RF manual 10th edition
Transcription
RF manual 10th edition
th 1 0 ed ition 10 th editio n t h 1 0 e d th i t i o n RF manual 10 edition 10 Application and design manual for RF products TH September 2007 www.nxp.com ©2007 NXP B.V. All rights reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights. Date of release: September 2007 Document order number: 9397 750 16105 Printed in the Netherlands EDITI ON Introduction Welcome to this very special edition of the RF manual. This is our 10th issue – definitely an occasion for celebration! Over the years, the RF manual has become the leading RF application forum in the market and to celebrate our 10th edition we have launched an anniversary contest on our RF manual website: www.nxp.com/rfmanual. New developments This edition features some exciting new developments and products, which you can find in chapter 5 Focus applications and products. These include advances in SiGeC RF transistor and RF MMIC technologies such as the BFU725F, which meet today’s demand for higher frequencies. We have also introduced new CATV 1-GHz modules, enabling you to increase network capacity for high-end services. In addition, we now offer WiMAX transceivers, covering frequencies from 2.3 GHz to 3.8 GHz. These allow you easily to create total WiMAX system solutions that meet TTA, FCC and ETSI requirements. For satellite LNB, we have introduced the industry’s first fully integrated silicon-based IC solution – a valuable contribution to lowering total cost of ownership of satellite solutions as a whole. This RF IC, manufactured in NXP’s advanced SiGe BiCMOS process, QUBiC4G, paves the way for an exciting family of high frequency RF ICs, which will be available soon. RF manual web page www.nxp.com/rfmanual You will also find new BAW filters to improve reception in smart phone designs. And last but not least, we have released the first set of RF diodes in our latest UTLP package platform, enabling you to create smaller form factors. Application driven This manual is designed to be a dynamic source of RF information. In keeping with this, we have added some new applications that may be of interest: a satellite multi-switch box, wireless USB and RF front-ends for WiMAX applications. Interactive We know that many of you appreciate the RF manual’s interactive features. Thus as always, this edition aims to be the interactive source for all information on our RF systems. Simply ‘click’ on a product type or application note and you will be taken directly to the corresponding product information page or application document on the NXP website. Internet You can access the manual via www.nxp.com/rfmanual or just ‘google’ RF manual. Contents 1. Applications, recommended products and application notes . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7 1.1 Low-cost cellular phone front-end for ODM/CEM designs . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7 1.2 A 2.4 GHz front-end for WLAN, Bluetooth™, DECT, ZigBee™, etc. . . . . . . . . . . . . . . . . . . . . . . 9 1.3 Cordless Phone . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 1.4 Satellite outdoor unit, low noise block (LNB) for multiple users . . . . . . . . . . . . . . . . . . . . . . . . . . 12 1.5 Satellite Multi Switch Box - 4 x 4 (up to 16 x 16) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 1.6 Global Positioning System (GPS) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 1.7 TV / VCR / DVD tuning . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15 1.8 Car radio receiver (CREST ICs: TEF6860HL, TEF6862HL) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17 1.9 RF generic front-end for applications with a single antenna: for e.g. walkie-talkie & remote metering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18 1.10 RF generic front-end for applications with a dedicated antenna for reception and transmission: for e.g. tire pressure monitoring systems & keyless entry . . . . . . . . . . . . . . . . 19 1.11 Digital Audio Broadcasting (DAB) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20 1.12 Wireless Microphone . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 21 1.13 Wireless USB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 22 1.14 RF front-end for WiMAX applications . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 23 1.15 CATV electrical (line extenders) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 24 1.16 CATV optical (optical node with multiple out-ports) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25 1.17 Optical networking (SFF/SFP modules) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 26 2. Product portfolio . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 28 2.1 New products . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 28 2.2 RF diodes . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 29 2.2.1 Varicap diodes . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 29 2.2.2 PIN diodes . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 32 2.2.3 Band-switch diodes . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 33 2.2.4 Schottky diodes . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 34 2.3 RF Bipolar transistors . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 35 2.3.1 Wideband transistors . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 35 2.4 RF ICs . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 38 2.4.1 MMICs . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 38 2.4.2 Satellite LNB RF ICs . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 39 2.4.3 WiMAX RF ICs . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 39 2.5 RF MOS transistors . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 40 2.5.1 JFETs . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 40 2.5.2 MOSFETs . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 42 2.6 RF Modules . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 44 2.6.1 CATV Reverse Hybrids . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 44 2.6.2 CATV Push-Pulls . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 44 2.6.3 CATV power doublers . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 45 2.6.4 CATV optical receivers . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 45 2.7 Fiber-optic transceiver ICs . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 46 2.7.1 Laser drivers . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 46 2.7.2 Transimpedance amplifiers . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 46 3. Design-in tools . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 48 3.1 S-Parameters . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 48 Wideband transistors, MMICs & FETs . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 48 3.2 Spice models . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 48 Wideband transistors, FETs & Varicap diodes . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 48 3.3 Application notes . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 49 3.4 Demo boards . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 49 3.4.1 MMIC and SiGeC transistor demo boards . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 49 3.5 Samples of products in development . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50 3.6 Samples of released products . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50 3.7 Datasheets . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50 3.8 Design-in support . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50 4. Cross-references & replacements . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 52 4.1 Cross-references: Manufacturer types versus NXP types . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 52 4.2 Cross-references: NXP discontinued types versus NXP replacement types . . . . . . . . . . . . . . . . 57 5. Focus applications & products . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 59 5.1 High performance miniature BAW filters and duplexers . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 59 5.2 Total solution for satellite LNB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 61 5.3 NXP CATV C-family for the Chinese SARFT standard . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 63 5.4 Upgrade to a sustainable 1-GHz CATV network . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 66 5.5 A perfect match up to 20 GHz . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 68 5.6 Best-in-class LNB performance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 70 5.7 Mobile applications break free with WiMAX MIMO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 71 5.8 Boost RF performance and reduce system size . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 73 6. Packing and packaging information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 76 6.1 Ultra thin leadless package platform . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 76 6.2 Packing quantities per package with relevant ordering code . . . . . . . . . . . . . . . . . . . . . . . . . . 77 6.3 Marking codes list . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 78 7. Contacts and web links . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 80 WhatifyoucouldreduceRFcomponent countinyourwirelessdevices? LookatRFIC’s–MMICs,chapter2.4.1 1. Applications, recommended products and application notes NXP RF Applications http://www.nxp.com/rf NXP Application notes http://www.nxp.com/all_appnotes/index.html 1.1 Low-cost cellular phone front-end for ODM/CEM designs Application diagram LNA antenna mixer IF buffer Rx LOW FREQUENCY CHIPSET VCO Tx RF detector power driver amplifier buffer VCO bra504 NXP Semiconductors RF Manual 10th edition Recommended products Function RF detector Product RF schottky diode Package SOT323 SOD323 SOD882 SOT666 Type 1PS70SB84 1PS76SB17 1PS10SB82 1PS66SB82 Package SOT343 SOT343 SOT343 SOT23 SOT416 SOT323 Type BFG410W BFG425W BFG480W BFR520T BFR505T BFS540 Package various various various various various various various Type BAP50 BAP51 BAP55 BAP63 BAP64 BAP65 BAP1321 VCO varicap diodes Package SOD523 SOD523 Type BB145B BB179 VCxO varicap diodes Package SOD523 SOD523 Type BB198 BB199 Package SOT343R SOT343R SOT363 SOT363 Type BGA2001 BGA2003 BGA2011 BGA2012 Low Cd schottky Function Product Bipolar transistor Driver MMIC Function Buffer Function Antenna switch Product RF bipolar transistor Wideband transistor Product RF diode PIN diode Function Mixer Function VCO Function VCxO Function LNA Product Varicap diodes Product Varicap diodes Product MMIC Low noise wideband amplifier Product Product Bipolar transistor MMIC Recommended application notes BFG21W BFG480W BFG410W BFG425W BFG21W BFG480W BFG410W BFG480W BFG425W, BFG410W BGA2003 BGA2001 BGA2003 BGA2012 BGA2011 BFG425W, BFG21W BGA2022 BFG410W, BFG425W Product highlight: BGA2771 MMIC General - purpose wideband amplifier Silicon Monolithic Microwave Integrated Circuit (MMIC) wideband amplifier with internal matching circuit in a 6-pin SOT363 SMD plastic package. The BGA27xx series amplifier provides large bandwidth and high quality in wireless system applications. NXP Semiconductors RF Manual 10th edition Package SOT343R SOT343R SOT363 SOT363 SOT363 SOT363 Type BGA2001 BGA2003 BGA2771 BGA2776 PRF949 BFS17W Wideband transistor Amplifier* Gen. purpose wideband ampl. Package SOT343 SOT343 SOT363 SOT363 SOT363 Type BFG21W BFG480W BGA2031/1 BGA2771 BGA2776 Product * = 2 stage variable gain linear amplifier 1880MHz PA driver 1880MHz PA driver 2GHz LNA 2GHz LNA 800MHz PA driver 900MHz driver 900MHz LNA 900MHz LNA CDMA cellular VCO Demoboard 900MHz LNA Demoboard for BGA2001 Demoboard for W-CDMA High IP3 MMIC LNA at 1.8 - 2.4 GHz High IP3 MMIC LNA at 900MHz Power amplifier for 1.9GHz DECT and PHS Rx mixer for 2450MHz Ultra LNAs for 900&2000MHz with high IP3 Low noise amplifier Gen. purpose amplifier Wideband transistor MMIC RF bipolar transistor Power amplifier Linear mixer Type BFG410W BFG425W BFG480W BGA2022 Wideband transistor MMIC Features }Internally matched }Wide frequency range }Very flat gain }High output power }High linearity }Unconditionally stable Type BFG21W BFG425W BFG480W BGA2031/1 BGA2771 BGA2776 Package SOT343 SOT343 SOT343 SOT363 RF bipolar transistor IF Function Function Package SOT343 SOT343 SOT343 Amplifier* SOT363 Gen. purpose SOT363 wideband ampl. SOT363 Wideband transistor 1.2 A 2.4 GHz front-end for WLAN, Bluetooth™, DECT, ZigBee™, etc. Application diagram low pass filter PActrl Tx antenna SPDT switch medium power amplifier APPLICATION CHIP SET Rx bandpass filter LNA SPDT bra502 Recommended products Function SPDT switch Function Medium power amplifier Function LNA Product RF diode PIN diode Product MMIC Gen. purpose med. power amplifier Product MMIC Low noise wideband amplifier Package SOD523 SOD882T SOD882T Type BAP51-02 BAP51LX BAP55LX Package Type SOT89 BGA6589 Package Type SOT343R BGA2003 SOT343R BGA2001 Recommended application notes 2.45 Ghz T/R, RF switch Low-impedance PIN diode Demoboard 900 MHz LNA Demoboard for 900&1800 MHz Demoboard for W-CDMA BAP51-02 BAP50-05 BGA2003 BGA2001 BGA2003 Product highlight: BGA6289 MMIC medium power amplifier Silicon Monolithic Microwave Integrated Circuit (MMIC) wideband medium power amplifier with internal matching circuit in a 4-pin SOT89 plastic low thermal resistance SMD package. The BGA6x89 series of medium power gain blocks provides large bandwidth and high-quality performance in 2.4GHz wireless applications. Features }Broadband 50W gain block }17dBm output power }Single supply voltage needed NXP Semiconductors RF Manual 10th edition 1.3 Cordless Phone (Analog) Application diagram antenna LNA filter mixer filter buffer SPDT switch filter VCO PA driver CHIPSET VCO bra910 Recommended products Function RF Switch Function LNA Function Mixer Product RF diode PIN Diode Product RF bipolar transistor Wideband transistor Product RF bipolar transistor Wideband transistor MMIC Linear mixer Package various various various Type BAP51 BAP63 BAP64 Package SOT23 SOT23 SOT323 SOT343 SOT343F Type BFT25 PBR951 PRF957 BFG425W BFG424F Package SOT323 SOT143 SOT343 SOT343 SOT343 SOT363 Type PRF957 BFG540 BFG410W BFG425W BFG480W BGA2022 Function VCO Function Driver/Buffer Product Varicap diodes VCO varicap diodes Product RF bipolar transistor Wideband transistor Package SOD323 SOD523 SOD323 SOD523 Type BB131 BB145B BB148 BB149 Package SOT23 SOT323 SOT343 SOT343F Type PBR951 PRF957 BFG425W BFG424F Recommended application notes 2.45 Ghz T/R, RF switch Low-impedance PIN diode BAP51-02 BAP50-05 Product highlight: BAP64xx PIN diode for RF switch board space saving by supplying a range of high compact package options – including SOD523, SOD323 and leadless SOD882T. Operating up to 3GHz with high-voltage handling capabilities, NXP’s PIN diodes are ideal for a wide range of wireless communication application. Together with outstanding RF performance, this component simplify design-in because of its extremely low forward resistance, diode capacitance and series inductance. Significant Features }Operate up to 3GHz }High isolation, low distortion, low insertion loss }Low forward resistance (Rd) and diode capacitance (Cd) }Ultra-small package options 10 NXP Semiconductors RF Manual 10th edition Cordless Phone (DECT front-end) (DECT in-house basestation) Application diagram Application diagram antenna LNA antenna LNA filter mixer filter buffer switch filter SPDT switch CHIPSET PA filter VCO PA driver CHIPSET VCO bra911 Recommended products Function RF Switch Function LNA Recommended products Product RF diode Product RF bipolar transistor RF transistor bra910 PIN Diode Wideband transistor SiGeC transistor Package various SOD882T SOD882T various various various Type BAP51 BAP55LX BAP142LX BAP63 BAP64 BAP1321 Function Package SOT343 SOT343F Type BFG425W BFG424F Function SOT343F BFU725F RF Switch LNA Mixer Function VCO Function Driver/Buffer NXP NPN double polysilicon wideband transistor with buried layer is for low voltage and low noise applications in a plastic, 4-pin dualemitter SOT343R package. RF diode Product RF bipolar transistor RF transistor Function Product highlight: BFG425W NPN wideband transistor Product PIN Diode Wideband transistor SiGeC transistor Product RF bipolar transistor Wideband transistor MMIC Linear mixer Product Varicap diodes VCO varicap diodes Product RF bipolar transistor Wideband transistor RF transistor SiGeC transistor Package various SOD882T SOD882T various various various Type BAP51 BAP55LX BAP142LX BAP63 BAP64 BAP1321 Package SOT343 SOT343F Type BFG425W BFG424F SOT343F BFU725F Package SOT343 SOT343 SOT343 SOT363 Type BFG410W BFG425W BFG480W BGA2022 Package Type SOD523 BB145B Package SOT343 SOT343F SOT343 Type BFG425W BFG424F BFG480W SOT343F BFU725F Features }Very high maximum power gain (20dB for 2GHz) }Low noise figure (1.2dB for 2GHz) }High transition frequency (25GHz) }Emitter is thermal lead }Low feedback capacitance (95fF) NXP Semiconductors RF Manual 10th edition 11 1.4 Satellite outdoor unit, low noise block (LNB) for multiple users. Application diagram horizontal 1st antenna stage LNA 2nd stage LNA 3rd stage LNA H low IF amplifier low oscillator IF out 1 V low IF amplifier BIAS IC (4 x 2) IF SWITCH IF amplifier H high IF amplifier vertical antenna high oscillator IF out 2 IF amplifier V high 1st stage LNA 2nd stage LNA IF amplifier 3rd stage LNA brb022 Recommended products Function Oscillator Function 1st stage IF amplifier Function IF switch Product RF bipolar transistor Wideband transistor Product MMIC General purpose amplifier RF bipolar transistor Wideband transistor Product RF diode PIN diode Package SOT343 SOT343F Type BFG424W BFG424F Package SOT363 SOT363 SOT363 SOT363 SOT363 SOT343 SOT343F Type BGA2711 BGA2712 BGA2748 BGA2714 BGA2717 BFG424W BFG424F Package various various various various various Type BAP64 BAP51 BAP1321 BAP50 BAP63 Function Output stage IF amplifier Function 3rd stage LNA Function BIAS IC Product Package SOT363 SOT363 SOT363 SOT363 SOT363 Type BGA2709 BGA2776 BGM1014 BGM1012 BGA2716 MMIC General purpose amplifier RF bipolar transistor Wideband transistor SOT343 BFG325 Package Type SiGeC transistor SOT343F BFU725F Package Type TSSOP16 UAF4000TS Product RF transistor Product Bias IC Recommended application notes 2.45 Ghz T/R, RF switch Low-impedance PIN diode BAP51-02 BAP50-05 Product highlight: BFG424F bipolar oscillator The BFG424F is an NPN double polysilicon wideband transistor with a buried layer for low-voltage applications. Housed in an easy-to-use SOT343F package, it features very high gain, stable phase noise & low feedback capacitance. 