WUT ISE project (prof.R. Jachowicz group):

Transcription

WUT ISE project (prof.R. Jachowicz group):
Integrated MEMS detector for dynamic humidity measurement in medical applications
The device is composed of a capacitive interdigitated,
the thermoresistor and a heater. This construction
allows to reach up to 40 detections per second which is
some 100 to 1000 times faster than conventional dew
point hygrometers.
MNSDIAG/SMART FRAME conference on
„Micro- and nano- systems technology for modern industrial applications”
Warsaw 20-21, February 2013
IPiB project (prof. T. Pałko group)
BSC ISFET for blood capnometry sensor
Construction of an electrochemical sensor head for non- invasive measurements of
CO2 tension in arterial blood , where BSC ISFET is the main element of the sensor.
pCO2 sensor consist of:
 pH sensitive ISFET (BSC ISFET),
 reference electrode (Ag/AgCl),
 a resistive heater (32 ),
 thermistor (KTY83-122),
 electrolyte solution (sodium bicarbonate water solution
with HCO3-, concentration between 20 to 100 mmolls)
 hydrophobic membrane (teflon),
 sensor case (plastic)
Average
BSC ISFET
sensitivity:
49.3 mV/pH
Front side
Back side
5
WrUT project (prof.R.Gotszalk group):
Micromechanics-based biochemical analyzer
Optical Beam Deflection measurement setup
APC
MIRRORS
Avg
LASER
I/U
ADC
FFT
PHOTODETECTOR
MICROCANTILEVER
FIT
MAvg
 ITE – Who we are
 MNS-DIAG project – a joint effort of the
Polish MEMS/Sensor research community
 Process technology R&D for microsystem
fabrication
 New equipment.
Deep plasma etching of silicon:
The silicon elements are etched to a depth comparable to the thickness of the substrate
part
of
preconcentrator
channel
containing
blockers
for
sorbent
microgranules (manufactured for IBiB)
channel etched in the structure designed
for classification of bovine embryos
(manufactured for WEMiF PWr)
Examples of wafer bonding
process: (Si - Si bonding)
direct bonding
Silicon direct bonding technology can be
easily formed in low temperature, if the
wafer surfaces are highly flat and very
clean.
For structured MEMS devices, wafer bow
and local roughness may be not sufficient
to achieve a sufficient direct bond.
eutectic bonding
Examples of wafer bonding
process: anodic bonding (Si- glass bonding)
ALIGNER WAFER BONDER,
(AML AWB-04)
Available types
of bond processes:
anodic,
eutectic,
adhesive,
glass frit,
direct fusion bonding,
low temperature bonding,
triple stack bonding.
Fabrication process of
gas preconcentrators
Deep plasma etching of silicon:
SEM image of sidewall of the channel
etched in Si substrate using the Bosch
process reveals the scallops on the
sidewalls. The close-up view shows
the microroughness on the sidewalls.
Glass cover
and silicon
wafer
assembled by
anodic bonding
Gas inlets
fabricated in the
glass cover by laser
ablation process
Fabrication process of
gas preconcentrators
Polyimide tubings were filled with the grains of adsorbents forced in by the inlet pressure.
Examples of metal electroplating process
Platinum
Gold
Silver
Silver chloride
Three-electrode test structures for amperometric
measurements (manufactured for CSRG-WCh PW)
Fabrication of capacitive dew
point temperature detectors
WUT ISE project (prof.R. Jachowicz group)
Example of
detector
manufactured
for ISE PW
A. oxidation and Si3N4 deposition, B. deposition and photolithography
of Pt/Cr, C. deposition of Si3N4, D. deposition and photolithography of
Pt/Cr, E. deposition of Si3N4 and SiO2 layers, F. deposition and
photolithography of Pt/Cr, G. photolithography of contacts,
H.photolithography of bonding pads and Pt lift-off
Fabrication of capacitive dew
point temperature detectors
WUT ISE project (prof.R. Jachowicz group)
Sensor with three level Pt metallization
Sensor with two level Pt (or Au) metallization
Patterning and removing of
polymer layers
Silicone polymer post-etch residues visible on the
surface of Pt substrate: SEM graph showing the
surface of the Pt electrode after the polysiloxane
removal in SF6+O2 plasma and polymer post-etch
residues taken with an optical microscope
plasma etched silicone rubber
Polymer morphology after SF6
plasma exposure at 5mTorr pressure,
800W power, 100W bias power and
substrate holder temperature of 20ºC
or 40ºC
Al mask on
silicone layer
silicone etched
in SF6 plasma
(high density of
post-etch residues)
Al mask on
silicone layer
silicone etched
in SF6 plasma
R&D for technology improvement
Si pillars produced during
deep plasma etching due to
the micromasking effect
Deformation and breaking
of thin dielectric membrane
R&D for technology improvement
Polymer post-etch residues on Pt surface
plasma etching of polymers and
dielectrics from Pt surface: polyimide
(left) and silicon nitride with photoresist
mask (top right)
 ITE – Who we are
 MNS-DIAG project – a joint effort of the
Polish MEMS/Sensor research community
 Process technology R&D for microsystem
fabrication
 New equipment.
New equipment
Plasma bay
modernised in 2011
New equipment
Sentech SI 500 RIE cluster
Si3N4, SiO2, polySi and Al etching
2 x Oxford System 100 ICP
Si3N4, SiO2, polySi, polymers, Al,
noble metals etching
New equipment
Oxford System 80 Plus PECVD
SiNx and SiO2 deposition
New equipment
EVG 101 spray coater
PR deposition onto 3d surfaces,
edge masking
New equipment
Napson CRESBOX
Semi-automatic four point probe for
resistance/resistivity measurements.
Zygo NewView 7100
Optical white light profilometer for non – contact, three dimensional surface topography measurements as well as
for dynamic measurements of MEMS structures.
Dektak XT
Stylus profiler for surface topography contact
measurements.
New equipment
Equipment put into operation during the last month:
EVG 620TB double side mask aligner (including large gap alignment optics for 3d patterned surfaces)
2 x Plasma Parylene System Resist ashers (PR including SU8 removal)
Equipment being installed or tested:
Thermco diffusion furnace x 3
Si wet and dry oxidation, P diffusion, Al sintering, annealing processes
2 x Oxford Instruments magnetron sputtering system (Al and noble metals deposition)
IBS plasma immerse ion implanter (B, P, As, Si, C ion species; S/D doping, Trench doping, Backside wafer doping,
High dose poly-silicon doping, Contact doping, Shallow junction forming, 3D element doping, Nano precipitates and
nano structure forming, Hydrogenation, Gettering, Resist curing)
Thermco LPCVD reactor (polySi, Si3N4 deposition)
SUMMARY
Micro/nanoelectronic technology provides a
powerful tools to develop innovative
diagnostic devices and systems.
Polish research teams offers a competent
and reliable partnership in the micro/nanosensor research domain.
EUROSENSORS 2012, Kraków 24-27.06.2012
Thank you
for your attention
grabiec@ite.waw.pl
kdoman@ite.waw.pl

WUT ISE project (prof.R. Jachowicz group):

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