130nm Technology - eFlash

130nm Technology - eFlash
A Robust, High Performance Embedded Flash Technology
This embedded Flash technology platform, strengthened by its EEPROM capabilities, brings dedicated solutions
for Automotive, Industrial and Security applications.
With more than 2 billion eFlash micro-controllers produced, Altis Semiconductor is a recognized leader in Embedded Flash
technologies.
CMOS Process Features
• Technology Node: 130 nm
• Minimum Gate Length: 120 nm (drawn)
• Triple Gate Oxide: 2.2 / 5.2 / 25 nm
• Dual poly / Triple Well
• Shallow Trench Isolation
• Dielectric (ILD): Oxide / FSG
• 4 to 6 copper metal layers + extra AlCu layer
Technology Characteristics
• Embedded Stacked Gate ONO Flash technology
• 1T High Density Flash cell with EEPROM emulation
capability
Low Static Power
Low Dynamic Power
Strong Noise Margin
High retention/endurance
- 5 years after 15 Kcycles
- 20 years after 1 Kcycles
• Highly robust design eFlash macro IP qualified up
to 150°C
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• Supply voltage: 1.5 V / 1.8 – 2.5 – 3.3- 5V
• Temperature range (Tj): -40˚C / +150˚C
• Automotive qualification
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Thin, Medium, Thick oxide Transistors
Multi-Vt (regVt / highVt) thin oxide CMOS transistors
Gate density: 204 k/mm²
Low gate delay: 14ps NAND2, FO2, Nominal
Embedded DP/SP-SRAM and ROM memory compilers
- Single port: 2.28 µm²
- Dual port: 4.36 µm²
PDK & Design Enablement
• PDK ATS-130-FL Cadence Virtuoso v6.1 OpenAccess
• Std. Cells Libs, Memory Compilers, 2.5 /3.3/5 V IO Libs
• IP catalog
<< Contact us
ref: 130FL-may 2013 / contact : sales@altissemiconductor.com
• SRAM bitcells
130nm Technology - eFlash
MOS Transistors
Voltage
Device
Type
High Vt
P
High Vt
NMOS
(Triple Well)
NMOS
Regular Vt
P
P
P
NMOS
(Triple well)
Regular Vt
P
PMOS
Regular Vt
P
PMOS
1.8 / 2.5V /
3.3V
Regular Vt
P
P
High Vt
NMOS
1.5V
Salicided Unsalicided
Regular Vt
Wmin
Lmin
(µm)
(10 x 10 µm)
0.16
0.12
0.430
0.16
0.12
0.230
0.16
0.12
0.430
0.16
0.12
-0.370
0.16
0.12
-0.215
0.50
0.40
0.440
0.50
0.40
0.458
0.50
0.40
-0.440
(µm)
P
P
P
P
P
P
VT (V)
Extended Analog capabilities
• Triple well & triple gate oxide
• Capacitors
- NCAP (thinox regular threshold voltage n-channel in Nwell): 11.0 fF/µm² @ 1.2V
- NCAP (midox n-channel in Nwell): 5.8 fF/µm² @ 2.5V
- Poly/ONO/poly capacitor: 2.1 fF/μm2 @ 2.5V
• Resistors
- P+ poly resistor (salicide blocked) : 325 ohms/sq
- N+ Diffusion resistor (salicide blocked) : 82 ohms/sq
- Salicided N+/ P+ Poly resistor: 7 ohms/sq
eFlash IP Macro
256KByte
128KByte
64KByte
32KByte
8KByte
WordWidth (bits)
128
128
128
128
128
# ECC bits (Hamming)
9
9
9
9
9
# words per page
8
8
8
8
8
# pages per sector
32
32
32
32
32
# sectors
64
32
16
8
2
BL Redundancy
YES
YES
YES
YES
YES
Block Redundancy
Optional
Optional
NO
NO
NO
EEPROM emulator
Optional
Optional
Optional
Optional
Optional
Release
Available
contact Altis Sales & Marketing
Information in this document is subject to change without notice. No representation or warranty is given by Altis with respect to the accuracy or
use of such information, or infringement of any intellectual property rights arising from such use or otherwise. In no case will Altis be liable for
damages arising directly or indirectly from any use of the information contained in this document.
Copyright 2013 Altis Semiconductor. All right reserved. All trademarks are the property of their respective owners.
ref: 130FL-May 2013 / contact : sales@altissemiconductor.com
Temperature range (Tj) -40°C/150°C -40°C/150°C -40°C/150°C -40°C/150°C -40°C/150°C