12 NXP Semiconductors RF Manual 10th edition Features } Stable phase noise over temperature performance } Compact flat-lead SOT343F package simplifies assembly } Free oscillations at all LO frequencies 1.5 Satellite Multi Switch Box - 4 x 4 (up to 16 x 16) Application diagram terrestrial input input amplifier terrestrial input amplifiers LNB output amplifiers satellite dishe(s) coax out to STB SWITCH MATRIX FOR 4 × 4, NEEDS 16 (SINGLE) PIN DIODES coax out to STB coax out to STB coax out to STB brb023 Recommended products Function Input amplifier terrestrial Function Input amplifier LNB Function Switch matrix Product MMIC Package General purpose medium power amplifier Product MMIC General purpose amplifier RF bipolar transistor Wideband transistor Product RF diode PIN diode Type Function Product BGA6289 SOT89 BGA6489 MMIC BGA6589 Package SOT363 SOT363 SOT363 SOT363 SOT343 SOT343 SOT143 SOT143 Type BGA2771 BGA2776 BGA2709 BGM1012 BFG325 BFG425W BFG520 BFG540 Package Type BAP50 BAP51 BAP63 BAP64 BAP70 BAP1321 Various Product highlight: PIN diodes for switching matrix Together with outstanding RF performance, this component simplify design-in because of its extremely low forward resistance, diode capacitance and series inductance. Significant board space saving by supplying a range of high compact package options – including SOD523, SOD323 and leadless SOD882T. Output amplifier RF bipolar transistor Package General purpose medium power amplifier General purpose amplifier Wideband transistor Type BGA6289 SOT89 BGA6489 BGA6589 SOT363 SOT363 SOT363 SOT223 SOT223 SOT223 SOT143 BGM1011 BGM1013 BGM1014 BFG135 BFG591 BFG198 BFG540 Features } High isolation, low distortion, low insertion loss } Low forward resistance (Rd) and diode capacitance (Cd) } Ultra-small package options NXP Semiconductors RF Manual 10th edition 13 1.6 Global Positioning System (GPS) Application diagram antenna LNA filter mixer filter GPS IC oscillator bra499 Recommended products Function LNA Product RF bipolar transistor MMIC RF transistor Wideband transistor Low noise wideband amplifier General purpose wideband amplifier SiGeC transistor Package SOT343 SOT343 Type BFG425W BFG410W SOT343R BGA2001 SOT343R BGA2003 SOT363 SOT363 SOT363 SOT363 BGM1013 BGM1011 BGA2715 BGA2748 SOT343F BFU725F Recommended application notes Introduction into the GPS front-end* 900 MHz LNA 2 GHz LNA 2 GHz high IP3 LNA BGAx, BGMx, BGUx BFG410W BFG410W BGA2003 * No web link available, published in Appendix 6 th edition, see RF Manual web page. Product highlight: BFU725F SiGeC microwave NPN transistor } High switching frequency (fT >100 GHz / fMAX >150 GHz) } Plastic surface-mount SOT343F package Meet the trend towards higher frequencies. The BFU725F provides high switching frequencies plus extreme high gain and low noise. Benefits } SiGeC process delivers high switching frequency from a silicon-based device } Cost-effective alternative to GaAs devices } RoHS compliant Features } Very low noise (0.4 dB at 1.8 GHz / 0.67 dB at 5.8 GHz) } High maximum stable gain (27.8 dB at 1.8 GHz / 10 dB at 18 GHz) 14 NXP Semiconductors RF Manual 10th edition 1.7 TV / VCR / DVD tuning Application diagram antenna input filter RF preamplifier bandpass filters IF amplifier mixer IF out oscillator bra500 Recommended products Function Product VHF low Input filter Varicap diode VHF high UHF Function Product 5V 9V RF pre-amplifier MOSFET 2-in-1 @ 5 V 2-in-1 @ 3 V Package SOD323 SOD523 SOD323 SOD523 SOD523 SOD323 SOD523 Type BB152 BB182 BB153 BB178 BB187 BB149A BB179 Function Package SOT143 SOT143 SOT143 SOT143 SOT143 SOT143 SOT143 SOT143 SOT143 SOT363 SOT363 SOT363 SOT363 SOT363 SOT363 SOT363 SOT666 SOT666 SOT363 SOT363 SOT666 Type BF904 BF909 BF1201 BF1202 BF1105 BF1211 BF1212 BF1100 BF1109 BF1102R BF1203 BF1204 BF1205 BF1205C BF1206 BF1207 BF1208 BF1208D BF1210 BF1214 BF1206F Function Product VHF low Bandpass filter Varicap diode VHF high UHF Product VHF low Oscillator Varicap diode VHF high UHF Function IF amplifier Product MMIC Wideband amplifier Package SOD323 SOD523 SOD323 SOD523 SOD523 SOD323 SOD523 Type BB152 BB182 BB153 BB178 BB187 BB149A BB179 Package SOD323 SOD523 SOD323 SOD523 SOD523 SOD323 SOD523 Type BB152 BB182 BB153 BB178 BB187 BB149A BB179 Package Type SOT363 BGA2717 Recommended application notes Application note for MOSFETs: BF9x, BF110x, BF120x* BF9x, BF110x, BF120x rd * No web link available, published in Appendix 3 edition, see RF Manual web page. Product highlight: BF1206F dual gate mosfet double amplifier specified for low power applications. The device consists of two dual gate mosfet amplifiers in a small SOT666 flatlead package. The BF1206F is a true low power device specified for low voltage and low currents, intended for use in mobile applications where power consumption is critical. Performance is suitable for application at supply voltages of 3Volts and draincurrents of 4mA. Features } Low power specified } Two amplifiers in one small SOT666 package } Shared gate 2 and Source leads } Each amplifier is biased by an external bias resistor } E xcellent noise and crossmodulation performance NXP Semiconductors RF Manual 10th edition 15 Whatifyoucouldcreateasmaller formfactor? LookatUTLPpackages,chapter6 16 NXPSemiconductorsRFManual10thedition 1.8 Car radio receiver (CREST ICs: TEF6860HL, TEF6862HL) Application diagram FM input filter & AGC IF bandpass filter 1st mixer 2nd mixer variable BW filter IF limiter FM deamplifier modulator f AGC & hum filter oscillator V FM MPX oscillator AM LNA DET RF input filter 1st mixer IF bandpass filter 2nd mixer IF bandpass filter IF AM deamplifier modulator AM audio bra501 Recommended products Function AM LNA Product RF transistor Function Product FM input filter & AGC RF diode JFET Varicap diode PIN diode Package SOT23 Type BF862 Package SOT23 SOT23 SOD523 SOD323 Type BB201* BB207 BAP70-02 BAP70-03 Function AGC & hum filter Product Function Product Oscillator RF diode RF diode Package Type PIN diode SOT363 BAP70AM Varicap diode Package SOD323 SOD523 Type BB156 BB208-02 * = OIRT Note 1: All these recommended discrete products are applicable for NICEPACS, CCC and DDICE: NICE:TEA6840H,TEA6845H,TEA6846H, NICEPACS:TEA6848H,TEA6849H; CCC:TEF6901H,TEF6903H; DDICE: TEA6721HL. All these recommended discrete products are applicable excluding AM LNA in: DICE2:TEF6730HWCE. Note 2: Phone and portable radio (IC:TEA5767/68) use varicap BB202 as FM oscillator. Recommended application notes Low-voltage FM stereo radio (TEA5767/68)* BB202 A NICE radio (TEA6848H) - Draft** JFETS,Varicaps and PIN diodes Integrated Car Radio CCC (TEF69xxx) - Draft** JFETS,Varicaps and PIN diodes * No web link available, published in Appendix 3 rd edition, see RF Manual web page. ** No web link available, ask your NXP sales representative. Product highlight: BF862 Junction Field Effect Transistor High performance Junction Fet BF862, specially designed for car radio AM amplifiers. Our Tuning component portfolio contains excellent products for car radio reception applications, playing a vital role for in-vehicle media platforms. The NXP devices for this application ensure excellent reception quality and ease of design in. Performance is demonstrated in reference designs. Features } High transition frequency and optimized input capacitance for excellent sensitivity } High transfer admittance resulting in high gain } Encapsulated in the versatile and easy to use SOT23 package NXP Semiconductors RF Manual 10th edition 17 1.9 RF generic front-end for applications with a single antenna: for e.g. walkie-talkie & remote metering Application diagram antenna filter LNA filter mixer buffer SPDT switch filter VCO PA driver LOW FREQUENCY CHIP SET VCO bra850 Recommended products Function SPDT Switch Product RF diode Type BA277 BA591 BAP51 BAP1321 Function Package SOT23 SOT323 SOT323 Low noise SOT343R wideband ampl. SOT343R Type PBR951 PRF957 PRF947 BGA2001 BGA2003 Function Package Wideband SOT323 transistor SOT23 Amplifier SOT363 Gen. purpose SOT363 wideband ampl. SOT363 Type PRF957 PBR951 BGA2031/1 BGA2771 BGA2776 Bandswitch diode PIN diode Function LNA Product RF bipolar transistor MMIC Package SOD523 SOD323 various various Wideband transistor Mixer Buffer Function Function Product RF bipolar transistor Driver MMIC Product highlight: PRF957 silicon NPN UHF wideband transistor Silicon NPN UHF wideband transistor in a surface mount 3-pin SOT323 package is primarily intended for wideband applications in the RF front end. The transistor is widely built as LNA, power amplifier, driver and buffer in the UHF band application. 18 NXP Semiconductors RF Manual 10th edition Power amplifier Function VCO Product RF bipolar transistor Wideband transistor MMIC Linear mixer Product RF bipolar transistor Product MMIC Product Varicap diodes Wideband transistor Package SOT343 SOT343 SOT343 SOT363 Type BFG410W BFG425W BFG480W BGA2022 Package SOT23 SOT323 SOT323 SOT416 Type PBR951 PRF957 PRF947 PRF949 Package Type BGA6289 BGA6489 BGA6589 Gen. purpose SOT89 wideband ampl. Package VCO varicap SOD523 diodes SOD323 Type BB198 BB156 Features } Small 3-pin plastic surface mounted package } Low noise (1.3dB at 1GHz) and high power gain (15dB at 1GHz) } Gold metallization ensures excellent reliability 1.10 RF generic front-end for applications with a dedicated antenna for reception and transmission: for e.g. tire pressure monitoring systems & keyless entry Application diagram antenna filter receiver LNA filter mixer LOW FREQUENCY CHIP SET buffer VCO antenna filter transmitter PA driver VCO LOW FREQUENCY CHIP SET bra851 Recommended products Function LNA Product RF bipolar transistor MMIC Package SOT23 SOT323 SOT323 Low noise SOT343R wideband ampl. SOT343R Type PBR951 PRF957 PRF947 BGA2001 BGA2003 Package Wideband SOT323 transistor SOT23 Amplifier SOT363 Gen. purpose SOT363 wideband ampl. SOT363 Type PRF957 PBR951 BGA2031/1 BGA2771 BGA2776 Wideband transistor Function Mixer Function Function Product RF bipolar transistor Driver MMIC Function VCO Product Varicap diodes Package SOD323 VCO varicap SOD323 diodes SOD523 SOD323 Type BB148 BB149A BB198 BB156 Product highlight: NXP varicap diodes for VCO Varicap diodes are principally used as voltage varicap capacitors with their diode function a secondary option. These devices are ideal for voltage controlled oscillators (VCO) in ISM band applications. Buffer Function Power amplifier Product RF bipolar transistor Wideband transistor MMIC Linear mixer Product RF bipolar transistor Product RF bipolar transistor MMIC Wideband transistor Wideband transistor Amplifier Gen. purpose wideband ampl. Package SOT343 SOT343 SOT343 SOT363 Type BFG410W BFG425W BFG480W BGA2022 Package SOT23 SOT323 SOT323 SOT416 Type PBR951 PRF957 PRF947 PRF949 Package SOT323 SOT23 SOT363 SOT363 SOT363 Type PRF957 PBR951 BGA2031/1 BGA2771 BGA2776 Features } E xcellent linearity } E xcellent matching } Very low series resistance } High capacitance ratio NXP Semiconductors RF Manual 10th edition 19 1.11 Digital Audio Broadcasting (DAB) Application diagram antenna filter LNA mixer filter CHIPSET oscillator bra913 Recommended products Function Frequency Product RF bipolar transistor RF transistor VHF band Wideband transistor JFET 5V Mosfet 9V LNA RF transistor RF bipolar transistor S-band/ L-band MMIC Function Mixer Function VCO Product RF bipolar transistor Wideband transistor MMIC Linear mixer Product Varicap diodes SiGeC transistor Wideband transistor Low noise wideband amplifier General purpose wideband amplifier Package SOT343 SOT343 SOT343 SOT363 Package VCO varicap SOD323 diodes Package SOT23 SOT323 SOT23 SOT143 SOT143R SOT143 SOT143 SOT143 SOT143 SOT143 SOT143 SOT143 SOT143 Type BFS17 BFS17W BF862 BF904 BF904R BF909 BF1201 BF1202 BF1105 BF1211 BF1212 BF1100 BF1109 SOT343F BFU725F SOT343 SOT343 BFG425W BFG410W SOT343R BGA2001 SOT343R BGA2003 SOT363 SOT363 SOT363 SOT363 BGM1013 BGM1011 BGA2715 BGA2748 Type BFG410W BFG425W BFG480W BGA2022 Type BB149 Suitable frequencies for DAB identified on VHF band, L-band and S-band: • VHF band I: 47 - 68 MHz • VHF band III: 174 - 240 MHz • L-band: 1452 - 1467.5 MHz • S-band: 2310 - 2360 MHz Product highlight: BFG410W NPN wideband transistor NXP NPN double polysilicon wideband transistor with buried layer is for low voltage and low noise applications in a plastic, 4-pin dualemitter SOT343R package. 20 NXP Semiconductors RF Manual 10th edition Features } Very high power gain (18dB at 2GHz) } Low noise figure (1.2dB at 2GHz) } High transition frequency (22GHz) } Emitter is thermal lead } Low feedback capacitance (45fF) 1.12 Wireless Microphone Application diagram antenna PA driver VCO IC bra912 Recommended products Function PA/Driver Function VCO Product RF bipolar transistor Product Varicap diodes Wideband transistor Package SOT23 SOT323 SOT23 SOT323 SOT343 SOT343 SOT343 Package VCO varicap SOD523 diodes SOD323 Type BFT93 BFT93W PBR951 PRF957 BFG21W BFG425W BFG480W Type BB145B BB149 Operation frequency: • 70M - 72 M • 150 MHz - 270 MHz • 470 MHz - 1000 MHz • 2400 MHz Product highlight: BFG480W NPN wideband transistor NXP NPN double polysilicon wideband transistor with buried layer is for low voltage and low noise applications in a plastic, 4-pin dualemitter SOT343 package. Features } High power gain } Low noise figure } High efficiency } High transition frequency } Emitter is thermal lead } Low feedback capacitance } Linear and non-linear operation NXP Semiconductors RF Manual 10th edition 21 1.13 Wireless USB Application diagram antenna band pass LNA SPDT switch PA CHIPSET band pass brb024 Recommended products Function LNA Function SPDT Switch Product RF transistor SiGeC transistor Product RF diode PIN diode Package Type SOT343F BFU725F Package various various various SOD882T SOD882T various Type BAP51 BAP63 BAP64 BAP55LX BAP142LX BAP1321 Product highlight: BFU725F SiGeC microwave NPN transistor } High switching frequency (fT >100 GHz / fMAX >150 GHz) } Plastic surface-mount SOT343F package Meet the trend towards higher frequencies. The BFU725F provides high switching frequencies plus extreme high gain and low noise. Benefits } SiGeC process delivers high switching frequency from a siliconbased device } Cost-effective alternative to GaAs devices } RoHS compliant Features } Very low noise (0.4 dB at 1.8 GHz / 0.67 dB at 5.8 GHz) } High maximum stable gain (27.8 dB at 1.8 GHz / 10 dB at 18 GHz) 22 NXP Semiconductors RF Manual 10th edition 1.14 RF front-end for WiMAX applications Application diagram antenna 1 filter PA filter TX1 filter PA filter TX2 antenna 2 switch RF TRANSCEIVER switch BASEBAND IC filter RX1 filter RX2 brb025 Recommended products Function RF transceiver Product 1 Rx/1 Tx 2 Rx/1 Tx 2 Rx/2 Tx 1 Rx/1 Tx 2 Rx/1 Tx 2 Rx/2 Tx 1 Rx/1 Tx Frequency 2.3 - 2.4 2.3 - 2.7 2.3 - 2.7 2.5 - 2.7 3.3 - 3.8 3.3 - 3.8 3.3 - 3.8 Package SOT619 SOT778 SOT778 SOT619 SOT778 SOT778 SOT619 Type UXF23480 UXA23465 UXA23466 UXF23460 UXA23475 UXA23476 UXA23470 Product highlight: UXx234xx Covering frequencies from 2.3 GHz to 3.8 GHz, these fully integrated, low-power, direct conversion transceivers easily allow total WiMAX system solutions to meet TTA, FCC and ETSI requirements. With dual receiver/transmitter configurations available they can also deliver better uplink performance and improve your total end-user system. In addition, low power requirements ensure longer battery life. Features } Fully integrated direct up transmitter and ZIF receiver architecture } Dual Rx and Tx for MIMO operation } Low noise, high dynamic range receiver with high linearity } Fully integrated VCO with integrated supply voltage regulator } Serial bus digital interface (4 wires) NXP Semiconductors RF Manual 10th edition 23 1.15 CATV electrical (line extenders) Application diagram duplex filter RF preamplifier RF power amplifier duplex filter coax in coax out RF reverse amplifier bra505 Recommended products Function Product Frequency 1000MHz Gain (dB) 33.5 - 35.5 33.5 - 35.5 26.2 - 27.8 21 - 22 33.5 - 35.2 33.5 - 34.5 18 - 19 21 - 22 18 - 19 21 - 22 33.5 - 34.5 34.5 - 36.5 18 - 19 Type BGY588N BGY588C BGY587B BGY687 BGE788C BGE788 BGY785A BGY787 BGY885A BGY887 BGY888 CGY888C BGY1085A Frequency 5-75 MHz 5-120 MHz 5-200 MHz Gain (dB) 29.2 - 30.8 24.5 - 25.5 23.5 - 24.5 Type BGY68 BGY66B BGY67A 550MHz 600MHz RF pre-amplifier Push-Pulls 750MHz 870MHz Function RF reverse amplifier Product Reverse hybrids Function Product Frequency 550MHz 750MHz RF power amplifier Power doublers 870MHz 1000MHz Gain (dB) 18-19 19.5 - 20.5 18.2 - 18.8 18.2 - 18.8 20 - 20.6 18 -19 18.2 18.8 19.7 20.3 18.2 -18.8 19.7 -20.3 21.2 - 21.8 19.75 - 20.25 19.25 - 19.75 20.5 - 22.5 23 - 25 20.5 - 22.5 20.5 - 22.5 22.5 - 24.5 22.5 - 24.5 All available in SOT115 package. Recommended application notes BGS67A high-dynamic-range hybrid ampl. reverse ampl. 2-way CATV systems A hybrid wideband amplifier module for digital CATV networks with BGD902 BGS67A BGD902 Product highlight: CGD1044H CGD1044H with high-output power is primarily designed for use in fiber deep-optical-node applications (N+0/1/2). This 1GHz solution offers an extended temperature range, high power overstress capabilities and high ESD levels resulting in a low cost of ownership. It’s designed for durability and offering superior ruggedness. 