IVZ GMM-FB45 EMLC 2005

Content
Session 1
Plenary Session
Chair: Uwe Behringer, IMT, FZK, Germany
Enabling Technologies for Nanostructuring . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17
Hermann Gerlinger (Invited Welcome Speaker) President and CEO, Carl Zeiss SMT AG,
Oberkochen, Germany
Relevant Image Quality . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 21
Christopher J. Progler, (Invited Keynote Speaker), Chief Technology Officer, Photronics Inc.,
Allen, TX, USA
Session 2
Immersion Lithography
Chair: Jo Finders, ASML, The Netherlands
Immersion: Status and Impact on the Lithography Roadmap . . . . . . . . . . . . . . . . . . . . . . . . 25
Christian Wagner (Invited Speaker) Bob Streefkerk, ASML, The Netherlands
Exposure tool for immersion lithography . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 27
Soichi Owa (Invited Speaker), Hiroyuki Nagasaka, Yuuki Ishii, Kenichi Shiraishi, Shigeru Hirukawa,
Nikon Corporation, Miizugahara, Kumagaya, Saitama, Japan; Martin McCallum, Nikon Precision
Europe GmbH, Nikon Court, Kirkton Campus, Livingston, United Kingdom
Progress in 193nm immersion lithography at IMEC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 29
Kurt Ronse (Invited Speaker), Geert Vandenberghe, Peter Leunissen, IMEC, Leuven, Belgium,
Y. Aksenov, Philips research Leuven, Belgium
Session 3
Reticle Manufacturing I
Chair: Hermann Wolf, Photronics, Dresden, Germany
Influence of pellicle mounting to predicted mask flatness . . . . . . . . . . . . . . . . . . . . . . . . . . 37
Masamitsu Itoh, Soichi Inoue,Toshiba Corp., Japan, Komukai Toshiba-cho, Saiwai-ku, Kawasaki;
Tsuneyuki Hagiwara, Naoto Kondo, Nikon Corp., Japan
Endpoint detection development for 70 nm technology Cr etch process . . . . . . . . . . . . . . . 41
Pavel Nesladek, Andreas Wiswesser, Oliver Löffler, AMTC, Dresden, Germany
Application of PGSD (Proximity Gap Suction Development) to 70 nm NAND
Mask Fabrication (Abstract) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 43
Hideaki Sakurai, Tooru Shibata and Masamitsu Itoh,Toshiba Corp., 1 Komukai Toshiba-cho, Saiwai-ku,
Kawasaki-city, Japan; Kotaro Ooishi, Hideo Funakoshi, Yoshiki Okamoto, Shigemi Oono and Masatoshi
KanedaTokyo Electron Kyushu Ltd;, Naoya Hayashi,Dai Nippon Printing Co., Ltd., Japan
The complete manuscript is availabe on page 285
Alta®4700 system mask patterning performance improvements for X-Architecture
and wafer electrical performance interchangeability with 50kV E-beam . . . . . . . . . . . . . . . 45
Paul C. Allen, Mike Bohan, Eric R. Christenson, H. Dai, M.Duane, H. Christopher Hamaker,
Sam C. Howells, Boaz Kenan, Peter Pirogovsky, Malik K. Sadiq, Robin Teitzel, Michael White,
Etec Systems, Inc., Hillsboro, OR, USA
Session 4
Data Processing
Chair: Christian Kalus, Sigma-C, Munich, Germany
Enhanced Model Based OPC for 65nm and Below . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 49
James Word, Nicolas B. Cobb, Oliver Toublan (Invited Speaker), Mentor Graphics Corp. Wilsonville,
OR, USA
Extending OASIS for the unification of mask data representation . . . . . . . . . . . . . . . . . . . . 59
Emile Sahouria, Steffen Schulze, Mentor Graphics Corporation, Wilsonville, OR, USA; Toshio Suzuki,
Junji Hirumi, Semiconductor Leading Edge Technologies, Inc., 16-1 Onogawa, Tsukuba-shi, Ibarakiken,
Japan
The interaction of Mask manufacturability and Alt PSM design parameters . . . . . . . . . . . . 71
B. Kasprowicz, Photronics Allen, TX , USA, P. J. M. van Adrichem, Synopsys Inc., Mountain View,
CA, USA
Session 5
Technical Exhibition
Chair: Uwe Behringer, IMT, FZK, Germany
Session 6
Simulation
Chair: Wilhelm Maurer, Infineon Technologies AG, Munich, Germany
Mask Modeling in the Low k1 and Ultrahigh NA Regime: Phase and Polarization
