Advanced Simulation of Photodetectors using APSYS
Transcription
Advanced Simulation of Photodetectors using APSYS
Advanced Simulation of Photodetectors using APSYS About APSYS multiplication avalanche photo-diodes (SAGCM APDs) for optic APSYS, Advanced Physical Models of Semiconductor Devices, (QWIPs) for remote sensing. is based on 2D/3D finite element analysis of electrical, optical fiber communications, and quantum well infrared photodiodes hv p-layer and thermal properties of compound and silicon semiconductor devices. Emphasis has been placed on band structure engineering and quantum mechanical effects. Inclusion of various i "x"-nm Al(.6)Ga(.4)As Models and Features i 200-nm GaAs n+ 300-nm GaAs (5e18cm-3) n+ GaAs Substrate APSYS is a full 2D/3D simulator, which solves, self-consistently, the Poisson’s equation, the current continuity equations, the carrier With hot electron effect Without hot electr. effect Hydrodynamic models for hot carriers Quantum wells and k.p theory Thermionic emission model 2 1.5 0.1 1 Energy (eV) Photocurrent (A/m) mechanical wave equations, and the scalar wave equations for Physical Models & Advanced Features See: Kwon et al, J. Lightwave Technol. Vol 23 No 5 (2005) pp 1896-1906 1 energy transport equations (hydrodynamic model), quantum features. n-layer Intrinsic Al0.6Ga0.4As layer for energy buildup purpose p+ 800-nm GaAs (5e18cm-3) applications involving photosensitive or light emitting devices. photo-detectors and avalanche photodiodes include the following i-layer p++ 30-nm GaAs (~1e19cm-3) optical modules also makes this simulation package attractive for photonic waveguiding devices. Applicable features for modeling i-layer Energy buildup layer Multiplication layer Al0.6Ga0.4As GaAs 0.5 0 0.5 -1 -1.5 0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 Distance (micron) 0.01 0 2 4 6 8 10 12 14 16 18 Reverse Bias (V) Impact ionization models Modeling results for InP/InGaAs SAGCM APDS are presented Intersubband optic absorption below. The basic InP/InGaAs SAGCM device structure can be Field dependent mobility model Doping density dependent lifetime Interface states and recombination Temperature dependent model and low temp(<77K) simulation A large number of material models Application Demonstrations Photodetectors have extensive applications in fields from astronomical observation, remote sensing imagers and optic fiber communications etc. Modeling capabilities are here demonstrated with PIN photo-diodes, separate absorption, grading, charge, and built up with Crosslight Layer Builder. Optical absorption is mainly in InGaAs layer and impact ionization For QWIPs, the single well bound and unbound states from mainly in n InP layer. APSYS modeling is presented below. - For full QWIP device, the modeling results show good agreement with experiment.