24 NXP Semiconductors RF Manual 10th edition Features } High-output power } E xcellent linearity, stability, and reliability } High power gain } E xtremely low noise } Silicon Nitride passivity } GaAs HFET dies for high-end applications Type BGD502 BGD704 BGD712 BGD712C BGD714 BGD802 BGD812 BGD814 BGD902 BGD904 BGD906 CGD914 CGD923 CGD942C CGD944C CGD1042 CGD1042H CGD1044 CGD1044H 1.16 CATV optical (optical node with multiple out-ports) Application diagram RF power amplifier duplex filter coax out port 1 fiber in RF forward receiver RF preamplifier splitter coax out port 2 coax out port 3 coax out port 4 bra852 Recommended products Function RF forward receiver Function RF pre-amplifier Function RF power amplifier Product Forward path receiver Product Frequency 870MHz Frequency Push-Pulls 870MHz Power doubler 870MHz Product Power doublers Frequency 870MHz Package SOT115 SOT115 SOT115 Type BGO807 BGO807C BGO827 Gain (dB) 18 - 19 21 - 22 18.2 - 18.8 Type BGY885A BGY887 BGD812 Gain (dB) 20.5 - 22.5 23 - 25 Type CGD942C CGD944C Recommended application notes Using a Philips optical receiver in CATV applications All optical receivers Product highlight: BGO807C BGO807C is an integrated optical receiver module that provides high output levels and includes an integrated temperature compensated circuitry. In your optical node design, BGO807C enables a high performance/ price ratio and ruggedness. When upgrading an HFC network from analog to digital our BGO807C is the perfect fit. Features } E xcellent linearity } Low noise } E xcellent flatness } Standard CATV outline } Rugged construction } Gold metallization ensures excellent reliability } High optical input power range NXP Semiconductors RF Manual 10th edition 25 1.17 Optical networking (SFF/SFP modules) Application diagram PIN diode RF preamplifier RF power amplifier fiber in Rx data out module controller fiber out Tx data in laser laser driver bra507 Recommended products Function RF pre-amplifier Function Laser driver Product Transimpedance amplifier Product Laser driver Data rate (Mb/s) 155 622 1200 2488 Package die only die only die only die only Data rate (Mb/s) Package SOT560-01 1250 SOT560-01 Type TZA3036 TZA3026 TZA3046 TZA3013 Type TZA3047B TZA3050 Recommended application notes OM5811 demo boards supporting TZA47 laser TZA47 drivers for 30-3200 Mb/s TZA30x6 – Receiver Optical Sub-Assembly* TZA30x6 * No web link available for this application note. Please ask your Philips sales representative for assistance. Product highlight TZA3046 TZA3046 transimpedance preamplifier brings high receiver sensitivity, wide dynamic range, and low power dissipation to Receiver Optical Sub Assemblies (ROSA). TZA3046 is optimized for Fibre Channel transmission systems and is equipped with a SFF8472compliant output of average photo current for RSSI monitoring. A clear bonding layout and identical ports on both side of the die make assembly easy. 26 NXP Semiconductors RF Manual 10th edition Features } High receiver sensitivity, low equivalent input noise } E xceptionally wide bandwidth } On-chip AGC with options for external control } Input overload up to 1.5 mA pp } Differential outputs } Bias voltage for PIN diode } Single 3.3-V supply voltage (range: 2.9 to 3.6 V) Whatifyoucouldgetacosteffective RFtransistorupto20GHz? LookatBFU725F,chapter5.5 NXPSemiconductorsRFManual10thedition 2 2. Product portfolio NXP RF product catalog: http://www.nxp.com/rf 2.1 New products DEV = In development CQS = Customer qualification samples RFS = Release for supply Type Application / Description Status September 2007 Planned release NEW: RF diodes BB202LX BB178LX BB179BLX BB179LX BB181LX BB182LX BB184LX BB185LX BB187LX BAP142LX BAP50LX BAP51LX BAP55LX BAP63LX BAP64LX BAP65LX BAP1321LX Varicap for mobile radio in cellulars in 1006 leadless package Varicap for TV & Satellite in 1006 leadless package Varicap for TV & Satellite in 1006 leadless package Varicap for TV & Satellite in 1006 leadless package Varicap for TV & Satellite in 1006 leadless package Varicap for TV & Satellite in 1006 leadless package Low voltage varicap for TV & Satellite UHF in 1006 leadless package Low voltage varicap for TV & Satellite VHF in 1006 leadless package Low voltage varicap for TV & Satellite VHF in 1006 leadless package Cellular phone, Bluetooth, Cordless phone -RF switch & FE module in 1006 leadless package Cellular phone, Bluetooth, Cordless phone -RF switch & FE module in 1006 leadless package Cellular phone, Bluetooth, Cordless phone -RF switch & FE module in 1006 leadless package Cellular phone, Bluetooth, Cordless phone -RF switch & FE module in 1006 leadless package Cellular phone, Bluetooth, Cordless phone -RF switch & FE module in 1006 leadless package Cellular phone, Bluetooth, Cordless phone -RF switch & FE module in 1006 leadless package Cellular phone, Bluetooth, Cordless phone -RF switch & FE module in 1006 leadless package Cellular phone, Bluetooth, Cordless phone -RF switch & FE module in 1006 leadless package RFS RFS CQS RFS CQS CQS CQS RFS CQS RFS RFS RFS RFS RFS RFS RFS RFS Released Released Q4 2007 Released Q4 2007 Q4 2007 Q4 2007 Released Q4 2007 Released Released Released Released Released Released Released Released RFS RFS Released Released RFS RFS RFS RFS RFS Released Released Released Released Released RFS RFS RFS RFS RFS RFS RFS Released Released Released Released Released Released Released RFS DEV DEV DEV Released Q1 2008 Q1 2008 Q1 2008 RFS RFS RFS RFS RFS Released Released Released Released Released NEW: RF MOS transistors BF1208D BF1214 Twin MOSFET with two LNAs for TV/VCR/DVD/STB/SAT with internal switching circuit Twin MOSFET with two identical VHF-optimized LNA’s NEW: RF IC, Biasing ASIC and pHEMT GaAs transistors BGA2714 UAF3000TS UAF4000TS TFF1000HN TFF1004HN Silicon Gain Block MMIC for Satellite LNB Biasing ASICs for Satellite LNB Biasing ASICs for Satellite LNB Fully integrated Downconverter for Satellite LNB compliant with European and Asian standards Fully integrated Downconverter for Satellite LNB compliant with European and Asian standards NEW: RF IC WiMAX UXA23465 UXA23466 UXA23475 UXA23476 UXF23480 UXF23460 UXA23470 RF WiMAX transceiver 2 Rx/1 Tx RF WiMAX transceiver 2 Rx/2 Tx RF WiMAX transceiver 2 Rx/1 Tx RF WiMAX transceiver 2 Rx/2 Tx RF WiMAX transceiver 1 Rx/1 Tx RF WiMAX transceiver 1 Rx/1 Tx RF WiMAX transceiver 1 Rx/1 Tx NEW: SiGeC transistors & MMICs BFU725F BFU705F BGU7003 BFU780F SiGeC transistor for high frequency applications: e.g.: DECT, GPS, Wireless LAN, Satellite Radio (DAB) SiGeC transistor for high frequency applications: e.g.: LNB 2nd stage (12 GHz) MMIC for high frequency applications SiGeC transistor for high frequency applications with high linearity performance NEW: RF CATV modules CGD1042 CGD1044 CGD1042H CGD1044H CGY888C 28 1000 MHz, 22 dB gain Power Doubler, GaAs HFET SOT115 1000 MHz, 25 dB gain Power Doubler, GaAs HFET SOT115 1000 MHz, 22 dB gain Power Doubler, GaAs HFET SOT115 High output 1000 MHz, 25 dB gain Power Doubler, GaAs HFET SOT115 High output 870 MHz, 35 dB gain Push Pull, GaAs HFET SOT115 NXP Semiconductors RF Manual 10th edition 2.2 RF diodes NXP varicaps: http://www.nxp.com/varicaps NXP RF PIN diodes: http://www.nxp.com/pindiodes NXP RF Schottky diodes: http://www.nxp.com/rfschottkydiodes 2.2.1 Varicap diodes Why choose NXP semiconductors’ varicap diodes: • Reference designs for TV and radio tuning • Direct matching process • Small tolerances • Short leadtimes • Complete portfolio covering broad frequency range and variety in package (including leadless) • Reliable volume supply Varicap diodes line-up per frequency VCO/VCXO 15 GHz WLAN 3 GHz VCO Bluetooth 1 GHz GPS BB145B BB199 BB202 30 MHz BB208-02/03 BB184 BB149 BB149A BB179 BB179B BB185 BB201 BB178 BB187 BB148 BB153 BB131 BB135 BB181 BB207 BB152 BB182 BB198 UHF 300 MHz UHF/VHF BB156 Cordless phone VHF 2V 4V 8V 10 V 28 V bra508 Many varicap diodes are or will be available in our new UTLP leadless package, look at our varicap portfolio in this chapter. Also more information on UTLP leadless packaging in Chapter X “Packing and Packaging”. NXP Semiconductors RF Manual 10th edition 29 VCO varicap diodes Type Package Type of connection BB145B BB202** BB202LX BB156 BB198 BB199 BB208-02* BB208-03* SOD523 SOD523 SOD882T SOD323 SOD523 SOD523 SOD523 SOD323 S S S S S S S S Cd @ Vr (pF) min 6.4 28.2 28.2 14.4 25 36.5 19.9 19.9 max 7.2 33.5 33.5 17.6 28.5 42.5 23.2 23.2 Cd @ Vr (pF) (V) 1 0.2 0.2 1 1 0.5 1 1 min 2.55 7.2 7.2 4.2 4.8 11.8 4.5 4.5 Bold = Highly recommended product Bold Red = New, highly recommended product * = Including special design for FM car radio (CREST-IC:TEF6860). ** = Including special design for mobile phone tuner ICs. max 2.95 11.2 11.2 5.4 6.8 13.8 5.4 5.4 TUNING RANGE Cd over voltage range (V) ratio (typ.) V1 to V2 2.2 min 1 4 2.5 min 0.2 2.3 2.5 min 0.2 2.3 3.3 1 7.5 2.8 min 0.5 2 3.7 – 5.2 1 7.5 3.7 – 5.2 1 7.5 (V) 4 2.3 2.3 7.5 4 2 7.5 7.5 rs (Ω) (typ.) 0.6 max 0.35 0,35 0.4 0.8 max 0.25 0.35 0.35 Type of connection: S: Single CC: Common Cathode Radio varicap diodes: FM radio tuning Type Package Type of connection BB201 BB202** BB202LX BB156 BB207* BB208-02* BB208-03* SOT23 SOD523 SOD882T SOD323 SOT23 SOD523 SOD323 CC S S S CC S S Cd @ Vr (pF) min 89 28.2 28.2 14.4 76 19.9 19.9 max 102 33.5 33.5 17.6 86 23.2 23.2 Cd @ Vr (pF) (V) 1 0.2 0.2 1 1 1 1 min 25.5 7.2 7.2 4.2 25.5 4.5 4.5 Bold = Highly recommended product Bold Red = New, highly recommended product * = Including special design for FM car radio (CREST-IC:TEF6860). ** = Including special design for mobile phone tuner ICs. max 29.7 11.2 11.2 5.4 29.7 5.4 5.4 TUNING RANGE Cd over voltage range (V) ratio (typ.) V1 to V2 3.1 1 7.5 2.5 0.2 2.3 2.5 0.2 2.3 2.7 1 7.5 2.6 1 7.5 3.7 – 5.2 1 7.5 3.7 – 5.2 1 7.5 (V) 7.5 2.3 2.3 7.5 7.5 7.5 7.5 rs (Ω) (typ.) 0.25 0.35 0,35 0.4 0.2 0.35 0.35 Type of connection: S: Single CC: Common Cathode TV & satellite varicap diodes - UHF tuning Type Package Matched BB149 BB149A BB179 BB179LX BB179B BB179BLX BB184 BB184LX Unmatched BB135 Cd @ Vr (pF) Type of connection min max (V) rs (Ω) MATCHED SETS TYPICAL APPLICATIONS (typ.) % TV VCO SAT. STB SOD323 SOD323 SOD523 SOD882T SOD523 SOD882T SOD523 SOD882T S S S S S S S S 1.90 1.951 1.951 1.951 1.90 1.90 1.87 1.87 2.25 2.225 2.225 2.225 2.25 2.25 2.13 2.13 28 28 28 28 28 28 10 10 9.0 9.0 9.0 9.0 9.0 9.0 7 7 1 1 1 1 1 1 1 1 28 28 28 28 28 28 10 10 0.75 0.75 0.75 max 0.65 0.75 max 0.65 0.65 0.65 2.0 2.0 2.0 2.0 2.0 2.0 2.0 2.0 X X X X X X X X X X X X - X X X X X X - SOD323 S 1.70 2.10 28 9.9 - 12 0.5 28 0.75 - X X - - Red = New Bold = Highly recommended product Bold Red = New, highly recommended product 30 TUNING RANGE Cd over voltage range (V) ratio (typ.) V1 to V2 NXP Semiconductors RF Manual 10th edition Type of connection: S: Single CC: Common Cathode TV & satellite varicap diodes - VHF tuning Type Matched BB148 BB152 BB153 BB178 BB178LX BB182 BB182LX BB185LX BB187 BB187LX Unmatched BB131 BB181 BB181LX BBY40 Package Cd @ Vr (pF) Type of connection min max (V) TUNING RANGE Cd over voltage range (V) ratio (typ.) V1 to V2 rs (Ω) MATCHED SETS TYPICAL APPLICATIONS (typ.) % TV VCO SAT. STB SOD323 SOD323 SOD323 SOD523 SOD882T SOD523 SOD882T SOD882T SOD523 SOD882T S S S S S S S S S S 2.4 2.48 2.361 2.361 2.361 2.48 2.48 2.45 2.57 2.57 2.75 2.89 2.754 2.754 2.754 2.89 2.89 2.97 2.92 2.92 28 28 28 28 28 28 28 10 25 25 15 22 15 15 15 22 22 12 11 min. 11 min 1 1 1 1 1 1 1 1 2 2 28 28 28 28 28 28 28 10 25 25 0.9 max 1.0 0.65 0.65 0.7 1.0 1.0 0.75 0.75 max 0.75 2.0 2.0 2.0 2.0 2.0 2.0 2.0 2.0 2.0 2.0 X X X X X X X X X X X - - X X X X X X X X X SOD323 SOD523 SOD882T SOT23 S S S 0.7 0.7 0.7 4.3 1.055 1.055 1.055 6.0 28 28 28 25 14 14 14 5.5 0.5 0.5 0.5 3 28 28 28 25 3 max 3 max 2.0 0.7 max - X X X X - X X X - X X X X Red = New Bold = Highly recommended product Bold Red = New, highly recommended product Type of connection: S: Single CC: Common Cathode NXP Semiconductors RF Manual 10th edition 31 2.2.2 PIN diodes Why choose NXP Semiconductors’ PIN diodes: • Broad portfolio • Unrivalled performance • Short leadtimes • Low series inductance • Low insertion loss • Low capacitance PIN diodes Type Package BAP50-02 BAP50-03 BAP50-04 BAP50-04W BAP50-05 BAP50-05W BAP50LX BAP51LX BAP51-02 BAP51-03 BAP51-04W BAP51-05W BAP51-06W BAP55LX BAP63-02 BAP63-03 BAP63-05W BAP63LX BAP64-02 BAP64-03 BAP64-04 BAP64-04W BAP64-05 BAP64-05W BAP64-06 BAP64-06W BAP64LX BAP65-02 BAP65-03 BAP65-05 BAP65-05W BAP65LX BAP70AM BAP70-02 BAP70-03 BAP70-04W BAP70-05 BAP1321-02 BAP1321-03 BAP1321-04 BAP1321LX BAP142LX SOD523 SOD323 SOT23 SOT323 SOT23 SOT323 SOD882T SOD882T SOD523 SOD323 SOT323 SOT323 SOT323 SOD882T SOD523 SOD323 SOT323 SOD882T SOD523 SOD323 SOT23 SOT323 SOT23 SOT323 SOT23 SOT323 SOD882T SOD523 SOD323 SOT23 SOT323 SOD882T SOT363 SOD523 SOD323 SOT323 SOT23 SOD523 SOD323 SOT23 SOD882T SOD882T Conf S S SS SS CC CC S S S S SS CC CA S S S CC S S S SS SS CC CC CA CA S S S CC CC S SS S S SS CC S S SS S S Limits RD (Ω) typ @ Vr(V) If(mA) 0.5mA 1 mA 10 mA 50 50 25 14 3 50 50 25 14 3 50 50 25 14 3 50 50 25 14 3 50 50 25 14 3 50 50 25 14 3 50 50 25 14 3 60 60 5.5 3.6 1.5 60 50 5.5 3.6 1.5 50 50 5.5 3.6 1.5 50 50 5.5 3.6 1.5 50 50 5.5 3.6 1.5 50 50 5.5 3.6 2 50 100 3.4 2.3 1 50 100 2.5 1.95 1.17 50 100 2.5 1.95 1.17 50 100 2.5 1.95 1.17 50 100 2.5 1.95 1.17 175 100 20 10 2 175 100 20 10 2 175 100 20 10 2 100 100 20 10 2 175 100 20 10 2 100 100 20 10 2 175 100 20 10 2 100 100 20 10 2 100 100 20 10 2 30 100 1 0.56 30 100 1 0.56 30 100 1 0.56 30 100 1 0.56 30 100 1 0.56 50 100 77 40 5.4 50 100 77 40 5.4 50 100 77 40 5.4 50 100 77 40 5.4 50 100 77 40 5.4 60 100 3.4 2.4 1.2 60 100 3.4 2.4 1.2 60 100 3.4 2.4 1.2 60 100 3.4 2.4 1.2 50 100 3.3 2.4 1 Bold = Highly recommended product Bold Red = New, highly recommended product S = Single SS = Series CC = Common Cathode CA = Common Anode 32 NXP Semiconductors RF Manual 10th edition 0V 0.4 0.4 0.45 0.45 0.45 0.45 0.45 0.4 0.4 0.4 0.4 0.4 0.4 0.27 0.36 0.4 0.4 0.4 0.48 0.48 0.52 0.52 0.52 0.52 0.52 0.52 0.52 0.65 0.65 0.65 0.65 0.65 0.57 0.57 0.57 0.57 0.57 0.4 0.4 0.4 0.4 0.26 Cd (pF) type @ 1V 20V 0.3 0.22 @ 5V 0.3 0.2 @ 5V 0.35 0.3 @ 5V 0.35 0.3 @ 5V 0.35 0.3 @ 5V 0.35 0.3 @ 5V 0.35 0.3 @ 5V 0.3 0.2 @ 5V 0.3 0.2 @ 5V 0.3 0.2 @ 5V 0.3 0.2 @ 5V 0.3 0.2 @ 5V 0.3 0.2 @ 5V 0.23 0.18 @ 5V 0.32 0.25 0.35 0.27 0.35 0.3 0.35 0.3 0.35 0.23 0.35 0.23 0.37 0.23 0.37 0.23 0.37 0.23 0.37 0.23 0.37 0.23 0.37 0.23 0.37 0.23 0.55 0.375 0.55 0.375 0.55 0.375 0.55 0.375 0.6 0.375 0.4 0.2 0.4 0.2 0.4 0.2 0.4 0.2 0.4 0.2 0.35 0.25 0.35 0.25 0.35 0.25 0.35 0.25 0.23 0.15 2.2.3 Band-switch diodes Why choose NXP Semiconductors’ bandswitch diodes: • Reliable volume supplier • Short leadtimes • Low series Inductance • Low Insertion loss • Low capacitance • High reverse Isolation Type Package BA277 BA278 BA891 BA591 BA792 BAT18 SOD523 SOD523 SOD523 SOD323 SOD110 SOT23 MAXIMUM RATINGS VR(V) IF(mA) 35 35 35 35 35 35 100 100 100 100 100 100 CHARACTERISTICS ; maximals Rd @ IF and f Cd @VR and f (mA) (MHz) (pF) (V) (MHz) Ω 0.7 2 100 1.2 6 1 0.7 2 100 1.2 6 1 0.7 3 100 0.9 3 1 0.7 3 100 0.9 3 1 0.7 3 200 1.1 3 1 to 100 0.7 5 200 1.0 20 1 Bold= Highly recommended product NXP Semiconductors RF Manual 10th edition 33 2.2.4 Schottky diodes Why choose NXP Semiconductors’ schottky diodes: • (Very) low diode capacitance • (Very) low forward voltage • Single and triple-isolated diode • (Ultra / very) small package Applications • Digital applications: - ultra high-speed switching - clamping circuits • RF applications: - diode ring mixer - RF detector - RF voltage doubler Low-capacitance Schottky diodes Type Package BAT17 PMBD353 PMBD354 1PS76SB17 1PS66SB17 1PS79SB17 1PS88SB82 1PS70SB82 1PS70SB84 1PS70SB85 1PS70SB86 1PS66SB82 1PS10SB82 SOT23 SOT23 SOT23 SOD323 SOT666 SOD523 SOT363 SOT323 SOT323 SOT323 SOT323 SOT666 SOD882 34 VR max. (V) 4 4 4 4 4 4 15 15 15 15 15 15 15 NXP Semiconductors RF Manual 10th edition IF max. (mA) 30 30 30 30 30 30 30 30 30 30 30 30 30 VF max. (mV) 450 @ IF = 1 mA 450 @ IF = 1 mA 450 @ IF = 1 mA 450 @ IF = 1 mA 450 @ IF = 1 mA 450 @ IF = 1 mA 340 @ IF = 1 mA 340 @ IF = 1 mA 340 @ IF = 1 mA 340 @ IF = 1 mA 340 @ IF = 1 mA 340 @ IF = 1 mA 340 @ IF = 1 mA CD max. (pF) 1 @ VR = 0 V 1 @ VR = 0 V 1 @ VR = 0 V 1 @ VR = 0 V 1 @ VR = 0 V 1 @ VR = 0 V 1 @ VR = 0 V 1 @ VR = 0 V 1 @ VR = 0 V 1 @ VR = 0 V 1 @ VR = 0 V 1 @ VR = 0 V 1 @ VR = 0 V 2.3 RF Bipolar transistors 2.3.1 Wideband transistors RF wideband transistors: http://www.nxp.com/rftransistors Why choose NXP Semiconductors’ wideband transistors: st th • Broad portfolio (1 - 7 generation) • Short leadtimes • Smallest packages • Volume delivery Wideband transistors The f T-IC curve represents Transition Frequency (f T) characteristics as a function of collector current (IC ) for the six generations of RF wideband transistors. A group of transistors having the same collector current (IC ) & similar transition frequencies (f T) represents a curve. The curve number matches products in the table, detailing their RF characteristics. Wideband transistors line-up per frequency bra510 100 (33) 7th generation fT (GHz) (27) (26) (32) (25) (31) (30) 10 (29) (21) (20) (19) (15) (14) (22) (7) (9) (8) (16) 3rd generation 2nd generation (1) 0.2 0.5 1 (3) 2 (12) (10) (4) 1 0.1 4th generation (23) (11) (18) 5th generation 5 10 1st generation 20 50 100 200 500 IC (mA) 1000 NXP Semiconductors RF Manual 10th edition 35 Wideband transistors (RF small signal) Curve Package Type BFG10(X) BFG10W/X BLT80 BLT81 BLT50 BLT70 BFS17 BFS17W BFT25 BFS17A BFG35 BFQ18A BFG25A/X BFG25AW/X BFG31 BFG590(/X) BFG92A(/X) BFQ149 BFR106 BFR92A BFR92AW BFR93AW BFS25A BFT25A BFT92 BFT92W BFT93 BFT93W BFG97 BFQ19 BFG93A(/X) BFG94 BFR93A(R) BFG135 BFG591 BFQ591 BFG198 BFG67(/X) BFQ67 BFQ67W PBR941 PBR951 PRF947 PRF957 BFG505(/X) BFG505W/X BFG520(/X) BFG520W(/X) BFG540(/X) BFG540W(/X/XR) BFG541 BFM505 BFM520 BFQ540 BFR505 BFR505T BFR520 BFR520T BFR540 BFS505 BFS520 BFS540 PRF949 BFG310W/XR BFG310/XR BFG325W/XR BFG325/XR BFG403W BFG21W BFG480W BFG410W BFG424F BFG424W BFG425W BFU725F 23 23 3 3 1 4 11 11 18 18 10 22 7 10 10 7 7 8 18 18 7 7 9 9 10 10 8 8 8 16 22 22 15 14 14 14 20 21 20 21 19 19 20 20 21 21 21 19 20 21 19 19 20 20 21 19 20 21 20 30 30 31 31 25 32 29 26 27 27 27 33 SOT143 SOT343 SOT223 SOT223 SOT223 SOT223 SOT23 SOT323 SOT23 SOT23 SOT223 SOT89 SOT143 SOT343 SOT223 SOT143 SOT143 SOT89 SOT23 SOT23 SOT323 SOT323 SOT323 SOT23 SOT23 SOT323 SOT23 SOT323 SOT223 SOT89 SOT143 SOT223 SOT23 SOT223 SOT223 SOT89 SOT223 SOT143 SOT23 SOT323 SOT23 SOT23 SOT323 SOT323 SOT143 SOT343 SOT143 SOT343 SOT143 SOT343 SOT223 SOT363 SOT363 SOT89 SOT23 SOT416 SOT23 SOT416 SOT23 SOT323 SOT323 SOT323 SOT416 SOT343XR SOT143XR SOT343XR SOT143XR SOT343 SOT343 SOT343 SOT343 SOT343F SOT343 SOT343 SOT343F FT Vceo (GHz) (V) 8 10 10 9.5 10 8 1 15 1.6 15 2.3 5 2.8 15 4 18 4 18 5 5 5 5 5 15 5 15 5 15 5 15 5 15 5 15 5 15 5 12 5 5 5 5 5 15 4 15 5 12 5 12 5.5 15 5.5 15 6 12 6 12 6 12 7 15 7 15 7 15 8 10 8 10 8 10 8 10 8 10 8 10 8.5 10 8.5 10 9 15 9 15 9 15 9 15 9 15 9 15 9 15 9 8 9 8 9 15 9 15 9 15 9 15 9 9 15 9 15 9 15 9 15 9 10 14 6 14 6 14 6 14 6 17 4.5 18 4.5 21 4.5 22 4.5 25 4.5 25 4.5 25 4.5 70 2.9 Bold= Highly recommended product Bold Red = New, highly recommended product 36 NXP Semiconductors RF Manual 10th edition Ic Ptot Polarity GUM (mA) (mW) (dB) 250 250 NPN 250 400 NPN 250 2000 NPN >6 500 2000 NPN >6.5 500 2000 NPN 10 250 2100 NPN >6 25 300 NPN 50 300 NPN 6.5 30 NPN 18 25 300 NPN 13.5 150 1000 NPN 15 150 1000 NPN 6.5 32 NPN 18 6.5 500 NPN 16 100 1000 PNP 16 200 400 NPN 13 25 400 NPN 16 100 1000 PNP 12 100 500 NPN 11.5 25 300 NPN 14 25 300 NPN 14 35 300 NPN 13 6.5 32 NPN 13 6.5 32 NPN 15 25 300 PNP 18 35 300 PNP 17 35 300 PNP 16.5 50 300 PNP 15.5 100 1000 NPN 16 100 1000 NPN 11.5 35 300 NPN 16 60 700 NPN 19 35 300 NPN 13 150 1000 NPN 16 200 2000 NPN 13 200 2000 NPN 11 100 1000 NPN 18 50 380 NPN 17 50 300 NPN 14 50 300 NPN 13 50 360 NPN 15 100 365 NPN 14 50 250 NPN 16 100 270 NPN 15 18 150 NPN 20 18 500 NPN 19 70 300 NPN 19 70 500 NPN 17 120 500 NPN 18 120 500 NPN 16 120 650 NPN 15 18 500 NPN 17 70 1000 NPN 15 120 1200 NPN 18 150 NPN 17 18 150 NPN 17 70 300 NPN 15 70 150 NPN 15 120 500 NPN 14 18 150 NPN 17 70 300 NPN 15 120 500 NPN 14 50 150 NPN 16 10 60 NPN 18 10 60 NPN 18 35 210 NPN 18.3 35 210 NPN 18.3 3.6 16 NPN 20 500 600 NPN 250 360 NPN 12 54 NPN 30 135 NPN 30 135 NPN 30 135 NPN 40 NPN 25 NF (dB) 4.5 4.5 3.8 2.5 1.8 2 2 3.75 3.5 2.1 2 1.5 1.8 1.8 2.5 2.5 2.4 2.4 3.3 1.7 2.7 1.9 1.7 1.7 1.3 1.4 1.3 1.5 1.3 1.6 1.6 1.6 1.1 1.3 1.3 1.3 1.1 1.2 1.9 1.2 1.2 1.1 1.1 1.3 1.2 1.1 1.3 1.5 1.0 1.0 1.1 1.1 1 1.2 0.9 0.8 0.8 0.8 0.7 @ (MHz) 900 900 470 900 500 500 500 800 500 1000 1000 500 900 1000 500 800 1000 1000 1000 1000 1000 500 500 500 500 500 500 1000 500 1000 500 900 900 500 1000 1000 1000 1000 1000 1000 1000 900 900 900 900 900 900 900 900 900 900 900 900 900 900 900 900 900 900 1000 1000 1000 3000 3000 900 900 900 900 900 900 2400 GUM (dB) 7 7 12 11 8 12 7.5 11 8 8 8 11 10 12 7.5 10 13.5 12 7.5 5.5 15 10 8 8 9.5 8 10 9.2 13 12 13 11 11 10 9 10 9 10 9 9 7 10 9 8 10 2.2 10 16 21 23 22 20 17 NF (dB) 3 3 3 2.1 3 3 2.3 3 3 2.5 2.7 2.7 2 2 2.1 1.8 1.9 1.9 1.9 1.85 2.1 2.1 2.1 1.9 1.9 1.9 1.9 1.9 2.1 1.9 1.9 2.1 2.1 1.6 1.8 1.2 1.2 1.2 1.2 0.7 @ (MHz) 1900 1900 800 