Olivier Gilard)
Cryogenic radiations facility (80K): validation of CNES cryostat ON UCL HIF facility
Single Event Upset Sensitivity of D-Latch in Infrared Image Sensors for Low
Temperature Applications
Low temperature total dose irradiation of different transistor topologies for infrared
applications
Commercial Light Emitting Diodes sensitivity to protons radiations
TBC
Radiation effects on digital CMOS image sensors using micro lenses and color filters
16:00
Break
16:20
Session: ESA R&D activities, Cubesat and CODES (Ali Zadeh)
ESA RHA R&D activities overview
Radiation Effects Study by SEE Experiment on Cubesat
COmponent DEgradation Simulation (CODES) framework
17:05
CNES
ONERA
Thierry Nuns
ONERA
Mathieu Boutillier
TBC
Toulemont Arthur
CNES
TBC
CNES
Ali Zadeh
Viyas Gupta
Patrícia Gonçalves
ESA
U. Montpellier 2
LIP
Session: GaAs power devices and Mixed signal technologies (Cesar Boatella Polo)
Radiation Characterization of GaAs power devices in support of European Radiation
Hardness
Radiation characterization of RT analogue / mixed signal technology
17:35
Bernard Baradat Mathieu Boutillier
Laurent Artola
End of day 1
J.Luc. Muraro, J.Louis TAS
Cazaux , R. Marec
TBD
Alter, IMEC
CNES/ESA Radiation Effects Final Presentation Days
March 9 & 10, 2015
Preliminary Program (Tuesday, March 10, 2015)
08:30 Introduction
V. Ferlet-Cavrois and F.
Bezerra
ESA and CNES
S. Gerardin, M. Bagatin, A.
Paccagnella
K. Grürmann, M. Herrmann,
H. Schmidt
Univ. Padova
Adrian Evans
Maximilien Glorieux, Adrian
Evans
Aminata Carvalho, Christian
Binois
iRoC
iRoC
Peter Beck, Michael Wind
Seibersdorf Lab.
Anne Samaras
TRAD
Petros Chrysogelos
OnSemi
Enoal LeGoulven
TRAD
Fabien Widmer
TRAD
Pierre Garcia
TRAD
Pierre Garcia
TRAD
F. Tillac
HIREX
C. Poivey / FX Guerre
ESA / HIREX
C. Poivey
ESA
Nancy Postiau, Marc Loiselet
Ari Virtanen
Wojtek Hajdas
Michele Muschitiello
UCL
Jyväskylä Univ.
PSI
ESTEC
F. Bezerra and V. FerletCavrois
CNES and ESA
08:45 Session : Memories, SETs, power MOSFETs (Véronique Ferlet-Cavrois)
Studies of radiation effects in new generations of non-volatile memories
Radiation Testing Of Candidate Memory Devices, DDR3 and NAND-Flash
Airbus & IDA
Break
Advanced Techniques for Radiation Characterization of ProASIC3 FPGAs
SET test vehicle in STMicroelectronics 65nm technology
Statistical SEGR radiation test method study in power MOSFETs
Airbus Elancourt
11:45 Session : Radiation test of various ICs - COTS and APS (Marc Poizat)
Radiation characterization of European COTS EEE components for space
applications
Total Ionizing Dose influence on the single event effect sensitivity of active EEE
components
HAS2 wafer lot acceptance testing
12:35 Lunch
14:00 Session: Component testing and in-flight data (Christian Poivey)
Heavy Ion Single Event Effect characterization of ATMEL AT7913 Space Wire
Remote Terminal Controller
High dose rate and low dose rate testing of STmicroelectronics TS4061 voltage
reference
Heavy Ion Single Event Effect testing of STmicroelectronics RHFPM4424 low side
MOSFET driver
Proton and Heavy Ion Multiple Bit Upset (MBU) testing of ATMEL M65609E
1Mbit SRAM
TID testing of Analog to Digital Converter and Digital to Analog Converter
Break
SEE testing of Analog to Digital Converter and Digital to Analog Converter,
comparison of different test methods
Update on SRAM flight data on board PROBA-2 TDM and ALPHASAT TDP8
16:15 Session: Facilities (Véronique Ferlet-Cavrois)
UCL irradiation test facility status report
RADEF irradiation test facility status report
PSI irradiation test facility status report
ESTEC Co60 source facility status report
17:00 Conclusion
17:15 End of day 2