BT151(500R-650R

BT151(500R-650R-800R)G
SCRs
Simplified outline
TO-220AB
Description
Standard gate triggering SCR is fully isolated package suitable
for the application where requiring high bidirectional blocking
voltage capability and also suitable for over voltage protection,
motor control circuit in power tool, inrush current limit circuit and
heating control system.
12
3
Symbol
Features
• Blocking voltage to 800 V
a
k
• On-state RMS current to 12 A
g
• Ultra low gate trigger current
Description
Pin
Applications
1
cathode
2
anode
• Heating
3
gate
• Static switching
TAB
anode
• Motor control
• Industrial and domestic lighting
SYMBOL
PARAMETER
V DRM
Repetitive peak off-state voltages
V RRM
Voltages
IT
RMS
I TSM
Unit
500
650
800
V
12
A
100
A
500RG
650RG
800RG
RMS on-state current
Non-repetitive peak on-state current
SYMBOL
PARAMETER
Rth j-mb
Thermal resistance
Junction to mounting base
Rth j-a
Value
Thermal resistance
Junction to ambient
@ 2010 Copyright By American First Semiconductor
CONDITIONS
In free air
MIN
TYP
MAX
UNIT
-
-
1.3
K/W
-
60
-
K/W
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BT151(500R-650R-800R)G
Limiting values in accordance with the Maximum system(IEC 134)
SYMBOL
PARAMETER
V DRM
Repetitive peak off-state
V RRM
Voltages
I TAV
I T(RMS)
I TSM
Average on-state current Half sine wave;Tmb<=109
All conduction angles
RMS on-state current
half sine wave; Tj = 25
T=10ms
Non-repetitive peak
prior to surge
T=8.3ms
On-state current
2
CONDITIONS
MAX
UNIT
-
500
650
800
V
500RG
650RG
800RG
It
I 2t for fusing
T=10ms
DI T/dt
Repetitive rate of vise of
on-state current after
trigering
I TM=20A; I G=50mA;
D IG/dt=50mA/ s
I GM
V GM
P GM
P G(AV)
T stg
Peak gate current
Peak gate voltage
Peak gate power
Average gate power
Tj
MIN
-40
2
5
5
0.5
150
-
125 2
Over any 20 ms period
Storage temperature
Operating junction
Temperature
A
A
A
A
7.5
12
100
110
50
50
A 2S
A/ s
A
V
W
W
。
TJ =25 C unless otherwise stated
SYMBOL
PARAMETER
CONDITIONS
MIN
TYP MAX UNIT
Static characteristics
I GT
Gate trigger current
V D=12V; I T=0.1A
-
2
15
mA
IL
Latching current
V D=12V; I GT=0.1A
-
10
40
mA
IH
VT
Holding current
V D=12V; I GT=0.1A
I T=23A
V D=12V;I T=0.1A
V D=V DRM(max);I T=0.1A;T J=125
-
7
1.4
20
1.75
mA
0.25
0.6
0.4
1.5
-
V
V
-
0.1
0.5
mA
50
100
130
1000
-
V/ s
-
2
-
s
-
70
-
s
On-state voltage
V GT
Gate trigger voltage
ID
Off-state leakage current
V D=V DRM(max);V R=V RRM(max)T J=125
V
Dynamic Characteristics
D VD/dt
Critical rate of rise of
Off-state voltage
V DM=67% V DRM(max);Tj=125 ;
exponential wave form;
Gate open circuit R GK=100
t gt
Gate controlled turn-on
time
I TM=40A;V D=V DRM(max);
Dl G/dt=5A/ s
tg
Crcuit commutated tumoff time
V DM=67% V DRM(max);Tj=125 ;I TM=20A
V R=25V;dI TM/dt=30A/ S
I G=0.1A;
Dl G/dt=50V/ s;R GK=100
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BT151(500R-650R-800R)G
Description
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Page 3/5
BT151(500R-650R-800R)G
Description
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Page 4/5
BT151(500R-650R-800R)G
Package Mechanical Data
TO-220AB (Plastic)
DIMENSIONS
B
REF.
C
Millimeters
Inches
b2
Min.
L
F
I
A
l4
c2
a1
l3
l2
a2
b1
M
c1
e
A
a1
a2
B
b1
b2
C
c1
c2
e
F
I
I4
L
l2
l3
M
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Typ.
15.20
Max.
Min.
Typ.
15.90 0.598
3.75
Max.
0.625
0.147
13.00
14.00 0.511
0.551
10.00
10.40 0.393
0.409
0.61
0.88 0.024
0.034
1.23
1.32 0.048
0.051
4.40
4.60 0.173
0.181
0.49
0.70 0.019
0.027
2.40
2.72 0.094
0.107
2.40
2.70 0.094
0.106
6.20
6.60 0.244
0.259
3.75
3.85 0.147
0.151
15.80 16.40 16.80 0.622 0.646 0.661
2.65
2.95 0.104
0.116
1.14
1.70 0.044
0.066
1.14
1.70 0.044
0.066
2.60
0.102
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