800 2000 800 2000 2000 2000 2000 2000 1000 1000 800 800 2000 1000 2000 800 2000 2000 800 2000 2000 2000 2000 2000 2000 2000 2000 2000 2000 2000 2000 2000 2000 2000 2000 2000 2000 2000 2000 2000 2000 2000 2000 2000 1900 2000 2000 2000 2000 2000 5800 Vo (mV) 150 750 550 350 150 150 300 700 500 425 850 700 700 275 275 500 500 500 500 550 - P1 (1dB) ITO (dBm) (dBm) 21.5 34 4 10 1 10 17 26 17 26 21 34 21 34 21 34 4 10 17 26 17 26 21 34 4 10 17 26 21 34 1.8 8.5 1.8 8.5 8.7 19.4 8.7 19.4 5 6 20 28 5 15 12 22 12 22 12 22 8 19 @ Ic & Vce (mA) (V) 14 10 100 10 70 10 50 9 14 10 14 10 30 5 70 10 45 10 30 8 100 10 70 12 70 8 5 6 5 6 20 6 20 6 40 8 40 8 40 8 40 8 5 6 20 6 40 8 5 6 20 6 40 8 5 3 5 3 15 3 15 3 1 1 80 2 10 2 25 2 25 2 25 2 25 2 Whatifyoucouldimprovethe receptionofyoursmartphone? LookatBAWfiltersandduplexers,chapter5.1 NXPSemiconductorsRFManual10thedition 3 2.4 RF ICs 2.4.1 MMICs NXP RF MMICs: http://www.nxp.com/mmics Why choose NXP Semiconductors’ MMICs: • Reduced RF component count • Easy circuit design-in • Reduced board size • Short time-to-market • Broad portfolio • Volume delivery • Short leadtimes General-purpose wideband amplifiers (50 Ohm gain blocks) Type Package BGA2711 BGA2748 BGA2771 BGA2776 BGA2709 BGA2712 BGM1011 BGM1012 BGM1013 BGM1014 BGA2714 BGA2715 BGA2716 BGA2717 SOT363 SOT363 SOT363 SOT363 SOT363 SOT363 SOT363 SOT363 SOT363 SOT363 SOT363 SOT363 SOT363 SOT363 @ Vs (V) 5 3 3 5 5 5 5 3 5 5 3 5 5 5 Fu (1) Is @-3dB (mA) (GHz) 12.6 3.6 (2) 5.7 1.9 33.3 2.4 24.4 2.8 23.5 3.6 12.3 3.2 25.5 (2) 14.6 3.6 27.5 2.1 21.0 (2) 2.5 4.58 2.7 4.3 (2) 3.3 15.9 (2) 3.2 8.0 3.2 NF (dB) 4.8 1.9 (2) 4.5 4.9 4.0 3.9 4.7 4.8 4.6 4.2 2.2 2.6 5.3 2.3 (2) @ 1GHz Psat Gain (3) (dBm) (dB) 2.8 13.1 -2.3 21.8 13.2 (2) 21.4 10.5 23.2 (2) 12.5 22.7 4.8 21.3 13.8 30 (2) 9.7 20.1 14.0 35.5 (2) 12.9 32.3 -3.4 20.4 -4.0 21.7 11.6 22.9 1.4 23.9 P1dB OIP3 (dBm) (dBm) -0.7 8.3 -9.2 -1.9 12.1 21.9 7.2 18.6 8.3 22 0.2 11 12.2 23 5.6 18 12.0 22.7 11.2 20.5 -7.9 2.1 -8.0 2.3 8.9 22.2 -2.6 10.0 100 MHz 13.0 14.8 20.3 22.4 22.2 20.8 25.0 19.5 35.2 30.0 20.8 13.3 22.1 18.6 Gain (3) (dB) @ 2.2 2.6 GHz GHz 14.1 13.8 17.6 15.0 20.4 17.9 23.2 21.8 23.0 22.1 21.9 21.2 37.0 32.0 20.4 19.9 31.8 29.7 34.1 30.5 20.8 19.4 23.3 22.1 22.8 22.1 25.1 24.0 3.0 GHz 12.7 11.9 15.5 19.3 21.1 19.3 28.0 18.7 26.1 26.4 16.8 20.1 20.8 22.1 Vs (V) 6 4 4 6 6 6 6 4 6 6 4 6 6 6 Limits Is Ptot (mA) (mW) 20 200 15 200 50 200 34 200 35 200 25 200 35 200 50 200 35 200 30 200 10 200 8 200 25 200 15 200 Bold Red = New, highly recommended product Notes: (1) Upper -3 dB point, to gain at 1 GHz. (2) Optimized parameter (3) Gain = |S 21|2 2-stage variable-gain linear amplifier Type Package BGA2031/1 SOT363 @ Vs (V) 3 Is (mA) 51 Frequency Range 800-2500 @ 900MHz @1900 MHz Gain (1) DG (2) P1dB ACPR Gain (1) DG (2) P1dB ACPR (dB) (dB) (dBm) (dBc) (dB) (dB) (dBm) (dBc) 24 62 11 49 23 56 13 49 Vs (V) 3.3 Limits Is Ptot (mA) (mW) 77 200 Vs (V) 4 Limits Is Ptot (mA) (mW) 10 40 Notes: (1) Gain = GP, power gain. (2) DG = Gain control range Wideband linear mixer Type Package BGA2022 SOT363 @ Vs (V) 3 Is (mA) 6 RF Input Frequency Range 800-2500 IF Output Frequency Range 50-500 NF (dB) 9 @ 880MHz @1900 MHz Gain (1) OIP3 NF Gain (1) OIP3 (dB) (dBm) (dB) (dB) (dBm) 5 4 9 6 10 Notes: (1) Gain = GP, power gain. (2) DG = Gain control range Low-noise wideband amplifiers Type Package BGA2001 BGA2003 BGA2011 BGA2012 SOT343R SOT343R SOT363 SOT363 @ Vs (V) 2.5 2.5 3 3 Is (mA) 4 10 (2) 15 7 NF (dB) 1.3 1.8 1.5 - Notes: (1) MSG (2) Adjustable bias (3) |S 21|2 38 NXP Semiconductors RF Manual 10th edition @ 900MHz Gain IIP3 (dB) (dBm) 22 (1) -7.4 24 (1) -6.5 19 (3) 10 - @1800 MHz NF Gain IIP3 (dB) (dB) (dBm) 1.3 19.5 (1) -4.5 1.8 16 (1) -4.8 1.7 16 (3) 10 100 MHz 20 26 24 22 Gain (3) (dB) @ 1 2.6 GHz GHz 17.1 11.6 18.6 11.1 14.8 8 18.2 11.6 3.0 GHz 10.7 10.1 6.5 10.5 Vs (V) 4.5 4.5 4.5 4.5 Limits Is Ptot (mA) (mW) 30 135 30 135 30 135 15 70 General-purpose, med. power ampl. (50 ohm gain blocks) Type BGA6289 BGA6489 BGA6589 Package SOT89 SOT89 SOT89 @ Vs (1) (V) 4.1 5.1 4.8 Is (mA) 84 78 81 NF (dB) 3.5 3.1 3.0 @ 900MHz Gain (2) OIP3 P1dB (dB) (dBm) (dBm) 15 31 17 20 33 20 22 33 21 NF (dB) 3.7 3.3 3.3 @1800 MHz Gain (2) OIP3 P1dB (dB) (dBm) (dBm) 13 28 15 16 30 17 17 32 20 Gain (2) 2.5 GHz 12 15 15 Vs (1) (V) 6 6 6 Limits Is Ptot (mA) (mW) 120 480 120 480 120 480 Notes: (1) Device voltage without bias resistor. (2) Gain = |S 21|2 2.4.2 Satellite LNB RF ICs Why choose NXP Semiconductors’ RF ICs: • Lowest total cost of ownership • Alignment free concept • Easy circuit design-in • Improved LO stability Satellite LNB Downconverter ICs Package TFF1000HN TFF1004HN Input frequency range Conversion gain Noise figure Output IP3 Switched LO frequency (GHz) Gc (dB) NF (dB) IP3(out) (dB) (GHz) 10.7 to 12.75 10.7 to 12.75 42 32 9 9 10 10 9.75 / 10.6 9.75 / 10.6 Package Supply voltage Drain voltage Drain current Supply current Polarisation detection voltage VCC (V) V D (V) IDO (mA) ICC (mA) VPOL (V) SOT360 SOT403 3.3 or 5 3.3 or 5 2 2.2 10 10 6 6 14.75 - SOT616 SOT616 Satellite LNB Biasing ICs UAF3000TS UAF4000TS 2.4.3 WiMAX RF ICs Why choose NXP Semiconductors’ RF WiMAX transceivers: • Extremely low noise figure • Support for flexible calibration techniques ensures optimum performance and lowest power • Field proven solution • No external IF filter required • Minimal external component requirement RF WiMAX transceivers UXA23465 UXA23466 UXA23475 UXA23476 UXF23480 UXF23460 UXA23470 Frequency range (GHz) Type NF (dB) Rx gain (max) ICC (mA) RX/TX Tx gain range (dB) 2.3 - 2.7 2.3 - 2.7 3.3 - 3.8 3.3 - 3.8 2.3 - 2.4 2.5 - 2.7 3.3 - 3.8 2 Rx/1 Tx 2 Rx/2 Tx 2 Rx/1 Tx 2 Rx/2 Tx 1 Rx/1 Tx 1 Rx/1 Tx 2 Rx/1 Tx 2,5 2,5 3 3 3,2 3,5 3 87 87 87 87 79 77 87 81/78 81/140 83/85 83/154 129/153 129/140 50/85 74 74 74 74 74 74 74 Linear output power meeting spectrum mask (dBm) +2.5 (TTA) +1 (ETSI, FCC) +2.5 (TTA) +1 (ETSI, FCC) 0 (ETSI) 0 (ETSI) +1 +2 (0) ETSI Package size HVQFN48 (mm) 6 x 6 x 0.85 6 x 6 x 0.85 6 x 6 x 0.85 6 x 6 x 0.85 7 x 7 x 0.85 7 x 7 x 0.85 6 x 6 x 0.85 Bold Red = New, highly recommended product NXP Semiconductors RF Manual 10th edition 39 2.5 RF MOS transistors 2.5.1 JFETs NXP RF FETs: http://www.nxp.com/rffets Why choose NXP Semiconductors’ JFETs: • Reliable volume supplier • Short leadtimes • Broad portfolio N-channel junction field-effect transistors for switching Type Package BSR56 BSR57 BSR58 PMBFJ108 PMBFJ109 PMBFJ110 PMBFJ111 PMBFJ112 PMBFJ113 J108 J109 J110 J111 J112 J113 PMBF4391 PMBF4392 PMBF4393 SOT23 SOT23 SOT23 SOT23 SOT23 SOT23 SOT23 SOT23 SOT23 SOT54 SOT54 SOT54 SOT54 SOT54 SOT54 SOT23 SOT23 SOT23 VDS (V) max 40 40 40 25 25 25 40 40 40 25 25 25 40 40 40 40 40 40 IG (mA) max 50 50 50 50 50 50 50 50 50 50 50 50 50 50 50 50 50 50 I DSS (mA) min max 50 20 100 8 80 80 40 10 20 5 2 80 40 10 20 5 2 50 150 25 75 5 30 -Vgsoff (V) min max 4 10 2 6 0.8 4 3 10 2 6 0.5 4 3 10 1 5 0.5 3 3 10 2 6 0.5 4 3 10 1 5 0.5 3 4 10 2 5 0.5 3 CHARACTERISTICS R DSON Crs (pF) (Ω) max min max 25 5 40 5 60 5 8 15 12 15 18 15 30 typ.3 50 typ.3 100 typ.3 8 15 12 15 18 15 30 typ.3 50 typ.3 100 typ.3 30 3.5 60 3.5 100 3.5 t on (ns) typ 4 4 4 13 13 13 4 4 4 13 13 13 - t off (ns) max 15 15 15 typ 6 6 6 35 35 35 6 6 6 35 35 35 - max 25 50 100 20 35 50 P-channel junction field-effect transistors for switching Type Package PMBFJ174 PMBFJ175 PMBFJ176 PMBFJ177 J174 J175 J176 J177 40 SOT23 SOT23 SOT23 SOT23 SOT54 SOT54 SOT54 SOT54 VDS (V) max 30 30 30 30 30 30 30 30 IG (mA) max 50 50 50 50 50 50 50 50 I DSS (mA) min max 20 135 7 70 2 35 1.5 20 20 135 7 70 2 35 1.5 20 NXP Semiconductors RF Manual 10th edition -Vgsoff (V) min max 5 10 3 6 1 4 0.8 2.25 5 10 3 6 1 4 0.8 2.25 CHARACTERISTICS R DSON Crs (pF) (Ω) max min max 85 typ.4 125 typ.4 250 typ.4 300 typ.4 85 typ.4 125 typ.4 250 typ.4 300 typ.4 t on (ns) typ 7 15 35 45 7 15 35 45 t off (ns) max - typ 15 30 35 45 15 30 35 45 max - N-channel junction field-effect transistors for general RF applications Type Package VDS (V) max IG (mA) max I DSS (mA) min max CHARACTERISTICS Vgs off |Yfs| (mS) (V) min max min max DC, LF and HF amplifiers BF245A SOT54 30 10 2 6.5 <8 BF245B SOT54 30 10 6 15 <8 BF245C SOT54 30 10 12 25 <8 BF545A SOT23 30 10 2 6.5 0.4 7.5 BF545B SOT23 30 10 6 15 0.4 7.5 BF545C SOT23 30 10 12 25 0.4 7.5 BF556A SOT23 30 10 3 7 0.5 7.5 BF556B SOT23 30 10 6 13 0.5 7.5 BF556C SOT23 30 10 11 18 0.5 7.5 Pre-amplifiers for AM tuners in car radios BF861A SOT23 25 10 2 6.5 0.2 1.0 BF861B SOT23 25 10 6 15 0.5 1.5 BF861C SOT23 25 10 12 25 0.8 2 BF862 SOT23 20 10 10 25 0.3 2 RF stages FM portables, car radios, main radios & mixer stages BF5101) SOT23 20 10 0.7 3 typ. 0.8 BF5111) SOT23 20 10 2.5 7 typ. 1.5 BF5121) SOT23 20 10 6 12 typ. 2.2 BF5131) SOT23 20 10 10 18 typ. 3 Low-level general purpose amplifiers BFR30 SOT23 25 5 4 10 <5 BFR31 SOT23 25 5 1 5 <2.5 General-purpose amplifiers BFT46 SOT23 25 5 0.2 1.5 <1.2 AM input stages UHF/VHF amplifiers PMBFJ308 SOT23 25 50 12 60 1 6.5 PMBFJ309 SOT23 25 50 12 30 1 4 PMBFJ310 SOT23 25 50 24 60 2 6.5 PMBFJ620 SOT363 25 50 24 60 2 6.5 Crs (pF) min max 3 6.5 3 6.5 3 6.5 3 6.5 3 6.5 3 6.5 4.5 4.5 4.5 - Typ.=1.1 Typ.=1.1 Typ.=1.1 0.8 0.8 0.8 0.8 0.8 0.8 - 12 16 20 35 2.1 2.1 2.1 typ=1.9 2.7 2.7 2.7 - 0.4 0.4 0.4 0.4 0.5 0.5 0.5 0.5 1.5 1.5 - >1 1.5 - >10 >10 >10 10 1.3 1.3 1.3 1.3 2.5 2.5 2.5 2.5 20 25 30 2.5 4 6 7 1 1.5 4 4.5 Bold= Highly recommended product 1) Asymmetrical NXP Semiconductors RF Manual 10th edition 41 2.5.2 MOSFETs Why choose NXP Semiconductors’ MOSFETs: • Reference designs for TV tuning • Short leadtimes • Broad portfolio • Smallest packages • 2-in-1 FETs for tuner applications • Reliable volume supply • Best performance MOSFETs for TV tuning N-channel, single MOSFETs for switching Type Package BSS83 SOT143 Silicon RF Switches BF1107 SOT23 BF11085) SOT143B BF1108R5) SOT143R VDS (V) max 10 ID (mA) max 50 3 3 3 10 10 10 I DSS (mA) min max - 1003) 1003) 1003) V (p)GS (V) min max 0.12) 21) - 74) 74) 74) R DSON (Ω) max 45 20 20 20 CHARACTERISTICS Crs t on (pF) (ns) min max typ max typ.0.6 1 - - - t off (ns) - typ - max 5 |S21(on) |2 (dB) max - - - 2.5 3 3 Bold= Highly recommended product N-channel, dual-gate MOSFETs Type Package With external bias BF908 SOT143 BF908R SOT143R BF908WR SOT343R BF991 SOT143 BF992 SOT143 BF994S SOT143 BF996S SOT143 BF998 SOT143 BF998R SOT143R BF998WR SOT343R Fully internal bias BF1105 SOT143 BF1105R SOT143R BF1105WR SOT343R BF1109 SOT143 BF1109R SOT143R BF1109WR SOT343R Partly internal bias BF904(A) SOT143 BF904(A)R SOT143R BF904(A)WR SOT343R BF909(A) SOT143 BF909(A)R SOT143R BF909(A)WR SOT343R 3) 4) 5) 1) 2) 42 VDS ID I DSX (mA) min max V (th)gs (V) min max CHARACTERISTICS |Yfs| Cis Cos (mS) (pF) (pF) min max typ typ F @ 800 MHz (dB) typ VHF UHF 1.7 1.7 1.7 1.1 2 1 0.8 1.05 1.05 1.05 1.5 1.5 1.5 1 1.27) 17) 1.8 1 1 1 X X X X X X X X X X X X X X X X 2.2 9) 2.2 9) 2.2 9) 2.2 9) 2.2 9) 2.2 9) 1.28) 1.28) 1.28) 1.3 8) 1.3 8) 1.3 8) 1.7 1.7 1.7 1.5 1.5 1.5 X X X X X X X X X X X X 2.2 2.2 2.2 3.6 3.6 3.6 1.3 1.3 1.3 2.3 2.3 2.3 2 2 2 2 2 2 X X X X X X X X X X X X (V) max (mA) max 12 12 12 20 20 20 20 12 12 12 40 40 40 20 40 30 30 30 30 30 3 3 3 4 4 4 2 2 2 27 27 27 25 20 20 18 18 18 - -2 -2 -2 -2.5 -1.3 -2.5 -2.5 -2.0 -2.0 -2.5 36 36 36 10 20 15 15 21 21 22 50 50 50 - 3.1 3.1 3.1 2.1 4 2.5 2.3 2.1 2.1 2.1 7 7 7 11 11 11 30 30 30 30 30 30 8 8 8 8 8 8 16 16 16 16 16 16 0.3 0.3 0.3 0.3 0.3 0.3 1.26) 1.26) 1.26) 1.26) 1.26) 1.26) 25 25 25 24 24 24 - 7 7 7 7 7 7 30 30 30 40 40 40 8 8 8 12 12 12 13 13 13 20 20 20 0.3 0.3 0.3 0.3 0.3 0.3 16) 16) 16) 16) 16) 16) 22 22 22 36 36 36 30 30 30 50 50 50 Asymmetrical VGS(th) ID VSG Depletion FET plus diode in one package NXP Semiconductors RF Manual 10th edition 8) 9) 6) 7) VGS (th) @ 200 MHz C OSS C ig |S21(off) |2 (dB) min - MODE 30 30 30 depl. depl. depl. enh. N-channel, dual-gate MOSFETs Type Package Partly internal bias BF1100 SOT143 BF1100R SOT143R BF1100WR SOT343R BF1101 SOT143 BF1101R SOT143R BF1101WR SOT343R BF1102(R)10) SOT363 BF1201 SOT143 BF1201R SOT143R BF1201WR SOT343R BF1202 SOT143 BF1202R SOT143R BF1202WR SOT343R BF120311) SOT363 BF120410) BF1205C11)12)13) SOT363 SOT363 BF120511)12)13) SOT363 BF1206 SOT363 11) BF1206F11) SOT666 11)13)14) BF1207 SOT363 BF120811)12)13) SOT666 BF1208D SOT666 BF121011)12) SOT363 BF1212 SOT363 11)12)13) 11)12) BF1211 BF1211R BF1211WR BF1212 BF1212R BF1212WR BF121410) SOT143 SOT143R SOT343 SOT143 SOT143R SOT343 SOT363 VDS ID (V) max (mA) max 14 14 14 7 7 7 7 10 10 10 10 10 10 10 10 10 6 6 10 7 6 6 6 6 6 6 6 6 6 6 6 6 6 6 6 6 6 6 6 6 6 30 30 30 30 30 30 40 301) 301) 301) 30 30 30 30 30 30 30 30 30 30 30 30 30 30 30 30 30 30 30 30 30 30 30 30 30 30 30 30 30 30 30 I DSX (mA) min max 8 8 8 8 8 8 12 11 11 11 8 8 8 11 8 8 14 9 8 8 14 9 3 3 13 9 14 9 14 10 14 9 14 9 11 11 11 8 8 8 13 13 13 13 16 16 16 20 19 19 19 16 16 16 19 16 16 24 17 16 16 23 17 6.5 6.5 23 19 24 17 24 20 24 17 24 17 19 19 19 16 16 16 23 V (th)gs (V) min max 0.3 0.3 0.3 0.3 0.3 0.3 0.3 0.3 0.3 0.3 0.3 0.3 0.3 0.3 0.3 0.3 0.3 0.3 0.3 0.3 0.3 0.3 0.3 0.3 0.3 0.3 0.3 0.3 0.3 0.3 0.3 0.3 0.3 1.3 0.3 0.3 0.3 0.3 0.3 0.3 0.3 1.26) 1.26) 1.26) 16) 16) 16) 1.26) 1.26) 1.26) 1.26) 1.26) 1.26) 1.26) 1.26) 1.2 1.26) 1 1 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1 1 1 1 1 1 1 1 1.0 1.0 1.0 1.0 1.0 1.0 1.0 CHARACTERISTICS |Yfs| Cis Cos (mS) (pF) (pF) min max typ typ 24 24 24 25 25 25 36 23 23 23 25 25 25 23 25 25 26 28 26 26 33 29 17 17 25 26 26 28 26 25 26 28 26 28 25 25 25 28 28 28 25 33 33 33 35 35 35 40 40 40 35 40 40 41 43 40 40 48 44 32 32 40 41 41 43 41 40 41 43 41 48 40 40 40 43 43 43 35 2.2 2.2 2.2 2.2 2.2 2.2 2.89) 2.6 2.6 2.6 1.7 1.7 1.7 2.6 1.7 1.7 2.2 2 1.8 2.0 2.4 1.7 2.4 1.7 2.2 1.8 2.2 2 2.1 2.1 2.2 2 2.2 2 2.1 2.1 2.1 1.7 1.7 1.7 2.2 1.4 1.4 1.4 1.28) 1.28) 1.28) 1.6 8) 0.9 0.9 0.9 0.85 0.85 0.85 0.9 0.85 0.85 0.9 0.85 0.75 0.85 1.1 0.85 1.1 0.85 0.9 0.8 0.9 0.85 0.8 0.85 0.9 0.85 0.9 0.85 0.9 0.9 0.9 0.9 0.9 0.9 0.9 F @ 800 MHz (dB) typ VHF UHF 2 2 2 1.7 1.7 1.7 2 1.9 1.9 1.9 1.1 1.1 1.1 1.9 1.1 1.1 1.4 1.4 1.2 1.4 1.6 1.4 1.1 1.0 1.4 1.4 1.4 1.4 1.1 1.4 1.4 1.4 1.4 1.4 1.3 1.3 1.3 1.1 1.1 1.1 1.4 X X X X X X X X X X X X X X X X X X X X X X X X X X X X X X X X X X X X X X X X X X X X X X X X X X X X X X X X Red = New Bold= Highly recommended product Bold Red = New, highly recommended product 1) 3) 4) 5) 7) 8) 2) Asymmetrcal VGS(th) I D VSG Depletion FET plus diode in one package @200 MHz C OSS C ig Two equal dual gate MOSFETs in one package 11) Two low noise gain amplifiers in one package 12) Transistor A: fully internal bias, transistor B: partly internal bias 13) Internal switching function 14) Transistor A: partly internal bias, transistor B: fully internal bias 9) 10) NXP Semiconductors RF Manual 10th edition 43 2.6 RF Modules NXP RF CATV-HFC modules: http://www.nxp.com/catv infrastructure networks deployed in India. Both families will be extended in the following months to cover most of those two specific market segments. Why choose NXP Semiconductors’ RF Modules: • Excellent linearity, stability and reliability • Rugged construction • Extremely low noise • High power gain • Low total cost of ownership CATV types for Chinese (C-types) and Indian market (OM-types) New in our CATV Hybrid portfolio are two families of products. The C types are specially designed for the Chinese market, fitting two major governmental projects. And the OM types, also called the INDI types, are designed for low-end CATV C types (China) • CATV push pulls, chapter 2.6.2 : BGY588C and BGE788C • CATV power doublers, chapter 2.6.3 : BGD712C • CATV optical receivers, chapter 2.6.4 : BGO807C OM types (India) • CATV push pulls, chapter 2.6.2 : OM7650 and OM7670 2.6.1 CATV Reverse Hybrids Frequency range 5 -65 MHz 5 -75 MHz 5 -120 MHz 5 -200 MHz Type number BGS67A BGY68 BGY66B BGY67 BGY67A Gain (dB) 25 - 26 29.2 - 30.8 24.5 - 25.5 21.5 - 22.5 23.5 - 24.5 Slope (dB) -0.1 - 0.6 -0.2 - 0.5 -0.2 - 0.5 -0.2 - 0.5 -0.2 - 0.5 FL RL IN /RL OUT CTB XMOD CSO @ Ch ± 0.2 ± 0.2 ± 0.2 ± 0.2 ± 0.2 20/20 20/20 20/20 20/20 20/20 -64 -68 -66 -67 -67 -54 -60 -54 -60 -59 - 4 4 14 22 22 FL RL IN /RL OUT CTB XMOD CSO @ Ch ± 0.5 ± 0.2 ± 0.2 ± 0.4 ± 0.4 ± 0.2 ± 0.2 ± 0.3 ± 0.6 ± 0.5 ± 0.5 ± 0.5 ± 0.3 ± 0.5 ± 0.3 ± 0.3 ± 0.3 ± 0.5 ± 0.5 ± 0.5 ± 0.6 ± 0.5 ± 0.5 ± 0.3 10/10 16/16 20/20 20/20 20/20 20/20 20/20 20/20 10/8 20/20 16/16 20/20 20/20 20/20 20/20 14/14 20/20 20/20 20/20 20/21 24/23 20/20 21/21 20/20 20/20 20/20 -45 -57 -59 -57 -57 -57 -55 -54 -43 -53 -49 -53 -50 -49 -61 -61 -55 -62 -57.5 -68 -60 -60 -60 -53 -62 -58 -60 -59 -60 -54 -56 -52 -54 -51 -61 -61 -61 -56 -51 -59 -60 -59 -54 -57 -62 -59 -54 -57 -62 -56 -52 -54 -53 -52 -53 -56 -52 -61 -61 -57 -59 -58 -66 -55 -60 -55 -56 77 77 77 77 77 77 85 85 110 110 110 110 110 110 49 129 129 49 129 129 132 112 49 49 49 150 @ Vo (dBmV) 50 50 48 50 50 F @ fmax @ Vo (dBmV) 44 44 44 44 44 44 44 44 44 44 44 44 44 44 44 59 59 44 40 40 44 44 44 44 44 44 F @ fmax 3.5 3.5 5 5.5 5.5 Itot (mA) 85 135 135 230 230 2.6.2 CATV Push-Pulls Frequency range 40 - 550 MHz 40 - 600 MHz 40 - 750 MHz 40 - 870 MHz 40 -1000 MHz Type number OM7650 BGY588C BGY585A BGY587 BGY587B BGY588N BGY685A BGY687 OM7670 BGY785A BGE788C BGY787 BGE787B BGE788 BGY883 BGE885 BGX885N BGY885A BGY887 CGY887A CGY887B CGY888C BGY835C BGY887B BGY888 BGY1085A Gain (dB) 33.2 - 35.5 33.2 - 35.5 17.7 - 18.7 21.5 - 22.5 26.2 - 27.8 33.5 - 35.5 17.7 - 18.7 21 - 22 33.2 - 35.2 18 - 19 33.2 - 35.2 21 - 22 28.5 - 29.5 33.5 - 34.5 14.5 - 15.5 16.5 - 17.5 16.5 - 17.5 18 - 19 21 - 22 25.2 - 25.8 27.2 - 27.8 34.5 - 36.5 33.5 - 34.5 28.5 - 29.5 33.5 - 34.5 18 - 19 Bold Red = New, highly recommended product 44 NXP Semiconductors RF Manual 10th edition Slope (dB) 0.2 - 2 0.2 - 1.7 0.5 - 2 0.2 - 1.5 0.5 - 2.5 0.5 - 1.5 0.5 - 2.2 0.8 - 2.2 1/4 0-2 0.3 - 2.3 0 - 1.5 0.2 - 2.2 0.5 - 2.5 0-2 0.2 - 1.2 0.2 - 1.4 0-2 0.2 - 2 0.5 - 1.4 0.5 - 1.5 0.5 - 2.5 0.5 - 2.5 0.5 - 2.5 0.5 - 2.5 0-2 8 8 8 7 6.5 6 8.5 6.5 8 7 8 6.5 7 7 8.5 8 8 8 6.5 5 5 4.0 7.0 6.5 7 7.5 Itot (mA) 340 345 240 240 340 340 240 240 340 240 325 240 320 320 235 240 240 240 235 240 310 280 340 340 340 240 2.6.3 CATV power doublers Frequency range 40 - 550 MHz Type number BGD502 BGD702 BGD702N BGD712 40 -750 MHz BGD712C BGD704 BGD714 BGD885 BGD802 BGD812 BGD902 BGD902L CGD923 40 - 870 MHz BGD804 BGD814 BGD904 BGD904L CGD914 BGD816L BGD906 CGD944C 40 -870 MHz CGD942C CGD1042 CGD1044 40 - 1000 MHz CGD1042H CGD1044H Gain (dB) 18 - 19 18 - 19 18 - 19 18.2 - 18.8 18.2 - 18.8 19.5 - 20.5 20 - 20.6 16.5 - 17.5 18 - 19 18.2 - 18.8 18.2 - 18.8 18 - 19 19.25 - 19.75 19.5 - 20.5 19.7 - 20.3 19.7 - 20.3 19.7 - 20.3 19.75 - 20.25 21.2 - 21.8 21.2 - 21.8 23 - 25 20.5 - 22.5 20.5 - 22.5 22.5 - 24.5 20.5 - 22.5 22.5 - 24.5 Slope (dB) 0.2 - 2.2 0.2 - 2 0.2 - 2 0.5 - 1.5 0.5 - 1.5 0-2 0.5 - 1.5 0.2 - 1.6 0.2 - 2 0.4 - 1.4 0.4 - 1.4 0.4 - 1.4 0-1 0.2 - 2 0.4 - 1.4 0.4 - 1.4 0.4 - 1.4 0.2 - 1.5 0.5 - 1.5 0.5 - 1.5 1-2 1-2 1.5 - 2.5 1.5 - 2.5 0-1 0-1 FL RL IN /RL OUT CTB XMOD CSO @ Ch ± 0.3 ± 0.5 ± 0.25 ± 0.35 ± 0.4 ± 0.5 ± 0.35 ± 0.5 ± 0.5 ± 0.5 ± 0.3 ± 0.3 ± 0.6 ± 0.5 ± 0.5 ± 0.3 ± 0.3 ± 0.45 ± 0.5 ± 0.35 ± 