Effects . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 77
Andreas Erdmann (Invited Speaker) Fraunhofer-Institute of Integrated Systems and Device Technology
IISB, Erlangen, Germany
Gaussian beam writing strategy: Accuracy of using the Shape Beam simulator Selid for
Gaussian Beam Systems . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 87
J. H. Tortai, LTM, CNRS, Grenoble, France; L. Mollard, LETI, CEA, Grenoble, France; Stephan Haefele,
Uli Hofmann, Sergey Vychub, Sigma-C, Munich, Germany
Accurate Aerial Image Simulation Using High-Resolution Reticle Inspection Images . . . . . . 89
William B. Howard, Chris A. Mack, KLA-Tencor, Process Analysis Division, Austin, TX, USA
TRAVIT: Software Tool to Simulate Dry Etch in Maskmaking . . . . . . . . . . . . . . . . . . . . . . . . . 91
S. Babin, K. Bay, S. Okulovsky, Abeam Technologies, Castro Valley, CA, USA
Session 7
Metrology I
Chair and Conference Program Chair: Jacques Waelpoel, ASML,The Netherlands
The Use of the CD-SEM for the measurement of sidewall angle of features
on photomasks . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 95
Tom Coleman, Applied Materials, Feldkirchen, Germany;Roman Liebe, Advanced Mask Technology
Center, Dresden, Germany; Liraz Gershtein, Roman Kris, Applied Materials Israel, Rehovot, Israel
Application results at 193nm: Lithography simulation by aerial imaging and
supplementary high resolution measurements (Abstract) . . . . . . . . . . . . . . . . . . . . . . . . . . . . 97
Axel M. Zibold, Klaus Böhm, Robert Brunner, Carl Zeiss SMS GmbH, Jena, Germany
The complete manuscript is availabe on page 291
Reticle grating measurements for 90nm and 70nm Scatterometry . . . . . . . . . . . . . . . . . . . 99
Maurice Janssen, ASM Lithography B. V, Veldhoven, The Netherlands
Results of a round robin measurement on a new CD mask standard . . . . . . . . . . . . . . . . . 109
F. Gans, R. Liebe, J. Richter, AMTC, Dresden, Germany; T. Schätz, Infineon Technologies AG, Munich,
Germany; B. Hauffe, Photronics MZD GmbH & Co. KG, Dresden, Germany; F. Hillmann, S. Döbereiner,
H.-J. Brück, G. Scheuring, MueTec GmbH, Munich, Germany; B. Brendel, L. Bettin, Leica Microsystems
Lithography GmbH, Jena, Germany; K.-D. Röth, W. Steinberg, G. Schlüter, Leica Microsystems Wetzlar
GmbH, Wetzlar, Germany; P. Speckbacher, W. Sedlmeier, Dr. Johannes Heidenhain GmbH, Traunreut,
Germany; T. Scherübl, Carl Zeiss SMS GmbH, Jena, Germany; W. Häßler-Grohne, C. G. Frase,
S. Czerkas, K. Dirscherl, B. Bodermann, W. Mirandé, H. Bosse, PTB, Braunschweig, Germany
Actual measurement data obtained on new 65nm generation mask metrology tool set . . 121
Jochen Bender, Michael Ferber, Klaus-Dieter Röth, Gerhard Schlüter, Walter Steinberg,
Leica Microsystems Semiconductor GmbH;Wetzlar, Germany; Gerd Scheuring, Frank Hillmann,
MueTec Automatisierte Mikroskopie und Messtechnik GmbH, Munich, Germany
Session 8
Reticle Manufacturing II
Chair: Gerd Unger, AMTC, Dresden, Germany
Application data of the electron-beam based photomask repair tool MeRiT MG . . . . . . . . 125
Christian Ehrlich, Carl-Zeiss SMS GmbH, Jena, Germany; Klaus Edinger, Volker Boegli, et al.;
NaWoTec GmbH, Rossdorf, Germany; Peter Kuschnerus, Carl-Zeiss NTS GmbH, Oberkochen, Germany
SiOx Deposition with Tunable Transmission and Phase-Shift Properties for the Repair
of Phase-Shifting Photomask Defects . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 129
Michael Moriarty, Jeffrey Marshman, Anthony Graupera, FEI Company, Peabody, MA, USA
Second Level Exposure for Advanced Phase Shift Mask Applications using the
SLM-based Sigma7300 DUV Mask Writer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 137
