Resent Development and Study of Silicon Photomultiplier
Transcription
Resent Development and Study of Silicon Photomultiplier
SiPM Resent Development and Applications New Developments in Photodetectors June 2005, Beaune Valeri Saveliev Obninsk State University, Russia Single Photon Detection Performance 21 June 2005 Valeri Saveliev, Beaune 2005, Beaune, France 2 MRS-APD, Si-PM, ... What is ? z z z z Good detection efficiency (~25% for green range of light) Single photon performance (Intrinsic Gain ~106), Proportional mode for the photon flux (large dynamic range), Operation conditions: z z z z z z Low Operational Voltage ~50-60 V, Room Temperature, Non Sensitive to Magnetic Field, Minimum Required Electronics, Miniature size and possibility to combine in matrix. Low cost ( in mass production conditions) 21 June 2005 Valeri Saveliev, Beaune 2005, Beaune, France 3 MRS-APD, Si-PM, ... What is ? z Silicon fine Micro Cells Structure on common substrate and with common output z Geiger Mode Operation of micro cells. z Integrated Quenching Mechanism 21 June 2005 Valeri Saveliev, Beaune 2005, Beaune, France 4 MRS-APD, Si-PM,... Where ? z CPTA, Moscow: MRS APD with Geiger Mode Operation z JINR, Dubna: Avalanche Micro Channel Photo Detector (new - Micro Cell APD close to SiPM) z Pulsar, Moscow: SiPM All of them based on the Metal-Resistor-Semiconductor (MRS) Structures Now, few of the Western Companies and Research Centers trying to get this technology ... 21 June 2005 Valeri Saveliev, Beaune 2005, Beaune, France 5 Structure of SiPM’s “n on p” z z Cross of CPTA SiPM (MRS) Cross of Pulsar SiPM (LCWS2004, M.Danilov ITEP,Moscow ) 21 June 2005 Valeri Saveliev, Beaune 2005, Beaune, France 6 Structure of SiPM’s “n on p” z Cross of JINR “SiPM” (NIMA 504, 2003, Z.Sadygov) 21 June 2005 Valeri Saveliev, Beaune 2005, Beaune, France 7 SiPM Layout CPTA SiPM z z z General view 1x1 mm, Common Electrode Layout, Microcells with Quenching Mechanism, 21 June 2005 Pulsar SiPM (LCWS2004, M.Danilov ITEP,Moscow ) Valeri Saveliev, Beaune 2005, Beaune, France 8 SiPM Performance Detection Efficiency – Product of few main contribution: Quantum Efficiency of Microcell For the light range 300-600 nm QE of Si at the level 0.8, and optical absorption coefficient gives the depletion thickness is in order few µm Geometrical Efficiency the technology topology gives the limitation of the sensitive area Probability of Geiger Mode probability that photoelectron will triggered an avalanche process The Depletion Area is ~5 µm: Low Resistive Si, Low Biase Voltage 21 June 2005 Valeri Saveliev, Beaune 2005, Beaune, France 9 SiPM Performance Detection Efficiency – Wavelength Dependent: QE of Hamamatsu Photonic APD Efficiency of Si-PM is limited by technology deadlayers on the top of structure Geometry Thickness of Dead Layer UV region of SiPM IR region of SiPM Thickness of Sensitive Layer is limited by the thickness of depleted layer of SiPM Absolute value scaling is limited by geometry factor The Si-PM has green light sensitivity and total Detection Efficiency for green range of light is ~25% 21 June 2005 Valeri Saveliev, Beaune 2005, Beaune, France 10 SiPM Performance Dark Count Rate – Main Limitation for the size of Sensitive Area of SiPM Dark Count Rate: Probability that a bulk thermal electrons will trigger an avalanche process (Voltage Dependent) - characterized by frequency, Dark Count Rate Amplitude: is amplitude of single photoelectron (Geiger Mode Signal) Typical value of Dark Rate is 0.6 MHz for 1 mm2 of Si-PM (~1500 cells), depleted layer 5 µm (CPTA) Dark Count Rate is significant limitation for the Single Photon Detection Mode, For the measurement of Photons Flux on the level more than ~ 4-5 photoelectrons this factor is negligible, because the amplitudes of Dark Rate Signal is equivalent of Single Photoelectron Signal 21 June 2005 Valeri Saveliev, Beaune 2005, Beaune, France 11 SiPM Performance Dark Count Rate Q1phe Q2phe Q3phe Dark Count Rate