0.5 ± 0.5 ± 0.3 ± 0.3 ± 0.3 ± 0.3 20/20 20/20 20/20 23/23 17/17 20/20 23/23 20/20 20/20 23/23 21/25 21/21 20/20 20/20 22/25 21/25 21/25 20/21 22/25 22/22 18/18 18/18 17/17 17/17 14/17 14/17 -65 -58 -58 -62 -62 -57 -61 -54 -58 -58 -56 -56 -53 -57.5 -57.5 -55 -59.5 -55 -57 -66 -66 -68 -68 -65 -65 -68 -62 -62 -63 -61 -62 -59 -62 -62 -60 -57 -61 -62 -61 -59 -64 -58 -60 -58 -58 -64 -64 -65 -65 -62 -58 -58 -63 -63 -56 -62 -56 -60 -58 -59 -54 -54 -59 -58 -59 -50 -56 -54 -68 -68 -68 -68 -65 -65 77 110 110 112 112 110 112 129 129 132 129 129 132 129 132 129 129 132 129 129 132 132 79 79 79 + 75* 79 + 75* @ Vo (dBmV) 44 44 44 44 44 44 44 59 44 44 44 44 48 44 44 44 44 44 44 44 48 48 56.9 56.9 59 59 F @ fmax 8 8.5 8.5 7 7 8.5 7 8 9 7.5 8 7.5 5.5 7.5 7.5 7.5 7.5 4 7.5 7.5 5.0 5.0 5.0 5.0 7.0 7.0 Itot (mA) 435 435 435 410 410 435 410 450 410 410 435 380 475 410 410 435 380 375 375 435 450 450 450 450 450 450 Bold = Highly recommended product Bold Red = New, highly recommended product * = digital channels 2.6.4 CATV optical receivers Frequency Type number range Forward Path Receiver BGO807 BGO807C BGO807/FC0 40 - 870 BGO807/SC0 BGO827 BGO827/SC0 Rmin (V/W) Slope (dB) FL S22 (dB) d3 d2 @fm (MHz) @Pi (mW) F @ fmax 800 800 750 750 800 750 0 -2 0 -2 0 -2 0 -2 0-2 0-2 1 1 1 1 1 1 11 11 11 11 11 11 -71 -71 -71 -71 -73 -73 -55 -54 -55 -55 -57 -57 854.5 854.4 854.5 854.5 854.5 854.5 1 1 1 1 1 1 8.5 8.5 8.5 8.5 8.5 8.5 Conn. FC SC SC Itot (mA) 205 205 205 205 205 205 Bold= Highly recommended product * NOTES: This table is for reference only. For full data please refer to the latest datasheet. For availability please check the NXP Sales office. Description Frequency range: minimum and maximum frequency in MHz at which data are characterized @Ch/@Vo. The number of channels and the output voltage at which CTB, XM, CSO and d2 are characterized @fm. Measurement frequency is F. Noise Figure is in dB or Noise in pA/Sqrt(Hz). FL is Flatness Rmin is Minimum responsivity of optical receivers. NXP Semiconductors RF Manual 10th edition 45 2.7 Fiber-optic transceiver ICs NXP Optical Networking http://www.nxp.com/opticalnetworking Why choose NXP Semiconductors’ Fiber Optic Transceivers: • Reliable supplier • Easy to design in • Robust products 2.7.1 Laser drivers Part number TZA3047A TZA3047B TZA3050 Data-rate Package type Bare die Imod/IBias Dual loop Input Vcc 30-1250 30-1250 30-1250 Mb/s SOT560-1 SOT560-1 SOT560-1 X X X [mA] 100-100 100-100 100-100 X X - CML/PECL CML/PECL CML/PECL 3.3 3.31) 3.31) Power dissipation mW 420 420 420 2.7.2 Transimpedance amplifiers Part number TZA3036 TZA3026 TZA3046 TZA3013 Data-rate Package type Bare die In Eq Sens RSSI Output Vcc 0-155 0-622 0-1250 0-2488 Mb/s die only die only die only die only X X X X [nA] 10 67 130 450 [dBm] -40 -32 -29 -24 Yes Yes Yes - 50 Ohm 50 Ohm 50 Ohm 50 Ohm 3.3 3.3 3.3 3.3 Bold= highly recommended product *) 46 NOTES: All figures given are typical at 25 deg C Power dissipation is given for Vcc = 3.3 V Eq. sensitivity conditions: Calculated from noise figure using a lowpass bandwidth filter at 0.7x bit rate and a source with an extinction ratio of 10% and a photodiode responsivity of 0.9A/W. 3.31) means that the output stage is capable of driving 5 V laser applications. NXP Semiconductors RF Manual 10th edition Power dissipation mW 50 60 70 86 Whatifyoucouldlowertotalcostof ownershipforyoursatellitesolutions? LookatTFF1004HNforsatelliteLNB,chapter5.2 NXPSemiconductorsRFManual10thedition 4 3. Design-in tools This chapter will make it easier to find and get hold of design-in information and materials, with web links or references to the NXP representative / authorized distributor. 3.1 S-Parameters 3.2 Spice models S-Parameters help you to simulate the behaviour of our devices to your specific adjustments for e.g. voltage, current. Spice models help you to create the optimal performance and to understand which external components have a certain influence on that performance. Wideband transistors, FETs & MMICs First, click on the type number, which takes you directly to the corresponding product information page on the NXP Semiconductors internet. Second, scroll down on this product information page to find the S-Parameters. Wideband transistors, FETs & Varicaps diodes First, click on the type number which takes you directly to the corresponding product information page on the NXP Semiconductors internet. Second, scroll down on this product information page to find the Spice models. BF67 BFG135 BFG198 BFG21W BFG25A/X BFG31 BFG35 BFG310/XR BFG310W/XR BFG325/XR BFG325W/XR BFG403W BFG410W BFG424F BFG424W BFG425W Wideband transistors BFG480W BFQ19 BFG505 BFQ67 BFG520 BFQ67W BFG520W BFR106 BFG540 BFR505 BFG540W BFR520 BFG541 BFR540 BFG590 BFR92A BFG591 BFR92AW BFG93A BFR93A BFG94 BFR93AW BFG97 BFS17 BFM505 BFS17A BFM520 BFS17W BFQ149 BFS25A BFQ18A BFS505 BF1211 BF1211R BF1211WR FETs BF1212 BF1212R BF1212WR BGA2001 BGA2003 BGA2711 BGA2748 BGA2771 BGA2776 BGA2709 MMICs BGA2712 BGM1011 BGM1012 BGM1013 BGM1014 BGM2011 BGA2715 48 BF511 BF513 BF862 BGA2716 BGA2717 BGA2011 BGA2012 BGA6289 BGA6489 BGA6589 NXP Semiconductors RF Manual 10th edition BFS520 BFS540 BFT25 BFT25A BFT92 BFT92W BFT93 BFT93W BRF505T PBR941 PBR951 PRF947 PRF949 PRF957 BFG10 BFG10/X BFG10W/X BFG135 BFG198 BFG21W BFG25A/X BFG25AW/X BFG31 BFG310/XR BFG310W/XR BFG325/XR BFG325W/XR BFG35 BFG403W BFG410W BFG424F BFG424W BFG425W BFG480W Wideband transistors BFG505 BFG92A/X BFG505/X BFG93A BFG505W/X BFG94 BFG520 BFG97 BFG520/X BFM505 BFG520/XR BFM520 BFG520W BFQ149 BFG520W/X BFQ18A BFG540 BFQ19 BFG540/X BFQ540 BFG540/XR BFQ67 BFG540W BFQ67W BFG540W/X BFR106 BFG540W/XR BFR505 BFG541 BFR505T BFG590 BFR520 BFG590/X BFR540 BFG591 BFR92A BFG67 BFR92AW BFG67/X BFR93A BF862 BF904 BF908 BB145B BB149 BB149A BB156 BB179 BB179B FETs BF909 Varicap diodes BB201 BB202 BB207 BFR93AW BFS17 BFS17A BFS17W BFS25A BFS505 BFS520 BFS540 BFT25A BFT92 BFT92W BFT93 BFT93W PBR941 PBR951 PRF947 PRF949 PRF957 BF998 BB208-02 3.3 Application notes http://www.nxp.com/products/all_appnotes/ For the application notes we refer you to chapter 1 of this manual. For each application, we have given the recommended application notes which are available on the internet (with interactive link) or via your local NXP representative or authorized distributor (look at the last chapter: Web Links and Contacts). 3.4 Demo boards 3.4.1 MMIC and SiGeC transistor demo boards MMIC demo boards are available (although limited) via your local NXP representative or authorized distributor (look at the last chapter:Web Links and Contacts). BFU725F BGA2001 BGA2003 BGA2011 BGA2012 BGA2031 BGA2709 BGA2711 BGA2712 BGA2714 BGA2715 BGA2716 BGA2748 BGA2771 BGA2776 BGA6289 BGA6489 BGA6589 BGM1011 BGM1012 BGM1013 BGM1014 NXP Semiconductors RF Manual 10th edition 49 3.5 Samples of products in development For development samples, please ask your local NXP representative or authorized distributor (see last chapter: Web Links and Contacts) to order the latest versions at the RF development team. 3.6 Samples of released products For all released products, samples are available in the sample warehouse. Look on the home page of the NXP web site for the link to the online sample store: www.nxp.com 3.7 Datasheets For all released products, datasheets are available on the NXP Semiconductors internet. Simply ‘clicking’ on a product type (in this manual chapter 1 or 2) takes you to the corresponding product information page on the NXP Semiconductors website. 3.8 Design-in support If you need special design-in support from our design-in engineers, please ask your local NXP representative or authorized distributor (see last chapter: Web Links and Contacts), to pass on your request to the RF development team. 50 NXP Semiconductors RF Manual 10th edition Whatifyoucouldincreaseyournetwork capacityforhigh-endservices? Lookat1-GHzCATV,chapter5.4 NXPSemiconductorsRFManual10thedition 51 4. Cross-references & replacements NXP cross-references: http://www.nxp.com/search/index.html NXP end-of-life: http://www.nxp.com/products/eol/ 4.1 Cross-references: Manufacturer types versus NXP types In alphabetical order of manufacturer type Abbreviations: BS diode Band Switch Diode CATV PD CATV Power Doubler CATV PPA CATV Push Pull Amplifier CATV PPA/HG CATV Push Pull Amplifier High Gain CATV RA CATV Reverse Amplifier FET Field Effect Transistor IS Industry Standard MMIC Monolithic Microwave Integrated Circuit Varicap Varicap Diode WB trs 1-4 Wideband Transistor 1-4 generation WB trs 5-7 Wideband Transistor 5-7 generation Manufacturer type 1SS314 1SS356 1SS381 1SS390 1SV172 1SV214 1SV214 1SV215 1SV228 1SV231 1SV232 1SV233 1SV234 1SV239 1SV241 1SV246 1SV247 1SV248 1SV249 1SV250 1SV251 1SV252 1SV254 1SV263 1SV264 1SV266 1SV267 1SV269 1SV270 1SV271 52 Manufacturer NXP type Product family Toshiba Rohm Toshiba Rohm Toshiba Toshiba Toshiba Toshiba Toshiba Toshiba Toshiba Sanyo Sanyo Toshiba Sanyo Sanyo Sanyo Sanyo Sanyo Sanyo Sanyo Toshiba Toshiba Sanyo Sanyo Sanyo Sanyo Toshiba Toshiba Toshiba BA591 BA591 BA277 BA891 BAP50-04 BB149 BB149A BB153 BB201 BB152 BB148 BAP70-03 BAP64-04 BB145B BAP64-02 BAP64-04W BAP70-02 BAP50-02 BAP50-04W BAP50-03 BAP50-04 BAP50-04W BB179 BAP50-02 BAP50-04W BAP50-03 BAP50-04 BB148 BB156 BAP50-03 BS diode BS diode BS diode BS diode PIN diode Varicap Varicap Varicap Varicap Varicap Varicap PIN diode PIN diode Varicap PIN diode PIN diode PIN diode PIN diode PIN diode PIN diode PIN diode PIN diode Varicap PIN diode PIN diode PIN diode PIN diode Varicap Varicap PIN diode NXP Semiconductors RF Manual 10th edition Manufacturer type 1SV278 1SV279 1SV282 1SV282 1SV282 1SV283 1SV283 1SV283 1SV283 1SV284 1SV288 1SV290 1SV294 1SV305 1SV307 1SV308 1T362 1T362 A 1T363 A 1T368 A 1T369 1T379 1T397 1T399 1T402 1T402 1T403 1T403 1T404A 1T405 A Manufacturer NXP type Product family Toshiba Toshiba Toshiba Toshiba Toshiba Toshiba Toshiba Toshiba Toshiba Toshiba Toshiba Toshiba Sanyo Toshiba Toshiba Toshiba Sony Sony Sony Sony Sony Sony Sony Sony Sony Sony Sony Sony Sony Sony BB179 BB179 BB178 BB178 BB187 BB187 BB178 BB178 BB187 BB156 BB152 BB182 BAP70-03 BB202 BAP51-03 BAP51-02 BB149 BB149A BB153 BB148 BB152 BB131 BB152 BB148 BB179B BB179B BB178 BB178 BB187 BB187 Varicap Varicap Varicap Varicap Varicap Varicap Varicap Varicap Varicap Varicap Varicap Varicap PIN diode Varicap PIN diode PIN diode Varicap Varicap Varicap Varicap Varicap Varicap Varicap Varicap Varicap Varicap Varicap Varicap Varicap Varicap Manufacturer type 1T406 1T408 2N3330 2N3331 2N4220 2N4856 2N4857 2N4858 2N5114 2N5115 2N5116 2N5432 2N5433 2N5434 2N5457 2N5458 2N5459 2N5653 2N5654 2SC4094 2SC4095 2SC4182 2SC4184 2SC4185 2SC4186 2SC4226 2SC4227 2SC4228 2SC4247 2SC4248 2SC4315 2SC4320 2SC4321 2SC4325 2SC4394 2SC4536 2SC4537 2SC4592 2SC4593 2SC4703 2SC4784 2SC4807 2SC4842 2SC4899 2SC4900 2SC4901 2SC4988 2SC5011 2SC5012 2SC5065 2SC5085 2SC5087 2SC5088 2SC5090 2SC5092 2SC5095 2SC5107 2SC5463 2SC5593 2SC5594 2SC5623 2SC5624 2SC5631 2SJ105GR 2SK163-K 2SK163-L 2SK163-M 2SK163-N 2SK210BL 2SK370BL 2SK370GR 2SK370V 2SK381 2SK43 Manufacturer NXP type Product family Sony Sony IS IS IS IS IS IS IS IS IS IS IS IS IS IS IS IS IS NEC NEC NEC NEC NEC NEC NEC NEC NEC Toshiba Toshiba Toshiba Toshiba Toshiba Toshiba Toshiba NEC Renesas Renesas Renesas NEC Renesas Renesas Toshiba Renesas Renesas Renesas Renesas NEC NEC Toshiba Toshiba Toshiba Toshiba Toshiba Toshiba Toshiba Toshiba Toshiba Renesas Renesas Renesas Renesas Renesas IS Renesas Renesas Renesas Renesas Renesas Renesas Renesas Renesas Renesas Renesas BB182 BB187 J176 J176 BF245A BSR56 BSR57 BSR58 J174 J175 J175 J108 J108 J109 BF245A BF245A BF245B J112 J111 BFG520/XR BFG520/XR BFS17W BFS17W BFS17W BFR92AW PRF957 BFQ67W BFS505 BFR92AW BFR92AW BFG520/XR BFG520/XR BFQ67W BFS505 PRF957 BFQ19 BFR93AW BFG520/XR BFS520 BFQ19 BFS505 BFQ18A BFG540W/XR BFS505 BFG520/XR BFS520 BFQ540 BFG540W/XR BFG540W/XR PRF957 PRF957 BFG520/XR BFG540W/XR BFS520 BFG520/XR BFS505 BFS505 BFQ67W BFG410W BFG425W BFG410W BFG425W BFQ540 J177 J113 J113 J113 J113 PMBFJ309 J109 J109 J109 J113 J113 Varicap Varicap FET FET FET FET FET FET FET FET FET FET FET FET FET FET FET FET FET WB trs 1-4 WB trs 1-4 WB trs 1-4 WB trs 1-4 WB trs 1-4 WB trs 1-4 WB trs 1-4 WB trs 1-4 WB trs 1-4 WB trs 1-4 WB trs 1-4 WB trs 1-4 WB trs 1-4 WB trs 1-4 WB trs 1-4 WB trs 1-4 WB trs 1-4 WB trs 1-4 WB trs 1-4 WB trs 1-4 WB trs 1-4 WB trs 1-4 WB trs 1-4 WB trs 1-4 WB trs 1-4 WB trs 1-4 WB trs 1-4 WB trs 1-4 WB trs 1-4 WB trs 1-4 WB trs 1-4 WB trs 1-4 WB trs 1-4 WB trs 1-4 WB trs 1-4 WB trs 1-4 WB trs 1-4 WB trs 1-4 WB trs 1-4 WB trs 5-7 WB trs 5-7 WB trs 5-7 WB trs 5-7 WB trs 1-4 FET FET FET FET FET FET FET FET FET FET FET Manufacturer type 2SK435 2SK508 3SK290 BA592 BA592 BA595 BA597 BA885 BA892 BA892 BA895 BAR14-1 BAR15-1 BAR16-1 BAR17 BAR60 BAR61 BAR63 BAR63-02L BAR63-02V BAR63-02W BAR63-03W BAR63-05 BAR63-05W BAR64-02V BAR64-02W BAR64-03W BAR64-04 BAR64-04W BAR64-05 BAR64-05W BAR64-06 BAR64-06W BAR65-02V BAR65-02W BAR65-03W BAR66 BAR67-02W BAR67-03W BB304C BB304M BB305C BB305M BB403M BB501C BB501M BB502C BB502M BB503C BB503M BB535 BB545 BB555 BB555 BB565 BB601M BB639 BB639 BB640 BB641 BB659 BB659 BB664 BB664 BB664 BB669 BB814 BB831 BB833 BB835 BBY58-02V BBY65 BF1005S BF1009S Manufacturer NXP type Product family Renesas Renesas Renesas Infineon Infineon Infineon Infineon Infineon Infineon Infineon Infineon Infineon Infineon Infineon Infineon Infineon Infineon Infineon Infineon Infineon Infineon Infineon Infineon Infineon Infineon Infineon Infineon Infineon Infineon Infineon Infineon Infineon Infineon Infineon Infineon Infineon Infineon Infineon Infineon Renesas Renesas Renesas Renesas Renesas Renesas Renesas Renesas Renesas Renesas Renesas Infineon Infineon Infineon Infineon Infineon Renesas Infineon Infineon Infineon Infineon Infineon Infineon Infineon Infineon Infineon Infineon Infineon Infineon Infineon Infineon Infineon Infineon Infineon Infineon J113 PMBFJ308 BF998WR BA591 BA591 BAP70-03 BAP70-03 BAP70-03 BA891 BA891 BAP70-02 BAP70-03 BAP70-03 BAP70-03 BAP50-03 BAP50-03 BAP50-03 BAP63-03 BAP63-02 BAP63-02 BAP63-02 BAP63-03 BAP63-05W BAP63-05W BAP64-02 BAP64-02 BAP64-03 BAP64-04 BAP64-04W BAP64-05 BAP64-05W BAP64-06 BAP64-06W BAP65-02 BAP65-02 BAP65-03 BAP1321-04 BAP1321-02 BAP1321-03 BF1201WR BF1201R BF1201WR BF1201R BF909R BF1202WR BF1202R BF1202WR BF1202R BF1202WR BF1202R BB149 BB149A BB179B BB179B BB179 BF1202 BB148 BB153 BB152 BB152 BB178 BB178 BB187 BB178 BB178 BB152 BB201 BB131 BB131 BB131 BB202 BB202 BF1105 BF1109 FET FET FET BS diode BS diode PIN diode PIN diode PIN diode BS diode BS diode PIN diode PIN diode PIN diode PIN diode PIN diode PIN diode PIN diode PIN diode PIN diode PIN diode PIN diode PIN diode PIN diode PIN diode PIN diode PIN diode PIN diode PIN diode PIN diode PIN diode PIN diode PIN diode PIN diode PIN diode PIN diode PIN diode PIN diode PIN diode PIN diode FET FET FET FET FET FET FET FET FET FET FET Varicap Varicap Varicap Varicap Varicap FET Varicap Varicap Varicap Varicap Varicap Varicap Varicap Varicap Varicap Varicap Varicap Varicap Varicap Varicap Varicap Varicap FET FET NXP Semiconductors RF Manual 10th edition 53 Manufacturer type BF1009SW BF2030 BF2030R BF2030W BF244A BF244B BF244C BF247A BF247B BF247C BF256A BF256B BF256C BF770A BF771 BF771W BF772 BF775 BF775A BF775W BF851A BF851B BF851C BF994S BF996S BF998 BF998 BF998R BF998RW BF998W BFG135A BFG193 BFG194 BFG196 BFG19S BFG235 BFP180 BFP181 BFP182 BFP183 BFP183R BFP193 BFP193W BFP196W BFP280 BFP405 BFP420 BFP450 BFP81 BFP93A BFQ193 BFQ19S BFR106 BFR180 BFR180W BFR181 BFR181W BFR182 BFR182W BFR183 BFR183W BFR193 BFR193W BFR35AP BFR92AL BFR92P BFR92W BFR93A BFR93AL BFR93AW BFS17L BFS17P BFS17W BFS481 54 Manufacturer NXP type Product family Infineon Infineon Infineon Infineon IS IS IS IS IS IS IS IS IS Infineon Infineon Infineon Infineon Infineon Infineon Infineon IS IS IS Vishay Vishay Vishay Infineon Vishay Vishay Infineon Infineon Infineon Infineon Infineon Infineon Infineon Infineon Infineon Infineon Infineon Infineon Infineon Infineon Infineon Infineon Infineon Infineon Infineon Infineon Infineon Infineon Infineon Infineon Infineon Infineon Infineon Infineon Infineon Infineon Infineon Infineon Infineon Infineon Infineon Motorola Infineon Infineon Infineon Motorola Infineon Motorola Infineon Infineon Infineon BF1109WR BF1101 BF1101R BF1101WR BF245A BF245B BF245C J108 J108 J108 BF245A BF245B BF245C BFR93A PBR951 BFS540 BFG540 BFR92A BFR92A BFR92AW BF861A BF861B BF861C BF994S BF996S BF998 BF998 BF998R BF998WR BF998WR BFG135 BFG198 BFG31 BFG541 BFG97 BFG135 BFG505/X BFG67/X BFG67/X BFG520/X BFG520/XR BFG540/X BFG540W/XR BFG540W/XR BFG505/X BFG410W BFG425W BFG480W BFG92A/X BFG93A/X BFQ540 BFQ19 BFR106 BFR505 BFS505 BFR520 BFS520 PBR941 PRF947 PBR951 PRF957 PBR951 PRF957 BFR92A BFR92A BFR92A BFR92AW BFR93A BFR93A BFR93AW BFS17 BFS17A BFS17W BFM505 FET FET FET FET FET FET FET FET FET FET FET FET FET WB trs 1-4 WB trs 1-4 WB trs 1-4 WB trs 1-4 WB trs 1-4 WB trs 1-4 WB trs 1-4 FET FET FET FET FET FET FET FET FET FET WB trs 1-4 WB trs 1-4 WB trs 1-4 WB trs 1-4 WB trs 1-4 WB trs 1-4 WB trs 1-4 WB trs 1-4 WB trs 1-4 WB trs 1-4 WB trs 1-4 WB trs 1-4 WB trs 1-4 WB trs 1-4 WB trs 1-4 WB trs 5-7 WB trs 5-7 WB trs 5-7 WB trs 1-4 WB trs 1-4 WB trs 1-4 WB trs 1-4 WB trs 1-4 WB trs 1-4 WB trs 1-4 WB trs 1-4 WB trs 1-4 WB trs 1-4 WB trs 1-4 WB trs 1-4 WB trs 1-4 WB trs 1-4 WB trs 1-4 WB trs 1-4 WB trs 1-4 WB trs 1-4 WB trs 1-4 WB trs 1-4 WB trs 1-4 WB trs 1-4 WB trs 1-4 WB trs 1-4 WB trs 1-4 WB trs 1-4 NXP Semiconductors RF Manual 10th edition Manufacturer type BFS483 BFT92 BFT93 BIC701C BIC701M BIC702C BIC702M BIC801M BSR111 BSR112 BSR113 BSR174 BSR175 BSR176 BSR177 CA901 CA901A CA922 CA922A CMY91 D5540185 D7540185 D7540200 D8640185 D8640250GT D8640250GTH D8740180GT D8740200GT FSD273TA FSD273TA FSD273TA HBFP0405 HBFP0420 HBFP0450 HSC277 HSMP3800 HSMP3802 HSMP3804 HSMP3810 HSMP3814 HSMP381B HSMP381C HSMP381F HSMP3820 HSMP3822 HSMP3830 HSMP3832 HSMP3833 HSMP3834 HSMP3860 HSMP3862 HSMP3864 HSMP386B HSMP386E HSMP386L HSMP3880 HSMP3890 HSMP3892 HSMP3894 HSMP3895 HSMP389B HSMP389C HSMP389F HVB14S HVC131 HVC132 HVC200A HVC200A HVC202A HVC202B HVC300A HVC300B HVC306A HVC306B Manufacturer NXP type Product family Infineon Infineon Infineon Renesas Renesas Renesas Renesas Renesas IS IS IS IS IS IS IS IS IS IS IS Infineon IS IS IS IS IS IS IS IS Skyworks Skyworks Skyworks Agilent Agilent Agilent Renesas Agilent Agilent Agilent Agilent Agilent Agilent Agilent Agilent Agilent Agilent Agilent Agilent Agilent Agilent Agilent Agilent Agilent Agilent Agilent Agilent Agilent Agilent Agilent Agilent Agilent Agilent Agilent Agilent Renesas Renesas Renesas Renesas Renesas Renesas Renesas Renesas Renesas Renesas Renesas BFM520 BFT92 BFT93 BF1105WR BF1105R BF1105WR BF1105R BF1105 PMBFJ111 PMBFJ112 PMBFJ113 PMBFJ174 PMBFJ175 PMBFJ176 PMBFJ177 BGX885N BGX885N BGD885 BGD885 BGA2022 BGD502 BGD702 BGD704 BGD802 CGD914 CGD923 CGD923 CGD923 BB148 BB178 BB178 BFG410W BFG425W BFG480W BA277 BAP70-03 BAP50-04 BAP50-05 BAP50-03 BAP50-05 BAP50-03 BAP50-05 BAP64-05W BAP1321-03 