Thomas Öström, Angela Beyerl, Robert Eklund, Magnus Persson, Peter Högfeldt, Micronic Laser
Systems AB, Täby, Sweden
Session 9
Metrology II
Chair: Carola Blaesing-Bangert, LEICA, Wetzlar, Germany
Influence of Illumination Settings on Mask Metrology using AIMS . . . . . . . . . . . . . . . . . . . 141
M. Sczyrba, K. Bubke , A. C. Dürr, M. Ramstein, Advanced Mask Technology Center,
Dresden, Germany
DUV Water Immersion Technology Extends Linearity, First Results from the new
65nm Node CD Metrology System LWM500 WI . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 143
Frank Hillmann, Stefan Döbereiner, Christian Gittinger, Richard Reiter, Günther Falk,Hans-Jürgen Brück,
Gerd Scheuring, MueTec GmbH, Munich, Germany, Artur Bösser, Michael Heiden, Gerhard Hoppen,
Wolfgang Sulik, Wolfgang Vollrath, Leica Microsystems Semiconductor GmbH, Germany
Flare Metrology used for PSD Reconstruction . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 151
Michael Arnz, Carl Zeiss SMT AG, Oberkochen, Germany
Session 10 Maskless Lithography ML2
Chair: John Whittey, Leica, Oakdale, CA, USA
Demonstrators – a vital step forward for Projection Mask-Less Lithography (PML2) . . . . 163
Christoph Brandstätter, Ernst Haugeneder, IMS-Jena GmbH, Jena, Germany; Hans-Joachim Doering,
Thomas Elster, Joachim Heinitz, Olaf Fortagne, Leica Microsystems Lithography GmbH, Jena, Germany;
Stefan Eder-Kapl, Gertraud Lammer, Hans Loeschner, IMS Nanofabrication GmbH, Vienna, Austria;
Klaus Reimer, Fraunhofer Institut für Siliziumtechnologie (ISIT), Itzehoe, Germany; Juergen Saniter,
Maati Talmi, Fraunhofer-Institut für Nachrichtentechnik, Heinrich-Hertz-Institut, Berlin, Germany;
Ramona Eberhardt, Fraunhofer-Institut für Angewandte Optik und Feinmechanik, Jena, Germany;
Klaus Krönert, Equicon GmbH, Jena, Germany
Mask Manufacture for Projection Mask-Less
Lithography (PML2) - MEMS-Technology for a Programmable Aperture Platesystem . . . 165
K. Reimer, M. Witt, D. Kähler, J. Eicholz, L. Ratzmann, W. Brünger, Fraunhofer Institut für Siliziumtechnologie (ISIT), Dep. Microsystem-technology, Itzehoe, Germany; H-J. Döring, Leica Microsystems
Lithography GmbH, Jena, Germany; E. Haugeneder, IMS Jena GmbH, Jena, Germany; S. Eder-Kapl,
R. Nowak, IMS Nanofabrication GmbH, Vienna, Austria
Session 11 Poster Session
Chair: Uwe Behringer, IMT, FZK, Germany
High Resolution Holographic Lithography . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 169
V. V. Kerzhentsev, V.I. Rakhovsky and Yu. A. Tolmachev, NANOTECH Ltd., Moscow, Russia
Optimization of anti-reflective coatings for lithography application . . . . . . . . . . . . . . . . . . 177
J. Bauer, O. Fursenko, B. Kuck, Th. Grabolla, V. Melnik, W. Mehr, IHP, Frankfurt (Oder), Germany;
S. Virko, Institute of Semiconductor Physics (ISP) of National Academy of Sciences of Ukraine,
Kyiv, Ukraine
Defect Printability and Inspectability of Halftone Masks for the 90nm and 70nm Node . . 187
K. Eggers, K. Gutjahr, M. Peikert, D. Rutzinger, Infineon Technologies, Dresden, Germany;
A. Dürr, R. Ludwig, M Kaiser, J. Heumann, Advanced Mask Technology Center, Dresden, Germany
Pattern-induced non-uniformity of residual layers in nanoimprint lithography . . . . . . . . . . 193
Nicolas Bogdanski, Matthias Wissen, Hella-Christin Scheer, Faculty of Electrical, Information and
Media Engineering, University of Wuppertal, Germany
High productivity object-oriented defect detection algorithms for the new modular
die-to-database reticle inspection platform . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 201
Syarhei Avakaw, Planar State Scientific and Production Concern for Precision Machine Building,
Design Office for Precision Electronics Machine Building: Opto-Mechanical Equipment, Minsk,
Republic of Belarus
