130nm Technology - RF

130nm Technology - RF
A cost-effective and high performance RF CMOS technology for RF/mixed-signal applications
This technology platform, strengthened by its optimized RF flavours, brings dedicated solutions for Wireless,
Automotive, Industrial and Security applications.
Altis Semiconductor has been successfully serving major market players with this technology since 2001.
With more than 1 billion transceivers, Altis Semiconductor is a recognized leader in RF CMOS.
CMOS Process Features
• Technology Node: 130 nm
• Minimum Gate Length: 120 nm (drawn)
• High substrate resistivity: 20 Ohms x cm
• Dual Gate Oxide Thicknesses:
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- thin oxide 2.2 nm (1.6 V max)
- mid oxide 5.2 nm (3.6 V max)
Shallow Trench Isolation
Dielectric (ILD): Oxide / FSG
4 copper metal layers + 2 AlCu layers
Thick top metal AlCu layer (2.8 µm)
Technology Characteristics
• Supply voltage: 1.2 – 1.5V / 1.8 - 2.5 - 3.3 V
• Temperature range (Tj) : -40˚C / +125˚C
• Automotive Qualification
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Extended RF Devices Portfolio
Low Noise RF MOS
Low Power MOS
Spiral Inductors
High-ohmic poly resistor
MOS thinox and midox Varactors
MIM Capacitors
Poly/Diffusion Resistors
vPNP
LV, HV and ESD Diodes
OTP eFuses macro
PDK & Design Enablement
• PDK ATS-130-RF Cadence Virtuoso v6.1 OpenAccess
• Std. Cells Libs, Memory Compilers, 2.5 / 3.3V IO Libs
• IP catalog
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- transit frequency ft: 100 GHz
- Nfmin: < 1.65 dB @ 2.5 GHz
Gate density: 204 k/mm2
Low gate delay: 14ps NAND2, FO2, Nominal
Power (Typical): 20nW/MHz/gate
Embedded DP/SP-SRAM and ROM memory
compilers
• SRAM bitcells
- Single port: 2.28 µm²
- Dual port: 4.36 µm²
<< Contact us
ref: 130RF-May 2013 / contact: sales@altissemiconductor.com
• High performance and low power MOS devices
• Multi-Vt (regVt / highVt) thin oxide CMOS transistors
• RF-NMOS thinox transistor
130nm Technology - RF
RF-CMOS Transistors
Voltage
Type
WxL (µm)
Vt(V)
Ion
(µA/µm)
Ioff
(pA/µm)
High Vt
10x0.12
0.500
290
10
Regular Vt
10x0.12
0.370
415
50
High Vt
10x0.12
-0.430
-150
-10
Regular Vt
10x0.12
-0.310
-215
-120
nmos
Regular Vt
10x0.40
0.385
470
10
pmos
Regular Vt
10x0.40
-0.360
-270
-15
Device
nmos
1.2V / 1.5V
pmos
1.8 / 2.5V /
3.3V
High Quality RF Passive Devices
• Capacitors
- High Q precision MIM capacitor: 2.1 fF/µm², Q > 100 @ 2.4 GHz
- NCAP (thinox regular threshold voltage n-channel in Nwell): 11.0 fF/µm² @ 1.2V
- NCAP (midox n-channel in Nwell): 5.8 fF/µm² @ 2.5V
• Resistors
- P+ Poly resistor (salicide blocked): 325 ohms/sq
- N+ Diffusion resistor (salicide blocked): 82 ohms/sq
- Salicided N+ / P+ Poly resistor: 7 ohms/sq
- High Ohmic Poly resistor: 3000 ohms/sq
• BSIM4v43 macro model including interconnect modelling, gate protection diode and corners, process and
mismatch variations. Layout cells optimized for RF design.
- Thin oxide n-channel regular threshold voltage: Vdd Max: 1.6 V
- Thin oxide P-channel regular threshold voltage: Vdd Max: 1.6 V
- Midox n-channel analog IO: Vdd Max: 3.6 V
- Midox n-channel analog IO: Vdd Max: 3.6 V
• Varactors (Cmax / Cmin)
- regVt NFET (thinox) : 2.6
- regVt PFET (thinox) : 2.6
- analog NFET (midox) : 2
- analog PFET (midox) : 2
• Inductors
Information in this document is subject to change without notice. No representation or warranty is given by Altis with respect to the accuracy or
use of such information, or infringement of any intellectual property rights arising from such use or otherwise. In no case will Altis be liable for
damages arising directly or indirectly from any use of the information contained in this document.
Copyright 2013 Altis Semiconductor. All right reserved. All trademarks are the property of their respective owners.
ref: 130RF-May 2013 / contact: sales@altissemiconductor.com
- High-Q AlCu inductors with macromodels