BAP1321-04 BAP64-03 BAP64-04 BAP64-06 BAP64-05 BAP50-03 BAP50-04 BAP50-05 BAP50-02 BAP50-04W BAP50-05W BAP51-03 BAP51-03 BAP64-04 BAP64-05 BAP51-02 BAP51-02 BAP64-04 BAP51-05W BAP50-04W BAP65-02 BAP51-02 BB178 BB187 BB179 BB179B BB182 BB182 BB187 BB187 WB trs 1-4 WB trs 1-4 WB trs 1-4 FET FET FET FET FET FET FET FET FET FET FET FET CATV PPA CATV PPA CATV PD CATV PD MMIC CATV PD CATV PD CATV PD CATV PD CATV PD CATV PD CATV PD CATV PD Varicap Varicap Varicap WB trs 5-7 WB trs 5-7 WB trs 5-7 BS diode PIN diode PIN diode PIN diode PIN diode PIN diode PIN diode PIN diode PIN diode PIN diode PIN diode PIN diode PIN diode PIN diode PIN diode PIN diode PIN diode PIN diode PIN diode PIN diode PIN diode PIN diode PIN diode PIN diode PIN diode PIN diode PIN diode PIN diode PIN diode PIN diode PIN diode PIN diode Varicap Varicap Varicap Varicap Varicap Varicap Varicap Varicap Manufacturer type HVC355B HVC359 HVC363A HVC363A HVC376B HVC376B HVD132 HVU131 HVU132 HVU202(A) HVU202(A) HVU300A HVU307 HVU315 HVU316 HVU363A HVU363A HVU363B INA-51063 J270 J308 J309 J310 JDP2S01E JDP2S01U JDP2S02T JDP2S04E KV1835E MA2S077 MA2S357 MA2S357 MA2S357 MA2S372 MA2S374 MA2SV01 MA357 MA366 MA368 MA372 MA372 MA4CP101A MA4P274-1141 MA4P275-1141 MA4P275CK-287 MA4P277-1141 MA4P278-287 MA4P789-1141 MA4P789ST-287 MC7712 MC7716 MC7722 MC7726 MC7833 MC7852 MC7862 MC7866 MHW1224 MHW1244 MHW1253LA MHW1254L MHW1254LA MHW1304L MHW1304LA MHW1304LAN MHW1346 MHW1353LA MHW1354LA MHW5182A MHW5185B MHW5222A MHW5272A MHW5342A MHW5342T MHW6182 Manufacturer NXP type Product family Renesas Renesas Renesas Renesas Renesas Renesas Renesas Renesas Renesas Renesas Renesas Renesas Renesas Renesas Renesas Renesas Renesas Renesas Agilent IS IS IS IS Toshiba Toshiba Toshiba Toshiba Toko IS Matsushita Matsushita Matsushita Matsushita Matsushita Renesas Matsushita Matsushita Matsushita Matsushita Matsushita Matsushita Matsushita Matsushita Matsushita Matsushita Matsushita Matsushita Matsushita IS IS IS IS IS IS IS IS Motorola/Freescale Motorola/Freescale Motorola/Freescale Motorola/Freescale Motorola/Freescale Motorola/Freescale Motorola/Freescale Motorola/Freescale Motorola/Freescale Motorola/Freescale Motorola/Freescale Motorola/Freescale Motorola/Freescale Motorola/Freescale Motorola/Freescale Motorola/Freescale Motorola/Freescale Motorola/Freescale BB145B BB202 BB178 BB178 BB198 BB202 BAP51-02 BAP65-03 BAP51-03 BB149 BB149A BB152 BB148 BB148 BB131 BB148 BB153 BB148 BGA2001 J177 J108 J109 J110 BAP65-02 BAP65-03 BAP63-02 BAP50-02 BB199 BA277 BB187 BB178 BB178 BB179 BB182 BB202 BB153 BB148 BB131 BB149 BB149A BAP65-03 BAP51-03 BAP65-03 BAP65-05 BAP70-03 BAP70-03 BAP1321-03 BAP1321-04 BGY785A BGY787 BGY785A BGY787 CGY887A BGY885A CGD923 BGD816L BGY67 BGY67A BGY67A BGY68 BGY68 BGY68 BGY68 BGY68 BGY67A BGY67A BGY68 BGY585A BGD502 BGY587 BGY587B BGY588N BGY588N BGY585A Varicap Varicap Varicap Varicap Varicap Varicap PIN diode PIN diode PIN diode Varicap Varicap Varicap Varicap Varicap Varicap Varicap Varicap Varicap MMIC FET FET FET FET PIN diode PIN diode PIN diode PIN diode Varicap BS diode Varicap Varicap Varicap Varicap Varicap Varicap Varicap Varicap Varicap Varicap Varicap PIN diode PIN diode PIN diode PIN diode PIN diode PIN diode PIN diode PIN diode CATV PPA CATV PPA CATV PPA CATV PPA CATV PPA/HG CATV PPA CATV PD CATV PD CATV RA CATV RA CATV RA CATV RA CATV RA CATV RA CATV RA CATV RA CATV RA CATV RA CATV RA CATV PPA CATV PD CATV PPA CATV PPA/HG CATV PPA/HG CATV PPA/HG CATV PPA Manufacturer type MHW6182-6 MHW6182T MHW6185B MHW6185T MHW6205 MHW6222 MHW6222B MHW6222T MHW6272 MHW6272T MHW6342 MHW6342T MHW7182B MHW7182C MHW7185C MHW7185C MHW7185CL MHW7205C MHW7205CL MHW7205CLN MHW7222 MHW7222A MHW7222B MHW7222B MHW7242A MHW7272A MHW7292 MHW7292A MHW7292AN MHW7342 MHW8142 MHW8182B MHW8182C MHW8185 MHW8185L MHW8188A MHW8205 MHW8205L MHW8207A MHW8227A MHW8242A MHW8247A MHW8272A MHW8292 MHW8342 MHW9146 MHW9186 MHW9186A MHW9182B MHW9182C MHW9187 MHW9188 MHW9188A MHW9189 MHW9189A MHW9207A MHW9227A MHW9236 MHW9242A MHW9247 MHW9247A MHW9276 MHWJ5272A MHWJ7185A MHWJ7205A MHWJ7292 MHWJ9182 MMG2001NT1 MMG2001T1 MMBF4391 MMBF4392 MMBF4393 MMBF4860 MMBF5484 Manufacturer NXP type Product family Motorola/Freescale Motorola/Freescale Motorola/Freescale Motorola/Freescale Motorola/Freescale Motorola/Freescale Motorola/Freescale Motorola/Freescale Motorola/Freescale Motorola/Freescale Motorola/Freescale Motorola/Freescale Motorola/Freescale Motorola/Freescale Motorola/Freescale Motorola/Freescale Motorola/Freescale Motorola/Freescale Motorola/Freescale Motorola/Freescale Motorola/Freescale Motorola/Freescale Motorola/Freescale Motorola/Freescale Motorola/Freescale Motorola/Freescale Motorola/Freescale Motorola/Freescale Motorola/Freescale Motorola/Freescale Motorola/Freescale Motorola/Freescale Motorola/Freescale Motorola/Freescale Motorola/Freescale Motorola/Freescale Motorola/Freescale Motorola/Freescale Motorola/Freescale Motorola/Freescale Motorola/Freescale Motorola/Freescale Motorola/Freescale Motorola/Freescale Motorola/Freescale Motorola/Freescale Motorola/Freescale Motorola/Freescale Motorola/Freescale Motorola/Freescale Motorola/Freescale Motorola/Freescale Motorola/Freescale Motorola/Freescale Motorola/Freescale Motorola/Freescale Motorola/Freescale Motorola/Freescale Motorola/Freescale Motorola/Freescale Motorola/Freescale Motorola/Freescale Motorola/Freescale Motorola/Freescale Motorola/Freescale Motorola/Freescale Motorola/Freescale Motorola/Freescale Motorola/Freescale Motorola Motorola Motorola Motorola Motorola BGY685A BGY585A BGD502 BGD502 BGD704 BGY587 BGY687 BGY587 BGY587B BGY587B BGY588N BGY588N BGY785A BGY785A BGY785A BGD712 BGD712 BGD714 BGD714 BGD714 BGY787 BGY787 BGY787 BGY787 BGE787B BGE787B BGE787B BGE787B BGE787B BGE788 BGY883 BGY885A BGY885A BGD902 BGD902L BGD906 BGD904 BGD904L BGD906 CGD942C CGY887A CGD944C CGY887B BGY887B BGY888 BGY883 BGY885A BGY885A BGY1085A BGY1085A CGD923 CGD923 BGD904 BGD904 BGD904 BGD906 BGD906 CGY887A CGD1042 CGD944C CGD944C CGY887B BGY587B BGD712 BGD714 BGE787B BGY1085A BGD816L BGD816L PMBF4391 PMBF4392 PMBF4393 PMBFJ112 BFR31 CATV PPA CATV PPA CATV PD CATV PD CATV PD CATV PPA CATV PPA CATV PPA CATV PPA CATV PPA CATV PPA CATV PPA CATV PPA CATV PPA CATV PPA CATV PD CATV PD CATV PD CATV PD CATV PD CATV PPA CATV PPA CATV PPA CATV PPA CATV PPA/HG CATV PPA/HG CATV PPA/HG CATV PPA/HG CATV PPA/HG CATV PPA/HG CATV PPA CATV PPA CATV PPA CATV PD CATV PD CATV PD CATV PD CATV PD CATV PD CATV PD CATV PPA CATV PPA CATV PPA CATV PPA CATV PPA CATV PPA CATV PPA CATV PPA CATV PPA CATV PPA CATV PD CATV PD CATV PD CATV PD CATV PD CATV PD CATV PD CATV PPA/HG CATV PD CATV PD CATV PD CATV PPA/HG CATV PPA CATV PD CATV PD CATV PPA/HG CATV PPA CATV PD CATV PD FET FET FET FET FET NXP Semiconductors RF Manual 10th edition 55 Manufacturer type MMBFJ113 MMBFJ174 MMBFJ175 MMBFJ176 MMBFJ177 MMBFJ308 MMBFJ309 MMBFJ310 MMBFU310 MMBR5031L MMBR5179L MMBR571L MMBR901L MMBR911L MMBR920L MMBR931L MMBR941BL MMBR941L MMBR951AL MMBR951L MMBV105GLT1 MMBV109LT1 MPF102 MPF970 MPF971 MRF577 MRF5811L MRF917 MRF927 MRF9411L MRF947 MRF947A MRF9511L MRF957 MT4S34U PRF947B PZFJ108 PZFJ109 PZFJ110 R0605250L R0605300L R2005240 RN142G RN142S RN731V RN739D RN739F S505T S505TR S505TRW S5540220 S595T S595TR S595TRW S7540185 S7540215 S8740190 S8740220 S8740230 S949T S949TR S949TRW S974T S974TR S974TRW SMP1302-004 SMP1302-005 SMP1302-011 SMP1302-074 SMP1302-075 SMP1302-079 SMP1304-001 SMP1304-011 SMP1307-001 56 Manufacturer NXP type Product family Motorola Motorola Motorola Motorola Motorola Motorola Motorola Motorola Motorola Motorola Motorola Motorola Motorola Motorola Motorola Motorola Motorola Motorola Motorola Motorola ON Semicond. ON Semicond. IS IS IS Motorola Motorola Motorola Motorola Motorola Motorola Motorola Motorola Motorola Toshiba Motorola IS IS IS IS IS IS Rohm Rohm Rohm Rohm Rohm Vishay Vishay Vishay IS Vishay Vishay Vishay IS IS IS IS IS Vishay Vishay Vishay Vishay Vishay Vishay Skyworks Skyworks Skyworks Skyworks Skyworks Skyworks Skyworks Skyworks Skyworks PMBFJ113 PMBFJ174 PMBFJ175 PMBFJ176 PMBFJ177 PMBFJ308 PMBFJ309 PMBFJ310 PMBFJ310 BFS17 BFS17A PBR951 BFR92A BFR93A BFR93A BFT25A PBR941 PBR941 PBR951 PBR951 BB156 BB148 BF245A J174 J176 PRF957 BFG93A/X BFQ67W BFS25A BFG520/X BFS520 PRF947 BFG540/X PRF957 BFG410W PRF947 J108 J109 J110 BGY66B BGY68 BGY67A BAP1321-03 BAP1321-02 BAP50-03 BAP50-04 BAP50-04W BF1101 BF1101R BF1101WR BGY587 BF1105 BF1105R BF1105WR BGY785A BGY787 BGD812 BGD814 BGD816L BF1109 BF1109R BF1109WR BF1109 BF1109R BF1109WR BAP50-05 BAP50-04 BAP50-03 BAP50-05W BAP50-04W BAP50-02 BAP70-03 BAP70-03 BAP70-03 FET FET FET FET FET FET FET FET FET WB trs 1-4 WB trs 1-4 WB trs 1-4 WB trs 1-4 WB trs 1-4 WB trs 1-4 WB trs 1-4 WB trs 1-4 WB trs 1-4 WB trs 1-4 WB trs 1-4 Varicap Varicap FET FET FET WB trs 1-4 WB trs 1-4 WB trs 1-4 WB trs 1-4 WB trs 1-4 WB trs 1-4 WB trs 1-4 WB trs 1-4 WB trs 1-4 WB trs 5-7 WB trs 1-4 FET FET FET CATV RA CATV RA CATV RA PIN diode PIN diode PIN diode PIN diode PIN diode FET FET FET CATV PPA FET FET FET CATV PPA CATV PPA CATV PD CATV PD CATV PD FET FET FET FET FET FET PIN diode PIN diode PIN diode PIN diode PIN diode PIN diode PIN diode PIN diode PIN diode NXP Semiconductors RF Manual 10th edition Manufacturer type SMP1307-011 SMP1320-004 SMP1320-011 SMP1320-074 SMP1321-001 SMP1321-005 SMP1321-011 SMP1321-075 SMP1321-079 SMP1322-004 SMP1322-011 SMP1322-074 SMP1322-079 SMP1340-011 SMP1340-079 SMP1352-011 SMP1352-079 SMV1235-004 SMV1236-004 SST111 SST112 SST113 SST174 SST175 SST176 SST177 SST201 SST202 SST203 SST308 SST309 SST310 SST4391 SST4392 SST4393 SST4856 SST4857 SST4859 SST4860 SST4861 SVC201SPA TMPF4091 TMPF4092 TMPF4093 TMPF4391 TMPF4392 TMPF4393 TMPFB246A TMPFB246B TMPFB246C TMPFJ111 TMPFJ112 TMPFJ113 TMPFJ174 TMPFJ175 TMPFJ176 TMPFJ177 TSDF54040 uPC2709 uPC2711 uPC2712 uPC2745 uPC2746 uPC2748 uPC2771 uPC8112 Manufacturer NXP type Product family Skyworks Skyworks Skyworks Skyworks Skyworks Skyworks Skyworks Skyworks Skyworks Skyworks Skyworks Skyworks Skyworks Skyworks Skyworks Skyworks Skyworks Skyworks Skyworks IS IS IS IS IS IS IS IS IS IS IS IS IS IS IS IS IS IS IS IS IS Sanyo IS IS IS IS IS IS IS IS IS IS IS IS IS IS IS IS Vishay NEC NEC NEC NEC NEC NEC NEC NEC BAP70-03 BAP65-05 BAP65-03 BAP65-05W BAP1321-03 BAP1321-04 BAP1321-03 BAP1321-04 BAP1321-02 BAP65-05 BAP65-03 BAP65-05W BAP65-02 BAP63-03 BAP63-02 BAP64-03 BAP64-02 BB181 BB156 PMBFJ111 PMBFJ112 PMBFJ113 PMBFJ174 PMBFJ175 PMBFJ176 PMBFJ177 BFT46 BFR31 BFR30 PMBFJ308 PMBFJ309 PMBFJ310 PMBF4391 PMBF4392 PMBF4393 BSR56 BSR57 BSR56 BSR57 BSR58 BB187 PMBF4391 PMBF4392 PMBF4393 PMBF4391 PMBF4392 PMBF4393 BSR56 BSR57 BSR58 PMBFJ111 PMBFJ112 PMBFJ113 PMBFJ174 PMBFJ175 PMBFJ176 PMBFJ177 BF1102 BGA2709 BGA2711 BGA2712 BGA2001 BGA2001 BGA2748 BGA2771 BGA2022 PIN diode PIN diode PIN diode PIN diode PIN diode PIN diode PIN diode PIN diode PIN diode PIN diode PIN diode PIN diode PIN diode PIN diode PIN diode PIN diode PIN diode Varicap Varicap FET FET FET FET FET FET FET FET FET FET FET FET FET FET FET FET FET FET FET FET FET Varicap FET FET FET FET FET FET FET FET FET FET FET FET FET FET FET FET FET MMIC MMIC MMIC MMIC MMIC MMIC MMIC MMIC 4.2 Cross-references: NXP discontinued types versus NXP replacement types In alphabetical order of manufacturer type Abbreviations: BS diode Band Switch Diode CATV Community Antenna Television System FET Field Effect Transistor Varicap Varicap Diode WB trs Wideband Transistor OM Optical Module NXP discontinued type BA277-01 BAP142L BAP51-01 BAP51L BAP55L BB145 BB145B-01 BB151 BB157 BB178L BB179BL BB179L BB181L BB182B BB182B BB182L BB187L BB190 BB202L BB804 BBY42 BF1203 BF689K BF763 BF851A BF851A BF851B BF851B BF851C BF851C BF992/01 BFC505 BFC520 BFET505 BFET520 BFG17A BFG197 BFG197/X BFG25AW/XR BFG410W/CA BFG425W/CA BFG425W/CA BFG505/XR BFG505W/XR BFG520W/XR BFG590/XR BFG590W BFG590W/XR BFG67/XR BFG92A BFG92A/XR BFG93A/XR BFQ34/01 BFR92 BFR92AR BFR92AT Product family BS diode PIN diode PIN diode PIN diode PIN diode Varicap Varicap varicap varicap Varicap Varicap Varicap Varicap Varicap Varicap Varicap Varicap Varicap Varicap Varicap Varicap FET WB trs WB trs FET FET FET FET FET FET FET WB trs WB trs WB trs WB trs WB trs WB trs WB trs WB trs WB trs WB trs WB trs WB trs WB trs WB trs WB trs WB trs WB trs WB trs WB trs WB trs WB trs WB trs WB trs WB trs WB trs NXP replacement type BA277 BAP142LX BAP51LX BAP51LX BAP55LX BB145B BB145B BB135 BB187 BB178LX BB179BLX BB179LX BB181LX BB182 BB182 BB182LX BB187LX BB149 BB202LX BB207 BBY40 BF1203 BFS17 BFS17 BF861A BF861A BF851B BF851B BF861C BF861C BF992 BFM505 BFM520 BFM505 BFM520 BFS17A BFG198 BFG198 BFG25AW/X BFG410W BGF425W BGF425W BFG505/X BFG505W/X BFG520W/X BFG590/X BFG590W/X BFG590W/X BFG67 BFG92A/X BFG92A/X BFG93A/X BFG35 BFR92A BFR92A BFR92AW NXP discontinued type BFR93 BFR93AT BFR93R BFU510 BFU540 BGA2031 BGD102/02 BGD102/04 BGD104 BGD104/04 BGD502/01 BGD502/01 BGD502/01 BGD502/01 BGD502/03 BGD502/03 BGD502/05 BGD502/07 BGD502/6M BGD502/C7 BGD502/R BGD504 BGD504/01 BGD504/02 BGD504/09 BGD602 BGD602/02 BGD602/07 BGD602/09 BGD602/14 BGD602D BGD702D BGD702D/08 BGD704/01 BGD704/07S BGD704/S9 BGD704N BGD802/09 BGD802N BGD802N BGD802N/07 BGD802N/07 BGD804N BGD804N BGD804N/02 BGD804N/02 BGD902/07 BGD904/02 BGD904/07 BGD906/02 BGE847BO BGE847BO BGE847BO BGE847BO/FC BGE847BO/FC0 BGE847BO/FC0 Product family WB trs WB trs WB trs WB trs WB trs WB trs CATV CATV CATV CATV CATV CATV CATV CATV CATV CATV CATV CATV CATV CATV CATV CATV CATV CATV CATV CATV CATV CATV CATV CATV CATV CATV CATV CATV CATV CATV CATV CATV CATV CATV CATV CATV CATV CATV CATV CATV CATV CATV CATV CATV CATV CATV CATV CATV CATV CATV NXP replacement type BFR92A BFR93AW BFR93A BFU725F BFU725F BGA2031/1 BGD502 BGD502 BGD704 BGD704 BGD502 BGD502 BGD502 BGD502 BGD502 BGD502 BGD502 BGD502 BGD702 BGD502 BGD502 BGD704 BGD704 BGD704 BGD704 BGD702 BGD702 BGD702 BGD702 BGD702 BGD712 BGD712 BGD712 BGD704 BGD704 BGD704 BGD714 BGD802 BGD812 BGD812 BGD812 BGD812 BGD814 BGD814 BGD814 BGD814 BGD902 BGD904 BGD904 BGD906 BGO827 BGO827 BGO827 BGO827/SC0 BGO827/SC0 BGO827/SC0 NXP Semiconductors RF Manual 10th edition 57 NXP discontinued type BGE847BO/FC1 BGE847BO/SC BGE847BO/SC0 BGE847BO/SC0 BGE887BO BGE887BO/FC BGE887BO/FC1 BGE887BO/SC BGO847/01 BGO847/01 BGO847/FC0 BGO847/FC0 BGO847/FC01 BGO847/FC01 BGO847/SC0 BGQ34/01 BGU2003 BGX885/02 BGY1085A/07 BGY584A BGY585A/01 BGY586 BGY586/05 BGY587/01 BGY587/01 BGY587/02 BGY587/02 BGY587/07 BGY587/09 BGY587B/01 BGY587B/02 BGY587B/09 BGY588 BGY588/04 BGY66B/04 BGY67/04 BGY67/09 BGY67/14 BGY67/19 BGY67A/04 BGY67A/14 BGY68/01 BGY685A/07 BGY685AD BGY685AD BGY685AL BGY687/07 BGY687/14 BGY687B BGY687B/02 BGY785A/07 BGY785A/09 BGY785AD BGY785AD/06 BGY785AD/8M BGY785AD/8M 58 Product family CATV CATV CATV CATV CATV CATV CATV CATV CATV CATV CATV CATV CATV CATV CATV WB WB trs CATV CATV CATV CATV CATV CATV CATV CATV CATV CATV CATV CATV CATV CATV CATV CATV CATV CATV CATV CATV CATV CATV CATV CATV CATV CATV CATV CATV CATV CATV CATV CATV CATV CATV CATV CATV CATV CATV CATV NXP Semiconductors RF Manual 10th edition NXP replacement type BGO827/SC0 BGO827/SC0 BGO827/SC0 BGO827/SC0 BGO827 BGO827/SC0 BGO827/SC0 BGO827/SC0 BGO847 BGO847 BGO827/SC0 BGO827/SC0 BGO827/SC0 BGO827/SC0 BGO827/SC0 BFG35 BGA2003 BGX885N BGY1085A BGY585A BGY585A BGY587 BGY587 BGY587 BGY587 BGY587 BGY587 BGY587 BGY587 BGY587B BGY587B BGY587B BGY588N BGY588N BGY66B BGY67 BGY67 BGY67 BGY67 BGY67A BGY67A BGY68 BGY685A BGY785A BGY785A BGY785A BGY687 BGY687 BGE787B BGE787B BGY785A BGY785A BGY785A BGY785A BGY885A BGY885A NXP discontinued type BGY787/02 BGY787/07 BGY787/09 BGY847BO BGY847BO/SC BGY84A BGY84A/04 BGY84A/05 BGY85 BGY85A BGY85A/04 BGY85A/05 BGY85H/01 BGY86 BGY86/05 BGY87 BGY87/J1 BGY87B BGY88 BGY88/04 BGY88/04 BGY88/07 BGY887/02 BGY887BO BGY887BO/FC BGY887BO/SC ON4520/09 ON4520/2 ON4594/M5 ON4749 ON4749 ON4831-2 ON4869 ON4876 ON4890 ON4890 ON4990 OQ2545 OQ2545B PMBT3640/AT PN4392 PN4393 SA5223 TZA3001 TZA3001 TZA3023 TZA3031 TZA3031 TZA3033 TZA3041 TZA3042B TZA3043 TZA3043B XSA5223 XSA5223 Product family CATV CATV CATV CATV CATV CATV CATV CATV CATV CATV CATV CATV CATV CATV CATV CATV CATV CATV CATV CATV CATV CATV CATV CATV CATV CATV CATV CATV CATV CATV CATV CATV CATV CATV CATV CATV CATV OM OM WB trs FET FET OM OM OM OM OM OM OM OM OM OM OM OM OM NXP replacement type BGY787 BGY787 BGY787 BGO827 BGO827/SC0 BGY585A BGY585A BGY585A BGY585A BGY585A BGY585A BGY585A BGY585A BGY587 BGY587 BGY587 BGY587 BGY587B BGY588N BGY588N BGY588N BGY588N BGY887 BGO827 BGO827/FC0 BGO827/SC0 BGY687 BGY687 BGY585A BGY588N BGY588N BGY885A BGY587 BGY1085A BGD712 BGD712 BGD885 TZA3011 TZA3011 BFS17 PMBF4392 PMBF4393 TZA3036 TZA3047 TZA3047 TZA3026 TZA3047 TZA3047 TZA3036 TZA3047 TZA3047 TZA3046 TZA3046 TZA3036 TZA3036 5. Focus applications & products 5.1 High performance miniature BAW filters and duplexers Bulk Acoustic Wave (BAW) filters and duplexers for Front-End Modules and Cellular Phones Bulk Acoustic Wave filters provide high performance, ultra small size solutions for next generation integrated cellular phones. Together with NXP Waferlevel Package this allows for seamless integration of BAW filters into RF front-end modules. The NXP series of high-performance Bulk Acoustic Wave (BAW) filters and duplexers is optimized for (W-)CDMA/GSM cellular phones. Available in NXP-patented Wafer Level Chip Scale Packaging (WL-CSP), they provide superior performance in an ultra-small size. Features • High performance BAW filters and duplexers - Low insertion loss - High stopband rejections/isolations - Low temperature drift - Superior power handling - Enhanced ESD robustness • Ultra-small, NXP-Waferlevel Package 2 - Ultra-small footprint (as small as 1.5mm ) - Very low profile (height < 450 µm after solder reflow) Benefits • Optimized for: - UMTS interstage filter (band II) - UMTS Duplexer (band I, II, III, VII) - Satellite radio, Bluetooth • Easy package-less chip scale integration into RF front-end Compared to Surface Acoustic Wave (SAW) filters, BAW typically offers superior power handling, enhanced ESD robustness, smaller size, reduced in-band insertion loss and increased steepness of the filter skirts in lower and upper transition bands. BAW filters also offer less center frequency drift versus temperature change and are more suitable for applications at frequencies ranging from 1 to 20 GHz. High-performance BAW filters & Duplexers Designed for easy integration into front-end modules, they deliver low insertion loss and high selectivity. NXP BAW filters and duplexers support receive (Rx) and transmit (Tx) applications in (W-)CDMA and other wireless applications higher than 1.5 GHz : • US PCS (1900 MHz) - BWT190(A) high-rejection Tx interstage filter - BWD190(A) duplexer • UMTS (2100MHz) - BWD210(A) BAW duplexer • Satellite filter (2300 MHz) - BWR230(A) antenna filter module • In house EM simulation to support FEM design in • Reduced PCB implementation size • Ideal for high frequency applications • Superior performance in very small size NXP Semiconductors RF Manual 10th edition 59 NXP Semiconductors BAW devices Type