A Comprehensive Reticle Handling and Storage Approach for Optimized Fab Yields . . . . 211
Toshio Umeda, Valqua ACL Co. Ltd., Tokyo, Japan; Mamoru Hidaka and Hideaki Kawashima,
Hakuto Co. Ltd., Tokyo, Japan
Session 12 Application and Outlook
Chair: Michael Tissier, DuPont Photomask, Rousset Cedex, France
From Quartz to Silicon Chips . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 215
Marc Staples, (Invited Speaker) AMD, Dresden, Germany
Lithography Trends based on the Projection of the ITRS . . . . . . . . . . . . . . . . . . . . . . . . . . 217
Wolfgang Arden (Invited Speaker) Infineon Technologies AG, Munich, Germany
Session 13 EUV Mask and Lithography Techniques I
Chair: Konrad Knapp, Schott Lithotec, Jena, Germany
Overview of SEMATECH’s EUVL Program . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 227
Stefan Wurm (Invited Speaker), SEMATECH, EUV Lithography, Austin, TX, USA
Discussion of a simple EUV Reticle Model . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 243
Uwe Mickan, ASML Netherlands B.V., Veldhoven, The Netherlands; Martin Lowisch, Carl Zeiss SMT,
Oberkochen, Germany
Progress on EUV-Source development, tool integration and applications . . . . . . . . . . . . . 245
Rainer Lebert, Bernhard Jägle, Christian Wies, AIXUV GmbH, Aachen, Germany; Uwe Stamm,
Juergen Kleinschmidt, Guido Schriever, XTREME Technologies Germany¸Joseph Pankert Philips EUV
GmbH, Germany; Klaus Bergmann, Willi Neff, Fraunhofer Institut für Lasertechnik, Germany;
André Egbert, Phoenix EUV, Germany
Session 14 EUV Mask and Lithography Techniques II
Chair: Stefan Wurm, SEMATECH, Austin, TX, USA
Production Challenges of Making EUV Mask Blanks . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 259
Holger Seitz, Frank Sobel, Markus Renno, Thomas Leutbecher, Nathalie Olschewski, Thorsten
Reichardt, Ronny Walter, Hans Becker, Ute Buttgereit, Günter Heß, Konrad Knapp, Schott Lithotec, AG,
Meiningen, Germany; Christian Wies, Rainer Lebert, AIXUV GmbH, Aachen, Germany
High Speed Reflectometer for EUV Mask-Blanks . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 261
C. Wies, R. Lebert, B. Jägle, L. Juschkin, AIXUV GmbH, Aachen, Germany; F. Sobel, H. Seitz,
R. Walter, SCHOTT Lithotec AG, Meiningen, Germany; C. Laubis, F. Scholze, Physikalisch-Technische
Bundesanstalt, Berlin, Germany; W. Biel, IPP, Forschungszentrum Jülich GmbH, Jülich, Germany;
O. Steffens, S&F NC-Systemtechnik GbR, Herzogenrath, Germany
Efficient Simulation of Defect Free and Defective EUV Masks A Comparison Between
the Finite-Difference Time-Domain and the Waveguide Method . . . . . . . . . . . . . . . . . . . . . 271
Peter Evanschitzky, Andreas Erdmann, Fraunhofer Institute Integrated Systems and Device
Technology (FhG-IISB), Erlangen, Germany
High Speed Actinic EUV Mask Blank Inspection with Dark-Field Imaging . . . . . . . . . . . . . . 279
Tsuneo Terasawa, (Invited Speaker) Yoshihiro Tezuka, Masaaki Ito, MIRAI-ASET, Toshihisa Tomie,
MIRAI-ASRC, AIST, MIRAI-ASET Tsukuba, Onogawa, Tsukuba, Ibaraki, Japan
nachgereichte Beiträge
Application of PGSD (Proximity Gap Suction Development) to 70 nm NAND
Mask Fabrication . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 285
Hideaki Sakurai, Tooru Shibata and Masamitsu Itoh,Toshiba Corp., 1 Komukai Toshiba-cho, Saiwai-ku,
Kawasaki-city, Japan; Kotaro Ooishi, Hideo Funakoshi, Yoshiki Okamoto, Shigemi Oono and Masatoshi
KanedaTokyo Electron Kyushu Ltd;, Naoya Hayashi,Dai Nippon Printing Co., Ltd., Japan
Application results at 193nm: Lithography simulation by aerial imaging and
supplementary high resolution measurements . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 291
Axel M. Zibold, Klaus Böhm, Robert Brunner, Carl Zeiss SMS GmbH, Jena, Germany