Frequency as function of the treshold at different Bias 21 June 2005 Correspondent Dark Current Curve as function of Bias Valeri Saveliev, Beaune 2005, Beaune, France 12 SiPM Performance Dynamic Range – is defined by discret structure of SiPM and correspond of Number of Cells ~1500 photoelectrons (CPTA) 21 June 2005 Valeri Saveliev, Beaune 2005, Beaune, France 13 SiPM Performance Resolution of Single Cell P Q LED Signal σ P = 0.84 ch σ σ Q = 1.34 ch = 7.8% A A = AQ − AP = 14 ch σ A ≈ 7.8% Q is One Single Cell Signal Single Microcell of SiPM –size 20x30 microns (SPAD with Integrated Quenchind Mechanizm) 21 June 2005 Valeri Saveliev, Beaune 2005, Beaune, France 14 SiPM Performance Intrinsic Resolution Q1phe P AN = N × A1 phe Q2phe σ N = N σ σ1 phe= 7.8% Q3phe A Q4phe Q5phe Q6phe 1 σ 1 phe N A1 phe Q is One Single Cell Signal Full Size SiPM – 1440 cells ( 20x30 microns) The Intrinsic Resolution of SiPM is very High (for 100 phe ~ few %) 21 June 2005 Valeri Saveliev, Beaune 2005, Beaune, France 15 SiPM Performance Time Responce Dark rate signal LED Signal z z z LED Signal Fast FE Electrnics ( Pisa University Development ) Practically no recharge tail for small LED signal Recharge Tail for the relatively large LED signal 21 June 2005 Valeri Saveliev, Beaune 2005, Beaune, France 16 SiPM in Strong Magnetic Field z Test of SiPM in Strong Magnetic Field up to 4 Tesla (Amplitude of SiPM signal in magnetic field with different orientations) (CALICE Meeting, DESY, 30.01.2004) 21 June 2005 Valeri Saveliev, Beaune 2005, Beaune, France 17 SiPM Optical Crosstalk During avalanche breakdown a cells emits a photons. These photons should not reach the other cells of the SiPM because this would result in the initiation of breakdown in those cells – Optical Crosstalk. 21 June 2005 Spectrum of Emited Photons during the Avalanche process in Si for a large current Valeri Saveliev, Beaune 2005, Beaune, France 18 SiPM Optical Crosstalk Pulsar SiPM, Optical Cross Tallk as a function of Gain (CALICE Meeting, DESY,7.12.2004) Without Special Technology, Optical Cross Tallk can be on the level 25-30 % at working point 21 June 2005 Valeri Saveliev, Beaune 2005, Beaune, France 19 SiPM Optical Crosstalk Cork University Study Result: In the prototypes, the trenches reduce the probability that a crosstalk event occurs during the detection of an incident photon from 50% to below 1%. Measurements of the cross talk probability versus the distance between the pixels show an excellent agreement with the model (Proc. SPIE,19-25.1.2002, J.Jackson) CPTA Technology included technology for preventing Optical Crosstalk 21 June 2005 Valeri Saveliev, Beaune 2005, Beaune, France 20 Main Efforts z Large Size of SiPM 2x2 mm2, 3x3 mm2,... 10x10 mm2 ??? Main Limitation is Dark Count Rate !!! Cooling z Combine the SiPM in Matrix 21 June 2005 Valeri Saveliev, Beaune 2005, Beaune, France 21 Main Efforts z UV Enhansment of SiPM (Light with ~400 nm wavelength) z Medical Application, z Cherenkov Radiation Detection,... JINR SiPM CPTA SiPM Spectrums of 22Na with LSO on the “p on n” SiPM 21 June 2005 Valeri Saveliev, Beaune 2005, Beaune, France 22 Applications z z z z z z DESY International LInear Collider Group, in particularly Hadron Calorimeter Activity – is leader in Application and testing of SiPM, few groups from US, Fermilab, SLAC started, Japan few groups started test of SiPM... Pisa University is good progress in Understanding of SiPM for Medical Application, MPI Regina University (Canada) in connection to the Jef Lab, Calorimeter Application Cosmic Research Activity, MPI, Russia, AMS experimet Cherenkov DEtectors (necessarz get good single photon detection performance) Exotic Applications, PSI, Liquid Xenon Calorimeter 21 June 2005 Valeri Saveliev, Beaune 2005, Beaune, France 23 Future z Combination of the Sensors and FE Electronics in the same technology Process. (IEEE STQE, v10, Jul-Aug, 2004,C.Niclass) 21 June 2005 Valeri Saveliev, Beaune 2005, Beaune, France 24