Description BWT190(A) PCS Tx interstage filter BWD190(A) PCS duplexer BWD210(A) UMTS duplexer BWR230(A) Satellite filter Freq. Size chip scale (MHz) (mm2 ) 1900 1.4 x 0.7 Tx: 1.3 x 0.9 1900 Rx: 1.4 x 0.9 Tx: 1.3 x 0.9 2100 Rx: 1.4 x 0.9 2300 n.a. Molded 2.0 x 1.6 3 x 2.5 3 x 2.5 1.6 x 1.0 Electrical characteristics of the BWD190A, Tj = 25°C,Z0= 50Ω Parameter Insertion Loss Band Tx Rx Tx Frequency (MHz) 1850 – 1910 1930 – 1990 Ripple Rejection Tx to Antenna Rx Rx to Antenna Tx Tx Return Loss Rx Antenna Tx Isolation (Tx – Rx) Rx Passband characteristics of duplexer BWD190A 60 NXP Semiconductors RF Manual 10th edition Min (dB) 41 50 12 12 12 53 45 Max (dB) 2.8 3.0 0.5 - 5.2 Total solution for satellite LNB Create a Ku-band DVB-S LNB for less, with higher reliability NXP fully integrated down converter (PLL synthesizer/mixer/amplifier) TFF1004HN for satellite LNB The TFF1004HN is an integrated downconverter for use in Low Noise Block (LNB) converters in a 10.7 GHz to 12.75 GHz Ku band satellite receiver system. This alignment-free concept replaces current solutions that require components such as GaAs mixer and DRO. As part of our LNB chipset, it enables a Ku-band satellite receiver that lowers total cost of ownership and guarantees the stability of the local oscillator. TFF1004HN is a highly integrated IC that includes an LNA, a mixer, a down-converter, a PLL, a crystal oscillator, and an IF buffer. It is manufactured in NXP’s breakthrough SiGe BiCMOS process for microwave applications, which is more costeffective than GaAs processes and more reliable than discrete implementations. To comply with Asian and European DVB-S standards, the TFF1004HN supports RF input frequencies between 10.7 and 12.75 GHz, and uses a selectable LO that operates at 9.75 or 10.6 GHz. Features •4 Pre-amplifier, mixer, buffer amplifier, and PLL synthesizer in one IC •State-of-the-art SiGe BiCMOS process •Alignment-free concept •LO frequency with XTAL control •Low phase noise •Switched LO frequency: 9.75 and 10.6 GHz •Low spurious •HVQFN24 package (4 x 4 x 0.85 mm) •Part of complete LNB chipset: - NXP UAF3000TS for supply and band/polarization switching - NXP BFU725F for 2nd LNA stage •Demo board available Application •4 Ku-band DVB-S receiver Designed for use in the Low Noise Block (LNB) of a Ku-band satellite receiver for Asian and European standards, the NXP It is housed in a small HVQFN24 package that measures only 4 x 4 x 0.85 mm, and is designed to work as part of a complete chipset that provides a total LNB solution. Complete LNB chipset The chipset consists of the TFF1004HN, the UAF3000TS, and the BFU725F. The UAF3000TS is a FET bias controller with a polarization switch and tone detection. It provides biasing for up to three LNA devices. An integrated bandgap reference ensures the accuracy of voltage and tone detection, also over temperature. For horizontal and vertical switching, there is an integrated supply-voltage detector, and for switching between high and low bands, there is a 22-kHz tone detector. The supply voltage range, 3.3 V or 5 V, is detected automatically. The BFU725F is an NPN microwave transistor for high-speed, low-noise applications. In the LNB chipset, it is used for the second LNA stage. It is manufactured in a 110-GHz fT-SiGeC technology, so it delivers an excellent noise figure (1.0 dB at 12 GHz), and a high maximum stable gain (13 dB at 12 GHz). NXP Semiconductors RF Manual 10th edition 61 UAF3000 3.3 V REGULATOR SUPPLY & BAND/POLARIZATION SWITCHING horizontal 1st STAGE LNA LO_SEL VCC vertical BFU725F 1st STAGE LNA 2nd STAGE LNA TFF1004 image reject IF gain PLL 9.75/10.6 GHz brb010 LNB application with TFF1004HN, UAF3000TS, and BFU725F TFF1004HN demo board TFF1004HN BFU725F UAF3000TS 62 Input frequency range (GHz) 10.7 to 12.75 Conversion gain Gc (dB) 32 Typ. collector current IC(max) (mA) Transition frequency fT (GHz) Noise figure NF (dB) @ 12 GHz 8 68 1.0 Supply voltage VCC (V) Drain voltage VD (V) Drain current IDO (mA) 3.3 or 5 2 10 NXP Semiconductors RF Manual 10th edition Noise figure NF (dB) 9 Output IP3 IP3(out) (dB) 10 Switched LO frequency (GHz) 9.75 / 10.6 Max. stable power gain MSG/GP(max) (dB) @ 12 GHz 13 Collector-emitter breakdown voltage BVCEO (V) 3.2 Supply current ICC (mA) 6 Polarization detection voltage VPOL (V) 14.75 5.3 NXPCATVC-familyfortheChineseSARFTstandard Connectingpeople,protectingyournetwork SpeciallydesignedfortheChineseHybridFiberCoax(HFC)infrastructure,NXPCATVC-family offersyouatotalsolutionforcableTVnetworks.Itisbothflexibleenoughforconnectingrural communitiesaspartofChina’s‘Connectingeveryvillage’programandpowerfulenoughfor upgradingmajorcitiesfromanalogtohigh-enddigitalservices.AllC-typedevicesarecompliant withtheChineseStateAdministrationforRadio,FilmandTelevision(SARFT)standard,andcover mostHFCapplicationsinthe550-870MHzrange. Further extending our high quality CATV portfolio, this new family lets you address an even wider range of HFC applications. Dedicated solutions for the implementation of CATV systems in China, our C-type devices deliver the performance you need for modern TV infrastructures. Products • BGY588C, BGE788C and CGY888C push-pull amplifiers • BGD712C, CGD944C and CGD942C power doublers • BGO807C optical receiver Features • Excellent linearity, stability and reliability • High power gain • Extremely low noise • Silicon Nitride passivity • GaAs HFET dies for high end devices The BGY588C, BGE788C and BGD712C devices cover the frequency range from 550 MHz to 750 MHz. Extending the C-family portfolio into the high-end segment, the CGD944C, CGD942C, CGY888C and BGO807C operate between 40 MHz and 870 MHz and have been specifically tested under Chinese raster conditions. Manufactured using our GaAs HFET die process, the CGD942C, and CGD944C are high-gain, highperformance 870 MHz power doublers. They are capable of satisfying the demanding requirements of top-end applications including high-power optical nodes. Our GaAs HFET MMIC dies are providing ‘by design’ the best ESD protection levels with no needs for external TVS components normally used with GaAs pHEMT devices. All CATV C-type devices feature a see-through cap that makes it easy to distinguish them from counterfeit products. Benefits • Compliant with Chinese SARFT HFC networks standard • Transparent cap allows confirmation of product authenticity • Rugged construction NXPSemiconductorsRFManual10thedition 63 BGY588C and BGE788C The last stage of an HFC network structure is called a terminating amplifier or ‘user amplifier’ as it is close to the subscribers. Each terminating amplifier requires a single module such as BGY588C for 550 MHz, BGE788C for 750 MHz and CGY888C for 860 MHz systems. These modules are fitting perfectly in the Chinese ‘Connecting to Every Village’ projects. IN port PAD EQ BGY588C BGE788C CGY888C BGD712C The BGD712C is a 750 MHz, 18 dB power doubler module. It has been designed for 750 MHz optical nodes including ordinary or optical receivers and distribution amplifiers. It can also be used in line extender amplifiers together with a 750 MHz push-pull module, such as BGY785A or BGY787. As such it can be used widely in Chinese ‘Connecting to Every Village’ projects. IN port OUT port bra820 CGD944C and CGD942C Our full GaAs power doublers modules, CGD942C and CGD944C offer high output power and better CTB and CSO than other modules. Designed for high-end HFC networks containing optical nodes with multiple out-ports, these modules enable each port to directly cover at least 125 subscribers. These two devices are ideal when used in upgrading HFC networks to 860 MHz. PAD OUT port EQ BGY785A BGY787 BGD712C bra821 BGO807C BGO807C is an integrated optical receiver module that provides high output levels and includes an integrated temperature compensated circuitry. In your optical node design, BGO807C enables a high performance/ price ratio and ruggedness. When upgrading an HFC network from analog to digital our BGO807C is the perfect fit. CGD942C/CGD944C PAD H L OUT port 1 BGD812 CGD942C/CGD944C PAD EQ PAD BGO807C RF switch (N + 1) BGY885A BGD812 BGY887 H L PAD CGD942C/CGD944C PAD H L BGO807C OUT port 3 CGD942C/CGD944C BGO807C PAD H L NXP Semiconductors RF Manual 10th edition EQ BGY885A H L OUT port 1 H L OUT port 2 BGD812 PAD bra823 OUT port 4 bra822 64 PAD OUT port 2 C-family application information NXP C-family by application Application Optical node Optical receiver Distribution amplifier Line extender amplifier Terminating amplifier BGY588C • BGE788C CGY888C • • • • BGD712C • • • • BGO807C • • • • CGD944C • • • • CGD942C • • Push-pull amplifiers Parameters Power gain (dB) Slope cable equivalent (dB) Composite triple beat (dB) Composite 2nd order distortion (dB) Noise (@ fmax) (dB) Total current comsumption (mA) Frequency range (MHz) typ. range max. max. max. typ. range BGY588C 34,5 0.2 - 1.7 -57 -62 8 325 40 - 550 BGE788C 34,2 0.3 - 2.3 -49 -52 8 305 40 - 750 CGY888C 35,5 1.5 typ. -66 -64 3 typ. 280 40 - 870 typ. range max. max. max. typ. range BGD712C 18,5 0.5 - 1.5 -62 -63 7 395 40 - 750 CGD944C 25 1-2 -66 -67 5 450 40 - 870 CGD942C 23 1-2 -66 -67 5 450 40 - 870 Power doublers Parameters Power gain (dB) Slope cable equivalent (dB) Composite triple beat (dB) Composite 2nd order distortion (dB) Noise (@ fmax) (dB) Total current comsumption (mA) Frequency range (MHz) Optical receiver Parameters Responsivity (Rmin) Slope cable equivalent (dB) Composite triple beat (dB) Composite 2nd order distortion (dB) Noise (@ fmax) (dB) Total current comsumption (mA) Frequency range (MHz) Connector BGO807C min. 800 range 0-2 max. -71 max. -55 max. 8,5 typ. 190 range 40 - 870 - / SCO / FCO NXP Semiconductors RF Manual 10th edition 65 5.4 Upgrade to a sustainable 1-GHz CATV network NXP high-gain power doublers CGD104x for 1-GHz CATV applications These high-performance GaAs devices for 1-GHz CATV applications make it easy for cable operators to extend their services to include HDTV, VoIP, and digital simulcasting. Designed for 1-GHz “sustainable networks”, these highperformance GaAs devices enable extended bandwidth and higher data rates. They deliver increased network capacity and make way for high-end services like HDTV, VoIP, and digital simulcasting. The power doublers CGD1042 and CGD1044 are ideal for use in line extenders and trunk amplifiers. Their high-output counterparts, the CGD1042H and CGD1044H, are designed for use in fiber deep-optical-node applications (N+0/1/2), delivering the highest output power on the market today. Products • Power doublers: CGD1042, CGD1044 • High-output power doublers: CGD1042H, CGD1044H The GaAs HFET die process delivers high gain and high performance, along with lower current and better CTB and CSO ratings. Features • Excellent linearity, stability, and reliability • High power gain • Extremely low noise • Silicon Nitride passivity • GaAs HFET dies for high-end applications • Rugged construction These 1-GHz solutions are designed for durability and offer superior ruggedness, an extended temperature range, highpower overstress capabilities, and high ESD levels. The result is low cost of ownership. Benefits • Simple upgrade to 1-GHz capable networks • Optimized heat management • Excellent temperature resistance • Low total cost of ownership • High ESD levels • High power-stress capability • Highly automated assembly Applications • Hybrid Fiber Coax (HFC) applications • Line extenders • Trunk amplifiers • Fiber deep-optical-node (N+0/1/2) 66 NXP Semiconductors RF Manual 10th edition The GaAs die is inserted in a unique HVQFN package that is then mounted on thermal vias that manage heat transfer to the heat sink. Temperature-control circuitry keeps the module’s high performance stable over a wide range of temperature changes. Assembly is fully automated and requires almost no human intervention and therefore repeatability remains very high. Upcoming push-pull products New push-pulls, currently under development, will combine with the power doublers to service almost all modern HFC applications. The push-pull CGY1041 will deliver a gain of 21 dB, the CGY1043 a gain of 23 dB and the CGY1047 a gain of 27dB. Quick reference data Parameters Power gain (dB) Slope cable equivalent (dB) Composite triple beat (dB) Composite 2nd order distortion (dB) Noise (@ fmax) (dB) Total current comsumption (mA) Frequency range (MHz) (1) (2) CGD1042 23 2 -70(1) -75(1) 5 450 40 - 1000 typ. typ. typ. typ. max. typ. range CGD1044 25 2 -70(1) -75(1) 5 450 40 - 1000 CGD1042H 23 1,5 -75(2) -76(2) 6 450 40 - 1000 CGD1044H 25 1 -75(2) -76(2) 6 450 40 - 1000 79 analog channels, 13.9 dB extrapolated tilt up to 1 GHz, Vout = 56.9 dBmV @ 1GHz 79 analog channels + 75 digital channels (-6 dB offset, 18 dB extrapolated tilt up to 1 GHz, Vout = 59 dBmV @ 1GHz) CGD942C/CGD944C PAD H L OUT port 1 CGD942C/CGD944C PAD EQ PAD BGO807C RF switch (N + 1) BGY885A BGD812 BGY887 H L OUT port 2 CGD942C/CGD944C PAD H L OUT port 3 CGD942C/CGD944C BGO807C PAD H L OUT port 4 bra822 An optical node with multiple out-ports using the CGD1042(H) and CGD1044(H) Power doubler shown without cap NXP Semiconductors RF Manual 10th edition 67 5.5 A perfect match up to 20 GHz SiGeC microwave NPN transistor BFU725F Meet the trend towards higher frequencies. With NXP Semiconductors’ latest SiGeC microwave NPN transistor BFU725F, you get high switching frequencies plus extremely high gain and low noise. All this in an easy-to-use SOT343F package. It’s the ideal solution for applications up to 20 GHz. The NPN microwave transistor BFU725F delivers an unbeatable blend of high switching frequency, high gain and very low noise. Thanks to its ultra-low noise figure, it’s perfect for your sensitive RF receivers particularly those for high-performance cell phones. Alternatively, with its high cut-off frequency, it’s your ideal solution for microwave applications in the 10 GHz to 30 GHz range, such as satellite TV receivers and automotive collision avoidance radar. Features •Very low noise (0.4 dB at 1.8 GHz / 0.67 dB at 5.8 GHz) • High maximum stable gain (27.8 dB at 1.8 GHz / 10 dB at 18 GHz) • High switching frequency (f T >100 GHz / fMAX >150 GHz) • Plastic surface-mount SOT343F package Benefits • SiGeC process delivers high switching frequency from a silicon-based device • Cost-effective alternative to GaAs devices • RoHS compliant Applications • GPS systems • DECT phones • Low noise amplifier (LNA) for microwave communications systems • 2nd stage LNA and mixer in direct broadcast satellite (DBS) low-noise blocks (LNBs) • Satellite radio • WLAN and CDMA applications • Low-noise microwave applications 68 NXP Semiconductors RF Manual 10th edition The BFU725F get its outstanding performance from our innovative silicon-germanium-carbon (SiGeC) BiCMOS process. QUBiC4X was designed specifically to meet the needs of real-life, high-frequency applications and delivers an unrivalled fusion of high power gain and excellent dynamic range. It combines the performance of gallium-arsenide (GaAs) technologies with the reliability of a silicon-based process. In addition, with the BFU725F, you don’t need a biasing IC or negative biasing voltage. So it’s a much more cost-effective solution than GaAs pHEMT devices. Quick reference data 1 Parameter Collector-emitter breakdown voltage Maximum collector current Transition frequency Symbol BVCEO I C(max) fT Conditions I C = 1 mA; I B = 0 Noise figure NF Maximum stable power gain MSG / G P(max) Value 3.2 V 40 mA 68 GHz 0.4 dB 0.45 dB 0.7 dB 1.0 dB 26.6 dB 25.5 dB 17 dB 13 dB VCE = 2 V; I C = 25 mA; f = 2 GHz VCE = 2 V; I C = 5 mA; f = 1.8 GHz; Γs = Γopt VCE = 2 V; I C = 5 mA; f = 2.4 GHz; Γs = Γopt VCE = 2 V; I C = 5 mA; f = 5.8 GHz; Γs = Γopt VCE = 2 V; I C = 5 mA; f = 12 GHz; Γs = Γopt VCE = 2 V; I C = 25 mA; f = 1.8 GHz VCE = 2 V; I C = 25 mA; f = 2.4 GHz VCE = 2 V; I C = 25 mA; f = 5.8 GHz VCE = 2 V; I C = 25 mA; f = 12 GHz Calculated from noise figure using a lowpass bandwidth filter at 0.7x bit rate and a source with an extinction ratio of 10% and a photodiode responsivity of 0.9A/W. bra856 80 fT (GHz) 60 30 40 20 20 10 0 bra857 40 gain (dB) 0 10 20 IC (mA) 30 Transition frequency as a function of collector current (typical values) 0 MSG GMAX MSG S21 0 4 8 12 16 f (GHz) 20 Gain as a function of frequency (typical values) NXP Semiconductors RF Manual 10th edition 69 5.6 Best-in-class LNB performance MMIC wideband amplifier BGA2714 Improve the performance of your LNB design with our MMIC wideband amplifier BGA2714. It delivers best-in-class performance at very low current, is small and needs very few external components. In short, it’s the ideal 1st stage IF amplifier for LNBs and other low-noise wideband applications. •Unconditionally stable •Very few external components required •Compact SOT363 package Applications •LNB IF amplifier •General-purpose low-noise wideband amplifier for frequencies up to 2.7 GHz Our MMIC wideband amplifier BGA2714 is designed to meet the specific needs of LNB designs. It operates from a conveniently low supply voltage with a low supply current. A demoboard is available to help further simplify your design-in process Features •E xtremely flat gain curve (21 dB ± 1 dB up to 2.5 GHz) •Wide frequency range (up to 2.7 GHz @ 3 dB gain bandwidth) •Internally matched to 50 Ω •Very low current (4.6 mA @ 3 V) •Low supply voltage (3 V) •Good linearity (2.1 dBm @ 1 GHz) •Low noise (2.2 dB @ 1 GHz) •E xcellent reverse isolation (> 50 dB up to 2 GHz) In addition, it delivers industry-leading performance with a wide frequency range, high and flat power gain and low noise Supplied in a compact, industry-standard SOT363 package, it simplifies system integration. MMICs like NXP Semiconductors’ BGA2714 are smart RF solutions that automatically compensate for temperature and process variations. They integrate transistors, resistors and capacitors into a single device, reducing component count and simplify design. In fact, with the BGA2714 you need just two coupling capacitors and an RF decoupling capacitor. mixer 30 Gp (dB) from RF circuit 25 wideband amplifier 20 oscillator 1 15 2 Quick reference data 5 0 0 500 1000 1500 2000 2500 3000 f (MHz) Tamb = 25ºC; Pdrive = - 40 dBm; Z 0 = 50 Ω 1 Vs = 3.3 V; I s = 4.96 mA 2 Vs = 3.0 V; I s = 4.58 mA 3 Vs = 2.7 V; I s = 4.16 mA Power gain as function of frequency; typical values 70 bra922 Application as IF amplifier 3 10 to IF circuit or demodulator NXP Semiconductors RF Manual 10th edition Symbol Parameter Vs supply voltage Condition Typical value 3 V Is supply current 4.58 mA Gp power gain 1 GHz NF noise figure 1 GHz 20.4 dB 2.2 dB PL(sat) saturated load power 1 GHz - 3.4 dBm 5.7 Mobile applications break free with WiMAX MIMO WiMAX 802.16e MIMO transceivers UXA234xx High broadband mobile applications are quickly becoming a reality thanks to the benefits of smart antennae technologies, such as WiMAX 802.16e multiple input/multiple output (MIMO). By offering a complete family of compatible receiver/transmitters, including full dual Rx/Tx solutions, NXP helps you give consumers a richer mobile lifestyle with robust high-speed internet access and video streaming from their mobile equipment. Applications •Smart phones •L aptop PCs •PDAs •Games consoles •PCI and PCIe cards Features •Fully integrated direct up transmitter and ZIF receiver architecture •Dual Rx and Tx for MIMO operation •Low noise, high dynamic range receiver with high linearity •Fully integrated VCO with integrated supply voltage regulator •Serial bus digital interface (4 wires) •Supply voltage 2.7 V to 2.9 V •Support for channel bandwidths from 3.5 MHz to 20 MHz Benefits •E xtremely low noise figure •Support for flexible calibration techniques ensures optimum performance and lowest power •Field proven solution •No external IF filter required •Minimal external component requirement Our next generation UXA234xx WiMAX products enable high broadband mobile applications, by allowing you to add robust high-speed internet access and video streaming to mobile equipment. Developed in close cooperation with end customers and baseband companies, NXP Semiconductors’ proven WiMAX solutions deliver best-in-class performance. They provide flexible interfacing to a variety of baseband devices and offer seamless handover from basestation to basestation. Covering frequencies from 2.3 GHz to 3.8 GHz, these fully integrated, low-power, direct conversion transceivers easily allow total WiMAX system solutions to meet TTA, FCC and ETSI requirements. With dual receiver/transmitter configurations available they can also deliver better uplink performance and improve your total end-user system. In addition, low power requirements ensure longer battery life. Highly integrated, the UXA234xx family requires the minimum of extra external parts, significantly reducing overall component count. Their small 6 mm x 6 mm footprint gives further space and cost savings, while being housed in a lowprofile (0.85 mm) package ensures they meet the needs of mobile manufacturers. NXP Semiconductors RF Manual 10th edition 71 Mx LNA filter ADC 90 0 antenna2 SWITCH LOOP BACK ADC receiver Mx LNA filter ADC 90 VGA buffer 0 ADC antenna1 SWITCH LOOP BACK TEMP. SENSOR TCXO POWER DETECTOR PLL PA /2 transmitter 90 PA driver 0 filter DAC Mx DAC filter POWER DETECTOR PA transmitter 90 PA driver 0 filter DAC Mx DAC RF IC filter BB IC bra970 Typical application diagram using the UXA23476 UXA23465 UXA23466 UXA23475 UXA23476 UXF23480 UXF23460 UXF23470 72 Frequency range (GHz) 2.3 - 2.7 2.3 - 2.7 3.3 - 3.8 3.3 - 3.8 2.3 - 2.4 2.5 - 2.7 3.3 - 3.8 Type NF (dB) 2 Rx/1 Tx 2 Rx/2 Tx 2 Rx/1 Tx 2 Rx/2 Tx 1 Rx/1 Tx 1 Rx/1 Tx 2 Rx/1 Tx 2.5 2.5 3.0 3.0 3.2 3.5 3 NXP Semiconductors RF Manual 10th edition Rx gain (max) (dB) 87 87 87 87 79 77 87 ICC (mA) RX/TX 81/100 81/182 81/100 81/182 129/153 129/140 50/85 Tx gain range (dB) 74 74 74 74 74 74 74 Linear output power meeting spectrum mask (dBm) +2.5 (TTA) +1 (ETSI, FCC) +2.5 (TTA) +1 (ETSI, FCC) 0 (ETSI) 0 (ETSI) +1 +1 (0) ETSI Package size HVQFN48 (mm) 6 x 6 x 0.85 6 x 6 x 0.85 6 x 6 x 0.85 6 x 6 x 0.85 7 x 7 x 0.85 7 x 7 x 0.85 6 x 6 x 0.85 5.8 Boost RF performance and reduce system size RF PIN diodes in leadless SOD882T Deliver the maximum performance and functionality in the smallest space with our new RF PIN diodes in SOT882T. These unique products enhance the RF performance of your system while reducing its form factor and cutting your time to market. •Base stations •eMetering •Bluetooth and wireless LAN •Car Radio Our RF PIN diodes are ideal for a wide range of mobile communications and RF applications. Their low loss and low distortion levels improve battery life and quality in mobile phones and cordless phones. Moreover, their extremely low forward resistance, diode capacitance and series inductance simplify design-in. Features •Low series inductance •Low capacitance •Leadless, package with very small footprint (1.0 mm x 0.6 mm) •Low profile (0.4 mm) •Low insertion loss Benefits •Unrivalled performance •Faster time to market •Smaller end products •Easier assembly We offer an extensive portfolio of RF PIN diodes. So you’re sure to find the right solution for your needs. The latest additions to this portfolio are housed in the ultra-small, leadless SOD882T package, making them particularly suitable for wireless devices. As part of our ultra-thin leadless package (UTLP) platform, the SOD882T package uses a patent-pending etch process that produces extremely high silicon to footprint ratio and a profile as low as 0.4 mm. In addition, the package has no leads and so delivers very low parasitics for maximum RF performance. This unique combination of properties results in devices that maximize the performance and functionality of your system while reducing its size and weight. They also simplify board assembly to help cut your time to market. Applications •Cellular and cordless phones •Low noise blocks •Multi-switch boxes •Set-top boxes •CATV infrastructure NXP Semiconductors RF Manual 10th edition 73 Product overview Type Limits If (mA) 50 60 100 100 100 100 100 100 Vr (V) 50 60 50 50 100 30 60 50 BAP50LX BAP51LX BAP55LX BAP63LX BAP64LX BAP65LX BAP1321LX BAP142LX 0.5 mA 25 5.5 3.4 2.5 20 3.4 3.3 Typ. RD (Ω) @ 1 mA 14 3.6 2.3 1.95 10 1 2.4 2.4 10 mA 3 1.5 1 1.17 2 0.56 1.2 1 Typ. Cd (pF) @ 1V 0.35 0.3 0.23 0.35 0.37 0.6 0.35 0.23 0V 0.45 0.4 0.27 0.4 0.52 0.65 0.4 0.26 20 V 0.3 (@ 5 V) 0.2 (@ 5 V) 0.18 (@ 5 V) 0.3 0.23 0.375 0.25 0.15 Functions of pin diodes Telecom Cellular Switching Attenuating 74 • Cordless • Lownoise block • NXP Semiconductors RF Manual 10th edition Consumer and automotive Multi Set top Walkieswitch talkie box box • • • Industrial Car radio CATV Base station • • • Connectivity eMetering Bluetooth • • WLAN • Whatifyoucouldbuildtheworld’sbest portableWiMAXdevice,now! LookatWiMAX,chapter5.7 NXPSemiconductorsRFManual10thedition 5 6. Packing and packaging information 6.1 Ultra thin leadless package platform The unique design improves the package’s electrical and thermal performance, and at the same time increases the moisture resistance. The chosen technology enables the reduction of added package material to a minimum, to come as close to a bare die as possible, without the bare die drawbacks in assembly. The resulting very low parasitics give a much better performance than leaded packages or even QFN type, enabling a design-in range, which includes high-frequency applications operating at up to 24 GHz. NXP ultra-thin leadless package (UTLP) platform for faster time-to-market, smaller form factor. Features • Low height (0.4 mm) • Small footprint • Very flexible platform • High silicon-to-footprint ratio • Increased performance • Footprint compatible with JETA standard SC-101 • Very efficient packing (15k/7” reel) • RoHs-compliant, green plastic. The product creation flexibility also supports packaging techniques like multiple dies, multiple leads with isolated die pads, re-routing and even fine pitch flip chip, which enhances RF performance even further. This enables more functionality in a smaller space. The result is a package, which increases customer’s design flexibility, reduces time to market and improves performance in a broad range of (mobile) applications. The package makes board assembly easier. The footprint is compatible with JETA standard SC-101 and because of the built-in standoff; both metal defined and solder resist defined PCB layouts can be used. To lessen the impact on the environment the package is already dark green and packed with as many as 15k units on a 7” reel. Ordering information Benefits • Improved electrical, thermal and moisture resistance • Reduced noise • Easier board assembly • More functionality in a smaller space • Excellent RF performance. The NXP ultra-thin leadless package (UTLP) uses a patentpending etch process, enabling a lead frame with independent top and bottom layouts, giving maximum product creation flexibility. A very high silicon-to-footprint ratio, combined with a low profile of 0.4 mm makes the device perfectly suited for space constrained portable applications, like mobile communications, PDA’s and handheld devices, increasing performance with same footprint. 76 NXP Semiconductors RF Manual 10th edition Type number BAP50LX BAP51LX BAP63LX BAP64LX BAP65LX BAP1321LX BB202LX BB178LX BB179LX BB182LX BAP55LX BAP142LX Description Silicon PIN diode Silicon PIN diode Silicon PIN diode Silicon PIN diode Silicon PIN diode Silicon PIN diode Low-voltage variable FM capacitance diode VHF-high variable capacitance diode UHF variable capacitance diode VHF-low variable capacitance diode Silicon PIN diode Silicon PIN diode Package SOD882T SOD882T SOD882T SOD882T SOD882T SOD882T SOD882T SOD882T SOD882T SOD882T SOD882T SOD882T 6.2 Packing quantities per package with relevant ordering code Packing quantity 3,000 11,000 Product 12NC ending 115 135 Packing method 8 mm tape and reel 8 mm tape and reel SOD323/SC-76 3,000 10,000 115 135 8 mm tape and reel 8 mm tape and reel SOD523/SC-79 3,000 10,000 8,000 20,000 115 135 315 335 8 mm tape and reel 8 mm tape and reel 2 mm pitch tape and reel 2 mm pitch tape and reel SOD882T 15,000 315 8 mm tape and reel SOT23 3,000 10,000 215 235 8 mm tape and reel 8 mm tape and reel SOT54 5,000 5,000 10,000 10,000 112 412 116 126 bulk, delta pinning bulk, straight leads tape and reel, wide pitch tape ammopack, wide pitch SOT89/SC-62 1,000 4,000 115 135 12 mm tape and reel 12 mm tape and reel SOT115 100 112 4 tray/box SOT143(N/R) 3,000 10,000 215 235 8 mm tape and reel 8 mm tape and reel SOT223/SC-73 1,000 4,000 115 135 12 mm tape and reel 12 mm tape and reel SOT323/SC-70 3,000 10,000 115 135 8 mm tape and reel 8 mm tape and reel SOT343(N/R) 3,000 10,000 115 135 8 mm tape and reel 8 mm tape and reel SOT360 2,500 118 16 mm tape and reel SOT363/SC-88 3,000 10,000 115 135 8 mm tape and reel 8 mm tape and reel SOT403 2,500 118 12 mm tape and reel SOT416/SC-75 3,000 115 8 mm tape and reel SOT560 490 2,450 551 557 tray multiple trays SOT567 200 500 112 118 4tray/box 32 mm tape and reel SOT616 6,000 118 12 mm tape and reel SOT619 260 4,000 551 518 tray multiple trays SOT638 90 450 551 557 tray multiple trays SOT666 4,000 115 8 mm tape and reel SOT724 2,500 118 16 mm tape and reel SOT778 490 4,000 551 518 tray multiple trays Package SOD110 NXP Semiconductors RF Manual 10th edition 77 6.3 Marking codes list In case a ‘%’ is given in the marking code, it means this type can be assembled at different assembly sites. Instead of a ‘%’, you will find: p = made in Hong-Kong t = made in Malaysia W = made in China Marking code 1 2 7 8 9 %13 %3A %4A %5A %6G %6J %6K %6S %6W %6X %6Y %AB 10% 1B% 1C% 1N% 1W20% 21% 22% 24% 25% 26% 28% 29% 2A% 2L 2N 2R 30% 31% 32% 33% 34% 38% 39% 40% 41% 42% 47% 48% 49% 4A 4K% 4L% 4W% 50% 5K% 5W% 6F% 6K% 6W% 7K% 8K% A1 78 Type BA277 BB182 BA891 BB178 BB179 BB207 BGA6289 BGA6489 BGA6589 PMBF4393 PMBF4391 PMBF4392 PMBFJ176 PMBFJ175 PMBFJ174 PMBFJ177 BF1210 BAT18 BGA2717 BAP50-05 BAP70-04W BAP51-05W BF545A BF545B BF545C BF556A BF556B BF556C BF861A BF861B BF862 BF1208 BF1206F BF1207F BF861C BFR505 BFR520 BFR540 BFT25A PMBFJ108 PMBFJ109 PMBFJ110 PMBFJ111 PMBFJ112 PMBFJ113 PMBFJ308 PMBFJ309 BF1208D BAP64-04 BAP50-04 BAP64-04W PMBFJ310 BAP64-05 BAP64-05W BAP1321-04 BAP64-06 BAP50-04W BAP65-05 BAP70-05 BA591 Package SOD523 SOD523 SOD523 SOD523 SOD523 SOT23 SOT89 SOT89 SOT89 SOT23 SOT23 SOT23 SOT23 SOT23 SOT23 SOT23 SOT363 SOT23 SOT363 SOT23 SOT323 SOT323 SOT23 SOT23 SOT23 SOT23 SOT23 SOT23 SOT23 SOT23 SOT23 SOT666 SOT666 SOT666 SOT23 SOT23 SOT23 SOT23 SOT23 SOT23 SOT23 SOT23 SOT23 SOT23 SOT23 SOT23 SOT23 SOT666 SOT23 SOT23 SOT323 SOT23 SOT23 SOT323 SOT23 SOT23 SOT323 SOT23 SOT23 SOD323 NXP Semiconductors RF Manual 10th edition Marking code A1 A1 A2 A2 A2 A2% A3 A3 A3 A3% A5 A5% A6% A7% A8 A8% A8% A9 B6B6% B7% BC% BFG135 BFG198 BFG31 BFG35 BFG541 BFG591 BFG94 BFG97 BLT50 BLT70 BLT80 BLT81 C1% C2% C4% C5% D2 D3 D4% E1% E1% E1% E2% E2% E3% FB FF FG G2 G2% G3% G4% G5% K1 K2 K4 K5 K6 Type BB208-02 BGA2001 BAT18 BB184 BB208-03 BGA2022 BAP64-03 BB198 BGA2003 BGA2031/1 BAP51-03 BGA2011 BGA2012 BFG310W/XR BAP50-03 BFG325W/XR PMBFJ620 BAP70-03 BGA2715 BFU725F BGA2716 BFQ591 BFG135 BFG198 BFG31 BFG35 BFG541 BFG591 BFG94 BFG97 BLT50 BLT70 BLT80 BLT81 BGM1011 BGM1012 BGM1013 BGM1014 BAP63-03 BAP65-03 BFR30/B BFS17 BFS17/FD BFS17W BFS17A BGA2712 BGA2709 BFQ19 BFQ18A BFQ149 BA278 BGA2711 BGA2748 BGA2771 BGA2776 BAP51-02 BAP51-05W BAP50-02 BAP63-02 BAP65-02 Package SOD523 SOT343 SOT23 SOD523 SOD323 SOT363 SOD323 SOD523 SOT343 SOT363 SOD323 SOT363 SOT363 SOT343 SOD323 SOT343 SOT363 SOD323 SOT363 SOT343F SOT363 SOT89 SOT223 SOT223 SOT223 SOT223 SOT223 SOT223 SOT223 SOT223 SOT223 SOT223 SOT223 SOT223 SOT363 SOT363 SOT363 SOT363 SOD323 SOD323 SOT23 SOT23 SOT23 SOT323 SOT23 SOT363 SOT363 SOT89 SOT89 SOT89 SOD523 SOT363 SOT363 SOT363 SOT363 SOD523 SOD523 SOD523 SOD523 SOD523 Marking code K7 K8 K9 L1 L2 L2 L2% L3 L3% L4 L4% L5 L6 L6% L7 L8 L8 L9% LA LA LA% LB% LD% LE LE% LF% LG% LH% LK% M08 M09 M1% M10 M2% M2% M26 M27 M28 M29 M3% M33 M33 M34 M34 M35 M41 M42 M6% M65 M66 M67 M74 M84 M85 M86 M91 M92 MB MC MD Type BAP1321-02 BAP70-02 BB199 BB202LX BAP51LX BB202 BF1203 BB178LX BF1204 BB179LX BF1205 BB179BLX BB181LX BF1206 BB182LX BA792 BB187LX BF1208 BB185LX BF1201WR BF1201 BF1201R BF1202 BF1202WR BF1202R BF1211 BF1212 BF1211R BF1212R PMBFJ308 PMBFJ309 BFR30 PMBFJ310 BF1207 BFR31 BF908 BF908R BF909 BF909R BFT46 BF861A BF909A BF861B BF909AR BF861C BF904A BF904AR BF1205C BF545A BF545B BF545C BSS83 BF556A BF556B BF556C BF991 BF992 BF998WR BF904WR BF908WR Package SOD523 SOD523 SOD523 SOD882T SOD882T SOD523 SOT363 SOD882T SOT363 SOD882T SOT363 SOD882T SOD882T SOT363 SOD882T SOD110 SOD882T SOT363 SOD882T SOT343 SOT143 SOT143 SOT143 SOT343 SOT143 SOT143 SOT143 SOT143 SOT143 SOT23 SOT23 SOT23 SOT23 SOT363 SOT23 SOT143 SOT143 SOT143 SOT143 SOT23 SOT23 SOT143 SOT23 SOT143 SOT23 SOT143 SOT143 SOT363 SOT23 SOT23 SOT23 SOT143 SOT23 SOT23 SOT23 SOT143 SOT143 SOT343 SOT343 SOT343 Marking code ME MF MG MG% MH MH% MK ML MO% MO% MO4 MO6 N N0 N0% N0% N1 N2 N2% N2% N28 N29 N3 N30 N33 N36 N37 N38 N39 N4 N4 N4% N42 N43 N44 N48 N49 N6% N7 N71 Type BF909WR BF1100WR BF909AWR BF994S BF904AWR BF996S BF1211WR BF1212WR BF998 BF998R BF904 BF904R BB181 BFR505T BFM505 BFS505 BFG505W/X BFR520T BFM520 BFS520 BFR520 BFR540 BFG520W BFR505 BFG505 BFG520 BFG540 BFG590 BFG505/X BFG520W/X BFQ540 BFS540 BFG520/X BFG540/X BFG590/X BFG520/XR BFG540/XR BFS25A BFG540W/X BFG10/X Package SOT343 SOT343 SOT343 SOT143 SOT343 SOT143 SOT343 SOT343 SOT143 SOT143 SOT143 SOT143 SOD523 SOT416 SOT363 SOT323 SOT343 SOT416 SOT363 SOT323 SOT23 SOT23 SOT343 SOT23 SOT143 SOT143 SOT143 SOT143 SOT143 SOT343 SOT89 SOT323 SOT143 SOT143 SOT143 SOT143 SOT143 SOT323 SOT343 SOT143 Marking code N8 N9 N9% NA NA% NB NB% NC NC% ND ND% NE NE% NF% NG% NH% P08 P09 P1 P1 P10 P11 P12 P13 P2% P2% P3 P4 P5 P5 P6 P7 P8 P9 PB PC PE PF PL R2% Type BFG540W/XR BFG540W BAP70AM BF1105WR BF1105R BF1109WR BF1109R BF1101WR BF1101R BFG424W BF1101 BFG424F BF1105 BF1109 BF1108 BF1108R PMBFJ108 PMBFJ109 BB131 BFG21W PMBFJ110 PMBFJ111 PMBFJ112 PMBFJ113 BFR92A BFR92AW BFG403W BFG410W BB135 BFG425W BFG480W BB147 BB148 BB149 BB152 BB153 BB155 BB156 BB149A BFR93A Package SOT343 SOT343 SOT363 SOT343 SOT143 SOT343 SOT143 SOT343 SOT143 SOT343 SOT143 SOT343 SOT143 SOT143 SOT143 SOT143 SOT23 SOT23 SOD323 SOT343 SOT23 SOT23 SOT23 SOT23 SOT23 SOT323 SOT343 SOT343 SOD323 SOT343 SOT343 SOD323 SOD323 SOD323 SOD323 SOD323 SOD323 SOD323 SOD323 SOT23 Marking code R2% R5 R7% R8% S S1% S2% S2% S3% S6% S7% S8% S9% SB% SC% T5 V1 V1% V10 V11 V12 V14 V15 V2% V2% V3% V4% V6% V8 W1 W1% W1% W2% W4% W6% W7% W9% X X1% X1% Type BFR93AW BFR93AR BFR106 BFG93A BAP64-02 BFG310/XR BBY40 BFG325/XR BF1107 BF510 BF511 BF512 BF513 BF1214 BB201 BFG10W/X BFG25AW/X BFT25 BFT25A BFG25A/X BFG67/X BFG92A/X BFG93A/X BFQ67 BFQ67W BFG67 BAP64-06W BAP65-05W BAP1321-03 BF1102 BFT92 BFT92W BF1102R BAP50-05W BAP51-04W BAP51-06W BAP63-05W BB187 BFT93 BFT93W Package SOT323 SOT23 SOT23 SOT143 SOD523 SOT143 SOT23 SOT143 SOT23 SOT23 SOT23 SOT23 SOT23 SOT363 SOT23 SOT343 SOT343 SOT23 SOT23 SOT143 SOT143 SOT143 SOT143 SOT23 SOT323 SOT143 SOT323 SOT323 SOD323 SOT363 SOT23 SOT323 SOT363 SOT323 SOT323 SOT323 SOT323 SOD523 SOT23 SOT323 NXP Semiconductors RF Manual 10th edition 79 7. Contacts and web links How to contact your authorized distributor or local NXP representative Authorized distributors Asia Pacific: http://www.nxp.com/profile/sales/asia_pacific_dist Europe / Africa / Middle East: http://www.nxp.com/profile/sales/europe_dist North America: http://www.nxp.com/profile/sales/northamerica_dist South America: http://www.nxp.com/profile/sales/southamerica_dist Local NXP Offices Asia Pacific: http://www.nxp.com/profile/sales/asia_pacific Europe / Africa / Middle East: http://www.nxp.com/profile/sales/europe North America: http://www.nxp.com/profile/sales/northamerica South America: http://www.nxp.com/profile/sales/southamerica 80 NXP Semiconductors RF Manual 10th edition Web links NXP Semiconductors: http://www.nxp.com NXP RF applications: http://www.nxp.com/rf NXP RF Manual web page: http://www.nxp.com/rfmanual NXP application notes: http://www.nxp.com/all_appnotes NXP varicaps: http://www.nxp.com/varicaps NXP cross-references: http://www.nxp.com/products/xref NXP RF PIN diodes: http://www.nxp.com/pindiodes NXP green packaging: http://www.nxp.com/green_roadmap NXP RF Schottky diodes: http://www.nxp.com/rfschottkydiodes NXP end-of-life: http://www.nxp.com/products/eol NXP RF MMICs: http://www.nxp.com/mmics NXP Quality Handbook: http://www.standardics.nxp.com/quality/handbook NXP RF wideband transistors: http://www.nxp.com/rftransistors NXP literature: http://www.nxp.com/products/discretes/documentation NXP RF FETs: http://www.nxp.com/rffets NXP packaging: http://www.nxp.com/package NXP RF CATV electrical & optical: http://www.nxp.com/catv NXP sales offices and distributors: http://www.nxp.com/profile/sales NXP optical networking: http://www.nxp.com/opticalnetworking NXP Semiconductors RF Manual 10th edition 81 th 1 0 ed ition 10 th editio n t h 1 0 e d th i t i o n RF manual 10 edition 10 Application and design manual for RF products TH September 2007 www.nxp.com ©2007 NXP B.V. All rights reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights. Date of release: September 2007 Document order number: 9397 750 16105 Printed in the Netherlands EDITI ON
Similar documents
Surface Mount (SMD) Packaging
4. Applies to all DFN/QFN body sizes unless otherwise specified in the table. 13” reel may not be available on all packages. Refer to datasheet for details. 5. DFN3030 / QFN3030 quantity of 3.0K on...
More informationSMD codes - theremino
53E=3M48 54E=3M57 55E=3M65 56E=3M74 57E=3M83 58E=3M92 59E=4M02 60E=4M12 61E=4M22 62E=4M32 63E=4M42 64E=4M53 65E=4M64 66E=4M75 67E=4M87 68E=4M99 69E=5M11 70E=5M23 71E=5M36 74E=5M49 73E=5M62 74E=5M76...
More informationWireless Semiconductor Products
• Basestation Tower Mounted Amplifier (TMA). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 • Basestation Multi-carrier Power Amplifier (MCPA). . . . . . . . ....
More information